基于CPCI总线的智能A／D，D／A模块设计

A/D和D/A接口在工业控制应用中普遍存在,这就促使了基于各种接口的A/D,D/A模块的诞生.基于CPCI总线的A/D,D/A模块通过CPCI总线与主机通信,通过A/D接口采集电压信号,经过伺服控制软件处理.输出模拟量驱动执行机构.该模块使用DSP芯片对数据进行实时处理,通过CPCI总线进行快速的数据传输.在实际应用中得到了可靠性、实时性等方面验证.     

基于CPCI的1553B总线通信模块的设计与实现

提出一种基于CPCI总线的1553B通信功能模块的硬件设计实现方法,其中控制逻辑在FPGA中编程实现。首先介绍CPCI总线、1553B总线。接着描述硬件系统设计实现方法及本设计中所采用的CPCI协议接口芯片PCI9030,1553B协议接口芯片BU-61580等芯片的接口信号及控制寄存器。最后,给出PCI9030,XC3S400和BU-61580接口芯片实现接口的硬件原理图。     

光纤声光调制器的高频驱动器

光纤声光调制器驱动器作为光纤激光器的重要组成部分,其性能参数对激光品质具有重要影响。该文设计了高频、高功率驱动器方案。该方案通过20²00kHz脉冲信号控制模拟开关实现脉冲信号和150 MHz载波信号的二进制幅度键控(2ASK)调制,调制信号经功率放大器放大,进行阻抗匹配后输出到声光调制器,驱动声光调制器工作。驱动信号的频率为20200kHz脉冲信号控制模拟开关实现脉冲信号和150 MHz载波信号的二进制幅度键控(2ASK)调制,调制信号经功率放大器放大,进行阻抗匹配后输出到声光调制器,驱动声光调制器工作。驱动信号的频率为20²00kHz,功率为3 W。     

基于脉宽控制器TL494的升压开关电源设计

本设计是利用TL494芯片8脚和11脚输出脉冲信号送至由TIP32组成的半桥式变换器电路中控制电流的通断,由高频变压器升压得到升高的高频脉冲电压,经整流滤波产生直流电压输出。取样电路从电源输出端获取输出端变化的电压信号送至芯片TL494的1脚,由该电压的大小来控制芯片输出的高频脉冲宽度,从而决定三极管TIP32C导通时间,达到自动控制输出功率实现28.7V稳定的直流电压输出。该电源电能转换效率高,输出电压稳定,有一定的实用价值。     

基于齿轮测量中心数值随动系统的设计

为了实现齿轮测量中心对未知轮廓齿轮测量的需求,设计了基于齿轮测量中心的数值随动系统,使用测头数值信号作为输入,控制输出脉冲频率,从而对随动轴的速度进行调节,实现电机的跟随运动.设计中选用C8051F310单片机为核心,使用AD9850芯片做为脉冲信号发生模块搭建了硬件系统,使得测头数值和输出脉冲频率成线性比例关系,并给出了板卡驱动程序的设计.     

基于CPCI接口的图像采集卡的设计

针对图像采集对数据的可靠性、稳定性传输要求,利用PLX公司的PCI 9656作为CPCI的桥接芯片,以ALTERA公司的Cyclone Ⅲ型FPGA作为时序控制、数据缓存,实现了CPCI接口的专用图像采集卡的设计。     

程控多功能信号发生器的设计

程控多功能信号发生器可以实现三角波方波以及正弦波的产生,并且频率、幅值、占空比以及周期个数可以调节。本设计采用AT89S52单片机为主控芯片、MAX038为信号发生芯片。AT89S52控制MAX038分别产生三角波、正弦波以及方波。MAX038输出信号的频率是通过振荡频率参考电流输入端的电流、振荡频率参考电流输入端的电压和外接振荡电容器端的外接电容控制的;占空比是通过脉冲占空比调节输入端电压控制;幅值是通过一个模拟乘法器控制;周期数的控制通过软件定时的方法实现。     

基于CPCI总线的雷达信号源板及其驱动的开发

根据CPCI总线的结构及特点,结合其桥接芯片PCI9054局部接口设计特性,开发了基于CPCI总线的雷达信号源板。在内核态讨论了基于CPCI总线设备驱动程序的开发,利用Driverstudio,VC＋＋设计了CPCI总线设备驱动程序和调试驱动程序,实现对CPCI总线控制器PCI9054的访问与控制,提高数据读写的速率,为雷达信号处理机系统的调试工作提供了便利。     

基于FPGA的多信号合成的硬件设计与实现

提出了一种以FPGA为主控芯片、基于DDS技术的多信号合成设计方案,并用硬件实现了该系统。系统主要实现两个功能:首先,实现了输出8路频率、相位和幅度可调的正弦波信号;其次,将8路正弦波信号叠加后输出,完成了多路信号合成的硬件实现。硬件系统由数字逻辑部分和模拟电路两部分组成;数字逻辑部分在QuartusⅡ8.1上设计,并通过Active Serial Programming下载到FPGA的配置芯片EPCS4中,逻辑功能都在FPGA芯片内部完成;该部分控制液晶显示器和键盘,实现对正弦波信号的调制输出;模拟电路部分在Altium Designer Summer 09上设计,应用PCB工艺制作成电路板。模拟电路部分连接数字逻辑部分的输出,完成调制信号的滤波和信号合成。     

基于FPGA的雷达信号处理板设计与实现

基于CPCI总线,使用FPGA实现了雷达信号处理板的设计与实现。实现数字下变频,大时宽带宽积数字脉冲压缩以及FFT等通用雷达信号处理功能。最后给出了数字下变频和大时宽带宽积数字脉冲压缩在某雷达系统中的测试结果,测试结果满足系统要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.