Sol-Gel Route to Ferroelectric Layer-Structured Perovskite SrBi2Ta2O9 and SrBi2Nb2O9 Thin Films

Precursors for layer-structured perovskite thin films of SrBi₂Ta₂O₉ (SBT) and SrBi₂Nb₂O₉ (SBN) were prepared by the reactions of a strontium-bismuth double methoxyethoxide and tantalum or niobium methoxyethoxide in methoxyethanol, followed by partial hydrolysis. Several spectroscopic techniques, such as ¹H-, ¹³C-, and ⁹³Nb-NMR (nuclear magnetic resonance), and Fourier-transform infrared spectroscopy were used to analyze the arrangement of the metals and oxygen in the precursor molecules. The precursors contained Sr-O-M (where M is Ta or Nb) bonds (i.e., a strontium is connected to two MO₆ octahedra) and Sr-O-Bi bonds with a bismuth atom bonded to the oxygens of the MO₆ octahedron. The arrangement of metals and oxygens was considered to be similar to the layer-structured perovskite crystal sublattice. As a result, the sol-gel-derived SBT thin films crystallized, by rapid thermal annealing in an oxygen atmosphere below 550°C, and they exhibited preferred (115) orientation. The crystallinity improved and the crystallite size increased with temperature up to 700°C. In the case of SBN thin films, a low heating rate (2°C/min) was necessary for the control of the crystallographic (115) orientation, whereas a rate of 200°C/s (rapid thermal annealing) produced films that exhibited c -axis orientation. The (115) SBT thin film, heated to 700°C, exhibited improved ferroelectric properties.     

Structural Variation of the BaTi4O9 Thin Films Grown by RF Magnetron Sputtering

BaTi₄O₉ thin films were grown on a Pt/Ti/SiO₂/Si substrate using rf magnetron sputtering and the structure of the thin films were then investigated. For the films grown at low temperature (≤350°C), an amorphous phase was formed during the deposition, which then changed to the BaTi₅O₁₁ phase when the annealing was conducted below 950°C. However, when the annealing temperature was higher than 950°C, a BaTi₄O₉ phase was formed. On the contrary, for the films grown at high temperature (>450°C), small BaTi₄O₉ grains were formed during the deposition, which grew during the annealing. The homogeneous BaTi₄O₉ thin films were successfully grown on Pt/Ti/SiO₂/Si substrate when they were deposited at 550°C and subsequently rapid thermal annealed at 900°C for 3 min.     

Low-Temperature Fabrication and Enhanced Ferro- and Piezoelectric Properties of Bi3.7Nd0.3Ti3O12 Films on Indium TinOxide/Glass Substrates

Bi_3.7Nd_0.3Ti₃O₁₂ (BNT0.3) films were fabricated on indium tin oxide/glass substrates using a metal organic decomposition method at temperatures ranging from 500° to 650°C. A predominantly (100)-oriented BNT0.3 film can be obtained even at 550°C. The growth mode of the predominantly (100)-oriented BNT0.3 films fabricated by the sequential layer annealing method was discussed based on the structure evolution with the annealing temperature and the film thickness. The largest values of the remanent polarization and piezoresponse are observed in the BNT0.3 film annealed at 650°C, which can be ascribed to the grain growth and the release of the in-plane residue tension stress.     

Characterization of Photoluminescent (Y1–xEux)2O3 Thin Films Prepared by Metallorganic Chemical Vapor Deposition

The purpose of this study was to identify and correlate the microstructural and luminescence properties of europium-doped Y₂O₃ (Y_{1– x} Eu _x )₂O₃ thin films deposited by metallorganic chemical vapor deposition (MOCVD), as a function of deposition time and temperature. The influence of deposition parameters on the crystallite size and microstructural morphology were examined, as well as the influence of these parameters on the photoluminescence emission spectra. (Y_{1– x} Eu _x )₂O₃ thin films were deposited onto (111) silicon and (001) sapphire substrates by MOCVD. The films were grown by reacting yttrium and europium tris(2,2,6,6-tetramethyl–3,5-heptanedionate) precursors with an oxygen atmosphere at low pressures (5 torr (1.7 × 10³ Pa)) and low substrate temperatures (500°–700°C). The films deposited at 500°C were smooth and composed of nanocrystalline regions of cubic Y₂O₃, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600°C developed, with increasing deposition time, from a flat, nanocrystalline morphology into a platelike growth morphology with [111] orientation. Monoclinic (Y_{1– x} Eu _x )₂O₃ was observed in the photoluminescence emission spectra for all deposition temperatures. The increase in photoluminescence emission intensity with increasing postdeposition annealing temperature was attributed to the surface/grain boundary area-reduction effect.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Para-to-Ortho H2 Conversion on Gd, Y, Gd2O3, and Y2O3

The mechanism of parahydrogen conversion was studied on Gd₂O₃ and Y₂O₃ powders and on Gd and Y evaporated metal films at low and high temperatures (77° to 90°K and 298° to 418°K). Absolute rates of conversion are compared to theoretical values for 3 possible reaction mechanisms, and it is concluded that a paramagnetic vibrational mechanism is operative on Gd₂O₃, Gd, and Y. On Y₂O₃ the reaction rate is enhanced by additional surface paramagnetic sites. The portion of the surface which is active is ∼1 for the metals and ∼0.01 for the oxides.     

