Effect of As Interstitial Diffusionon on the Properties of Undoped Semi-insulating LECGaAs

NDSILECGaAs crystals are widely used assubstrates for the fabrication of high perform-ance GaAs illtegrated circuit by an ion imPlama-tion technique. In the fabricaton Process, post-implamation annaling must be used to actiVatethe imPlanation atoms. Considerable changescan, howevef, occur in the elechical prOPeftiesof SI substfates after annealing. For examPle,the SI substfate is converted to p-tyPe conduc-ting [l] or a thin p-tyPe conducting layer is for-med on the surface of the SI…     

利用可控In气氛下热处理工艺制备Cd0．9Zn0．1Te：In

利用控制In气氛下的热处理工艺成功地制备了CdZnTe：In。不同In压下（Cd，Zn分压保持在平衡分压）的热处理实验结果表明：热处理后样品的电阻率可从6．75×10^5Ω·cm提高到10^8～10^1010Ω·cm；并且随着In压的增加，导电类型逐渐由p型转变为n型。热处理后样品的电阻率变化特征可以由In的扩散和施主缺陷InCd、受主缺陷VCd之间的补偿作用来很好地解释。利用扩散理论建立了CdZnTe：In的电阻率物理模型。利用热处理后样品的电阻率数据，计算了在873，973和1073K时In原子在CZT晶体中的有效扩散系数DIn，分别为3．455×10^-11，2．625×10^-10和5．17×10^-9cm^2／s。将扩散数据经过拟合后得到了DIn的表达式：1．35exp（-1．85eV／kT）cm^2／s（873～1073K）。     

退火工艺对Al-Zr-Er系高导铝合金组织和性能的影响

采用硬度计、电导率测试仪、扫描电镜(SEM)研究了退火工艺对水冷铜模制备的Al-Zr-Er合金组织和性能的影响规律。结果表明:Er元素添加量由0增加至0.30wt%,Al-Zr-Er合金内的初生Al(Fe,Er)相逐渐增多,在退火过程中则会析出大量纳米级Al₃(Zr、Er) 相。在等时退火过程中,硬度和电导率会形成两个峰值位置,即300~400 ℃的Al₃Er析出峰和500~550 ℃位置的Al₃(Zr,Er) 粒子析出峰;退火工艺中,多级退火可以更充分形成核壳结构Al₃(Zr,Er)粒子,硬度提升显著;三级退火过程中固溶在基体内的Zr、Er元素析出更充分,电导率提升最显著。成分方面,在Al-0.10Zr-xEr合金中,添加0.15wt%Er表现出更优越的综合性能;在Al-yZr-0.15Er合金中添加Zr元素虽然会提高合金硬度,但由于Zr元素析出不充分带来电导率的损失。     

Microstructure and electrical properties of thin films of ReSi1.75 produced by co-sputtering

Microstructural evolution and changes in electrical resistivity of ReSi_1.75 thin films produced by co-sputtering has been investigated as a function of annealing temperature. Crystallization of amorphous ReSi_1.75 thin films occurs at 600 °C without forming any metastable phases. The crystallization temperature for ReSi_1.75 is considerably higher than those observed for other transition-metal disilicides. The crystal structure as well as the domain (twinned) structure observed for crystallites in ReSi_1.75 thin films annealed above 600 °C are essentially the same as those observed in bulk crystals of ReSi_1.75. Although the grain size of crystallites increases with the increase in annealing temperature, thin films annealed below 650 °C exhibit a nano-crystalline structure. Thin films of amorphous and crystalline ReSi_1.75 and bulk polycrystalline ReSi_1.75 all exhibit electrical resistivity values decreasing with the increase in temperature, indicating the semiconducting nature. Values of electrical resistivity for crystallized thin films are systematically higher than those for amorphous ReSi_1.75 thin films and bulk polycrystalline ReSi_1.75 and increase with the decrease in annealing temperature, exhibiting a peak at just above the crystallization temperature. The high values of electrical resistivity around the crystallization temperature are discussed in terms of the formation of the nano-crystalline structure in thin films, for which the effective medium approximation is not valid.     

