A physicochemical study of the Sb<Subscript>2</Subscript>Se<Subscript>3</Subscript>–Nd<Subscript>2</Subscript>Se<Subscript>3</Subscript> system

We have studied phase relations in the Sb₂Se₃–Nd₂Se₃ system and mapped out its T–x phase diagram using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements. The system contains one compound, with the composition NdSbSe₃, which melts incongruently at 865 K and crystallizes in orthorhombic symmetry with the following lattice parameters: а = 12.77(1) Å, b = 14.08(1) Å, and c = 5.82(5) Å (Z = 8, ρ_meas = 6.20 g/cm³, ρ_x = 6.38 g/cm³). At room temperature, the Nd₂Se₃ solubility in Sb₂Se₃ is 5 mol % and the Sb₂Se₃ solubility in Nd₂Se₃ is 2.5 mol %. The Sb₂Se₃–Nd₂Se₃ system has a eutectic located at 15 mol % Nd₂Se₃, with a melting point at 755 K. The electrical conductivity and thermoelectric power of the (Sb₂Se₃)_1–x (Nd₂Se₃) _x solid solutions have been measured as functions of temperature.     

Phase equilibria in the Tl<Subscript>2</Subscript>Te–Tl<Subscript>5</Subscript>Te<Subscript>3</Subscript>–Tl<Subscript>9</Subscript>TbTe<Subscript>6</Subscript> system

The Tl₂Te–Tl₅Te₃–Tl₉TbTe₆ system has been studied using differential thermal analysis, X-ray diffraction, and microhardness measurements. We have mapped out a number of vertical sections, the 680 K isothermal section of its phase diagram, and projections of its polythermal projections of its liquidus and solidus surfaces. The field of solid solutions with the Tl₅Te₃ structure (δ-phase) has been shown to account for more than 90% of the area of the composition triangle. Tl₂Te-based solid solutions (α-phase) exist in a narrow composition region.     

Characterization of microstructure and properties of Al–Al<Subscript>3</Subscript>Zr–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composite

Aluminium-based metal matrix composite strengthened by in situ Al₂O₃ and Al₃Zr particles were synthesized by powder metallurgy route. Phase analysis by X-ray diffraction and scanning electron microscopy revealed that the reaction between Al and ZrO₂ produced Al₂O₃ and Al₃Zr phases in the sintered composites. The hardness of the composite is a strong function of sintering temperature as well as the volume fraction of reinforcements. The dry sliding wear test results clearly indicated that increasing the volume fraction of zirconia particles in the composite improved the wear resistance. Microcutting, ploughing, delamination and oxidation were the main mechanisms of wear.     

Phase equilibria in the Tl<Subscript>5</Subscript>Te<Subscript>3</Subscript>–Tl<Subscript>9</Subscript>BiTe<Subscript>6</Subscript>–Tl<Subscript>9</Subscript>TbTe<Subscript>6</Subscript> system

Phase equilibria in the Tl₅Te₃–Tl₉BiTe₆–Tl₉TbTe₆ system have been studied using differential thermal analysis, X-ray diffraction, and microhardness measurements. We have mapped out a number of vertical sections, the 760-K isothermal section of its phase diagram, and projections of its liquidus and solidus surfaces. The composition dependences of lattice parameters and microhardness have been obtained. The system has been shown to contain a continuous series of solid solutions, which crystallize in a tetragonal structure (Tl₅Te₃ type, sp. gr. I4/mcm).     

Structure and properties of CaF<Subscript>2</Subscript>–B<Subscript>2</Subscript>O<Subscript>3</Subscript> glasses

FTIR spectroscopy has been employed to investigate the structure of CaF₂–B₂O₃ glasses. It is proposed that CaF₂ partially modifies the borate network forming \textCa _{1 / 2} ²⁺ [\textBO _{3 / 2} \textF] ^- {\text{Ca}}_{ 1 / 2}^{ 2+ } [{\text{BO}}_{ 3 / 2} {\text{F]}}^{ - } units. The rest of CaF₂ is assumed to build an amorphous network formed of CaF₄ tetrahedra. Analysis of density and molar volume revealed that the volume of CaF₄ tetrahedron in the studied glasses is slightly greater than that in the crystalline form. Data of density, molar volume, and electric conductivity have been correlated with the glass structure. As far as the authors know, CaF₂–B₂O₃ glasses are investigated for the first time.     