Glass–Ceramic Composites with Strontium Hexaferrite Ultrafine Particles in the SrO–Fe2O3–B2O3–SiO2 System

Glass samples with nominal compositions SrFe₁₂O₁₉+(12− n )SrB₂O₄+nSrSiO₃, n =3, 6, 9 were prepared by rapid quenching of the melt. Processes of glass devitrification were studied. The samples were annealed at temperatures of 600–900°C, and the resulting glass–ceramics was characterized by XRD, SEM, EDX, and magnetic measurements. SrFe₁₂O₁₉ crystallizes above 700°C and forms nano- and submicron platelet particles with the aspect ratio depending on the thermal treatment conditions. The glass–ceramic samples annealed at 900°C show coercive force values in the range of 422–455 kA/m.     

Surface Oxidation of Ge33As12Se55 Films

Ge₃₃As₁₂Se₃₃ films deposited by ultrafast pulse laser deposition were annealed at various temperatures and pressures, and the dependence of the surface oxidation on the processing conditions was investigated by X-ray photoelectron spectroscopy (XPS). We found that even as-grown film contains a thin oxidized surface and the oxygen distribution exponentially decays along the normal direction of the films regardless of different processing conditions. The critical thicknesses of the oxidized layers were 6.5, 11, 48, and 98 nm, respectively, for the as-grown, 250°C annealing sample for 4 h under 1 × 10⁻⁶ Torr, and 150° and 250°C annealing samples for 15 h under 20 mTorr.     

The System HfO2-Y2O3-Er2O3

A mathematical model of the liquidus surface based on a reduced polynomial method was proposed for the system HfO₂-Y₂O₃-Er₂O₃. The results of calculations according to this model agree fairly well with the experimental data. Phase equilibria in the system HfO₂-Y₂O₃-Er₂O₃ were studied on melted (as-cast) and annealed samples using X-ray diffraction (at room and high temperatures) and micro-structural and petrographic analyses. The crystallization paths in the system HfO₂-Y₂O₃-Er₂O₃ were established. The system HfO₂-Y₂O₃-Er₂O₃ is characterized by the formation of extended solid solutions based on the fluorite-type (F) form of HfO₂ and cubic (C) and hexagonal (H) forms of Y₂O₃ and Er₂O₃. The boundary curves of these solid solutions have the minima at 2370°C (15. 5 mol% HfO₂, 49. 5 mol% Y₂O₃) and 2360°C (10. 5 mol% HfO₂, 45. 5 mol% Y₂O₃). No compounds were found to exist in the system investigated.     

Oxygen-Enhanced Crystallization of Solution-Derived 12CaO·7Al2O3

12CaO·7Al₂O₃ (C12A7) composed of nanosize cage structure can clathrate oxygen radicals (O⁻) and has a high potential to application of strong oxidizing catalysis. In the present report, we demonstrate a fabrication route to C12A7 fine powders by Chemical Solution Deposition method in order to enhance the catalytic reactivity. Aluminum sec-butoxide, calcium nitrate tetrahydrate, acetylacetone, 2-methoxyethanol, and nitric acid were used as raw materials. Precursor solution was dried and annealed at 800°–900°C in air or O₂ atmosphere. Crystalline C12A7 powders were obtained by annealing at 900°C in O₂ atmosphere. Scanning electron microscope and transmission electron microscope images of the obtained powders revealed C12A7 particles were sintered and formed several micrometer particles with many pores. BET specific surface area of the powders was 4.2 m²/g. Possibility for synthesizing C12A7 powder with higher specific surface area by the solution process was indicated.     

