共查询到18条相似文献,搜索用时 203 毫秒
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磁控溅射法制备CdS多晶薄膜工艺研究 总被引:1,自引:0,他引:1
采用磁控法制备了CdS薄膜,研究工艺参数对样品沉积质量、沉积速率及晶体结构的影响。实验发现,在不同衬底上制备CdS薄膜时需要采取不同的后续工艺措施以获得较好的沉积质量。同时,制备样品的沉积速率随衬底类型、衬底温度、溅射功率及溅射气压的变化而变化。讨论并给出了工艺参数对上述实验结果的影响机制。X射线衍射谱显示,制备样品是六方和立方两种晶型的混合,沿(002)和(111)晶面择优取向生长。随溅射功率的增大和衬底温度的升高,两种晶型互相竞争生长并分别略微占优势。当溅射功率增大到200 W,衬底温度升高到200℃时,占优势晶型消失,薄膜择优取向特性变得更好。此外,随着溅射气压的增大,样品结晶质量下降,在0.5 Pa时呈现明显非晶化现象。 相似文献
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采用射频(RF)溅射,在Ba0.65Sr0.35TiO3(BST)薄膜和Pt/Ti/SiO2/Si衬底之间,制备10 nm厚的Ba0.65Sr0.35RuO3(BSR)缓冲层,研究了BSR缓冲层对BST薄膜结构和性能的影响.与没有加BSR缓冲层的BST薄膜相比,BSR缓冲层可以使BST薄膜呈高度a轴择优取向生长,改善了薄膜的介电常数,降低了薄膜的漏电流密度,使其热释电系数达到7.45×10-7 C·cm-2·K-1.这表明利用BSR缓冲层可以制备高热释电性能的BST薄膜. 相似文献
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利用正交设计分析了直流磁控溅射中溅射气压,衬底温度和N2浓度对SiO2/Si衬底上制备的AlN薄膜的(002)择优取向的影响水平。利用X-射线衍射(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)对薄膜的晶向和表面形貌进行了分析,得到制备高度择优取向的AlN薄膜的最佳期望条件:衬底温度为250℃,溅射气压为2Pa,N2浓度为75%;并得出了氮气浓度对薄膜的(002)择优取向的影响较大。具有择优取向的AlN薄膜的折射率约为2.06。 相似文献
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利用脉冲激光沉积( PLD)技术,通过一系列实验成功地制备出了近外延生长的Ba0.4Sr0.6TiO3铁电薄膜.研究了衬底对Ba0.4Sr0.6TiO3铁电薄膜外延质量的影响.从摇摆曲线的半高宽(FWHM)及原子力显微镜(AFM)图谱中可以看出,在铝酸锶钽镧(LAST)衬底上生长的薄膜,外延质量明显比失配度更小的钛酸锶... 相似文献
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直流反应溅射TiO2薄膜的制备及其性能研究 总被引:3,自引:1,他引:3
采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2
V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1
mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料. 相似文献
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采用射频溅射法在Si(111)基片上制备了(Ba,Sr)TiO3(BST)薄膜,并对制备的薄膜进行了快速退火热处理.采用X射线衍射和原子力显微镜分析了退火温度、退火时间和加热速度对BST薄膜晶化行为的影响.研究结果表明,BST薄膜的晶化行为强烈依赖于退火温度、退火时间和加热速度.BST薄膜的结晶度随退火温度的升高而提高.适当的热处理可降低BST薄膜的表面粗糙度,BST薄膜的表面粗糙度随退火温度的升高经历了一个先降低后增大的过程,但退火后BST薄膜的表面粗糙度都小于制备态薄膜的表面粗糙度.BST薄膜的晶粒尺寸随退火温度的升高经历了一个先增大后减小的过程.随退火时间的延长,BST薄膜的特征衍射峰越来越强,薄膜的晶化程度越来越高.随退火时问的延长,BST薄膜的晶粒尺寸和表面粗糙度也经历了一个先增大后减小的过程.BST薄膜的晶粒大小主要由退火温度决定.高的升温速率可获得较小的晶粒. 相似文献
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采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明:较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料. 相似文献
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薄膜厚度和退火温度对纳米多晶硅薄膜特性影响 总被引:1,自引:0,他引:1
以高纯SiH4为气源,采用低压化学气相沉积方法在p型〈100〉晶向单晶硅上620℃制备纳米多晶硅薄膜,对不同薄膜厚度纳米多晶硅薄膜分别在700、800、900℃进行高温真空退火,通过X射线衍射(XRD)、Raman光谱(Raman)、场发射扫描电子显微镜(SEM)和原子力显微镜(AFM)研究薄膜厚度、退火温度对薄膜结晶取向、表面形貌等结构特性影响。结果表明,随薄膜厚度增加,薄膜取向显著且多晶特征明显,沉积薄膜多晶取向为〈111〉、〈220〉和〈311〉晶向,择优取向为〈111〉晶向,TO模强度减弱且加宽,晶粒大小增加;同一薄膜厚度,随真空退火温度升高,X射线衍射峰强度增强,TO模强度增强。 相似文献
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Influence of deposition parameters on preferred orientation of RF magnetron sputtered BST thin films
Songzhan Li Yanqin Yang L. Liu T. J. Zhang W. H. Huang 《Journal of Materials Science: Materials in Electronics》2008,19(3):223-226
Ba0.65Sr0.35TiO3 (BST) thin films have been deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on
the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and field emission scanning
electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature,
annealing temperature and sputtering pressure. The as-deposited thin films at room temperature were amorphous. However, the
improved crystallization is observed for BST thin films deposited at higher temperature. As the annealing temperature increased,
the dominant X-ray diffraction peaks became sharper and more intense. The dominant diffraction peaks increased with the sputtering
pressures increasing as the films deposited at 0.37–1.2 Pa. With increasing the sputtering pressure up to 3.9 Pa, BST thin
films had the (110) + (200) preferred orientation. Possible correlations of the crystallization with changes in the sputtering
pressure were discussed. The SEM morphologies indicated the film was small grains, smooth, and the interface between the film
and the substrate was sharp and clear. 相似文献
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采用射频磁控溅射法,在单面抛光的Si(111)衬底上制备了PbTe薄膜,利用X射线衍射法分析了溅射工艺参数如溅射功率、溅射时间、衬底温度以及退火温度对PbTe薄膜的结晶质量的影响。结果表明:在溅射功率为30W,溅射时间为10 min,衬底未加热时制备的薄膜具有最好的〈100〉方向的择优取向性;退火处理可以改善薄膜的结晶质量,并且退火温度越高,薄膜的结晶质量越好。 相似文献