Cathodoluminescence properties of SiO<Subscript>2</Subscript>:Pr<Superscript>3+</Superscript>and ZnO·SiO<Subscript>2</Subscript>:Pr<Superscript>3+</Superscript> phosphor nanopowders

The successful incorporation of ZnO nanoparticles in Pr³⁺-doped SiO₂ using a sol–gel process is reported. SiO₂:Pr³⁺ gels, with or without ZnO nanoparticles, were dried at room temperature and annealed at 600 °C. On the basis of the X-ray Diffraction (XRD) results, the SiO₂ was amorphous regardless of the incorporation of Pr³⁺ and nanocrystalline ZnO or annealing at 600 °C. The particles were mostly spherical and agglomerated as confirmed by Field Emission Scanning Electron Microscopy. Thermogravimetric analysis of dried gels performed in an N₂ atmosphere indicated that stable phases were formed at ≥900 °C. Absorption bands ascribed to ³H₄-³P_{(J = 0,1,2)}, ¹I₆ and ¹D₂ in the UV–VIS region were observed from SiO₂:Pr³⁺ colloids. The red cathodoluminescent (CL) emission corresponding to the ³P₀ → ³H₆ transition of Pr³⁺ was observed at 614 nm from dried and annealed SiO₂:Pr³⁺ powder samples. This emission was increased considerably when ZnO nanoparticles were incorporated. The CL intensity was measured at an accelerating voltage of 1-5 keV and a fixed beam current of 8.5 μA. The effects of accelerating voltage on the CL intensity and the CL degradation of SiO₂:Pr³⁺ and ZnO·SiO₂:Pr³⁺ were also investigated using Auger electron spectroscopy coupled with an Ocean Optics S2000 spectrometer.     

Compositional dependence of the structural and dielectric properties of Li<Subscript>2</Subscript>O–GeO<Subscript>2</Subscript>–ZnO–Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> glasses

(10Li₂O–20GeO₂–30ZnO–(40-x)Bi₂O₃–xFe₂O₃ where x = 0.0, 3, 6, and 9 mol%) glasses were prepared. A number of studies, viz. density, differential thermal analysis, FT-IR spectra, DC and AC conductivities, and dielectric properties (constant ε′, loss tan δ, AC conductivity, σ _ac, over a wide range of frequency and temperature) of these glasses were carried out as a function of iron ion concentration. The analysis of the results indicate that, the density and molar volume decrease with an increasing of iron content indicates structural changes of the glass matrix. The glass transition temperature T _g and onset of crystallization temperature T _x increase with the variation of concentration of Fe₂O₃ referred to the growth in the network connectivity in this concentration range, while glass-forming ability parameter ΔT decrease with increase Fe₂O₃ content, indicates an increasing concentration of iron ions that take part in the network-modifying positions. The FT-IR spectra evidenced that the main structural units are BiO₃, BiO₆, ZnO₄, GeO₄, and GeO₆. The structural changes observed by varying the Fe₂O₃ content in these glasses and evidenced by FTIR investigation suggest that the iron ions play a network modifier role in these glasses while Bi₂O₃, GeO₂, and ZnO play the role of network formers. The temperature dependence of DC and AC conductivities at different frequencies was analyzed using Mott’s small polaron hopping model and, the high temperature activation energies have been estimated and discussed. The dielectric constant and dielectric loss increased with increase in temperature and Fe₂O₃ content.     

Phase Equilibria in the Cu<Subscript>2</Subscript>Se–Cu<Subscript>3</Subscript>AsSe<Subscript>4</Subscript>–Se System and Thermodynamic Properties of Cu<Subscript>3</Subscript>AsSe<Subscript>4</Subscript>

The Cu₂Se–Cu₃AsSe₄–Se system has been studied using differential thermal analysis, X-ray diffraction, and emf measurements on concentration cells using Cu₄RbCl₃I₂ as a solid electrolyte. We have constructed a number of vertical sections through the phase diagram, the room-temperature solid-state phase compatibility diagram, and a projection of the liquidus surface. The primary crystallization fields of the phases present and the types and coordinates of in- and univariant equilibria in the system have been identified. The system has been shown to contain a broad liquid–liquid immiscibility region. Using emf data, we evaluated the standard thermodynamic functions of formation and standard entropy of the Cu₃AsSe₄ compound.     

Preparation,structure and microwave dielectric properties of 3MgO–Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–3TiO<Subscript>2</Subscript> ceramics

3MgO–Al₂O₃–3TiO₂ (MAT) ceramics were prepared by a conventional solid-state reaction method. The crystal structure, sintering behavior and microwave dielectric properties of ceramics were investigated using X-ray diffraction, scanning electron microscopy and network analyzer. MAT ceramics contained the coexistence of three phases, including MgAl₂O₄, MgTiO₃ and MgTi₂O₅. The ceramics sintered at 1350 °C for 4 h presented excellent comprehensive performances with relative permittivity (ε _r ) of 15.4, quality factor (Q × f) of 91,000 GHz and temperature coefficient of resonant frequency (τ _f ) about ?55.1 ppm/°C.     

