共查询到18条相似文献,搜索用时 93 毫秒
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高速电路板级信号完整性设计 总被引:2,自引:0,他引:2
随着系统工作频率及信号边沿转换速率提高,在实际PCB设计中要求设计者能熟练运用设计规则并针对不同设计要求相应调整。文中结合高速电路中常见SI设计技术与实际PCB设计实例,分析了常见SI设计规则工作原理,为应对日益复杂的高速PCB设计提供参考。 相似文献
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文章介绍了基于信号完整性(SI)、电源完整性(PI)与电磁兼容性(EMI)的高速PCB的设计方法,并利用Cadence软件针对高速PCB设计中的信号完整性、电源完整性及电磁兼容性中的基本问题进行仿真与分析。 相似文献
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高速电路中的信号完整性分析 总被引:1,自引:0,他引:1
随着嵌入式系统速度的提高,信号完整性(Signal Integrity,SI)问题受到越来越多的关注。由于信号质量不理想而造成系统崩溃的现象经常出现。结合系统设计中的实例,对高速信号传输的信号完整性问题作了较为详细的论述。在电路设计初期,通过PROTEL软件对和信号完整性进行分析,仿真结果指导PCB板的设计,可以有效地提高信号的完整性,极大地缩短设计周期,降低设计成本。 相似文献
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高速电路设计中的信号完整性分析 总被引:1,自引:0,他引:1
介绍了高速电路设计中的信号完整性概念以及破坏信号完整性的原因。从理论和计算的层面上分析了高速电路设计中传输线原理和反射形成的原因,同时给出了其解决方法。 相似文献
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针对高速电路信号完整性,在介绍信号完整性基本概念的基础上,重点研究了信号反射问题.分析了反射形成的原因和解决方法,阐述了信号完整性仿真分析的相关内容,最后结合实际的应用说明了利用Mentor Graphics公司的HyperLynx仿真工具解决信号反射的方法. 相似文献
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《Electron Devices, IEEE Transactions on》1985,32(3):677-681
A design and experimental verification of a new high-speed sense circuit for Josephson memory are reported. This sense circuit consists of latching logic circuits with resistive loads and is able to adoptX-Y nonsequential access. It is necessary to decrease base-electrode capacitance of sense gates or to insert dummy inductors in the counter electrodes for the gate in order to realize high-speed memory circuit through word-line impedance matching. In 4-kbit RAM's, it was clarified that the gathering circuit which is composed of two-stage OR gates, each of which is composed of an 8-input wired RCL-OR gate, can minimize the gathering delay time. An experimental sense circuit was fabricated using a 5-µm Pb-alloy process, and the read-out time was measured to be about 400 ps using an on-chip sampling circuit. 相似文献
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RF MEMS switch integrated on printed circuit board with metallic membrane first sequence and transferring 总被引:1,自引:0,他引:1
Zhang Q.X. Yu A.B. Guo L.H. Kumar R. Teoh K.W. Liu A.Q. Lo G.Q. Kwong D.-L. 《Electron Device Letters, IEEE》2006,27(7):552-554
This letter reports, for the first time, on RF MEMS switches integrated on flexible printed circuit boards (i.e., FR-4) using transfer technology. The devices were first processed on Si-substrate using a modified MEMS sequence and subsequently transferred onto an FR-4 substrate by thermal compressive bonding, mechanical grinding, and wet removal of silicon. The switches were demonstrated with flat metal membrane (top electrode), precisely controlled gap between the membrane and bottom electrode, low insertion loss (/spl les/ 0.15 dB at 20 GHz), and high isolation (/spl sim/ 21 dB at 20 GHz). This technology shows the potential to monolithically integrate RF MEMS components with other RF devices on organic substrate for RF system implementation. 相似文献
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Dou Lei Wang Zhiquan 《电子科学学刊(英文版)》2006,23(3):467-470
A new method for analyzing high-speed circuit systems is presented. The method adds transmission line end currents to the circuit variables of the classical modified nodal approach. Then the matrix equation describing high-speed circuit system can be formulated directly and analyzed conveniently for its normative form. A time-domain analysis method for transmission lines is also introduced. The two methods are combined together to efficiently analyze high-speed circuit systems having general transmission lines. Numerical experiment is presented and the results are compared with that calculated by Hspice. 相似文献