Structural,electrical and magneto-electric characteristics of complex multiferroic perovskite Bi<Subscript>0.5</Subscript>Pb<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Ce<Subscript>0.5</Subscript>O<Subscript>3</Subscript>

The polycrystalline sample of bismuth based-complex multiferroic of a composition Bi_0.5Pb_0.5Fe_0.5Ce_0.5O₃ was prepared by a high-temperature solid-state reaction technique (calcinations temperature = 900 °C, sintering temperature = 960 °C, time = 4 h). Preliminary structural analysis using XRD data exhibits the formation of a single-phase compound. Studies of surface morphology of the ceramic sample of the compound, recorded at room temperature using a scanning electron microscope, show uniform distribution of grains of different size with few voids. Detailed studies of dielectric properties (ε_r, tan δ) supported the existence of multiferroic properties in the above complex system. The analysis of impedance parameters, recorded in a wide frequency (1 kHz–1 MHz) and temperature (room temperature to 450 °C) range of the material provide better understanding of (a) role of grains and grain boundaries in resistive and capacitative characteristics, (c) structure-properties relationship and (b) type of relaxation process occurred in the material. Study of temperature dependence of dc conductivity of the compound shows the existence of negative temperature coefficient of resistance in it. The nature of variation of ac conductivity with temperature of the material follows the Josher’s universal power law. Study of magneto-electric characteristics of the sample at room temperature has provided many useful and new data on magneto-electric coupling coefficient of different orders.     

Structural,dielectric and impedance spectroscopy studies of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)(Zr<Subscript>0.025</Subscript>Ti<Subscript>0.975</Subscript>)O<Subscript>3</Subscript> ceramic

Structural, vibrational, dielectric and electrical properties of (Na_0.5Bi_0.5)(Zr_0.025Ti_0.975)O₃ ceramic synthesized by the solid-state reaction technique have been carried out. The X-ray diffraction analysis was indicated as a pure perovskite phase in the rhombohedral structure. The modes of rhombohedral vibrations were appeared in the experimental Raman spectrum at room temperature. The dielectric and electrical properties of the material were investigated by impedance spectroscopy analysis for a broad range of temperatures (50–560 °C) and frequency domain of 10²?10⁶ Hz. The dielectric measurement exhibit two phase transitions: a ferro-antiferroelectric transition followed by an antiferro-paraelectric transition at higher temperatures. Complex impedance analysis was carried out in order to distinct the contribution of the grains and the grain boundaries to the total electrical conduction. The Nyquist plot was proved to be a non-Debye relaxation mechanism. The combined spectroscopic plots of the imaginary part of electric impedance and modulus confirmed the non-Debye type behavior. The frequency dependent ac conductivity obeys the double power law behavior and shows three types of conduction process. The significant decrease of dc conductivity spectrum followed the Arrhenius relationship. The values of calculated activation energy of the compound implied that the electrical conduction is mostly due the high oxygen mobility.     

Investigation of density of states and electrical properties of Ba<Subscript>0.5</Subscript>Co<Subscript>0.5</Subscript>Bi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> nanoceramics prepared by chemical route

Barium-cobalt-bismuth-niobate, Ba_0.5Co_0.5Bi₂Nb₂O₉ (BCoBN) nanocrystalline ferroelectric ceramic was prepared through chemical route. XRD analysis showed single phase layered perovskite structure of BCoBN when calcined at 650 °C, 2 h. The average crystallite size was found to be 18 nm. The microstructure was studied through scanning electron microscopy. The dielectric and ferroelectric properties were investigated in the temperature range 50–500 °C. The dielectric constant and dielectric loss plot with respect to temperature both indicated strong relaxor behavior. Frequency versus complex impedance plot also supported the relaxor properties of the material. The impedance spectroscopy study showed only grain conductivity. Variation of ac conductivity study exhibited Arrhenius type of electrical conductivity where the hopping frequency shifted towards higher frequency region with increasing temperature. The ac conductivity values were used to evaluate the density of state at the Fermi level. The minimum hopping distance was found to be decreased with increasing temperature.     