Influence of synthesis conditions on optical and electrical properties of CaTiO3:Pr3+ thin films deposited by radiofrequency sputtering for electroluminescent device

CaTiO₃:Pr³⁺ is a phosphor of great interest for electroluminescence application owing to its intense red emission characterized by CIE coordinates very close to those of the NSTC “ideal red”. In this paper, thin films of CaTiO₃:Pr³⁺ are deposited by radiofrequency sputtering technique in pure argon and post-treated by Rapid Thermal Annealing (RTA). The influence of the deposition pressure (0.125–4.5 Pa) and annealing conditions on the optical and electrical properties of the thin films is investigated. The chemical composition of the as-deposited films, checked by Rutherford Backscattering Spectroscopy (RBS), is close to that of the ceramic target used for the deposition. The crystal structure is confirmed to be orthorhombic by X-ray diffraction. We highlight an improvement of the optical and electrical properties of the films after RTA treatment. Moreover, a net gain is obtained by comparison with conventional thermal treatment procedures in classical furnaces, especially for the reduction of electrical defect densities.     

退火工艺对T2纯铜线材组织和性能的影响

通过冷拉拔塑性成形制备了T2纯铜线材,然后对其进行了400 ℃×60 min低温长时退火和850 ℃×(20,40,60) s高温短时退火试验。通过光学显微镜、扫描电镜、万能试验机和直流双臂电桥等,研究了不同状态线材的微观组织、力学和电学性能。研究表明:拉拔态纯铜线材的纤维状组织在退火后形成了再结晶晶粒,并伴有退火孪晶出现。随着850 ℃退火保温时间的增加,退火线材的再结晶晶粒不断长大,晶粒形貌更趋向等轴晶,组织均匀性得到提高。退火态线材的平均抗拉强度约是拉拔态的57.1%;断后伸长率约是拉拔态10倍;经400 ℃×60 min退火,其导电率比拉拔态线材仅提高约0.3%;经850 ℃×(20,40,60) s退火其平均导电率比拉拔态线材提高约5.2%。高温短时退火后线材的综合力学性能和电学性能不仅比低温长时退火的性能较优,而且其具有较高的退火效率。拉拔态线材经850 ℃×40 s高温短时退火后具有较高的综合力学性能和导电性能。     

Preparation and properties of CdS thin films grown by ILGAR method

CdS thin films were deposited by the ion layer gas reaction (ILGAR) method. Structural, chemical, topographical development as well as optical and electrical properties of as-deposited and annealed thin films were investigated by XRD,SEM, XPS, AFM and UV-VIS. The results showed that the thin films are uniform, compact and good in adhesion to the substrates, and the growth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structure to the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. An amount of C, O and C1 impudries can be reduced by increasing the drying temperature or by annealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higher wavelength after annealing or increasing film thickness. The electrical resistivity decreases with increasing annealing temperature and film thickness.     

退火时间对中碳钢亚温淬火冷轧组织性能的影响

对热轧中碳钢板进行亚温淬火,随后冷轧(变形量50%)并进行不同时间退火,退火温度为550℃。通过扫描电镜(SEM)、X射线衍射(XRD)、背散射电子衍射(EBSD)对退火试样进行显微组织表征,并通过室温拉伸试验分析了双峰结构对力学性能的影响。结果表明,退火处理后的组织由铁素体和渗碳体两相构成,铁素体由细晶区/粗晶区共同组成。随着退火时间的延长,细晶峰值略有增大,但是增长并不明显,粗晶峰值晶粒呈减小趋势。随着退火时间的延长,试样的抗拉强度和屈服强度呈下降趋势,伸长率呈上升趋势,韧窝尺寸增大,深度增加,并且在大尺寸韧窝附近富集小尺寸韧窝。当退火时间为30 min时,力学性能最优。     

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.     

