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1.
A laterally movable gate field effect transistor (LMGFET) device that directly couples lateral mechanical gate motion to drain current of a FET is presented in this paper. Lateral motion of the FET gate results in a change in channel width, keeping the channel length and the gap between the gate and the oxide layer constant. This results in a change in channel current that, in principle, is linearly proportional to mechanical motion. The operating principle of an LMGFET, along with details of the fabrication process for a depletion-type LMGFET device, is described. Fabricated LMGFET shows an average drain current sensitivity to gate motion of $-5.8 muhbox{A}/muhbox{m}$ at $V_{rm DS} = 20 hbox{V}$ and $V_{rm GS} = 0 hbox{V}$ for 60-$muhbox{m}$ gate motion. A model for the fabricated LMGFET is developed based on electrical measurements. The device shows promise both as a sensor and as an actuator in MEMS and other related applications.$hfill$ [2008-0147]   相似文献   

2.
We present the modeling, design, fabrication, and measurement results of a novel digital micromirror based on a new actuator called interdigitated cantilevers. In contrast to conventional micromirrors that rotate through the twisting actuation of a hinge, this micromirror has a symmetric bidirectional rotation through a bending actuation of interdigitated cantilevers hidden under a mirror plate. For the static and dynamic characteristics of the proposed micromirror, analytical models were developed first on the basis of the Euler–Bernoulli beam equation, as well as both distributed- and lumped-parameter models. The results of the developed analytical models are in good agreement with those of a finite-element-method (FEM) simulation, having just a 10% deviation. On the basis of these analytical models, we successfully designed, fabricated, and evaluated a micromirror with a mirror size of $16 muhbox{m} times 16 muhbox{m}$. The fabricated micromirror has a mechanical rotation angle of $pm 10^{circ}$, a pull-in voltage of 54 V, a resonant frequency of 350 kHz, and a switching response time of 17 $muhbox{s}$. The measurement results compare favorably with those of analytical models and FEM simulations, with deviations of less than 15% and 10%, respectively. $hfill$[2009-0139]   相似文献   

3.
This paper presents the design, fabrication, and characterization of a new serial digital actuator, achieving an improvement in range-to-precision and range-to-voltage performance. We propose a weight-balanced design for the serial actuators with serpentine springs with a serial arrangement of unit digital actuators. We have measured the displacement range, precision, and drive voltage of unit and serial actuation at 1 Hz. The serial digital actuators produce a full-range displacement of $28.44 pm 0.02 muhbox{m}$ , accumulating unit displacements of $2.8 pm 0.5 muhbox{m}$ at an operating voltage of 4.47 $pm$ 0.07 V. In addition, the serial digital actuators that have a displacement precision of 37.94 $pm$ 6.26 nm do not accumulate the displacement errors of the unit actuators, i.e., 36.0 $pm$ 17.7 nm. We experimentally verify that the serial digital actuators achieve a range-to-squared-voltage ratio of 1.423 $muhbox{m/V}^{2}$ and a range-to-precision ratio of 749.6.$hfill$ [2009-0020]   相似文献   

4.
We present a new two-axis spiral-shaped micromirror manipulator developed for free-space optical switching. The actuator is an electrostatic actuator, which is composed of two different parts that are fabricated using conventional surface-micromachining processes and are then assembled. Instead of conventional monolithic self-assembling design approaches, these two parts are fabricated on two different chips and assembled using a spatial–mechanical approach. The design utilizes the increased flexibility of the spiral-shaped electrode and the zipping-effect technique in order to increase the maximum rotation angle. The footprint of the assembled device is $600 muhbox{m} times 600 muhbox{m}$, and the height of the micropyramid is 200 $muhbox{m}$. The switch is simulated using an energy method and a coupled electromechanical model. Its performance is measured statically using a reflection measurement approach. A continuous rotational actuation of 17$^{ circ}$ has been achieved with an actuation voltage of 235 V.$ hfill$[2008-0319]   相似文献   

