共查询到19条相似文献,搜索用时 93 毫秒
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探讨了新型可变光衰减器-光纤横向偏移型MEMS可变光衰减器的微磁驱动方式,从理论上分析了微磁执行器设计时应遵从的原理,讨论和设计了微磁执行器的各个参数,新开发了结合使用正胶(AZ-4000系列)和负胶(SU-8系列)的UV-LIGA工艺:在制作了光纤定位槽的基片上溅射Cr/Cu作为电镀种子层,涂布正胶,紫外光刻得到电镀模具,电镀Cu和FeNi分别得到线圈的下层、中层和上层以及铁芯;在完成下层和中层后,分别进行一次负胶工艺以形成电绝缘层和后续结构的支撑平台,即涂布负胶覆盖较下层结构,光刻开出了通往较上一层的通道并使SU-8聚合、交联以满足性能要求。并运用该工艺实现了微磁执行器。 相似文献
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SU-8胶及其在MEMS中的应用 总被引:1,自引:0,他引:1
SU 8胶是一种负性、环氧树脂型、近紫外线光刻胶。它适于制超厚、高深宽比的MEMS微结构。SU 8胶在近紫外光范围内光吸收度低 ,故整个光刻胶层所获得的曝光量均匀一致 ,可得到具有垂直侧壁和高深宽比的厚膜图形 ;它还具有良好的力学性能、抗化学腐蚀性和热稳定性 ;SU 8胶不导电 ,在电镀时可以直接作为绝缘体使用。由于它具有较多优点 ,被逐渐应用于MEMS的多个研究领域。本文主要分析SU 8胶的特点 ,介绍其在MEMS的一些主要应用 ,总结了我们研究的经验 ,以及面临的一些问题 ,并对厚胶技术在我国的应用提出建议和意见 相似文献
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为实现制作微针加工工艺简单、加工周期短及成本低的目的,提出了一种制作聚合物微针的新方法,这种聚合物微针的制作过程主要包括三个部分:微针原始模具的制作、聚合物微针模具的制作和浇铸工艺复制微针。通过KOH腐蚀液刻蚀晶面为{100}的Si片和紫外线对准光刻SU8胶得到由Si-SU8胶构成的原始模具,再在该模具上注入聚二甲基硅氧烷(PDMS)进行转模,固化脱模后在PDMS微针二级模具表面溅射一层Cu/Cr金属薄膜,然后再注入PDMS,得到最终的聚合物微针模具,对该模具进行浇铸工艺,便可批量制作微针。通过浇注PDMS获得微针初始结构,使针尖和针体合为一体,提高了脱模的可靠性;通过改变设计,能得到不同截面尺寸和长度的微针,因此这种方法具有很高的灵活性。 相似文献
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在多丝正比室(MWPC)受到严重挑战的形势下,微网气体探测器(micromegas)以其响应时间快、计数能力高的优势而从各种新型的气体探测器中脱颖而出。本文介绍了利用两种方法制作微网气体探测器微结构的工艺,一种是利用准LIGA工艺,以SU8胶为绝缘层;另一种是利用干膜做绝缘层来制作微网气体探测器。对比分析了SU8胶和干膜对于制作微网气体探测器的优劣。实验证明,利用干膜制作的微网气体探测器性能更好。使用放射源55Fe对其能量分辨本领进行了实验研究,结果利用干膜制作的微网气体探测器得到了有效增益,测出了逃逸峰。另外,还分析了使用编织丝网和电铸镍网对微网气体探测器的影响,实验证明,电铸镍网更适合于微网气体探测器的性能要求。 相似文献
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在多丝正比室(MWPC)受到严重挑战的形势下,微网气体探测器(micromegas)以其响应时间快、计数能力高的优势而从各种新型的气体探测器中脱颖而出。本文介绍了利用两种方法制作微网气体探测器微结构的工艺,一种是利用准LIGA工艺,以SU8胶为绝缘层;另一种是利用干膜做绝缘层来制作微网气体探测器。对比分析了SU8胶和干膜对于制作微网气体探测器的优劣。实验证明,利用干膜制作的微网气体探测器性能更好。使用放射源55Fe对其能量分辨本领进行了实验研究,结果利用干膜制作的微网气体探测器得到了有效增益,测出了逃逸峰。另外,还分析了使用编织丝网和电铸镍网对微网气体探测器的影响,实验证明,电铸镍网更适合于微网气体探测器的性能要求。 相似文献
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Z. H. Ye W. D. Hu W. Lei L. Yang P. Zhang Y. Huang C. Lin C. H. Sun X. N. Hu R. J. Ding X. S. Chen W. Lu L. He 《Journal of Electronic Materials》2013,42(11):3164-3167
A multiple mask technique, integrating patterned silicon dioxide (SiO2) film over patterned thick photoresist (PR) film, has been investigated as a method to perform mesa etching for device delineation and electrical isolation of mercury cadmium telluride (HgCdTe) third-generation infrared focal-plane arrays. The multiple mask technique was achieved by standard thick PR photolithography, SiO2 film deposition to cover the thick PR patterned film, and etching the SiO2 film at the bottom region after another photolithography process. The dynamic resistance in the zero-bias and low-reverse-bias regions of HgCdTe photodiode