Synthesis of ZrO2 and Y2O3-Doped ZrO2 Thin Films Using Self-Assembled Monolayers

Undoped or Y₂O₃-doped ZrO₂ thin films were deposited on self-assembled monolayers (SAMs) with either sulfonate or methyl terminal functionalities on single-crystal silicon substrates. The undoped films were formed by enhanced hydrolysis of zirconium sulfate (Zr(SO₄)·4H₄O) solutions in the presence of HCl at 70°C. Typically, these films were a mixture of two phases: nanocrystalline tetragonal- ( t -) ZrO₂ and an amorphous basic zirconium sulfate. However, films with little or no amorphous material could be produced. The mechanism of film formation and the growth kinetics have been explained through a coagulation model involving homogeneous nucleation, particle adhesion, and aggregation onto the substrate. Annealing of these films at 500°C led to complete crystallization to t -ZrO₂. Amorphous Y₂O₃-containing ZrO₂ films were prepared from a precursor solution containing zirconium sulfate, yttrium sulfate (Y₂(SO₄)₃8·H₂O), and urea (NH₂CONH₂) at pH 2.2–3.0 at 80°C. These films also were fully crystalline after annealing at 500°C.     

Preparation of YBCO Films on CeO2-Buffered (001) YSZ Substrates by a Non-Fluorine MOD Method

YBa₂Cu₃O_7−δ (YBCO) films were fabricated via a fluorine-free metal organic deposition (MOD) method followed by high-temperature, low oxygen partial pressure annealing. Trimethyl acetate salts of copper, yttrium, and barium hydroxide were used as the precursors, which were dissolved in proponic acid- and amine-based solvents. After spin-coating and burnout, samples were annealed at 740°C in 180 ppm oxygen partial pressure and exposed to humid atmosphere for different times. A critical transition temperature, T _c( R =0) of 90.2 K and a transport critical current density ( J _c) of 0.55 MA/cm² (77 K and self-field) were obtained for 0.2 μm YBCO films on CeO₂-buffered yttria-stabilized zirconia (YSZ) substrates. X-ray studies shows that the YBCO films have sharp in-plane and out-of-plane texture for all samples; however, the porosity of the YBCO film varies with the time of exposure to the humid atmosphere. A reaction between YBCO and CeO₂ during the high-temperature anneals and formation of the reaction product BaCeO₃ was confirmed by X-ray diffraction (XRD) studies. The XRD and transmission electron microscopy analysis indicated that the epitaxial relations in the film were YBCO (00 l )//CeO₂ (00 l )//YSZ (00 l ) and YBCO [100]//CeO₂ [110]//YSZ [110].     

Low Breakdown Voltage Varistors by Grain Boundary Diffusion of Molten Bi2O3 in ZnO

Diffusion of molten Bi₂O₃ into the grain boundaries of sintered, alumina-doped (0.23 and 0.7 mol%) ZnO pellets resulted in varistors with breakdown voltages in the 3–5 V range and nonlinearity coefficients of 10–24. The varistors were fabricated by spreading a thin layer of Bi₂O₃ powder on the surface of ZnO pellets and heating the combination to various temperatures (860–1155°C) and different times. The highest nonlinearity coefficients (20–24) and lowest breakdown voltages (3–5 V) were recorded in samples annealed at 860°C for 35 min. Longer annealing times and/or higher temperatures resulted in progressively higher breakdown voltages. Eventually the devices became insulating, which was attributed to the formation of an insulating Bi₂O₃ layer between the grains. Separate wetting experiments have shown that the penetration of Bi₂O₃ into ZnO grain boundaries was a strong function of alumina doping —the penetration rate was decreased by a factor of 5–7 as the ZnO was doped with as little as 0.2 mol% alumina. It is this slowing down of the penetration of the ZnO grain boundaries that is believed to be critical in the development of the low breakdown voltages observed.     

Orientation Relationships of Reactively Grown Ba6Ti17O40 and Ba2TiSi2O8 on BaTiO3 (001) Determined by X-ray Diffractometry

Fresnoite grows at 700° and 800°C, and Ba₆Ti₇O₄₀ grows at 1200°C with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured fresnoite is formed at higher temperatures. The SiO₂ films react with the BaTiO₃ crystals, forming the phases Ba₂TiSi₂O₈ (fresnoite) and Ba₆Ti₁₇O₄₀. At 700° and 800°C, both phases grow with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured polycrystalline phases are formed at higher temperatures.     

Solid-State Diffusive Amorphization in TiO2/ZrO2 Bilayers

Thin films of crystalline TiO₂ were deposited on self-assembled organic monolayers from aqueous TiCl₄ solutions at 80°C; partially crystalline ZrO₂ films were deposited on top of the TiO₂ layers from Zr(SO₄)₂ solutions at 70°C. In the absence of a ZrO₂ film, the TiO₂ films had the anatase structure and underwent grain coarsening on annealing at temperatures up to 800°C; in the absence of a TiO₂ film, the ZrO₂ films crystallized to the tetragonal polymorph at 500°C. However, the TiO₂ and ZrO₂ bilayers underwent solid-state diffusive amorphization at 500°C, and ZrTiO₄ crystallization could be observed only at temperatures of 550°C or higher. This result implies that metastable amorphous ZrTiO₄ is energetically favorable compared to two-phase mixtures of crystalline TiO₂ and ZrO₂, but that crystallization of ZrTiO₄ involves a high activation barrier.     

