Interface features of the HPHT Ib substrate and homoepitaxial CVD diamond layer

This is a detailed study of the interface features of the HPHT Ib substrate and the homoepitaxial CVD diamond layer. Homoepitaxial diamond layers were prepared by a commercial type 30 kW dc arc plasma Jet CVD on (100) substrates with gas mixture of Ar/H₂/CH₄. The internal stress and the fluorescence properties of the cross-section of the single crystal diamond bulk were characterized with polarizer optical microscopy, micro-Raman spectroscopy, and photoluminescence, as well as DiamondView luminescence imaging. A higher stress region in the homoepitaxial diamond layer near the substrate with width about 15 μm was found exhibiting higher nitrogen content and presented different fluorescence properties. Studies on the surface morphology of the initial growth diamond indicated that the transformation of the surface morphology from growth hillocks to macrosteps, may play a crucial role in the interface feature.     

High-rate ultrasonic polishing of polycrystalline diamond films

We report on fast polishing of polycrystalline CVD diamond films by ultrasonic machining in a slurry with diamond particles. The material removal mechanism is based on diamond micro-chipping by the bombarding diamond particles subjected to action of an ultrasonic radiator. The treated samples were characterized with optical profilometry, SEM, AFM and micro-Raman spectroscopy. The developed method demonstrates the polishing rate higher than those known for mechanical or thermo-mechanical polishing, particularly, the surface roughness of 0.5 mm thick film can be reduced in a static regime from initial value Ra ≈ 5 μm to Ra ≈ 0.5 μm for the processing time as short as 5 min. No appearance of amorphous carbon on the lapped surface was revealed, however, formation of defects in a sub-surface layer of a few microns thickness was deduced using Raman spectroscopy. The polishing of a moving workpiece confirmed the possibility to treat large-area diamond films.     

A near edge X-ray absorption fine structure study of oxidized single crystal and polycrystalline diamond surfaces

The influence of oxidizing environments on single crystal diamond and polycrystalline chemical vapor deposited CVD diamond films was studied using the near edge X-ray absorption fine structure (NEXAFS) pre-edge region in both bulk and surface sensitive modes. The NEXAFS of (100) oriented single crystal diamond was measured following (i) exposure to a microwave (MW) hydrogen plasma, (ii) annealing to 1000 °C, (iii) exposure of the as annealed surface to H₂O, and (iv) exposure of the as annealed surface to O₂. From these measurements particular surface bonding configurations have been assigned to features in the pre-edge structure. The NEXAFS of microcrystalline CVD diamond films was studied following different oxidative treatments using (i) a thermal atomic oxygen (AO) environment, (ii) a hyperthermal (5 eV) AO source, and (iii) an RF oxygen plasma exposure. The nature of the surface layer was found to be different for differently oxidized surfaces. These treatments were carried out as part of a study of CVD diamond durability in the low Earth orbit space environment.     

Investigation of nanocrystalline diamond films grown on silicon and glass at substrate temperature below 400 °C

We present investigation of nanocrystalline diamond films deposited in a wide temperature range. The nanocrystalline diamond films were grown on silicon and glass substrates from hydrogen based gas mixture (methane and hydrogen) by microwave plasma CVD process. Film composition, nano-grain size and surface morphology were investigated by Raman spectroscopy and scanning electron microscopy. All samples showed diamond characteristic line centred at 1332 cm^− 1 in the Raman spectrum. Nanocrystalline diamond layers revealed high surface flatness (under 10 nm) with crystal size below 60 nm. Surface morphology of grown films was well homogeneous over glass substrates due to used mechanical seeding procedure. Very thin films (40 nm) were successfully grown on glass slides (i.e. standard size 1 × 3″). An increase in delay time was observed when the substrate temperature was decreased. A possible origin for this behaviour was discussed.     

Hydrogen incorporation,bonding and stability in nanocrystalline diamond films

The hydrogen concentration in hot filament and microwave plasma CVD nanocrystalline diamond films is analysed by secondary ion mass spectrometry and compared to the film grain size. The surface and bulk film carbon bonds are analysed respectively by X-ray photoelectron spectroscopy (XPS) and ultra-violet Raman spectroscopy. XPS results show the presence of the hydrogenated p-type surface conductive layer. The respective intensities of the 1332 cm^− 1 diamond peak, of the G and D bands related to sp² phases, and of the 3000 cm^− 1 CH_x stretching mode band, are compared on Raman spectra. The samples are submitted to thermal annealing under ultra-high vacuum in order to get hydrogen out-diffusion. XPS analysis shows the surface desorption of hydrogen. Thermal annealing modifies the sp² phase structure as hydrogen out diffuses.     

