Far infrared spectrum of CD3OH methanol from 40–220 CM−1

The Fourier transform far-infrared (FTFIR) spectrum of CD₃OH has been obtained from 40–220 cm^?1 at a resolution of 0.002 cm^?1, and partially analyzed. Numerousb-type branches have been assigned in the spectrum, ranging over torsional states fromn=0 to 3. The branches have been fitted toJ(J+1) power-series energy expansions in order to obtainJ-independent branch origins. These in turn have been fitted to the torsion-rotation Hamiltonian, and improved molecular constants have been obtained for the ground vibrational state.     

High-resolution far-infrared spectroscopy of C-13 methanol

The high-resolution far-infrared (FIR) Fourier transform spectrum of¹³CH₃OH has been studied from 25–350 cm^?1, andb-type^rR-branches in the torsional ground state have been assigned. The branches have been fitted to phenomeno-logical expansion parameters, which reproduce the branch frequencies generally to well within ±0.001 cm^?1. An interesting and relatively novel ΔK=4 perturbation, localized to levels around J=18, has been observed between (nτK)=(019) and (125) states.     

Fourier Transform Spectrum and Term Values for the CO-Stretching Mode of CD3OH Methanol

The Fourier transform infrared (FTIR) spectrum of the CO-stretching fundamental band of CD₃OH has been recorded at a resolution of 0.002 cm^-1. Assignments are reported for 35 subbands in the n = 0 ground torsional state, covering K = 0 to 9 for all torsional symmetries plus K = 10 A, and 12 assorted A and E subbands in the n = 1 first excited torsional state ranging from K = 0 up to K = 5. The subband wavenumbers have been fitted to J(J + 1) power-series energy expansions to obtain subband origins and a compact representation of the spectral observations. With the use of known ground-state energies, CO-stretch energy term values have been determined and tabulated. Least-squares fitting of the subband origins to a fourth-order Hamiltonian model for the CO-stretch mode is discussed.     

Torsion-rotation far-infrared spectrum of O-18 methanol

High-resolution Fourier transform spectra have been recorded from 15–470 cm^?1 for the far-infrared trosion-rotation band of O-18 methanol in the vibrational ground state. So far, 57 subbands have been assigned in the 15–220 cm^?1 region for a wide range of rotational and torsional states, and their J-independent origins have been determined to an estimated accuracy of ±0.01 cm^?1. The observed origins were found to deviate in many cases by several tenths of a cm^?1 from the values calculated with the previous molecular parameters. Together with 4 known microwave origins, the new data have been fitted to a model torsion-rotation Hamiltonian in order to refine the set ofb-type molecular constants for the ground state. With the new parameter set, the experimental subband origins are reproduced with an rms error of ±0.02 cm^?1, representing a substantial improvement over the earlier situation. The spectroscopic results have also been of great assistance with our assignments of optically-pumped FIR laser emission in CH₃ ¹⁸OH, in providing FIR data for checking the identification of the IR-pump/FIR-laser transition systems through combination loop relations.     

Far infrared emission spectra from stratospheric hydrogen peroxide

Synthetic emission spectra from two stratospheric altitude observations have been analyzed for the presence of H₂O₂ in the far infrared region. The calculations are made with a high spectral resolution (10^?3 cm^?1 or 10^?4 cm^?1) greater than those in experimental measurements which are in the region of 3.10^?3 cm^?1. Spectra cover a spectral interval between 40 and 120 cm^?1 showing the best features of H₂O₂ susceptible to observation in a stratospheric spectrum. The optimum conditions for identification have been considered. Using the variations in H₂O₂ abundance in the measurement data and photochemical models, the H₂O₂ features detection limits have been studied.     

Tuning characteristics of a uv preionized 20-atmospheres CO2 laser

The tuning characteristics of a uv preionized 20-atmospheres gas discharge CO₂ laser with a novel and simple preionization scheme have been investigated. Continuous tunability in all branches of the 9.4 μm and 10.4 μm band with a total tuning range of more than 60 cm^?1 without frequency pulling is demonstrated. Additionally, a study of the laser pulse behaviour was performed.     

