Characteristics of Metallic Waveguides Inhomogeneously Filled with Dielectric Materials with Surface Plasma Layers

The propagation of millimeter waves in metallic waveguides inhomogeneously filled with dielectric materials having surface plasma layers is characterized. The modal phase shift and attenuation of a 94-GHz wave are computed for a 10-µm plasma layer thickness as a function of carrier density. In the unexcited state, 90 percent of the millimeter-wave power is confined to the interior air region of the guide, while the remaining 10 percent propagates in the semiconductor insert. In the excited state at high injection levels, over 99 percent of the wave power propagates in the air region. Consequently, in this state, the waveguide will have a very low loss. A resonant cavity using the waveguide configuration shown to have a wide tuning range and high cavity Q.     

Analysis of millimeter wave phase shifters coupled to a fixedperiodic structure

The propagation characteristics of an active plasma-induced millimeter wave phase shifter coupled to a fixed periodic structure are discussed. The numerical calculation is based on an improved boundary value solution. Like a normal dielectric slab waveguide with a plasma layer, the grating waveguide displays a phase shift with the increase of the plasma density. This phase shift due to the significant change of the field distribution has an impact on the modal attenuation coefficient. It results in the scanning of the radiation beam in the vicinity of the second Bragg, Especially, at both weak and strong plasma densities when the mode losses are small, the resonances caused by the periodic structure do not appear to be weakened. The results can be used to design electronically controllable millimeter wave scanning antennas     

The synthesis of surface reactance using an artificial dielectric

A thin artificial dielectric layer consisting of a rectangular array of closely spaced, thin conductive cylinders (pins), was constructed above a perfectly conducting ground plane. The reactance of the surface was measured at 4.8 GHz for a variety of pin heights and dielectric embedding material by measuring the height-gain profile of a transverse magnetic (TM) surface wave launched across it. Design equations using the theories of artifical dielectrics and propagation in anisotropic media are given. These can be used to predict the surface reactance providing a correction factor accounting for fringing fields at the tops of the pins is included. Using an embedding dielectric tends to reduce this fringing effect.     

Attenuation and Radiation Characteristics of the HE /Sub 11/ - Mode

The asymptotic properties of the fundamental mode HE /sub 11/ inside a large waveguide of finite surface impedances are discussed. The analysis applies to corrugated waveguides, certain optical fibers and wave-guides with metal walls coated by a dielectric layer. It is shown that for k-->/spl infin/ the HE /sub 11/ mode has the following two properties: it is polarized in one direction and the field vanishes at the boundary. Because of these properties, it is useful in the design of microwave feeds, since it minimizes cross-polarization and edge illumination at the aperture. It is also useful for long distance communication because of its low attenuation constant. Both the far field of a feed and the attenuation constant are discussed. It is shown that rectangular apertures have negligible cross-polarization over wider bandwidth than circular apertures. Furthermore, if the medium inside a waveguide is Iossless, so that power is lost only at the boundary, then the attenuation constant is very small, it is asymptotic to (ka)/sup -2/ for large ka, where k= 2 pi/lambda and a is a characteristic dimension of the waveguide. A rectangular waveguide consisting of four metal plates coated with thin dielectric layers is shown to be attractive for long distance communication, because of its simplicity of fabrication and its low attenuation.     

激波管等离子体中太赫兹波传输特性仿真与实验研究

研究了太赫兹波在透射波窗口封闭的激波管中的等离子体中的传输特性,获得了传输衰减量随等离子体电子密度、碰撞频率、透波窗口材料以及电磁波频率的变化规律,并比较了相同条件下毫米波的传输特性.利用激波管为实验平台模拟产生高速飞行器等离子体,开展了太赫兹波在等离子体中传输特性实验.结果表明,太赫兹波在相同电子密度和碰撞频率的等离子体中衰减量比毫米波小得多;随着等离子体碰撞频率的增加,太赫兹波传输衰减量先增加后减小,透波窗口增加了太赫兹波的传输衰减;随着窗口材料的介电常数增加,太赫兹波反射率增加,太赫兹波传输衰减曲线出现周期性振荡,振荡周期约5 GHz;太赫兹波通信可能作为一种解决再入飞行器黑障问题的有效技术途径.     