Dielectric and impedance spectroscopy of Ni doped BiFeO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> electronic system

A nickel modified BiFeO₃–BaTiO₃ electronic system has been fabricated by using a high-temperature solid-state reaction process. Preliminary X-ray structural analysis has confirmed the formation of a single-phase material in the orthorhombic crystal system. The dielectric and impedance characteristics of the prepared material have been studied in a wide range of frequency (1 kHz-1 MHz) at different temperatures (25–500 °C) for the better understanding of the frequency-temperature dependence of its capacitive and resistive behavior respectively. A significant effect of grains and grain boundaries of the resistive characteristics of the material is observed at high temperatures. The electrical conductivity of the material increases with increase in frequency in the low-temperature region. Preliminary study of a small amount of Ni doping in the above binary system (i.e., BiFeO₃–BaTiO₃) has provided many interesting results which may be useful for the fabrication of an electronic device.     

Frequency dependence of dielectric properties of ex situ MgB<Subscript>2</Subscript> bulks

In this study, frequency dependent electrical properties of ex situ polycrystalline MgB₂ sintered at 650–850?°C were investigated. Dielectric permittivity (ε′, ε″), dielectric loss (tan δ), alternating current (AC) conductivity (σ_ac) as a function of frequency (100 Hz–10 MHz) were measured at room temperature. The X-ray diffraction (XRD) and grain morphology were analysed and correlated to the findings in dielectric properties. Due to weakly coupled grains and presence of high fraction of oxides, positive real dielectric permittivity was measured for the ex situ samples as compared with the negative real dielectric permittivity shown by the in situ MgB₂. Nevertheless, the samples sintered at higher temperature showed improved grain connectivity as reflected by the higher AC conductivity and dielectric loss. The semicircle observed in the complex impedance plots together with the combined spectroscopy plots indicates that the electrical behavior of the ex situ samples is mainly due to the bulk and grain boundary responses as opposed to the sole bulk response of the in situ MgB₂. The modelled equivalent circuit also suggests the presence of insulating grain boundary barrier (due to the oxide phases) next to the conducting bulk in the ex situ samples.     

Investigation of charge transport mechanism in semiconducting La<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>Mn<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>O<Subscript>3</Subscript> manganite prepared by sol–gel method

Here in, we report the charge transport mechanism in semiconducting La_0.5Ca_0.5Mn_0.5Fe_0.5O₃ (LCMFO) polycrystalline material synthesized via sol–gel auto combustion route. X-ray diffraction (XRD) analysis confirmed the orthorhombic phase of the prepared material. Temperature dependent resistivity and impedance spectroscopy measurements have been carried out to probe the dielectric and electrical conduction mechanism which revealed a change of Mott variable range to the small polaronic hopping conduction mechanism around 303 K. The complex impedance and modulus spectra undoubtedly showed the contribution of both grain and grain boundary effect on the conduction properties of LCMFO. An equivalent circuit [(R_gbQ_gb) (R_gQ_g)] model has been used to address the electrical parameters associated with the different phases (grains and grain boundaries) having different relaxation times. The values of resistances of two phases obtained after fitting the equivalent circuit in the nyquist plot have been analyzed which confirmed the change of conduction mechanism around 303 K. The resultant change in conduction mechanism is also supported by the conductivity plots.     

Dielectric responses of Na<Subscript>0.65</Subscript>Bi<Subscript>0.45</Subscript>Cu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics based on the composition design of changing the Na/Bi ratio

