10 Gsample/s optoelectronic A/D converter

A 5 bit, 10 Gsample/s flash A/D converter (ADC) is fabricated for 10 Gbit/s optical receivers. To achieve a 10 Gsample/s rate with wide signal bandwidth, the design focuses on reducing aperture uncertainty, clock skew, and metastability error. The ADC achieves 4.1 effective bits at low input frequencies and 2.8 effective bits at 4.9 GHz input signal at 10 Gsample/s.     

A 4-GS/s 4-bit Flash ADC in 0.18- μm CMOS

A 4-bit noninterleaved flash ADC implemented in 0.18-mum digital CMOS achieves a sampling rate of 4 GS/s. A 32 mum by 32 mum, on-chip differential inductor in each comparator extends the sampling rate without an increase in power consumption. A combination of DAC trimming and comparator redundancy reduces the measured DNL and INL to less than 0.15 LSB and 0.24 LSB, respectively. The measured ENOB with a 100 MHz full-power input is 3.84 bits and 3.48 bits, at 3 GS/s and 4GS/s, respectively. The ADC achieves a bit error rate of less than 10^-11 at 4 GS/s.     

A 6-b 1.3-Gsample/s A/D converter in 0.35-μm CMOS

A 6-b Nyquist A/D converter (ADC) that converts at 1.3 GHz is reported. Using array averaging and a wideband track-and-hold, a 6-b flash ADC achieves better than 5.5 effective bits for input frequencies up to 630 MHz at 1 Gsample/s, and five effective bits for 650-MHz input at 1.3 Gsample/s. Peak INL and DNL are less than 0.35 LSB and 0.2 LSB, respectively. This ADC consumes about 500 mW from 3.3 V at 1Gsample/s. The chip occupies 0.8-mm² active area, fabricated in 0.35-μm CMOS     

A wide input bandwidth 7-bit 300-MSample/s folding and current-mode interpolating ADC

A 7-bit Nyquist folding and interpolating analog-to-digital converter (ADC) that converts at 300 MSamples/s is presented. Using current-mode signal processing techniques for analog preprocessing and a front-end sample-and-hold, the proposed 7-bit folding and interpolating ADC yields a wide input bandwidth up to 60 MHz with six effective number of bits. The ADC consumes 200 mW from a 3.3-V power supply. The chip occupies 1.2 mm/sup 2/ active area, fabricated in 0.35-/spl mu/m CMOS.     

A 1.8-V 22-mW 10-bit 30-MS/s Pipelined CMOS ADC for Low-Power Subsampling Applications

This paper describes a 10-bit 30-MS/s subsampling pipelined analog-to-digital converter (ADC) that is implemented in a 0.18 mum CMOS process. The ADC adopts a power efficient amplifier sharing architecture in which additional switches are introduced to reduce the crosstalk between the two opamp-sharing successive stages. A new configuration is used in the first stage of the ADC to avoid using a dedicated sample-and-hold amplifier (SHA) circuit at the input and to avoid the matching requirement between the first multiplying digital-to-analog converter (MDAC) and flash input signal paths. A symmetrical gate-bootstrapping switch is used as the bottom-sampling switch in the first stage to enhance the sampling linearity. The measured differential and integral nonlinearities of the prototype are less than 0.57 least significant bit (LSB) and 0.8 LSB, respectively, at full sampling rate. The ADC exhibits higher than 9.1 effective number of bits (ENOB) for input frequencies up to 30 MHz, which is the twofold Nyquist rate (fs/2), at 30 MS/s. The ADC consumes 21.6 mW from a 1.8-V power supply and occupies 0.7 mm², which also includes the bandgap and buffer amplifiers. The figure-of-merit (FOM) of this ADC is 0.26 pJ/step.     

A 2.5-V 10-b 120-MSample/s CMOS pipelined ADC based on merged-capacitor switching

This work describes a 10-b multibit-per-stage pipelined CMOS analog-to-digital converter (ADC) incorporating the merged-capacitor switching (MCS) technique. The proposed MCS technique improves the signal processing speed and resolution of the ADC by reducing the required number of unit capacitors by half in comparison to a conventional ADC. The ADC resolution based on the proposed MCS technique can be extended further by employing a commutated feedback-capacitor switching (CFCS) technique. The prototype ADC achieves better than 53-dB signal-to-noise-and-distortion ratio (SNDR) at 120 MSample/s and 54-dB SNDR and 68-dB spurious-free dynamic range (SFDR) for input frequencies up to Nyquist at 100 MSample/s. The measured differential and integral nonlinearities of the prototype are within /spl plusmn/0.40 LSB and /spl plusmn/0.48 LSB, respectively. The ADC fabricated in a 0.25-/spl mu/m CMOS occupies 3.6 mm/sup 2/ of active die area and consumes 208 mW under a 2.5-V power supply.     