Radiation from Bends in Dielectric Rod Transmission Lines

The radiation from the fundamental mode propagating around curved dielectric rod transmission lines is investigated experimentally with microwave frequencies. Three methods are used to determine the attenuation by radiation: measuring the insertion loss of bends, measuring the Q-factor of ring resonators, and measuring the Q-factor of sections of curved dielectric rod transmission lines terminated by large reflecting plates. The attenuation is found to depend mainly on the combination R lambda/sub 0//sup 2/ / r/sub 0//sup 3/ where R is the radius of curvature, lambda/sub 0/ the free space wavelength and r/sub 0/ a measure of the transverse field extent of the HE/sub 11/ mode. The experimental results are compared with theoretical predictions of other authors. The measured values of the attenuation constant are found to be smaller than the theoretical values. The distribution of the electromagnetic field near bends is recorded using a semiautomatic field plotter. From the field pictures, it can be concluded that the curved dielectric waveguide radiates tangentially from the outer side. The results presented will also be useful for understanding the mechanism of radiation from bent optical waveguides.     

Radiation properties of slot and dipole elements on layered substrates

This paper presents calculations of the radiation properties of slot and dipole antennas on electrically thick, grounded, dielectric substrates. These structures offer the possibility of simplifying the fabrication of imaging array antenna structures which operate at millimeter wave and far infrared freqeuncies. They also offer the possiblility of good beam patterns which can be tailored to suit a specific need. We present an analysis of practical layered structures which have beam patterns that are suitable for millimeter wave and far-infrared imaging array applications. We discuss considerations of the choice of dielectric layers with regard to beam patterns, surface wave losses, and the type of element used. The effects of dielectric and ground plane losses in high-gain structures are also considered. Efficiencies and beam patterns for three and five layer structures are presented, although the analysis techniques are extendable to an arbitrary number of layers. It is found that in combination with the use of a twin element configuration, both slot and dipole antennas can overcome the problems of losses to surface waves in the substrate. Consequently, they can be made to efficiently radiate to air on these layered dielectric structures.     

Fields of a curved plasma layer excited by a slot

An analysis of the fields of a plasma coated conducting cylinder of infinite extent, excited by an infinite axial slot, is presented for large radius cylinders. The saddle point evaluation of the radiation fields is discussed for uniform low-loss plasma layers of arbitrary thickness and index of refraction. Patterns are presented and compared with the flat layer case, and the effect of the curvature on the pattern is discussed. The residue series evaluation is considered and a method of determining the poles is discussed. The locus of the first pole for thin lossless dielectric layers is presented and the transition from leaky waves to surface waves is discussed as a function of the dielectric constant and radius of curvature.     

A Parallel-Plate Waveguide Approach to Microminiaturized, Planar Transmission Lines for Integrated Circuits

The parallel-plate waveguide with a two-layer loading medium, a conducting semiconductor substrate, and a relatively thin dielectric layer approximates the interconnections in many integrated systems if the fringing fields are ignored. The fundamental mode of this structure is an E mode which is a surface wave. Its propagation behavior is analyzed in this paper and the equations are evaluated by highly accurate numerical methods. The semiconducting substrate is characterized by its dielectric constant and conductivity. A critical conductivity /spl sigma//sub min/ exists and is related to the cross sectional and material parameters. If the substrate conductivity is given by /spl sigma//sub min/ then the attenuation constant of the line is a minimum. The same value of conductivity yields minimum phase distortion at maximum bandwidth. If the conductivity is larger than /spl sigma//sub min/ the substrate acts as a poor conductor with associated skin effect; if it is smaller, lossy dielectric behavior results. Analysis shows that it is appropriate to subdivide the frequency range into three intervals. The lowest-frequency interval is characterized by propagation which resembles diffusion. This is caused by the loss in the dielectric layer. The next frequency range extends to some upper frequency which is determined by substrate conductivity and the cross-sectional dimensions. In this interval, the phase velocity of the fundamental mode is controlled by the ratio of dielectric to semiconductor thickness, which, if typical interconnections are considered, implies a very low velocity. This property indicates that the structure can serve as a delay line. Further increases in frequency result in higher phase velocities. Skin effect and dielectric loss behavior describe the propagation in this third interval.     