Studies of heteroepitaxial growth of diamond

Large-scale heteroepitaxial growth of diamond depends critically on the development of a suitable lattice-matched substrate system. Oxide substrates, notably MgO and SrTiO₃, on which thin epitaxial films of iridium serve as a nucleation layer for diamond have already shown considerable promise. We describe here improvements in the growth of single crystal diamond by low-pressure microwave plasma-enhanced CVD. Oxide substrates with flat, low-index surfaces form the initial basis for the process. Iridium was deposited on heated substrates in a UHV electron-beam evaporation system resulting in epitaxial films, typically 150–300 nm thick, with Ir (1 0 0) parallel to the surface of all substrates as confirmed by X-ray and electron backscattering diffraction. Following Ir deposition, the samples were transferred to a CVD reactor where a bias-enhanced nucleation step induced a dense condensate that completely covered the Ir surface. Uniform nucleation densities of order 10¹² cm⁻² were observed. Interrupted growth studies, carried out at intervals from seconds to minutes subsequent to terminating the nucleation step, revealed a rapid coalescence of grains. One hour of growth resulted in a smooth, nearly featureless, (0 0 1) diamond film. For extended growth runs, slabs of diamond were grown with thickness as great as 38 μm and lateral dimensions near 4 mm. The crystals were transparent in visible light and cleaved on (1 1 1) planes along 〈1 1 0〉 directions, similar to natural diamond. Of particular significance is the successful use of sapphire as an underlying substrate. Its high crystalline perfection results in epitaxial Ir films with X-ray linewidths comparable to those grown on SrTiO₃. However, Al₂O₃ possesses superior interfacial stability at high temperatures in vacuum or in a hydrogen plasma with a better thermal expansivity match to diamond. Since sapphire is available as relatively inexpensive large diameter substrates, these results suggest that wafer-scale growth of heteroepitaxial diamond should be feasible in the near future.     

Investigation of heterostructure between diamond and iridium on sapphire

Diamond thin film has outstanding physical and chemical properties. Diamond-on-iridium configurations have been prepared by several methods, such as microwave enhanced plasma CVD, direct currency plasma CVD, and hot filament CVD. In this study, an Ir interlayer was deposited on single crystal sapphires (Al₂O₃) with A-planes {1120} by an RF magnetron sputtering method after annealing samples. In addition, a diamond thin film was deposited by a microwave enhanced plasma chemical vapor deposition (MPCVD) method using a mixture of hydrogen and methane gases after a bias enhanced nucleation (BEN) procedure.Ir (001) was grown on the A-plane of sapphire by X-ray pole figure measurement. Diamond thin films were synthesized on each Ir/sapphire substrate and characterized by SEM, Raman spectroscopy. D {100} faces were exhibited in substantial areas of diamond films, and a flat D {100} plane was partially obtained. It is considered that diamond thin films on Ir {100} were mainly grown towards the <100> direction and were epitaxially grown in part.     

Synthesis of diamond using ultra-nanocrystalline diamonds as seeding layer and their electron field emission properties

A modified nucleation and growth process was adopted so as to improve the electron field emission (EFE) properties of diamonds films. In this process, a thin layer of ultra-nanocrystalline diamonds (UNCD), instead of bias-enhanced-nuclei, were used as nucleation layer for growing diamond films in H₂-plasma. The morphology of the grains changes profoundly due to such a modified CVD process. The geometry of the grains transform from faceted to roundish and the surface of grains changes from clear to spotty. The Raman spectroscopies and SEM micrographs imply that such a modified diamond films consist of UNCD clusters (~ 10–20 nm in size) on top of sp³-bonded diamond grains (~ 100 nm in size). Increasing the total pressure in CVD chamber deteriorated the Raman structure and hence degraded the EFE properties of the films, whereas either increasing the methane content in the H₂-based plasma or prolonged the growth time improved markedly the Raman structure and thereafter enhanced the EFE properties of diamond films. The EFE properties for the modified diamond films can be turned on at E₀ = 11.1 V/μm, achieving EFE current density as large as (J_e) = 0.7 mA/cm² at 25 V/μm applied field.     