Na_0.65Bi_0.45Cu₃Ti₄O₁₂ ceramics were successful prepared by the conventional solid-state reaction technique. Compared to Na_0.50Bi_0.50Cu₃Ti₄O₁₂ (NBCTO), the composition of Na_0.65Bi_0.45Cu₃Ti₄O₁₂ was designed in terms of changing the Na/Bi ratio. Colossal dielectric permittivity of ~1.2 × 10⁴ at 1 kHz was obtained in Na_0.65Bi_0.45Cu₃Ti₄O₁₂ ceramics. Interestingly, three frequency dispersions were observed in the frequency dependence of dielectric constant measured at different temperatures. The investigation of electric modulus displayed that the giant low-frequency dielectric constant was attributed to Maxwell–Wagner polarization at the grain boundaries and the frequency dispersion in middle-frequency range was due to the grain polarization. Except grain response and grain boundaries response reflected by two semicircles in the impedance spectroscopy, another electrical response associated with nonzero high frequency intercept was found. The grain resistance Rg and grain boundaries resistance R _gb was ~600 Ω and 3.9 × 10⁵ Ω, respectively. The large intrinsic permittivity as high as ~700 was obtained. Furthermore, two dielectric anomalies observed in the temperature dependent of dielectric constant were discussed in detail. The results indicated change in the Na/Bi ratio had a significant effect on the electrical properties of NBCTO ceramics.     

Electrical hetero-structure of Nd0.1Sr0.9TiO3 ceramic for energy storage applications

Both high dielectric constant and high bulk resistance was required to meet high energy storage density in high-voltage ceramic capacitors. In this paper, Nd_0.1Sr_0.9TiO₃ (NSTO) ceramic with pure tetragonal perovskite structure was prepared by solid state reaction route. Dielectric response of NSTO ceramic was investigated in the temperature range of ?60 to 550 °C over the frequency 20 Hz–1 MHz. Complex impedance spectroscopy (IS) analysis was employed to study the electrical conductive behavior of NSTO ceramic. IS results revealed that the NSTO ceramic showing electrical hetero-structure, which includes semiconducting grains, inter-grains and insulating grain boundaries. The space charge polarization at heterointerfaces by conductive charge carries was contributed to high dielectric constant, while insulating grain boundaries to high bulk resistance for NSTO ceramic. The mechanism of such electrical hetero-structure formation associated with charge compensation induced by trivalent Nd ions substitution for divalent Sr, as well as the first and second ionization of oxygen vacancies was discussed tentatively.     

Structural,microstructural and dielectric properties of nanostructured mechanically alloyed polycrystalline Bismuth Ferrite (BiFeO<Subscript>3</Subscript>)

This paper reports the synthesis and characterization of polycrystalline Bismuth Ferrite (BiFeO₃) by high energy ball milling method (HEBM). Bismuth ferrite was mechanically alloyed in a hardened steel vial for 6 h and subsequent molding; the pellet samples went through multi-sample sintering, where the samples were sintered from 425 to 775?°C with 50?°C increments. The phase characterization by X-ray diffraction (XRD) revealed that all the major peaks were of rhombohedral distorted perovskite structure with R3c space group. The XRD patterns showed an improvement of crystallinity with increasing sintering temperature. The morphology of the samples was studied using FESEM showed larger grain size as the sintering temperature increased, consequently increasing the multi-domain grains. The dielectric constant and dielectric loss were observed to increase corresponded to increases in grain size and are mainly due to easier domain wall movement. The capacitance values were observed to be increased when the grain size increases due to increase in sintering temperature.     

Optimized sintering properties and temperature stability of MgZrTa<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics with CuO addition for microwave application

Microwave dielectric ceramics CuO–modified MgZrTa₂O₈ were synthesized by the conventional solid-state reaction method. The effects of CuO additives on the sintering characteristics and microwave dielectric properties have been investigated. With CuO addition, the sintering temperature of MgZrTa₂O₈ ceramics can be effectively lowered from 1475 to 1375 °C without decreasing its dielectric properties obviously and the temperature coefficient of the resonant frequency of MgZrTa₂O₈ ceramics have been optimized to near-zero. The crystalline phase exhibited a wolframite crystal structure and no second phase was detected at low addition levels. The grain growth of CuO–modified MgZrTa₂O₈ ceramics was accelerated due to liquid phase effect. The relative dielectric constants (ε_r) were correlated with apparent density and were not significantly different for all levels of CuO concentration. The quality factors (Q?×??) and temperature coefficient of resonant frequency (τ_?), which were strongly dependent on the CuO concentration, were analyzed by the grain size and the dielectric constant respectively. A best Q?×?? value of 116400 GHz and τ_? value of ?6.19 ppm/℃ were obtained for specimen with 0.05 wt% CuO addition at 1375 °C.     