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.     

Quasi-static analysis of electrooptic modulators by the method oflines

A quasi-TEM analysis using the method of lines is implemented to calculate the electric field anywhere within a layered guided wave structure at appropriately low frequencies. The analysis provides the electric fields and transmission-line parameters for a shielded structure having any number of coplanar electrodes within an arbitrary number of anisotropic dielectric layers, the principal axes of which are parallel to the axes of the structure. The practical application considered is the calculation of the phase shift of a guided optical wave within an electrooptic modulator that has a dielectric buffer layer between the electrodes and electrooptic substrate     

参量变化对长程表面等离子体波特性的影响

为了掌握长程表面等离子体波的共振角度、共振峰半峰全宽以及衰减峰深度等重要特性,采用棱镜耦合激发介质-金属薄膜-介质对称结构中的长程表面等离子体波,研究了金属膜材料、厚度、介质折射率及介质厚度等参量变化时对长程表面等离子体波特性的影响。结果表明,实验中激发的长程表面等离子体波的衰减峰半峰全宽比传统的窄1~2个数量级;当介质膜厚度为500nm和1300nm时,激发的表面等离子体波的衰减深度只有薄膜厚度为700nm和1000nm时的1/2左右;随着介质膜厚度的增加,半峰全宽减小,金属膜越薄,衰减深度越深,衰减峰的半峰全宽值越小;介质膜折射率的改变对于半峰全宽的影响不明显;金属膜参量的变化将改变共振峰的位置。该研究为长程表面等离子体波的激发及应用于传感领域提供了有效依据,有利于其在波导和生物传感等方面的应用。     

不同类型降水对毫米波传播特性的影响研究

为了提高复杂降水条件下毫米波传播衰减的评估精度,通过分析多个地区的降水谱特征,得出具有代表性的层状云降雨、积层混合云降雨、积雨云降雨以及干雪、湿雪的谱分布参数,然后结合降水粒子的形状、相态、介电模型,计算降水体目标在毫米波波段的散射特性.结果表明,降水强度不是唯一影响毫米波传播衰减的因素; 降水粒子相态、谱分布、入射波频率和温度等对毫米波传播特性均有不同程度的影响,其中谱分布和数密度是影响降雨对毫米波衰减的主要因素; 冰水构成比例是影响降雪对毫米波衰减的主要因素; 不同相态的降水,尤其是干雪、湿雪和雨对毫米波传播影响的差异较大; 而温度的影响较小.并建立了考虑谱分布和温度的降水衰减模型.     

An improved technique and experimental results for the extractionof electron and hole mobilities in MOS accumulation layers

For the first time, experimental results are presented for electron and hole mobilities in the electron and hole accumulation layers of a MOSFET for a wide range of doping concentrations. Also presented is an improved methodology that has been developed in order to enable more accurate extraction of the accumulation layer mobility. The measured accumulation layer mobility for both electrons and holes is observed to follow a universal behavior at high transverse electric fields, similar to that observed for minority carriers in MOS inversion layers. At low to moderate transverse fields, the effective carrier mobility values are greater than the bulk mobility values for the highest doping levels. This is due to screening by accumulated carriers of the ionized impurity scattering by accumulated carriers, which dominates at higher doping concentrations. For lower doping levels, surface phonon scattering is dominant at low to moderate transverse fields so that the carrier mobility is below the bulk mobility value     