A 10-b 150-MSample/s 1.8-V 123-mW CMOS A/D converter with 400-MHz input bandwidth

This work describes a 10-b 150-MSample/s 4-b-per-stage single-channel CMOS pipelined ADC incorporating improved gate-bootstrapping techniques for a wideband SHA and temperature- and supply-insensitive CMOS references. The proposed ADC is designed and fabricated in a 0.18-/spl mu/m one-poly six-metal CMOS technology. The measured differential and integral nonlinearities are within 0.69 LSB and 1.50 LSB, respectively. The prototype ADC shows a peak signal-to-noise-and-distortion ratio (SNDR) of 52 dB at 150 MSample/s. The ADC maintains the SNDR over 52 dB and 43 dB, respectively, for input frequencies up to the Nyquist frequency and 400 MHz at 140 MSample/s. The active die area is 2.2 mm/sup 2/ and the chip consumes 123 mW at 150 MSample/s.     

InP-HBT optoelectronic integrated circuits for photonicanalog-to-digital conversion

A monolithically integrated optical receiver and a 4-bit flash analog-to-digital converter, all in InP HBT technology, have been implemented. The optical receiver converts an incoming optical pulse train into an electronic signal and is functional up to 10 Gsps. The electronic input 4-bit flash ADC achieves 3.8 effective bits at low input frequency and 2.1 effective bits at Nyquist input frequency when sampled at 10 Gsps. A 4-bit version has 2.8 effective bits at low-input frequency and 2.4 effective bits at Nyquist-input frequency when sampled at 10 Gsps. The 4-bit ADC operates up to 18 Gsps where it has 1.7 effective bits at Nyquist-input frequency     

A 69-mW 10-bit 80-MSample/s Pipelined CMOS ADC

A 10-bit 80-MS/s analog-to-digital converter (ADC) with an area- and power-efficient architecture is described. By sharing an amplifier between two successive pipeline stages, a 10-bit pipeline is realized using just four amplifiers with a separate sample-and-hold block. The proposed feedback signal polarity inverting (FSPI) technique addresses the drawback of the conventional amplifier sharing technique. A wide-swing wide-bandwidth telescopic amplifier and an early comparison technique with a constant delay circuit have been developed to further reduce power consumption. The ADC is implemented in a 0.18-/spl mu/m dual-gate-oxidation CMOS process technology, achieves 72.8-dBc spurious free dynamic range, 57.92-dBc signal-to-noise ratio, 9.29 effective number of bits (ENOB) for a 99-MHz input at full sampling rate, and consumes 69 mW from a 3-V supply. The ADC occupies 1.85 mm/sup 2/.     

A gigasample/second 5-b ADC with on-chip track and hold based on anindustrial 1 μm GaAs MESFET E/D process

To enhance the dynamic accuracy of high-speed A/D conversion, a 5-b flash converter with on-chip track and hold circuitry (T&H) was developed. The design is based on TriQuint's commercial 1 μm GaAs E/D MESFET process. Dynamic characterization was performed up to 1 gigasample/second (GS/s). An accuracy of 4.4 effective bits even at 1 GS/s with full Nyquist input was achieved. A comparison showing the accuracy with T&H in operation and in tracking-only mode is given. The outstanding performance is due to a carefully designed and the use of differential source-coupled FET logic (SCFL) in the converter     

A silicon bipolar 4-bit 1-Gsample/s full Nyquist A/D converter

A four-bit silicon bipolar analog-to-digital converter (ADC) which is operational at the full Nyquist input frequency up to 1 Gsample/s (Gs/s) is discussed. The effective bit number at 1 Gs/s reduces to 3.5 bits on Nyquist conditions. The 3-dB large-signal analog bandwidth is 800 MHz and the maximum sampling rate reaches 2 Gs/s and beyond. The converter is built up by stacking of two three-bit subcircuits. The ADC architecture relies on a balanced structure mixing conventional flash-converter elements with analog encoding. Total power consumption is 2.4 W. Standard silicon bipolar technology is used without self-alignment     