5.
A 30-mm-long multimode waveguide, 40 $muhbox{m}$ wide and 40 $muhbox{m}$ high, is fabricated on a silicon wafer using polymer SU-8 as the core and liquid buffer as the cladding. Antibodies are successfully immobilized on the SU-8 surface designated for binding target antigens dispersed in the buffer solution. Evanescent-wave spectroscopy is performed by exciting the fluorescently labeled antigens, bound to the waveguide surface within its evanescence field, and measuring the emission light intensity. This evanescent-wave biosensor detects specific molecular interaction. The optical output as a function of the antigen concentration can be described by Langmuir equation. Antigen concentration as low as 1.5 $muhbox{g}/hbox{mL}$ is detected; concentrations higher than 100 $muhbox{g}/hbox{mL}$ lead to sensor saturation. $hfill$[2008-0058]   相似文献   

6.
This paper presents a contactless droplet manipulation system that relies on thermally generated Marangoni flows. Programmable 2-D control of aqueous microdroplets suspended in an oil film on a plain featureless glass substrate is achieved using a 128-pixel heater array suspended 100–500 $mu hbox{m}$ above the oil layer. The heaters generate surface temperature perturbations $(≪ 25 ^{circ}hbox{C})$, resulting in local Marangoni flows that can move droplets in either a push or a pull mode. Programmed movement is achieved by the sequential activation of the heaters, with digital control circuitry and a graphical interface providing addressable control of each heater. Droplets with diameters of 300–1000 $muhbox{m}$ are manipulated and merged at speeds up to 140 $muhbox{m/s}$. Evaporation rates can be reduced by almost two orders of magnitude by using a two-layer-oil medium, and the choice of an optimum carrier fluid can achieve fluid velocities over 17 000 $mu hbox{m/s}$. The system provides a contactless platform for parallel droplet-based assays. As such, it circumvents the challenges of sample contamination and loss that occur when a droplet interacts with a solid surface.$hfill$[2008-0272]   相似文献   

7.
A hybrid integrated circuit (IC)/microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 $times$ 61 array of pixels that are $30 times 38 mu hbox{m}^{2}$ in size, each of which can be individually addressed with a 50-V peak-to-peak dc-to-10-MHz radio-frequency voltage. These high-voltage pixels produce electric fields above the chip's surface with a magnitude $vert vec{E}vert approx 1 hbox{V}/muhbox{m}$ , resulting in strong dielectrophoresis (DEP) forces $vert vec{F}_{ rm DEP}vert approx 1 hbox{nN}$. Underneath the array of DEP pixels, there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis. The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC/microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. $hfill$[2009-0142]   相似文献   

8.
In this paper, the thermal degradation of laterally operating thermal actuators made from electroplated nickel has been studied. The actuators investigated delivered a maximum displacement of ca. 20 $muhbox{m}$ at an average temperature of $sim!! 450 ,^{circ}hbox{C}$ , which is much lower than that of typical silicon-based microactuators. However, the magnitude of the displacement strongly depended on the frequency and voltage amplitude of the pulse signal applied. Back bending was observed at maximum temperatures as low as 240 $^{circ}hbox{C}$. Both forward and backward displacements increase as the applied power was increased up to a value of 60 mW; further increases led to reductions in the magnitudes of both displacements. Scanning electron microscopy clearly showed that the nickel beams began to deform and change their shape at this critical power level. Compressive stress is responsible for nickel pileup, while tensile stresses, generated upon removing the current, are responsible for necking at the hottest section of the hot arm of the device. Energy dispersive X-ray diffraction analysis also revealed the severe oxidation of Ni structure induced by Joule heating. The combination of plastic deformation and oxidation was responsible for the observed thermal degradation. Results indicate that nickel thermal microactuators should be operated below 200 $^{circ}hbox{C}$ to avoid thermal degradation.$hfill$[2009-0015]   相似文献   