钛酸铋薄膜的磁控溅射及其退火处理

采用射频磁控溅射技术,在Pt/Ti/SiO2/Si衬底上制备了钛酸铋(Bi4Ti3O12,简称BIT)薄膜。研究了衬底温度及后续退火处理对薄膜结构和表面形貌的影响。结果表明:适宜的衬底温度为200℃。随着退火温度(650~800℃)的升高,BIT薄膜的结晶性变好,晶粒尺寸增大,c轴取向增强。当退火温度达到850℃时,开始出现焦绿石相;700~800℃为适宜的退火温度,在此条件下得到的BIT薄膜结晶良好,尺寸均匀,表面平整致密。     

Cu-Te合金的退火工艺

研究了退火工艺对Te含量分别为0.02%、0.07%、0.10%的3种Cu-Te合金的力学与导电性能及组织的影响,测试了不同退火温度和不同退火时间下合金的力学性能和导电性能,使用扫描电镜(SEM)研究了Cu-Te合金在不同退火温度下拉伸断口的形貌变化。结果表明:Cu-Te合金断裂属于韧性断裂,断裂形成的韧窝随着退火温度的上升,尺寸变得越大、越深,形状变得更加圆整;随着退火温度与退火时间的增加,Cu-Te合金的导电率持续增加,抗拉强度在350～390 ℃退火1 h时变化不大,合金处于回复阶段,400 ℃退火1 h后,抗拉强度大幅度下降,合金处于再结晶阶段;Cu-Te合金经过冷变形 (ε=96.5%)后,在400 ℃退火1 h,获得最佳的综合性能。     

Synthesis and electrical conductivities of charge-transfer complexes of bis(vinylenedithio)tetrathiafulvalene and its methyl derivatives with strong acceptors

Charge-transfer complexes of bis(vinylenedithio)tetrathiafulvalene (VT), bis(methylvinylenedithio)tetrathiafulvalene (DMVT) or bis(dimethylvinylenedithio)t tetrathiafulvalene (TMVT) with several strong acceptors, such as TCNQ, F₄TCNQ, DDQ, TCNE, Bu₄NBr₃ and I₂, were synthesized by leaving the mixed solution of a donor and an acceptor to stand at ambient temperature. Not only the usual 1:1 (donor:acceptor) complexes but also 2:1, 1:2, 3:1, 3:2 and 5:2 ones were obtained. Unfortunately, a single crystal of good quality was not obtained. The electrical conductivities of the compressed pellet samples were measured by van der Pauw's method. Most of them showed high conductivities of 10⁰–10⁻¹ S cm⁻¹ at room temperature. However, the TCNQ complexes were insulators. The electrical conductivities could be explained on the basis of the i.r. spectra of the complexes and the redox potentials of the donor and acceptor molecules.     

合金元素及中间退火对Cu-Cr系形变原位复合材料组织和性能的影响

采用冷拔结合中间退火工艺制备出Cu-13%Cr-0.24%Zr、Cu-15%Cr-0.24%Zr和Cu-15%Cr形变原位复合线材。研究了Cr含量、Zr元素、中间退火温度及次数对线材极限抗拉强度及导电性能的影响。结果表明:Zr元素可显著提高材料的强度,且对其导电性能影响不大;提高Cr元素含量,对材料的强度有一定贡献,但效果不明显。增加中间退火次数和提高中间退火温度都会使材料的极限抗拉强度降低,导电率升高。本实验中,通过两次500oC中间退火工艺制备的Cu-15%Cr-0.24%Zr线材获得较为优异的综合性能,抗拉强度达到1056MPa,导电率达到73%IACS。     

AA8079双零铝箔的中间退火工艺

用扫描电镜、透射电镜研究了不同退火工艺条件下0.04 mm厚AA8079冷轧态铝箔第二相的演变规律,并测试了其显微硬度值的变化情况。 结果表明,当退火工艺为200 ℃×6 h时,析出短棒状的β_b(AlFeSi)相和细小粒状α_c(AlFeSi)相;当退火工艺为350 ℃×6 h时,发生了β_P(AlFeSi)相到α_c(AlFeSi) 相转变,且析出型α_c(AlFeSi) 相有些在晶内析出,有些沿位错线附近析出;AA8079铝箔的最佳中间退火工艺为400 ℃×6 h     

Effect of the final annealing of cold rolled stainless steels sheets on the electronic properties and pit nucleation resistance of passive films

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.     