Melt Processing of YBa2Cu3O7-x

Sintering YBa₂Cu₃O_{7- x} bulk forms at 1050°C followed by annealing at 980°C causes the development of a thick oriented surface layer (Lotgering factor = 0.7). The thickness of the layer depends on the thermal treatment, which is a two-step sintering process. Firing at 1050°C for 2.5 h followed by 30 h at 980°C leads to the development of a 0.1-mm-thick surface layer, with clear indication that longer annealing would result in a thicker film. Some orientation develops during un-axial compaction of the powders. Lotgering orientation factor calculation from X-ray diffraction analysis. SEM, and TEM were used to characterize the microstructure of these samples. T _c was similar to that of conventionally processed high-density samples, between 83 and 87 K. Some thermal treatments resulted in samples that displayed high resistivity above T _c , possibly caused by segregation of Cu to the grain boundaries.     

Ferroelectric and Dielectric Properties of Pb(Mg1/3Ta2/3)0.7Ti0.3O3 Thin Films Derived from RF Magnetron Sputtering

Pb(Mg_1/3Ta_2/3)_0.7Ti_0.3O₃ thin films of single perovskite phase were successfully synthesized by using the RF sputtering deposition technique, followed by post-thermal annealing. While the perovskite structure of Pb(Mg_1/3Ta_2/3)_0.7Ti_0.3O₃ is rather unstable, phase evolution in the thin films was manipulated by controlling both working pressure during the sputtering process and post-thermal annealing temperature. The desirable perovskite phase was promoted by increasing the working pressure in the range of 10–25 mTorr, followed by thermal annealing at 600°C. The ferroelectric, dielectric, and polarization behaviors of Pb(Mg_1/3Ta_2/3)_0.7Ti_0.3O₃ films were characterized over a wide range of frequencies. They are strongly affected by the film thickness, where the relative permittivity and remanent polarization increase, while the coercive field decreases with increasing film thickness in the range of 115–360 nm.     

Phase Relations In The Pseudo-Ternary System La2O3–SrO–Fe2O3

The phase relations in the pseudo-ternary system La₂O₃–SrO–Fe₂O₃ have been investigated in air. Isothermal sections at 1100° and 1300°C are presented based on X-ray diffraction and thermal analysis of annealed samples. Extended solid solubility was observed for the compounds Sr _{n +1− v} La _v Fe _n O_{3 n +1−δ} ( n =1, 2, 3, and ∞) and Sr_{1− x} La _x Fe₁₂O₁₉, while only limited solubility of La in Sr_{4− z} La _z Fe₆O_13±δ was observed. At high Fe₂O₃ content, a liquid with low La₂O₃ content was stable at 1300°C.     

Stability of Bi2Sr2Ca1Cu2O8 ±δ Thick Films at Elevated Oxygen Pressures and Temperatures

Bi₂Sr₂Ca₂Cu₂O_8±δ-type compound thick films were exposed to oxygen-argon-gas mixtures (1% to 20% oxygen gas) at elevated pressures (up to 207 MPa) and temperatures (500° to 940°C) for times ranging from 5 to 96 h. At a sufficiently high oxygen fugacity and temperature, Bi₂Sr₂Ca₁Cu₂O_8±δ decomposed via a solid-state reaction. Room-temperature X-ray diffractometry and electron probe microanalysis of decomposed films revealed the presence of Bi₂(Sr,Ca)₂-Cu₁O_6±θ ro-type compound, Bi₂Sr₂,Ca₁O_8±δ-type compound, and CuO. Bi₂Sr₂Ca₁Cu₂O_8±δ decomposition was accompanied by a modest weight gain, which was consistent with an oxidation reaction. The solid-state decomposition reaction could be reversed by heat treatment of decomposed films at 860°C in pure, flowing oxygen at ambient pressure.     

Thermal Degradation Behavior of WOP2O7/Phenanthroline Complex

An intercalation compound of WOP₂O₇/phenanthroline and a mixture of WOP₂O₇/carbon black were prepared to have equal carbon contents. Both samples were heated below 1400°C under a nitrogen atmosphere and their thermal degradation behaviors compared, with the following results: (1) CO gas evolved through carbothermal reduction at a temperature 150°C lower in the intercalation compound than in the WOP₂O₇/carbon black mixture. (2) Both WP and W formed at temperatures approximately 100°C lower in the intercalation compound than in the mixture. (3) Thermal degradation occurred homogeneously throughout the intercalation compound particles, and the particle morphology remained favorable after thermal degradation.