9.
Analytical Model of Valveless Micropumps   总被引:2,自引:0,他引:2  
The flow driven by a valveless micropump with a single cylindrical pump chamber and two diffuser/nozzle elements is studied theoretically using a 1-D model. The pump cavity is driven at an angular frequency $omega$ so that its volume oscillates with an amplitude $V_{rm m}$. The presence of diffuser/nozzle elements with pressure-drop coefficients $zeta_{+}$, $zeta_{-}( ≫ zeta_{+})$ and throat cross-sectional area $A_{1}$ creates a rectified mean flow. In the absence of frictional forces the maximum mean volume flux (with zero pressure head) is $Q_{0}$ where $Q_{0}/V_{rm m}omega = (zeta_{-} -break zeta_{+})pi/16(zeta_{-}+zeta_{+})$, while the maximum pressure that can be overcome is $Delta P_{max}$ where $ Delta P_{max}A_{1}^{2}/V_{rm m}^{2} omega^{2} !=! (zeta_{-} -break zeta_{+})/16$. These analytical results agree with numerical calculations for the coupled system of equations and compare well with the experimental results of Stemme and Stemme.$hfill$ [2008-0244]   相似文献   

10.
N-channel 6H-SiC depletion-mode junction field-effect transistors (JFETs) have been fabricated, and characterized for use in high-temperature differential sensing. Electrical characteristics of the JFETs have been measured and are in good agreement with predictions of an abrupt-junction long-channel JFET model. The electrical characteristics were measured across a 2-in wafer for temperatures from 25 $^{ circ}hbox{C}$ to 450 $^{circ}hbox{C}$, and the extracted pinchoff voltage has a mean of 11.3 V and a standard deviation of about 1.0 V at room temperature, whereas pinchoff current has a mean of 0.41 mA with standard deviation of about 0.1 mA. The change in pinchoff voltage is minimal across the measured temperature range, whereas pinchoff current at 450 $^{circ}hbox{C}$ is about half its value at room temperature, consistent with the expected change in the $nmu_{n}$ product. The characterization of differential pairs and hybrid amplifiers constructed using these differential pairs is also reported. A three-stage amplifier with passive loads has a differential voltage gain of 50 dB, and a unity-gain frequency of 200 kHz at 450 $^{circ}hbox{C}$, limited by test parasitics. A two-stage amplifier with active loads has reduced sensitivity to off-chip parasitics and exhibits a differential voltage gain of 69 dB with a unity-gain frequency of 1.3 MHz at 450 $^{circ}hbox{C}$.$hfill$[2009-0029]   相似文献   

11.
Motivated by questions in robust control and switched linear dynamical systems, we consider the problem checking whether all convex combinations of $k$ matrices in $R^{n times n}$ are stable. In particular, we are interested whether there exist algorithms which can solve this problem in time polynomial in $n$ and $k$. We show that if $k= lceil n^{d} rceil $ for any fixed real $d>0$, then the problem is NP-hard, meaning that no polynomial-time algorithm in $n$ exists provided that $P ne NP$, a widely believed conjecture in computer science. On the other hand, when $k$ is a constant independent of $n$ , then it is known that the problem may be solved in polynomial time in $n$. Using these results and the method of measurable switching rules, we prove our main statement: verifying the absolute asymptotic stability of a continuous-time switched linear system with more than $n^{d}$ matrices $A_{i} in R^{n times n}$ satisfying $0 succeq A_{i} + A_{i}^{T}$ is NP-hard.   相似文献   

12.
We have developed a MEMS probe-card technology for wafer-level testing ICs with 1-D line-arrayed or 2-D area-arrayed dense pads layouts. With a novel metal MEMS fabrication technique, an area-arrayed tip matrix is realized with an ultradense tip pitch of $90 muhbox{m} times 196 mu hbox{m}$ for testing 2-D pad layout, and a 50-$muhbox{m}$ minimum pitch is also achieved in line-arrayed probe cards for testing line-on-center or line-on-perimeter wafers. By using the anisotropic etching properties of single-crystalline silicon, novel oblique concave cavities are formed as electroplating moulds for the area-arrayed microprobes. With the micromachined cavity moulds, the probes are firstly electroplated in a silicon wafer and further flip-chip packaged onto a low-temperature cofired ceramic board for signal feeding to an automatic testing equipment. The microprobes can be efficiently released using a silicon-loss technique with a lateral underneath etching. The measured material properties of the electroplated nickel and the Sn–Ag solder bump are promising for IC testing applications. Mechanical tests have verified that the microprobes can withstand a 65-mN probing force, while the tip displacement is 25 $muhbox{m}$, and can reliably work for more than 100 000 touchdowns. The electric test shows that the probe array can provide a low contact resistance of below 1 $Omega$, while the current leakage is only 150 pA at 3.3 V for adjacent probes.$hfill$[2008-0273]   相似文献   