An 8-bit 20-MS/s ZCBC Time-Domain Analog-to-Digital Data Converter

An 8-bit 20-MS/s time-domain analog-to-digital data converter (ADC) using the zero-crossing-based circuit technique is presented. Compared with the conventional ADCs, signal processing is executed in both the voltage and time domains. Since no high-gain operational amplifier is needed, this time-domain ADC works well in a low supply voltage. The proposed ADC has been fabricated in a 0.18-mum CMOS process. Its power dissipation is 4.64 mW from a supply voltage of 1.8 V. This active area occupies 1.2 times 0.7 mm². The measured signal-to-noise-distortion ratio achieves 44.2 dB at an input frequency of 10 MHz. The integral nonlinearity is less than plusmn1.07 LSB, and the differential nonlinearity is less than plusmn0.72 LSB. This time-domain ADC achieves the effective bits of 7.1 for a Nyquist input frequency at 20 MS/s.     

An 8-bit 1 GS/s folding and interpolating ADC with a base-4 architecture

A base-4 architecture for folding and interpolating ADC is proposed. It employs cascaded folding and interpolating topology with both the folding factors and interpolating factors of 4. Duo to that the base-4 folding and interpolating has an intrinsic relationship with the quantization process which is base-2, the architecture requires only 2 × N + 6 comparators for an N-bit ADC. What’s more, the coarse flash ADC can be eliminated because all the most significant bits can be conveniently extracted from the intermediate signals as the “byproduct” of the folding amplifiers. In addition, the base-4 architecture can be extended to higher resolution easily because of the modularized and unified configuration. This architecture is implemented with a 1 GS/s 8-bit ADC in 0.35 μm SiGe BiCMOS process. Measurement results reveal the chip exhibits DNL of 0.30/?0.26 LSB and INL of 0.80/?0.80 LSB. The ENOB is 6.9 LSB at 10.1 MHz input. The SNDR is above 42 dB over the first and the second Nyquist zone. The SFDR is above 45 dB over the first Nyquist zone and the second Nyquist zone. The ERBW is over 1.2 GHz.     

A 10-bit 80-MS/s opamp-sharing pipelined ADC with a switch-embedded dual-input MDAC

A 10-bit 80-MS/s opamp-sharing pipelined ADC is implemented in a 0.18-μm CMOS.An opampsharing MDAC with a switch-embedded dual-input opamp is proposed to eliminate the non-resetting and successive-stage crosstalk problems observed in the conventional opamp-sharing technique.The ADC achieves a peak SNDR of 60.1 dB(ENOB = 9.69 bits) and a peak SFDR of 76 dB,while maintaining more than 9.6 ENOB for the full Nyquist input bandwidth.The core area of the ADC is 1.1 mm~2 and the chip consumes 28 mW with a 1.8 V power supply.     

A 4 GS/s 4 bit ADC with 3.8 GHz analog bandwidth in GaAs HBT technology

An ultra-wideband 4 GS/s 4 bit analog-to-digital converter(ADC)which is fabricated in 2-level interconnect, 1.4μm InGaP/GaAs HBT technology is presented.The ADC has a-3 dB analog bandwidth of 3.8 GHz and an effective resolution bandwidth(ERBW)of 2.6 GHz.The ADC adopts folding-interpolating architecture to minimize its size and complexity.A novel bit synchronization circuit is used in the coarse quantizer to eliminate the glitch codes of the ADC.The measurement results show that the chip achieves larger than 3.4 ENOBs with an input frequency band of DC-2.6 GHz and larger than 3.0 ENOBs within DC-4GHz at 4 GS/s.It has 3.49 ENOBs when increasing input power by 4 dB at 6.001 GHz of input.That indicates that the ADC has the ability of sampling signals from 1st to 3rd Nyquist zones(DC-6 GHz).The measured DNL and INL are both less than±0.15 LSB. The ADC consumes power of 1.98 W and occupies a total area of 1.45×1.45 mm~2.     