Structural,dielectric and electrical properties of CaBa<Subscript>4</Subscript>SmTi<Subscript>3</Subscript>Nb<Subscript>7</Subscript>O<Subscript>30</Subscript> ferroelectric ceramic

The polycrystalline sample of CaBa₄SmTi₃Nb₇O₃₀, a member of tungsten bronze family, was prepared by solid-state reaction method. X-ray diffraction analysis shows the formation of single-phase compound with an orthorhombic structure at room temperature. Scanning electron micrograph of the material shows uniform distribution of grains. Detailed studies of dielectric properties of the compound as a function of temperature at different frequencies suggest that the compound has a dielectric anomaly of ferroelectric to paraelectric type at 198°C, and exhibits non-relaxor kind of diffuse phase transition. The ferroelectric nature of the compound has been confirmed by recording polarization-electric field hysteresis loop. Piezoelectric and pyroelectric studies of the compound have been discussed in this paper. Electrical properties of the material have been analyzed using complex impedance technique. The Nyquist plots manifest the contribution of grain boundaries (at higher temperature), in addition to granular contribution (at all temperatures) to the overall impedance. The temperature dependence of dc conductivity suggests that the compound has negative temperature coefficient of resistance (NTCR) behaviour. The frequency dependence of ac conductivity is found to obey Jonscher’s universal power law. The observed properties have been compared with calcium free Ba₅SmTi₃Nb₇O₃₀ compound.     

Dielectric and impedance study of lead-free ceramic: (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)ZrO<Subscript>3</Subscript>

Polycrystalline sample of (Na_0.5Bi_0.5)ZrO₃ was prepared using a high-temperature solid-state reaction technique. XRD analysis indicated the formation of a single-phase orthorhombic structure. Dielectric study revealed the diffuse phase transition at 425 °C. AC impedance plots were used as tools to analyse the electrical behaviour of the sample as a function of frequency at different temperatures. The ac impedance studies revealed the presence of grain boundary effect at and above 350 °C. Complex impedance analysis indicated non-Debye type dielectric relaxation and negative temperature coefficient of resistance (NTCR) character of (Na_0.5Bi_0.5)ZrO₃. AC conductivity data were used to evaluate the density of states at Fermi level and activation energy of the compound. DC electrical and thermal conductivities of grain and grain boundary have been assessed.     

Dielectric and impedance properties of Nd3/2Bi3/2Fe5O12 ceramics

The polycrystalline sample of Nd_3/2Bi_3/2Fe₅O₁₂ was prepared by a high- temperature solid-state reaction technique. Preliminary X-ray structural analysis exhibits the formation of a single-phase tetragonal structure at room temperature. Microstructural analysis by scanning electron microscopy shows that the sintered sample has well defined grains. These grains are distributed uniformly throughout the surface of the sample. Detailed studies of dielectric response at various frequencies and temperatures exhibit a dielectric anomaly at 400 °C. The electrical properties (impedance, modulus and conductivity) of the material were studied using a complex impedance spectroscopy technique. These studies reveal a significant contribution of grain and grain boundary effects in the material. The frequency dependent plots of modulus and the impedance loss show that the conductivity relaxation is of non-Debye type. Studies of electrical conductivity with temperature demonstrate that the compound exhibits Arrhenius-type of electrical conductivity. Study of ac conductivity with frequency suggests that the material obeys Jonscher’s universal power law.     

Dielectric relaxation phenomena in the compound: LiCo<Subscript>3/5</Subscript>Mn<Subscript>1/5</Subscript>Cu<Subscript>1/5</Subscript>VO<Subscript>4</Subscript>

Solution-based chemical method has been used to produce LiCo_3/5Mn_1/5Cu_1/5VO₄ ceramics. The formation of the compound is checked by X-ray diffraction analysis and it reveals an orthorhombic unit cell structure with lattice parameters of a = 9.8262 Å, b = 3.0706 Å, c = 14.0789 Å. Field emission scanning electron micrograph indicates a polycrystalline texture of the material with grains of unequal sizes (~0.2 to 3 μm). Complex impedance spectroscopy technique is used to study the dielectric properties. Temperature dependence of dielectric constant (ε _r) at various frequencies exhibits the dielectric anomalies in ε _r at T _c (transition temperature) = 245, 255, 260 and 265 °C with (ε_r)_max. ~458, 311, 214 and 139 for 50, 100, 200 and 500 kHz, respectively. Frequency dependence of tangent loss at various temperatures shows the presence of dielectric relaxation in the material.     