Analysis of the high resolution spectrum of the fundamental bandsv 2 andv 5 of12CH3F and their interactions

Thev ₂(A₁) andv ⁵(E) fundamental vibration-rotation bands of¹²CH₃F have been recorded under high resolution (0.015 to 0.020 cm^?1) in the spectral range of 1460 cm^?1. About 1100 transitions have been assigned. The Coriolis interaction between v₂=1 and v₅=1, and the l(2,-1) interaction in v₅=1 have been rigorously treated. Sixteen molecular constants have been determined from a least squares analysis. They reproduce the observed data with an overall standard deviation of 0.0037 cm^?1.     

Methanol laser lines from torsionally excited co stretch states,and from OH-bend,CH3-rock,and CH3-deformation states

Using a quasi-CW CO₂ oscillator-amplifier combination with peak power 300 Watt, we have generated FIR laser emission in weak absorption bands of CH₃OH. 40 new lines are reported, and their wavelengths are measured with a relative accuracy of 5×10^?5. A total of 72 lines are assigned. 34 of these involve torsional n=1, 2, and 3 states of the CO stretch and the vibrational ground state. The remaining lines are associated with the CH₃-rock, OH-bend, and CH₃-deformation modes. The latter are located 1460 cm^?1 above the ground state, and are pumped by simultaneous vibrational excitation and torsional deexcitation.     

Submillimeter wave photoconductivity observation of shallow donors in In0.53Ga0.47As

The hydrogen like 1s → 2p (m=?1,0,+1) transitions of two donors have been observed in high intensity magnetic fields up to 8.5T. The m=?1 transitions ocurred between 2 cm^?1 and 25 cm^?1. The signature curves for donors in ternary semiconductor In_0.53Ga_0.47As have now been established.     

Far-infrared spectrum of excited torsional states of C-13 methanol

The torsion-rotation structure of the far-infrared (FIR) spectrum of the C-13 isotopic species of methyl alcohol has been investigated by high-resolution Fourier transform spectroscopy in the 25–350 cm^?1 region, with emphasis on subbands involving excited torsional states. In this study, 89 such subbands have been identified, with torsional states fromn=1 ton=3 included. As well, a further 4 assignments have been added to our previous work on then=0 ground torsional state. The subband origins together with known microwave results have been fitted by least-squares to our torsion-rotation Hamiltonian, and improved molecular structural and torsional constants for the vibrational ground state are reported. Tables of state-specific constants representing the three leading terms in aJ(J+1) power-series expansion of the torsion-rotation energy levels are given for torsional statesn=0 to 3 and rotationalK values from 0 to 16.     

Electrical,optical and photoelectrochemical properties of natural enargite,Cu3AsS4

The semiconducting properties of natural samples of enargite, a copper and arsenic suphide (Cu₃AsS₄), have been studied. They have been found to be p-type semiconductors with a resistivity of about 7 Ω cm, a doping level of about 10¹⁷ cm^?3 and a mobility of 9 cm²V^?1 s^?1. The variation of the resistivity as a function of temperature allows to determine an activation energy of 0.11 eV. Two optical transitions have been determined, an indirect one at 1.19 eV and a direct one at 1.44 eV. The samples, mounted as working electrodes in a photoelectrochemical set-up, are photosensitive and behave as p-type photocathodes. The two transitions are found again from the analysis of photocurrent spectra. The direct band gap value is close to the ideal value required for photovoltaic applications. However the quantum efficiencies obtained here are still low.     