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Noh JP Jung KT Cho GB Lee SH Kim KW Nam TH 《Journal of nanoscience and nanotechnology》2012,12(7):5937-5941
LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 and Ti substrates. The effects of substrate and annealing on their structural and electrochemical properties of LiCoO2 thin film cathode were studied. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction and field emission scanning electron microscopy. The as-deposited films on both substrates have amorphous structure. The (104) oriented perfect crystallization was obtained by annealing over 600 degrees C in STS304 substrate. The LiCoO2 thin film deposited on Ti substrate shows the (003) texture after annealing at 700 degrees C. The electrochemical properties were investigated by the cyclic voltammetry and charge-discharge measurement. The 600 degrees C-annealed LiCoO2 film deposited on STS304 substrate exhibits the inithial discharge capacity of 22 uAh/cm2 and the 96% capacity retention rate at 50th cycles. The electrochemical measurement on annealed films over 600 degrees C was impossible due to the formed TiO2 insulator layer using Ti substrate. As a result, it was found that the STS304 substrate seems to be more suitable material than the Ti substrate in fabricating LiCoO2 thin film cathode. 相似文献
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用射频磁控溅射在Pt/Ti/SiO2/Si基体上沉积Ba0.6Sr0.4TiO3(BST)薄膜,用X射线光电子能谱(XPS)研究BST薄膜表层在常规晶化和快速晶化条件下的结构特征.结果表明,常规晶化时,BST薄膜表层约3-5nm厚度内含有非钙钛矿结构的BST,随着温度的升高该厚度增加;快速晶化时,该厚度减薄至1nm内,随着温度的升高没有明显增加.元素的化学态分析结果表明,非钙钛矿结构的BST并非来自薄膜表面吸附的CO和CO2等污染物,而与表面吸附的其他元素(如吸附氧)对表层结构的影响有关.GXRD和AFM表明,致密的表面结构能有效的阻止表面吸附元素在BST膜体中的扩散,从而减薄含非钙钛矿结构层的厚度. 相似文献
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Tianjin Zhang Jinzhao Wang Baishun Zhang Juan Jiang Runkun Pan Jun He 《Journal of Materials Science: Materials in Electronics》2007,18(8):877-882
(Ba1 − x
Sr
x
)TiO3 (BST) thin films were deposited on Pt/Ti/SiO2/Si and YSZ/Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering. The influence of YSZ interlayer on microstructures and dielectric
properties of BST thin films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy
and dielectric frequency spectra. It was found that the preferred orientation of BST thin films could be tailored by insertion
of YSZ interlayer and adjusting the thickness of YSZ interlayer. The BST thin films deposited on YSZ interlayer exhibited
a more compact and uniform grain structure than that deposited directly on Pt electrode. Dielectric measurement revealed that
the BST thin films deposited on 10 nm YSZ interlayer have the largest dielectric constant and a low dielectric loss tangent.
The enhanced dielectric behavior is mainly attributed to the YSZ interlayer which serves as an excellent seeding layer to
enhance the crystallization of subsequent BST films layer, and a smaller thermal stress field built up at the interface between
YSZ interlayer and BST film layer. 相似文献
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Nelea V Morosanu C Bercu M Mihailescu IN 《Journal of materials science. Materials in medicine》2007,18(12):2347-2354
The interface between nano-crystalline hydroxyapatite (HA) thin films and a titanium alloy (Ti5Al2.5Fe) has been studied by
means of Fourier transform infrared spectrophotometry and X-ray diffraction at grazing incidence. The HA thin films were deposited
by radio-frequency magnetron sputtering in low pressure dry argon on substrates kept at low temperature or heated at 550 °C.
The effect of film treatment by sputtering and annealing in humid air, as a simple, effective way of restoring the crystallinity
and stoichiometry of the HA bulk, was studied in correlation with the development of a titanium oxide layer at the film-substrate
interface. An interfacial TiO2 film grew at the interface during annealing in moist air, while a TiO2 layer diffused into the HA films when directly sputtered at 550 °C. The formation of an interfacial titanium oxide layer
was inhibited by the insertion of a crystalline TiN buffer interlayer between the substrate and the HA film. Separately, the
mechanical characteristics of the different HA films were monitored by nanoindentation to find out how they had been affected. 相似文献