毫米波介质栅漏波天线的改进微扰法分析

本文用改进的微扰法分析了毫米波介质栅漏波天线的辐射特性。文中通过横向谐振法确定漏波天线的相位常数,而漏波常数的计算归结为对有源传输线方程的求解。所得数据和用场匹配方法得到的精确值进行了比较,结果表明,本文方法在保持相同精度的情况下,简化了分析和计算过程。     

Slot antenna impedance for plasma layers

The rectangular cavity or waveguide backed slot is covered by a plasma layer of finite thickness. The longitudinal variation of the voltage across the slot is obtained from the variational solution of an integral equation. The solution for plasma layer of finite thickness is obtained from the free space Green's function by the method of images. The fields outside the slot depend on the surface integral of the fields over the slot plane and over the surface of the plasma layer. If the thickness of the plasma layer is large compared with the wavelength, the fields on the surface of the plasma may be related to the voltage distribution along the slot by plane wave reflection coefficients. This leads to an integral equation that is reduced to a form suitable for machine computations. These calculations show the slot admittance to remain almost constant for plasma layers of various thicknessesh. The slot conductance tends to increase forh/ lambda <0.5. The presence of a plasma layer affects the voltage distribution along the slot for a center excited slot. The field distribution along the waveguide excited slot differs only slightly from the principal mode field distribution in the guide.     

The Groove Guide, a Low-Loss Waveguide for Millimeter Waves

A new waveguide for the low-loss transmission of millimeter waves is presented. The guide consists of two parallel conducting walls with grooves in the central region of the guide cross section. The grooves run along the guide in the direction of the wave propagation. It is shown that the waveguide, if excited in the TE-wave mode, has properties similar to those of the H guide, which contains a dielectric slab between the conducting walls in the center. The new guide is characterized by an exponential transverse decrease of the field distributions in direction from the center and by low attenuation. Theoretical considerations dealing with the field distribution and the data of the guide are presented.     

IMPROVED PERTURBATION ANALYSIS OF MILLIMETER-WAVE DIELEC TRIC GRATING LEAKY WAVE ANTENNA

An improved perturbation procedure is used for analyzing the radiation character-istics of the millimeter wave dielectric grating leaky wave antenna. The electromagnetic fields aredescribed in terms of an active transverse transmission line network, which brings considerablephysical insight into the overall behavior of the antenna. The analysis is simple and practical. Itsaccuracy is as high as the rigorous method.     

A new low-loss mode in semiconductor magnetoplasmas

A new semiconductor plasma wave mode that can propagate with very little attenuation at frequencies smaller than the plasma collision frequency is described. The wave propagates at right angles to a dc magnetic field and may be used for modulation of lasers or for tunable filters in the microwave /millimeter wave region.     

Characterization of accumulation layer capacitance for extracting data on high-/spl kappa/ gate dielectrics

A new parameter extraction technique has been outlined for high-/spl kappa/ gate dielectrics that directly yields values of the dielectric capacitance C/sub di/, the accumulation layer surface potential quotient, /spl beta//sub acc/, the flat-band voltage, the surface potential /spl phi//sub s/, the dielectric voltage, the channel doping density and the interface charge density at flat-band. The parallel capacitance, C/sub p/(=C/sub sc/+C/sub it/), was found to be an exponential function of /spl phi//sub s/ in the strong accumulation regime, for seven different high-/spl kappa/ gate dielectrics. The slope of the experimental lnC/sub p/(/spl phi//sub s/) plot, i.e., |/spl beta//sub acc/|, was found to depend strongly on the physical properties of the high-/spl kappa/ dielectric, i.e., was inversely proportional to [(/spl phi//sub b/m/sup *//m)/sup 1/2/K/C/sub di/], where /spl phi//sub b/ is the band offset, and m/sup */ is the effective tunneling mass. Extraction of /spl beta//sub acc/ represented an experimental carrier confinement index for the accumulation layer and an experimental gate-dielectric direct-tunneling current index. /spl beta//sub acc/ may also be an effective tool for monitoring the effects of post-deposition annealing/processing.