Oxygen‐Deficient Bismuth Oxide/Graphene of Ultrahigh Capacitance as Advanced Flexible Anode for Asymmetric Supercapacitors

Oxygen‐deficient bismuth oxide (r‐Bi₂O₃)/graphene (GN) is designed, fabricated, and demonstrated via a facile solvothermal and subsequent solution reduction method. The ultrafine network bacterial cellulose (BC) as substrate for r‐Bi₂O₃/GN exhibits high flexibility, remarkable tensile strength (55.1 MPa), and large mass loading of 9.8 mg cm^?2. The flexible r‐Bi₂O₃/GN/BC anode delivers appreciable areal capacitance (6675 mF cm^?2 at 1 mA cm^?2) coupled with good rate capability (3750 mF cm^?2 at 50 mA cm^?2). In addition, oxygen vacancies have great influence on the capacitive performance of Bi₂O₃, delivering significantly improved capacitive values than the untreated Bi₂O₃ flexible electrode, and ultrahigh gravimetric capacitance of 1137 F g^?1 (based on the mass of r‐Bi₂O₃) can be obtained, achieving 83% of the theoretical value (1370 F g^?1). Flexible asymmetric supercapacitor is fabricated with r‐Bi₂O₃/GN/BC and Co₃O₄/GN/BC paper as the negative and positive electrodes, respectively. The operation voltage is expanded to 1.6 V, revealing a maximum areal energy density of 0.449 mWh cm^?2 (7.74 mWh cm^?3) and an areal power density of 40 mW cm^?2 (690 mW cm^?3). Therefore, this flexible anode with excellent electrochemical performance and high mechanical properties shows great potential in the field of flexible energy storage devices.     

Assignments of optically pumped CD3OH laser lines

Six FIR laser lines from CD₃OH pumped by the 10R(36) and the 10R(18) CO₂ laser lines are assigned to specific rotational energy levels in the excited C?0 stretch state. It is found that their upper laser levels are shifted by a Fermi resonance between the C?0 stretch vibration and the third and forth harmonics of the torsional mode. The Fermi resonance shifts are +0.332 cm^?1 and +2.251 cm^?1 for the upper laser levels pumped by the 10R(36) and the 10R(18) CO₂ laser lines, respectively. Calculated frequencies of the pump and the laser transitions agree with those of the pump CO₂ laser lines and the observed FIR laser lines within estimated accuracy.     

Low-Temperature Midinfrared Absorption in GaSe

We report the measurement of the temperature dependence of the absorption spectra of ε- GaSe over the temperature range 300 K to 5 K. Measurements have been made for both the e-ray (polarized parallel to the crystal’s c-axis) and the o-ray (polarized perpendicular to the c-axis), over the spectral range 4000 to 10 cm^?1. Nine absorption lines at 417, 440, 499, 546, 891, 945, 1015, 1093, 1270 cm^?1 were recorded at 300 K for the e- ray spectra. Some of these lines were identified using the results of a modified single layer, linear chain model of GaSe. The lines at 417, 440 and 499 cm^?1 were assigned to local impurity absorption originating from N, Mg and O, respectively. The weak lines at 945, 1015 and 1093 cm^?1 were assigned to hole transitions from the acceptor levels to the top of the valence band. Two absorption lines at 891 cm^?1 and 1270 cm^?1 were assigned to hole transitions from the quasi-local acceptor levels to the double degenerate valence sub-bands Γ₅ or Γ₆. The origin of lines recorded in the far IR absorption spectra at 20, 37 cm^?1 and 362 cm^?1 were also identified.     

Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN

Electrical and optical activation studies of lower dose Si-implanted Al_xGa_1?xN (x=0.14 and 0.24) have been made systematically as a function of ion dose and anneal temperature. Silicon ions were implanted at 200 keV with doses ranging from 1×10¹³ cm^?2 to 1×10¹⁴ cm^?2 at room temperature. The samples were proximity cap annealed from 1,100°C to 1,350°C with a 500-Å-thick AlN cap in a nitrogen environment. Nearly 100% electrical activation efficiency was obtained for Al_0.24Ga_0.76N implanted with a dose of 1 × 10¹⁴ cm^?2 after annealing at an optimum temperature around 1,300°C, whereas for lower dose (≤5×10¹³ cm^?2) implanted Al_0.24Ga_0.76N samples, the electrical activation efficiencies continue to increase with anneal temperature up through 1,350°C. Seventy-six percent electrical activation efficiency was obtained for Al_0.14Ga_0.86N implanted with a dose of 1 × 10¹⁴ cm^?2 at an optimum anneal temperature of around 1,250°C. The highest mobilities obtained were 89 cm²/Vs and 76 cm²/Vs for the Al_0.14Ga_0.86N and Al_0.24Ga_0.76N, respectively. Consistent with the electrical results, the photoluminescence (PL) intensity of the donor-bound exciton peak increases as the anneal temperature increases from 1,100°C to 1,250°C, indicating an increased implantation damage recovery with anneal temperature.     