Mechanical and acid-etching properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–ZnO–B<Subscript>2</Subscript>O<Subscript>3</Subscript> glass-containing ceramic fillers

The properties of the composite, having a complicated microstructure, are decided by many factors such as those of glass matrix, crystal phases, fillers, and holes. We investigated how the addition of ceramic fillers to the glass matrix affects the mechanical and etching properties of the glass composite by forming new crystal phases. Different amounts of two fillers, ZnO and Al₂O₃, were added to a glass frit consisting of Bi₂O₃–ZnO–B₂O₃. It was sintered at 550 °C for 30 min. Based on the results of this study, the porosity and degree of crystallization of the composites could be controlled by adjusting the content of the ZnO and Al₂O₃ fillers. Therefore, porosity and degree of crystallization formed by the reaction between a glass matrix and fillers influence the mechanical and etching properties of the composite.     

Phase equilibria and thermodynamic properties of saturated solid solutions based on the compounds BiSeI,Bi<Subscript>19</Subscript>Se<Subscript>27</Subscript>I<Subscript>3</Subscript>, and BiI<Subscript>3</Subscript> in the Ag–Bi–Se–I system

We have studied phase relations in the AgI–BiI₃–Se–Bi₂Se₃ region of the Ag–Bi–Se–I system for T ≤ 530 K and derived equations of overall potential-forming reactions involving the phases BiSeI, Bi₁₉Se₂₇I₃, and BiI₃. The reactions were brought about in electrochemical cells of the form C |Ag| Ag₃GeS₃I glass |D| C (where C stands for an inert (graphite) electrode, Ag and D denote the electrodes of the cell, D is a mechanical mixture of four phases in the system under investigation, and Ag₃GeS₃I glass is a membrane with purely ionic (Ag⁺) conductivity). The linear temperature dependences of EMF for the cells in the range 485–510 K were used to calculate the standard thermodynamic functions of the compounds BiSeI, Bi₁₉Se₂₇I₃, and BiI₃.     

Influence of Bi substitution on microwave dielectric properties of BaO–La<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sm<Subscript>2</Subscript>O<Subscript>3</Subscript>–TiO<Subscript>2</Subscript> ceramics

The influences of Bi substitution on microwave dielectric properties of Ba₄(La_0.5Sm_0.5)_9.33Ti₁₈O₅₄ solid solutions were investigated. Dielectric ceramics with general formula Ba₄(La_(0.5−z)Sm_0.5Bi _z )_9.33Ti₁₈O₅₄, z = 0.0–0.2 were prepared by conventional solid state route. The structural analysis of all the samples was carried out by X-ray diffraction and scanning electron microscopy. The dielectric properties were investigated as a function of Bi contents using open-ended coaxial probe method in the frequency range 0.3–3.0 GHz at room temperature. Dielectric constant varies from 83 to 88 and loss tangent from 2.1 × 10⁻³ to 5.5 × 10⁻³ at 3 GHz with temperature coefficient of resonant frequency changing from 106.7 to −8.4 ppm/oC as Bi contents increases from z = 0.00–0.20. It has been found that dielectric constant and temperature coefficient of resonant frequency improve whereas loss tangent is adversely affected with increase in Bi substitution.     

Electrical properties of In<Subscript>2</Subscript>Se<Subscript>3</Subscript>〈Mn〉 and InSe〈Mn〉 crystals

We have studied the crystal structure and electrical properties of In2Se₃〈Mn〉(1 wt % Mn) and InSe〈Mn〉 (0.5 wt % Mn) crystals. The results indicate the formation of substitutional solid solutions in the crystals. The electrical conductivity of the doped indium selenides was measured across (σ_⊥C ) and along (σ_‖C ) the crystallographic axis C in the range 80–400 K, and temperature-dependent conductivity anisotropy (σ_⊥C /σ_‖C ) data were used to evaluate the energy barrier height between the layers in the crystals.     

Improving compressibility and thermal properties of Al–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposites using Mg particles

This work presents an efficient technique to improve compressibility and thermal properties of Al–Al₂O₃ nanocomposites. The compressibility behavior was examined by cold compaction test, and the thermal conductivity was calculated through the measured electrical resistivity of the prepared samples. The results showed that the addition of Al₂O₃ to Al matrix improves the compressibility behavior of the produced nanocomposite. However, it has a negative effect on the thermal conductivity of the produced composite. Adding Al₂O₃ hard particles accelerates the fracturing process which improves the compressibility behavior. However, it causes some agglomeration at the grain boundaries which reduce the thermal conductivity. The addition of Mg to Al–Al₂O₃ nanocomposite improves both the compressibility behavior and the thermal conductivity. This is due to the great reduction in the particle size and the agglomeration of reinforcement particles on the grain boundaries which improve the compressibility behavior and the thermal conductivity.     