Experimental study of nucleation and quality of CVD diamond adopting two-step deposition approach using MPECVD

Effects of the deposition conditions on quality and nucleation density of CVD diamond were investigated using a microwave plasma enhanced chemical vapor deposition (MPECVD) method with methane-hydrogen gas mixtures. Diamond films were deposited at pressures of 665–4000 Pa, temperatures of 660–950 °C, and methane concentrations of 0.5–5 vol.%. Deposited diamond films were characterized by scanning electron microscopy, field emission scanning electron microscopy, micro-Raman spectroscopy, and X-ray diffraction. Diamond quality and nucleation density significantly affected by the deposition pressure, substrate temperature, and methane concentration. The findings of this work were discussed in terms of the effects of deposition conditions on the plasma composition. A two-step deposition approach was applied to improve nucleation density and quality of CVD diamond films. Polycrystalline diamond films were grown using the two-step deposition process changing a combination of parameters in the two steps. Growth and quality of the deposited diamond films were improved altering the deposition pressure and substrate temperature in the two steps.     

Adhesion at diamond-metal interfaces: a chemical composition perspective

Diamond films were chemically vapor deposited (CVD) on titanium, tungsten, molybdenum, copper and aluminum oxide substrates. In these studies, the interface formed between diamond and the substrate was exposed by mechanically deforming the metal substrate or diamond film to cause film delamination. The observed degree of adhesion for these interfaces can be ranked in the order: Ti » Al₂O₃ (thin films) > Cu > W » Mo. For highly adherent films, delamination procedures were carried out under controlled conditions in order to preserve the integrity of the interfacial species. The exposed interfaces were characterized by X-ray photoelectron spectroscopy (XPS), scanning Auger microscopy (SAM), scanning electron microscopy (SEM) and Raman microprobe spectroscopy. We find that substantial interfacial reaction layers exist at all interfaces except in the diamond-copper system and are composed of both oxides and carbides of the native substrate. Variations in the relative concentration of these species and the distribution throughout the reaction layer also were observed for the different substrates. We believe that both the chemical composition and morphology of the interface influence the adhesion properties of the diamond coating. Correlated investigations of the interfacial surfaces reveal that fracture of the diamond-metal interface occurs discretely at the diamond nucleation plane or within a reaction layer near the diamond interface. We discuss each of these findings in light of qualitative observations of adhesion and suggest avenues for improving the adhesion of diamond films.     

Porous diamond with high electrochemical performance

Synthetic diamond materials are currently attracting attention for applications such as thin films supercapacitors or medical implantable electrodes where chemically stable materials featuring high double layer capacitance as well as low electrochemical impedance are sought. Those properties may be reached with high aspect ratio diamond provided that current collection is done efficiently through the diamond layer. In this paper, we introduce a very novel material, namely SPDia™, based on boron-doped diamond grown on a highly porous polypyrrole scaffold prepared by chemical vapour deposition. This composite was first characterised by SEM and Raman spectroscopy to cheque the diamond crystallinity and the structural evolution of the polypyrrole during the CVD process. Then cyclic voltammetry and electrochemical impedance spectroscopy were performed to assess its electrochemical reactivity. It was found to exhibit remarkable properties, that include a large double layer capacitance with values reaching up to 3 mF cm⁻² in aqueous LiClO₄ and a low electrochemical impedance, thus highly competitive with respect to other nanostructured diamond materials as recently reported.     

Synthesis and characterization of freestanding diamond/carbon nanoflake hybrid films

Freestanding diamond/carbon nanoflake hybrid films have been synthesized by generating variable gas chemistries near a microstructured substrate in a conventional diamond deposition reactor. A multi-cathode direct current plasma enhanced CVD reactor, designed to deposit thick diamond wafers in its conventional configuration, has been used. The deposition conditions are identical to that for diamond films (10%CH₄ in H₂ gas, 100 Torr, 700–800 °C) except for a novel substrate. A sacrificial layer of silica micro-spheres (diameter 10–30 μm) was close-packed through gentle agitation of the spheres on a 100 mm diameter molybdenum disc. The growth of diamond and graphitic phases was observed on the front and back surfaces of the micro-spheres respectively. TEM observation confirmed that they were chemically bonded hybrid films without any distinguishable interlayer between the two phases.     