Fourier transform spectrum ofν 5andν 8 bands of propyne

Theν ₅ andν ₈ bands of propyne have been reinvestigated using a FTS spectrum between 900 and 1000 cm^?1 with a resolution of 0.005 cm^?1. About 1500 lines have been assigned. Some perturbations are clearly evident. Molecular parameters ofν ₅=1 andν ₈=1 levels were determined.     

Evaluation of mobility gaps and density of localized hole states in p-Ge/Ge1−x Six heterostructures in the quantum Hall effect mode

The temperature (0.1 K?T?20 K) and magnetic field (0 T?B?12 T) dependences of the longitudinal (ρ_xx) and Hall (ρ_xy) resistivities have been studied in detail for p-Ge/Ge_1?x Si_x (x=0.07) multilayer heterostructures with hole density p=(2.4–2.6)×10¹¹ cm^?2 and mobility μ=(1.1–1.7)×10⁴ cm² V^?1 s^?1. The energy spectrum parameters of two-dimensional (2D) hole gas in the quantum Hall effect mode have been determined. The mobility gap W=(2–2.5) meV and the background density of localized states g _c =(5–7)×10¹⁰ cm^?2 meV^?1 for the filling factors ν=1 and 2. The results are discussed in terms of long-range impurity potential models for selectively doped 2D systems.     

A Far IR Study of NbN in the Normal and Superconductive State

A thin film of NbN (thickness t = 300 Å), has been deposited on an MgO and a Si wafer. Both samples have been studied by transmission from 10 or 20 to 120 cm^?1, and have exhibited one maximum of transmission at a given frequency like the classical superconductors as Pb, Sn or Hg in the superconductive state. From the Far IR experimental data, the characteristic temperature θ_c, and the gap frequency (ν_gap (θ) = 2 Δ (θ), Δ(θ) being the energy gap) are immediately obtained (for instance for the NbN / MgO sample, θ_c = 15.5 K; ν_g (5 K) = 39.7 cm^?1), and it is seen that $\frac{{{\text{2}}\vartriangle (4{\text{K)}}}}{{{\text{k}}_{\text{B}} \theta _c }} \approx 3.5$ as expected from the BCS theory for a weak coupling. To fit the data we had to adjust only two additionnal parameters: collision and plasma frequency, ν_c (θ) and ν_p (including all carriers). At θ = 5 K, thebest fit for the NbN / MgO sample is obtained with ν_c = 371 cm^?1 and ν_p = 12,600cm^?1.     

Electrical properties of ultrathin oxide grown by high pressure oxidation and N2O nitridation for ULSI device applications

For the first time, the feasibility of ultrathin oxides grown by high pressure oxidation (HIPOX) technology in O₂ ambient and nitrided in N₂O ambient with rapid thermal processing has been investigated in order for them to be used as a gate oxide of ULSI devices. The dielectric breakdown electric field (E _BR) and the midgap interface trap density (D _itm) of the nitrided-HIPOX oxide are ?13:9MVcm^?1 and 2 × 10¹⁰cm^?2eV^?1 respectively which are almost the same as those of the control oxide and the nitrided-control oxide. The time-tobreakdown (t_BD) of the nitrided-HIPOX oxide is longer than that of the control oxide at low electric field (<10^?4 A cm^?2) owing to the combination of nitrogen and defects near the Si?SiO₂ interface during nitridation. The lifetimes of the nitrided-HIPOX oxides increase initially, reaching a maximum value of 1:2 × 10⁹ s at a stress current density of 1 × 10^?6 A cm^?2,corresponding to over 10 years, and then decrease as nitridation proceeds.