Structural and electrical properties of Bi<Subscript>1/2</Subscript>Na<Subscript>1/2</Subscript>TiO<Subscript>3</Subscript>–BaTiO<Subscript>3</Subscript>–Sr<Subscript>3</Subscript>CuNb<Subscript>2</Subscript>O<Subscript>9</Subscript> lead-free piezoelectric ceramics

The structure, microstructure, field-induced strain, ferroelectric, piezoelectric and dielectric properties of (1 ? x) (Bi_0.5Na_0.5)_0.935Ba_0.065TiO₃–xSr₃CuNb₂O₉ (BNT-BT6.5–xSCN, with x = 0, 0.003, 0.006, 0.009) ceramics were investigated. X-ray diffraction patterns show that all samples are pure perovskite structure and Sr₃CuNb₂O₉ (SCN) effectively diffused into the 0.935Bi_0.5Na_0.5TiO₃–0.065BaTiO₃ (BNT–BT6.5) solid solution which also reflected in the Raman spectra and the energy disperse spectroscopy (EDS) analysis. With the increases of SCN content, the coercive field (E _c  = 18.41 kV/cm) decreases greatly, whereas the remnant polarization (P _r  = 29.11 μC/cm²) increases a little at x = 0.003 which is showed in the polarization hysteresis (P–E) loops, the result indicate that the ferroelectric order would be disrupted. Around critical composition (x = 0.003) at a driving field of 60 kV/cm, a large unipolar strain of 0.29 % with a normalized strain (d ₃₃ ^*  = 483 pm/V) is obtained at room temperature. The results indicate that BNT-BT6.5-xSCN ceramics with excellent properties are promising to replace lead-based piezoelectric ceramics and can be used in practical applications.     

CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>–GaSe system

The phase relations in the CaGa₂S₄–GaSe system have been studied using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and its T–x phase diagram has been mapped out. The CaGa₂S₄–GaSe system has been shown to be a pseudobinary join of the ternary system Ca–Ga–Se. The CaGa₂S₄–GaSe system has been found to contain limited solid solutions based on the constituent selenides. The electrical conductivity of CaGa₂S₄ has been measured and its current–light behavior and photoelectric properties have been studied.     

Optical properties and crystallization of glasses in the system Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–MoO<Subscript>3</Subscript>–B<Subscript>2</Subscript>O<Subscript>3</Subscript>

The purpose of this work is to study the optical properties and crystallization of glasses in the ternary system Bi₂O₃–MoO₃–B₂O₃. In order to verify the obtaining of bismuth borate crystal phases several glass compositions have been selected for crystallization. The obtained samples were characterized by X-ray diffraction, scanning electron microscopy and UV–Vis spectroscopy. The UV–Vis spectroscopy showed that the obtained glasses are transparent in the visible region. The values of optical band gap (E _opt) and changes in cut-off (λ_c) depending on composition are reported. It was established that the increase in the MoO₃ content led to decreasing the transmittance of the glasses. Moreover, the absorption edge shifts towards longer wavelength.     

Effect of sintering temperatures on properties of BaO–B<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> glass/silica composites for CBGA package

BaO–B₂O₃–SiO₂–Al₂O₃ (BBSA) glass/silica composites synthesized by solid-state reaction method were developed for CBGA packages, and the effects of sintering temperature (900–950 °C) on the phase transformation, microstructure, thermal, mechanical and electrical properties were investigated. XRD results show that the major phases quartz and cristobalite, and the minor phase BaSi₂O₅ are detected in BBSA composites. Furthermore, it was found that the quartz phase transforms to cristobalite phase at 930–940 °C. The formation of cristobalite phase with higher coefficient of thermal expansion (CTE) led to the increase of CTE value of BBSA composites. However, excessive cristobalite phase content would degrade the mechanical properties and the linearity of thermal expansion of the ceramics. BBSA composites sintered at 920 °C exhibited excellent properties: low dielectric constant and loss (ε_r = 6.2, tanδ = 10^?4 at 1 MHz), high bending strength (179 MPa), high CTE (12.19 ppm/°C) as well as superior linearity of the thermal expansion.     

Growth and properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and SiO<Subscript>2</Subscript> nanolayers on III–V semiconductors

We describe atomic layer deposition of silica and alumina layers on GaAs, InAs, and InSb substrates. The conditions for layer-by-layer growth of surface nanostructures are established, and some of their dielectric parameters are evaluated.