Influence of SiC particle addition on the nucleation density and adhesion strength of MPCVD diamond coatings on Si3N4 substrates

It is generally accepted that SiC layers are often involved in the adhesion efficiency of chemical vapour deposition (CVD) diamond films on Si-containing substrates. Si₃N₄–SiC composite substrates with different amounts of SiC particles (0–50 wt%) were then used for diamond deposition. Samples were produced by pressureless sintering (1750°C, N₂ atmosphere, 2–4 h). The diamond films were grown on a commercial MPCVD reactor using H₂/CH₄ mixtures. Despite there being no special substrate pre-treatment, the films were densely nucleated when SiC was added (N_d≈1×10¹⁰ cm⁻²) with primary nanosized (∼100 nm) particles, followed by a less dense (N_d≈1×10⁶ cm⁻²) secondary nucleation. Indentation experiments with a Brale tip of up to 588 N applied load corroborated the benefit of SiC inclusion for a strong adhesion. The low thermal expansion coefficient mismatch between Si₃N₄ and diamond resulted in very low compressive stresses in the film, as proved by micro-Raman spectroscopy.     

Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films

We deposited a [100]-oriented B-doped diamond layer by three methods to clarify the effects of film morphology on the transition from metallic to superconducting diamond. Heavily B-doped [100]-oriented diamond layers were deposited on [first method] undoped polycrystalline diamond films with [111] faces, [second method] highly oriented undoped diamond (HOD) thin films with a pyramidal surface, and [third method] thick undoped HOD films with a pyramidal surface. We confirmed that the B-doped layer in the third method was oriented in the [100] direction by scanning electron microscopy (SEM). The highest transition temperatures were T_c(onset) = 5.0 K and T_c(zero) = 3.1 K for the B-doped layer deposited on a thick HOD film with a pyramidal surface under a zero magnetic field. By contrast, T_c(onset) was 4.1 K for a heavily B-doped diamond layer deposited on a thin HOD film with a pyramidal surface, and was 3.9 K for a heavily B-doped diamond layer deposited on an undoped polycrystalline diamond film. These differences in T_c for our samples are affected by disorder and effective hole-carrier doping in each sample. Using the third method, we successfully deposited a high-quality B-doped [100] layer in three steps: (first step) depositing a [100] HOD film on a Si [100] substrate, (second step) depositing an HOD film with a pyramidal surface, and (third step) depositing a [100]-oriented B-doped layer. The change in the electronic states due to the B-doping of diamond films and the film morphology were investigated by x-ray photoelectron spectroscopy (XPS) measurements and band calculations.     

Hydrogen plasma etching of diamond films deposited on graphite

Poly- and nanocrystalline diamond films have been deposited using microwave plasma enhanced CVD with gas mixtures of x%CH₄/15%H₂/Ar (x = 0.5, 1, 3, and 5). After deposition the resulting films were exposed to a hydrogen plasma etching for 30 min. The hydrogen plasma produced preferential etching of non-diamond carbon on the surface of the samples and the development of steps and pits. Raman spectroscopy and X-ray photoelectron spectroscopy analyses on the etched films showed increased sp³/sp² ratio and decreased surface oxygen. The etch mechanism proposed is regression of pre-existing steps and step flow.     

Incorporation of hydrogen in diamond thin films

In this investigation, diamond thin films with grain size ranging from 50 nm to 1 µm deposited using hot filament chemical vapor deposition (HFCVD) have been analyzed by elastic recoil detection analysis (ERDA) for determining hydrogen concentration. Hydrogen concentration in diamond thin films increases with decreasing grain size. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) results showed that part of this hydrogen is bonded to carbon forming C–H bonding. Raman spectra also indicated the increase of non diamond phase with the decrease in crystallite size. Incorporation of hydrogen in the samples and increase of hydrogen content in nanocrystalline sample are discussed. Large separation between filament and substrate used for the synthesis of nanocrystalline film helped to understand the large incorporation of hydrogen in nanocrystalline diamond films during growth. The study addresses the hydrogen trapping in different samples and higher hydrogen concentration in nanocrystallites by considering the synthesis conditions, growth mechanisms for different grain sized diamond films and from the quality of CVD diamond films.     