Modulus spectroscopy of lead potassium titanium niobate (Pb<Subscript>0.95</Subscript>K<Subscript>0.1</Subscript>Ti<Subscript>0.25</Subscript>Nb<Subscript>1.8</Subscript>O<Subscript>6</Subscript>) ceramics

The modulus Spectroscopy of Lead Potassium Titanium Niobate (Pb_0.95K_0.1Ti_0.25Nb_1.8O₆, PKTN) Ceramics was investigated in the frequency range from 45 Hz to 5 MHz and the temperature, from 30 to 600 °C. XRD analysis in PKTN indicated a orthorhombic structure with lattice parameters a = 18.0809 Å, b = 18.1909 Å and c = 3.6002 Å. The dielectric anomaly with a peak was observed at 510 °C. Variation of ε^I and ε^II with frequency at different temperatures exhibit high values, which reflects the effect of space charge polarization and/or conduction ion motion. The electrical relaxation in ionically conducting PKTN ceramic analyzed in terms of Impedance and Modulus formalism. The Cole–Cole plots of impedance were drawn at different temperatures. The dielectric modulus, which describes the dielectric relaxation behaviour is fitted to the Kohlrausch exponential function. Near the phase transition temperature, a stretched exponential parameter β indicating the degree of distribution of the relaxation time has a small value. From the AC conductivity measurements the activation energy near phase transition temperature (T _C°C) has been found to different from that of the above and below T _C. The temperature dependence of electrical modulus has been studied and results are discussed.     

Structural,dielectric and impedance study of Bi and Li co-substituted Ba<Subscript>0.50</Subscript>Sr<Subscript>0.50</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable microwave devices applications

In this article, the structural, dielectric and electrical properties of Bi and Li co-substituted (Ba, Sr) site in Ba_0.50Sr_0.50TiO₃ ceramics are presented. Four different compositions of Ba_0.50Sr_0.50TiO₃, (Ba_0.50Sr_0.50)_0.98(Bi, Li)_0.02TiO₃, (Ba_0.50Sr_0.50)_0.96(Bi, Li)_0.04TiO_3, and (Ba_0.50Sr_0.50)_0.92(Bi, Li)_0.08TiO₃ were synthesized using solid-state reaction with microwave heating of starting materials. Phase detection for all samples has been examined by XRD along with Rietveld refinement analyses, and the results show the formation of single phase without observation of any secondary phase. However, a decrease in crystallite size, lattice parameters, and unit cell volume has been observed with the increase of Bi and Li concentration. A Dense microstructure with different grains sizes and shapes has been obtained by scanning electron microscopy. Impedance spectroscopy in the temperature range of 30–300 °C and frequency range of 60 Hz–1 MHz has been used to study the dielectric properties. The result shows that the Bi and Li co-substituted Ba_0.5Sr_0.5TiO₃ ceramics exhibit very interesting features, such as enhanced dielectric constant with low loss which make it suitable for microwave tunable devices applications. An electric impedance analysis was carried out at different temperatures namely (400, 450, 500, and 550 °C). A single semicircular arc with single relaxation process has been observed in all studied samples which suggest that the grains contribute to the total resistance in these materials. The activation energy was obtained from the impedance analysis using Arrhenius plot of grain conductivity.     

Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> MOS capacitor

The purpose of this study is to understand the effects of substrate temperature (ST) and post deposition annealing (PDA) on the structural-electrical properties of Gd₂O₃ film and to evaluate the electrical performances of the MOS based devices formed with this dielectric. The Gd₂O₃/Si structures were annealed at 500, 600, 700, and 800 °C under N₂ ambient after the films were grown on heated p-Si substrate at various temperatures ranged from 20 to 300 °C by RF magnetron sputtering. For any given ST, the crystallization/grain size increased with increasing PDA temperature. The bump in the accumulation region or continuous decrease in the capacitance values of the inversion region of the C–V curves for 800 °C PDA was not observed. The lowest effective oxide charge density (Q _eff ) value was obtained to be ??1.13?×?10¹¹ cm^?2 from the MOS capacitor with Gd₂O₃, which is grown on heated Si at 300 °C and annealed at 800 °C. The density of the interface states (D _it ) was found to be in the range of 0.84?×?10¹¹ to 1.50?×?10¹¹ eV^?1 cm^?2. The highest dielectric constant (ε) and barrier height \(({\Phi _B})\) values were found to be 14.46 and 3.68, which are obtained for 20 °C ST and 800 °C PDA. The results show that the negative charge trapping in the oxide layer is generally more than that of the positive, but, it is reverse of this situation at the interface. The leakage current density decreased after 20 °C ST, but no significant change was observed for other ST values.     

Effects of sintering temperature on the properties of Mn/Y codoped Ba<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable application

(Ba_0.67Sr_0.33)_1?3x/2Y _x Ti_1?y/2Mn _y O₃ [BST(Mn + Y), x = 0.006, y = 0.005] ceramics were fabricated by using citrate–nitrate combustion derived powder. Microstructure and dielectric properties of the BST(Mn + Y) ceramic samples were investigated within the sintering temperature ranged from 1220 to 1300 °C. Sintering temperature has a great influence on the microstructure and electrical properties of the ceramic samples. The dielectric properties, ferroelectric properties, and tunability are enhanced by optimizing sintering temperature. The relatively high tunability of 40 % (1.5 kV/mm DC field, 10 kHz) was obtained, and relatively low dielectric loss, <0.0052 (at 10 kHz, 20 °C) was acquired for BST(Mn + Y) samples sintered at 1275 °C for 3 h. Both the low dielectric loss and enhanced tunable properties of BST(Mn + Y) are useful for tunable devices application.     

Structural and electrical properties of Ba<Subscript>5</Subscript>SmTi<Subscript>3</Subscript>V<Subscript>7</Subscript>O<Subscript>30</Subscript> ceramics

Polycrystalline sample of Ba₅SmTi₃V₇O₃₀ was prepared by a high-temperature solid-state reaction technique. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray preliminary structural studies reveal that the material has orthorhombic structure at room temperature. Detailed electrical (dielectric and impedance) properties of the material studied by using a complex impedance spectroscopy (CIS) technique in a wide temperature range (33–450 °C) at different frequencies (10²–10⁶ Hz) reveal that the relative dielectric constant of the material increases with rise in temperature and thus bulk has a major contribution to its dielectric and electrical properties. The bulk resistance of the material decreases with rise in temperature exhibiting a typical negative temperature coefficient of resistance (NTCR) behavior. The nature of the temperature variation of conductivity and value of activation energy, suggest that the conduction process is of mixed-type (ionic–polaronic and space charge). The existence of ferroelectricity in the compound was confirmed from polarization study.     

Ordered mesoporous inter-filled SiC/SiO<Subscript>2</Subscript> composites with high-performance microwave absorption by adding ethylenediamine

In this study, ordered mesoporous inter-filled silicon carbide/silica composites containing ethylenediamine (EDA-SiC/SiO₂) were fabricated by nanocasting and cold-pressing. The as-prepared composites exhibited enhanced microwave absorption. By multi-technique approach utilization, it was demonstrated that EDA acted as a carbon source during pyrolysis progress. The EDA-SiC/SiO₂ fabricated at 1300 °C exhibited a minimum reflection loss (RL) of ?53.0 dB at 10.1 GHz, and effective absorption bandwidth (RL < ?10 dB) covered the entire X-band. It was also illustrated that the enhanced dielectric loss originated from the high electrical conductivity induced by the ordered inter-filled network and crystalline carbon. Furthermore, the optimal absorbing thickness was also determined by the impedance match and quarter-wavelength law.