楔型发射体真空微电子三级管的计算机模拟

本文利用广泛使用的ＰＩＣ粒子模拟软件ＭＡＧＩＣ模拟了楔型场致发射真空微电子三极管的一个单元的特性，该单元由一个楔型场致发射体，栅极和阳极组成。研究了栅极电压，阳极电压和发射体顶点半径等对发射电流的影响。给出了一个典型的楔型场致发射真空微电子三极管，当其阳极电压为５００Ｖ，阳极与阴极相距４μｍ时的电子轨迹图。模拟结果表明场致发射的栅极开启电压为２５０Ｖ。并得到了三极管高频工作时动力学特性。     

楔型发射体真空微电子三极管的计算机模拟

本文利用广泛使用的ＰＩＣ（ｐａｒｔｉｃｌｅ－ｉｎ－ｃｅｌｌ）粒子模拟软件ＭＡＧＩＣ模拟了楔型场致发射真空微电子三极管的一个单元的特性。该单元由一个模型场致发射体、栅极和阳极组成。研究了栅极电压、阳极电压和发射体顶点半径等对发射电流的影响。给出了一个典型的楔型场致发射真空微电子三极管，当其阳极电压为５００Ｖ，阳极与阴极相距４μｍ时的电子轨迹图。模拟结果表明场致发射的阳极开启电压为２５０Ｖ。并得到了三极管高频工作时动力学特性。     

新型真空微电子压力传感器特征研究和实验制作

本提出并研究了新型的“台阶阴极”和“曲面阴极”真空微电子压力传感器．与普通的真空微电子压力传感器相比，新型传感器的阴极发射电流大大提高，使得输出信号易于检测，抗噪声能力增加，并在改善输出信号线性、提高灵敏度和扩展量程方面有很大优势。本给出了计算机模拟结果，简述了台阶阶陈列阴极和阳极压力敏感膜的制作，并展示了ＳＥＭ照片。     

待定系数法计算场致发射体阴极表面场强和发射电流密度

在计算场致发射体阴极发射电流时 ,影响发射电流的主要因素是阴极表面的电场强度。由于发射电流密度的大小和阴极表面场强呈指数关系 ,阴极表面场强很小的变化将引起发射电流的剧烈变化 ,所以提高阴极表面场强的计算精度是至关重要的。本文提出了一种计算阴极表面场强的新方法——待定系数法 ,并用该方法计算了一个二极管场致发射体的阴极表面电场强度和电流密度。     

钼阳极二极管测试大尺寸阴极发射性能的应用研究

针对大尺寸、高功率阴极在工程应用上的发射性能检测不准确问题,我们设计了不同钼阳极二极管结构并进行仿真计算,选择不同直径和深径比的阴极进行实验。仿真计算结果显示球面、栅网阳极二极管的结构可较好地表征了阴极发射电流,明显优于平面阳极二极管结构。应用研究结果与仿真结果一致,考虑工程应用成本,球面阳极二极管结构利于筛选出工程应用阴极。     

真空微电子器件发射稳定性和可靠性概述

解决真空微电子器件的稳定性和寿命问题，可以扩大场臻发射器的应用范围。本文概述了影响真空微电子场致发射阴极阵列发射稳定性的几个因素，认为阴极材料和功函数是决定真空微电子器件发射稳定性的主要因素。最后提出了解决发射稳定的几个建议。     

残气对活性Mo场致发射阴极阵列发射特性的影响

1引言场致发射阴极阵列对发射体尖端受污染是非常敏感的，这些污染来自真空封装内的各种残余气体。这些气体除了会改变尖端表面的性能，还会被场致发射的电子电离。这些能量高的离子撞击尖端引起尖端表面结构的变化，从而使发射电流不稳定，甚至使器件失效。因此，必须基本了解各种残气对场致发射阵列灵敏度的影响，以保证器件的发射电流具有长期的稳定性及可靠性。目前对场致发射真空微电子器件人们感兴趣的是将它用作矩阵寻址电子束激发源的平板场发射显示器（FED）。场致发射显示器与阳极射线管相类似，只是它采用薄型平板封装。FED工…     

基于火花试验装置的真空放电微观特性模拟研究

为了研究火花试验装置中电极在真空中放电的微观特性,本文建立了在真空环境下,以钨为阳极材料、镉为阴极材料的二维平行板放电模型.采用PIC/MCC(Particle-In-Cell/Monte Carlo Collision)方法对该模型进行仿真,研究了不同电子发射机制下平行板电极放电的发展过程以及空间场强、阴极表面温度和场增强因子对空间电子变化的影响,得到在场致发射、热发射以及热-场致发射作用下放电过程中的电子浓度和阳极吸收电流的变化以及电子密度和电势的空间分布等.研究发现,场致发射是微间隙阴极电子发射的主导发射机制,当阴极表面温度在焦耳热的作用下达到镉金属的沸点1040K时将产生镉蒸汽,电流密度和电子浓度逐渐增大,此时热发射将开始作用于微间隙放电;当温度大于镉金属气化温度后,场强的影响将大于温度的影响;当场增强因子很小时,热发射几乎不起作用,随着场增强因子不断增大,热发射的作用逐渐增强,导致空间电子浓度明显增加,真空环境下微间隙放电是由热-场共同作用的.     

真空微电子管的研制

本文介绍了采用硅的各向异性腐蚀、氧化削尖技术制成了发射性能较好的硅尖阴极阵列，并应用硅键合技术研制成真空微电子二极管。测试结果表明，起始发射电压为５－６伏，反向击穿电压大于５０伏，平均单尖发射电流在阳极电压２０伏时为０．０５μＡ。     

真空微电子器件应用研究

本文叙述了场致发射的机理及几种不同类型场致发射阴极的特点,并对场致发射技术在真空微电子器件方面的应用进行了分析。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.