Microstructure and electrochemical characteristics of nonstoichiometric La-rich AB5-type ahoy for Ni/MH battery electrode

The nonstoichiometric La-rich mischmetal (designated by Ml)-based hydrogen storage alloy with a composition of Ml(Ni0.64Co0.20Mn0.12Al0.04)4.76 was prepared by arc melting and annealed at 1173 K for 10 h to investigate the effect of annealing treatment on the microstructure and electrochemical characteristics of the alloy. X-ray diffraction analysis showed that annealing can cause a release of the crystal lattice strain and an increase in amounts of the La2Ni7-type second phase in Ml(Ni0.64Co0.20Mn0.12Al0.04)4.76 alloy. Scanning electron microscopy and electron probe microanalysis examinations indicated that annealing leads to disappearance of the dendrite structure in the as-cast alloy, growth of crystal grain, and decrease of composition segregation. The annealing at 1173 K for 10 h flattened and extended the potential plateau and inprovement in electrochemical characteristics was discussed based on the alloy microstructure change induced by annealing.     

Texture Evolution Behavior and Its Triggered Mechanical Anisotropy of CP Ti During Severe Cold Rolling and Subsequent Annealing

The texture evolution behavior and its triggered mechanical anisotropy of commercially pure titanium(CP Ti) during severe cold rolling and subsequent annealing are discussed based on the optical microscopy and the electron backscattered diffraction analyses. Some enlightening results are found. It is shown that planar textures exist under all treatments, namely the {11–29}10–10 under rolling state, the {11–27}10–10 under 300 °C annealing state and the {11–24}10–10 under 500 °C annealing state. This indicates that the crystal plane indices of planar texture change toward {-12–10} with increasing annealing temperature, which is a result of crystal lattice rotation. Planar texture triggers anisotropy of the mechanical properties for CP Ti sheets under all treatments. In particular, CP Ti sheets exhibit severe and similar anisotropy behavior under rolling and 300 °C annealing states. Generally speaking, the rolling direction(RD) specimens get relatively low yield strength, high ultimate tensile strength and good plasticity, and RD + 45° specimens show relatively high yield strength, low ultimate tensile strength and good plasticity. The transverse direction specimens, however, usually exhibit high yield strength and low plasticity. It is proved that the above anisotropy behavior is mainly determined by the Schmid factor distribution of the(10–10)[11–20] prismatic slip system in different directions. Due to the non-negligible influence exerted by the(0001)[11–20] basal slip system after 500 °C annealing, the anisotropy behavior under this state is obviously different.     

Characteristics of Si~ /B~ dual implanted silicon wafers

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Transformation behaviors of Ti48.5Ni48Fe2Nb1.5 dependence of annealing and thermomechanical cycling

The effect of annealing treatments and thermomechanical cycling on the transformation behaviors and shape memory effect of Ti48.5Ni48Fe2Nb1.5 shape memory alloys were investigated using electrical resistivity measurement and tensile testing. It is found that the transformation behaviors are influenced considerably by the annealing treatments. Both Ms and As increase with increasing annealing temperature and cooling rate. Martensite stabilization occurs during thermomechanical cycles, thus resulting in lower...     

Effect of elevated-temperature annealing on microstructureand properties of Cu−0.15Zr alloy

Cu−0.15Zr (wt.%) alloy with uniform and fine microstructure was fabricated by rapid solidification followed by hot forging. Evolution of microstructure, mechanical properties and electrical conductivity of the alloy during elevated-temperature annealing were investigated. The alloy exhibits good thermal stability, and its strength decreases slightly even after annealing at 700 °C for 2 h. The nano-sized Cu₅Zr precipitates show significant pinning effect on dislocation moving, which is the main reason for the high strength of the alloy. Additionally, the large-size Cu₅Zr precipitates play a major role in retarding grain growth by pinning the grain boundaries during annealing. After annealing at 700 °C for 2 h, the electrical conductivity of samples reaches the peak value of 88% (IACS), which is attributed to the decrease of vacancy defects, dislocations, grain boundaries and Zr solutes.