arrays isolated by inductively coupled plasma (ICP) etching with the multiple mask of patterned SiO2 and patterned thick PR film underneath was improved one- to twofold compared with a simple mask of patterned SiO2. It is suggested that the multiple mask technique is capable of maintaining high etching selectivity while reducing the side-wall processing-induced damage of ICP-etched HgCdTe trenches. The results show that the multiple mask technique is readily available and shows great promise for etching HgCdTe mesa arrays. 相似文献
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Thick SU8 microstructures with high aspect ratio and good side wall quality were fabricated by ultraviolet (UV) lithography, and the processing parameters were comprehensively studied. It proves that the adhesion of SU8 on silicon (Si) substrates is influenced by Si-OH on the surface, and can be improved by the HF treatment. Cracks and delamination are caused by large internal stress during fabrication process, and are significantly influenced by soft bake and post-exposure bake processes. The internal stress is reduced by a low post-exposure bake exposure temperature of 85 °C for 40 min. A three-step soft bake enhances the reflowing of SU8 photoresist, and results in uniform surface and less air bubbles. The vertical side wall is obtained with the optimized exposure dose of 800 mJ/cm2 for the thickness of 160 µm. Using the optimized fabrication process combined with a proper structure design, dense SU8 micro pillars are achieved with the aspect ratio of 10 and the taper angle of 89.86°. Finally, some possible applications of SU8 in micro-electromechanical system (MEMS) device are developed and demonstrated. 相似文献
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A new technological process for fabricating structures with vertical walls in a thick layer of macroporous silicon on a substrate is reported. The problem of photolithography has been solved by patterning on the back side of the wafer. As a result, the silicon substrate itself serves as a mask through which certain parts of the porous layer are removed. Narrow and high bars of macroporous silicon, aligned with macropore rows, have been fabricated. The 2D photonic crystals obtained have been used for in-coupling of light in the direction perpendicular to the channel axes and for recording IR spectra. 相似文献
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一种PDMS薄膜型微阀的制备与性能分析 总被引:2,自引:0,他引:2
通过厚胶光刻工艺在硅片上制备SU-8胶模板,利用该模板制备了高分子聚合物PDMS(Polvdimethvlsiloxane,聚二甲基硅氧烷)微流道和薄膜结构。通过对不同结构的两层PDMS的不可逆粘接得到一种简单的阀结构,在外加气源压力作用下薄膜产生变形实现对微流道的控制。实验测量了微阀的控制气源压力与被控制液体流量之间的关系,说明膜阀的开闭性能良好。根据弹性薄膜的变形理论,对影响微阀性能的参数进行了分析,并提出了几种可行的用于薄膜微阀控制的方法。 相似文献