13.
In this paper, we report on the design, fabrication, packaging, and testing of very reliable CMOS-integrated 10-$hbox{cm}^{2}$ 11-megapixel SiGe-based micromirror arrays on top of planarized six-level metal 0.18-${rm mu}hbox{m}$ CMOS wafers. The array, which is to be used as a spatial light modulator (SLM) for optical maskless lithography, consists of $8 {rm mu}hbox{m} times 8 {rm mu}hbox{m}$ pixels, which can be individually addressed by an analog voltage to enable accurate tilt angle modulation. Due to very stringent requirements on mounted-die flatness ($< hbox{0.01}$ mrad), the first level packaging of SLM die is done using specially designed SiC holders. To avoid trapped particles between the die and holder, which would jeopardize the flatness spec, special backside cleaning of the dies (less than or equal to one 0.8-${rm mu}hbox{m particle/cm}^{2}$ ) is needed before mounting the SLM die on the holder. To enable this backside cleaning and to avoid front-side particles during dicing, handling, and wire bonding, a temporary wafer- or zero-level packaging cap, which can be placed and removed at room temperature, was developed. The dynamic white light interferometer measurements of packaged dies showed that 99.5% of the 123 648 mirrors tested are within the spec. In addition, a stable average cupping of below 7 nm, an rms roughness of below 1 nm, and a stable actuation of over 2.5 teracycles are demonstrated.$hfill$[2009-0169]   相似文献   

14.
This paper examines the use of deep reactive ion etching of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of an $hbox{SiO}_{x}hbox{F}_{y}$ polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the $ hbox{O}_{2}$ flow rate and the capacitively coupled plasma power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using electron-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 $muhbox{m}$ , and 2 $muhbox{m}$. $hfill$[2008-0317]   相似文献   

15.
This paper describes the design, microfabrication, and testing of a novel polycrystalline-diamond (poly-C)-based microprobe for possible applications in neural prosthesis. The probe utilizes undoped poly-C with a resistivity on the order of $10^{5} Omegacdothbox{cm}$ as a supporting material, which has a Young's modulus in the range of 400–1000 GPa and is biocompatible. Boron-doped poly-C with a resistivity on the order of $10^{-3} Omegacdot hbox{cm}$ is used as an electrode material, which provides a chemically stable surface for both chemical and electrical detections in neural studies. The probe has eight poly-C electrode sites with diameters ranging from 2 to 150 $muhbox{m}$; the electrode capacitance is approximately 87 $muhbox{F/cm}^{2}$. The measured water potential window of the poly-C electrode spans across negative and positive electrode potentials and typically has a total value of 2.2 V in 1 M KCl. The smallest detectable concentration of norepinephrine (a neurotransmitter) was on the order of 10 nM. The poly-C probe has also been successfully implanted in the auditory cortex area of a guinea pig brain for in vivo neural studies. The recorded signal amplitude was 30–40 $muhbox{V}$ and had a duration of 1 ms. $hfill$[2008-0195]   相似文献   