A 20 GS/s 5-Bit SiGe BiCMOS Dual-Nyquist Flash ADC With Sampling Capability up to 35 GS/s Featuring Offset Corrected Exclusive-Or Comparators

The design and wafer probe test results of a 5-bit SiGe Flash ADC are presented. The integrated circuit, fabricated in a 200/250 GHz ${rm f}_{rm T}/{rm F}_{max}$, SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with dual Nyquist operation at sample frequencies up to 20 GHz. Sampling clock rates are demonstrated as high as 35 GS/s. The ADC makes use of a comparator with an integrated exclusive-or function to reduce power consumption. The device also generates two half-rate interleaved outputs to ease data capture with laboratory equipment. An effective number of bits (ENOB) of nearly 5.0 is achieved for low-frequency input tones, dropping to 4.0 at 10 GHz.      

A Programmable 0.8-V 10-bit 60-MS/s 19.2-mW 0.13-$mu$ m CMOS ADC Operating Down to 0.5 V

This work describes a programmable 10- to 100-MS/s, low-power 10-bit two-step pipeline analog-digital converter (ADC) operating at a power supply from 0.5- to 1.2-V. MOS transistors with a low-threshold voltage are employed partially in the input sampling switches and differential pair of the SHA and MDAC for a proper signal swing margin at a 0.5-V supply. The integrated adjustable current reference optimizes the static and dynamic performance of amplifiers at 10-bit accuracy with a wide range of supply voltages. A signal-isolated layout improves the capacitor mismatch of the multiplying digital-to-analog converter, while a switched- bias power-reduction technique reduces the power dissipation of comparators in the flash ADCs. The prototype ADC in a 0.13-mum CMOS process demonstrates the measured differential nonlin- earity and integral nonlinearity within 0.35 and 0.49 least significant bits. The ADC, with an active die area of 0.98 mm², shows a maximum signal-to-noise distortion ratio and spurious free dynamic range of 56.0 and 69.6 dB, respectively, and a power consumption of 19.2 mW at a nominal condition of 0.8 V and 60 MS/s.     

A 6-bit 3.5-GS/s 0.9-V 98-mW Flash ADC in 90-nm CMOS

A 6-bit 3.5-GS/s flash ADC is reported. A load circuit with a clamp diode and a replica-biasing scheme is developed for low-voltage and high-speed operation. An acceleration capacitor is introduced for high-speed overdrive recovery of a comparator. An averaging and interpolation network is employed in this ADC. The interpolation factor is optimized considering random offset, active area, and systematic offset to realize low offset and small active area. The ADC is fabricated in a 90-nm CMOS process and occupies 0.15 mm². It consumes 98 mW with a 0.9-V power supply. With Nyquist input, SNDR and SFDR at 3.5 GS/s are 31.18 dB and 38.67 dB, respectively.     

A dual 4-bit 2-Gs/s full Nyquist analog-to-digital converter usinga 70-ps silicon bipolar technology with borosenic-poly process andcoupling-base implant

A dual 4-b analog-to-digital converter (ADC) with Nyquist operation to 2 gigasamples/second (Gs/s) and -29-dBc distortion at 1 GHz is presented. A novel evaluation method using an integral digital-to-analog converter is introduced. A trench-isolated, self-aligned, double-polysilicon bipolar process is used for the chip fabrication. This ADC has a resolution of 3.73 effective bits at 1-GHz analog input signal, without the use of a preceding sample-and-hold. Low-frequency untrimmed distortion is -48 dBc (not including quantizing error), and is independent of the sample rate of 2 Gs/s     

An 11b 70-MHz 1.2-mm/sup 2/ 49-mW 0.18-/spl mu/m CMOS ADC with on-chip current/voltage references

This work proposes an 11b 70-MHz CMOS pipelined analog-digital converter (ADC) as one of core circuit blocks for very high speed digital subscriber line system applications. The proposed ADC for the internal use has the strictly limited number of externally connected I/O pins while the ADC employs on-chip CMOS current/voltage references and a merged-capacitor switching technique to improve ADC performances. The ADC implemented in a 0.18-/spl mu/m 1P4M CMOS technology shows the maximum signal-to-noise distortion ratio (SNDR) of 60 dB at 70 MSample/s. The ADC maintains the SNDR of 58 dB and the spurious-free dynamic resistance of 68 dB for input frequencies up to the Nyquist rate at 60 MSample/s. The measured differential and integral nonlinearities of the ADC are within /spl plusmn/0.63 and /spl plusmn/1.21 LSB, respectively. The active chip area is 1.2 mm/sup 2/ and the ADC consumes 49 mW at 70 MSample/s at 1.8 V.