785 nm Raman spectroscopy of CVD diamond films

Raman spectroscopy is a powerful technique often used to study CVD diamond films, however, very little work has been reported for the Raman study of CVD diamond films using near-infrared (785 nm) excitation. Here, we report that when using 785 nm excitation with 1 µm spot size, the Raman spectra from thin polycrystalline diamond films exhibit a multitude of peaks (over 30) ranging from 400–3000 cm^− 1. These features are too sharp to be photoluminescence, and are a function of film thickness. For films > 30 µm thick, freestanding films, and for films grown in diamond substrates the Raman peaks disappear. This suggests that the laser is probing the vibrations of molecular units at the grain boundaries of the disordered crystallites present at the interface between the diamond and substrate.     

Nucleation and growth of diamond films on single crystal and polycrystalline tungsten substrates

Silicon has been the most widely studied substrate for the nucleation and growth of CVD diamond films. However, other substrates are of interest, and in this paper, we present the results of a study of the biased nucleation and growth of diamond films on bulk single and polycrystalline tungsten. Diamond films were nucleated and grown, using a range of bias and reactor conditions, and characterized by Raman spectroscopy and scanning electron microscopy (SEM). High-quality (100) textured films (Raman FWHM<4 cm⁻¹) could be grown on both single and polycrystalline forms of the tungsten substrate. On carefully prepared substrates, by varying the bias treatment, it was possible to determine the nucleation density over a 4–5 order range, up to ∼10⁹ cm⁻². Raman measurements indicated that the diamond films grown on bulk tungsten exhibited considerable thermal stress (∼1.1 GPa), which, together with a thin carbide layer, resulted in film delamination on cooling. The results of the study show that nucleation and growth conditions can be used to control the grain size, nucleation density, morphology and quality of CVD diamond films grown on tungsten.     

Diamond CVD film formation onto WC–Co substrates using a thermally nitrided Cr diffusion-barrier

Diamond film deposition onto WC-Co substrates exhibits several limitations regarding the final diamond quality in the film and its adhesion due to the chemical interaction between the Co in the substrate and the diamond CVD environment. In the present study, the use of a ~ 1.5 μm thermally nitrided Cr interlayer was examined as an effective diffusion barrier throughout the CVD process. Nitridation of the Cr PVD layer in NH₃ environment resulted in the formation of a graded CrN/Cr₂N layer comprised mainly of the CrN phase, accompanied with the formation of a porous ‘net-like’ microstructure at the surface. During both thermal nitridation and exposure to the CVD environment up to 360 min, the diffusion of C and Co from the substrate into the interlayer was limited to the region adjacent to the Cr–N interlayer/WC–Co substrate interface, which contained the Cr₂N phase. In this region, the Co interacted with the Cr lattice to form a CoCr phase, which was suggested to enhance the chemical binding between the interlayer and the substrate. The region containing the CrN phase was suggested to act as an effective diffusion barrier due to its fully occupied interstitial sites and relatively high crystalline density compared to the underlying Cr₂N phase. It was evident that the deleterious effects of Co during the CVD process were successfully suppressed using the Cr–N interlayer and the deposited diamond film exhibited improved adhesion and higher diamond quality.The formation of phases within the interlayer during nitridation and the diamond CVD process, and diamond quality evaluation in the deposited films were investigated by complementary techniques: SEM, XRD, XPS, SIMS and Raman spectroscopy.     

The role of nitrogen in the deposition of polycrystalline diamond films

The role of nitrogen in the formation of polycrystalline diamond films prepared using a microwave plasma CVD system has been studied using micro-Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy (XPS). Although the nitrogen concentration in the films was too low to be detected by XPS, the Raman spectrum was found to be significantly affected by the nitrogen flow ratio. The intensity of the Raman peak at 1480 cm⁻¹ significantly decreases, whereas that of 1190 cm⁻¹ peak remains almost unchanged in comparison with the 1350 and 1550 cm⁻¹ peaks with increasing nitrogen flow ratio. In contrast, the preferentially (111)-orientated growth and the growth rate were little influenced by the nitrogen flow ratio. These results indicate that nitrogen plays a special role in the formation and structure of the polycrystalline diamond films studied in this report.