16.
This paper is concerned with the design, fabrication, and characterization of novel high-temperature silicon on insulator (SOI) microhotplates employing tungsten resistive heaters. Tungsten has a high operating temperature and good mechanical strength and is used as an interconnect in high temperature SOI-CMOS processes. These devices have been fabricated using a commercial SOI-CMOS process followed by a deep reactive ion etching (DRIE) back-etch step, offering low cost and circuit integration. In this paper, we report on the design of microhotplates with different diameters (560 and 300 $muhbox{m}$) together with 3-D electrothermal simulation in ANSYS, electrothermal characterization, and analytical analysis. Results show that these devices can operate at high temperatures (600 $^{circ}hbox{C}$ ) well beyond the typical junction temperatures of high temperature SOI ICs (225 $^{circ}hbox{C}$), have ultralow dc power consumption (12 mW at 600 $^{circ}hbox{C}$), fast transient time (as low as 2-ms rise time to 600 $^{circ}hbox{C}$), good thermal stability, and, more importantly, a high reproducibility both within a wafer and from wafer to wafer. We also report initial tests on the long-term stability of the tungsten heaters. We believe that this type of SOI microhotplate could be exploited commercially in fully integrated microcalorimetric or resistive gas sensors. $hfill$[2007-0275]   相似文献   

17.
A microelectromechanical system actuator based on thermophoretic, or Knudson, forces is proposed using analytical calculations. It can potentially execute scanning or spinning motions of a body that is not mechanically attached to the reference substrate. For a silicon device of 100-$muhbox{m}$ diameter, it is calculated that it can be levitated at a distance of about 0.5 $muhbox{m}$ from a substrate and that it can execute scanning motion and use quasi-springs by laterally acting thermal forces. In this way, an engine with spinning motion of a floating body having a diameter of 200 $muhbox{m}$ with up to 5 kHz can be achieved.$hfill$[2008-0013]   相似文献   

18.
We present a new temperature compensation system for microresonator-based frequency references. It consists of a phase-locked loop (PLL) whose inputs are derived from two microresonators with different temperature coefficients of frequency. The resonators are suspended within an encapsulated cavity and are heated to a constant temperature by the PLL controller, thereby achieving active temperature compensation. We show repeated real-time measurements of three 1.2-MHz prototypes that achieve a frequency stability of $pm$ 1 ppm from $-20 ^{circ}hbox{C}$ to $+80 ^{circ}hbox{C}$, as well as a technique to reduce steady-state frequency errors to $pm$0.05 ppm using multipoint calibration.$hfill$[2009-0074]   相似文献   

19.
This paper describes different approaches to achieve high-performance microfabricated silicon-glass separation columns for microgas chromatography systems. The capillary width effect on the separation performance has been studied by characterization of 250-, 125-, 50-, and 25-$muhbox{m}$ -wide single-capillary columns (SCCs) fabricated on a $10 times 8 hbox{mm}^{2}$ die. The highest plate number (12 500/m), reported to date for MEMS-based silicon-glass columns, has been achieved by 25-$muhbox{m}$-wide columns coated by a thin layer of polydimethylsiloxane stationary phase using static coating technique. To address the low sample capacity of these narrow columns, this paper presents the first generation of MEMS-based “multicapillary” columns (MCCs) consisting of a bundle of narrow-width rectangular capillaries working in parallel. The theoretical model for the height-equivalent-to-a-theoretical-plate $(HETP)$ of rectangular MCCs has been developed, which relates the $HETP$ to the discrepancies of the widths and depths of the capillaries in the bundle. Two-, four-, and eight-capillary MCCs have been designed and fabricated to justify the separation ability of these columns. These MCCs capable of multicomponent gas separation provide a sample capacity as large as 200 ng compared to 5.5 ng for 25-$muhbox{m}$-wide SCCs.$hfillhbox{[2007-0309]}$   相似文献   

20.
Three ways to approximate a proximity relation $R$ (i.e., a reflexive and symmetric fuzzy relation) by a $T$ -transitive one where $T$ is a continuous Archimedean $t$-norm are given. The first one aggregates the transitive closure $overline{R}$ of $R$ with a (maximal) $T$-transitive relation $B$ contained in $R$ . The second one computes the closest homotecy of $overline{R}$ or $B$ to better fit their entries with the ones of $R$. The third method uses nonlinear programming techniques to obtain the best approximation with respect to the Euclidean distance for $T$ the $Lstrok$ukasiewicz or the product $t$-norm. The previous methods do not apply for the minimum $t$-norm. An algorithm to approximate a given proximity relation by a ${rm Min}$-transitive relation (a similarity) is given in the last section of the paper.   相似文献   

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