微波低噪声SiGe HBT的研制

利用3μm工艺条件制得SiGe HBT(Heterojunction Bipolar Transistor),器件的特征频率达到8GHz.600MHz工作频率下的最小噪声系数为1.04dB,相关功率增益为12.6dB,1GHz工作频率下的最小噪声系数为1.9dB,相关功率增益为9dB,器件在微波无线通信领域具有很大的应用前景.     

SiGe HBT低噪声放大器的设计与制造

该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35 m Si CMOS平面工艺制定了放大器单芯片集成的工艺流程。为了进一步降低放大器的噪声系数,在制作放大器中SiGe器件时,采用钛硅合金(TiSi2)来减小晶体管基极电阻。由于没有使用占片面积大的螺旋电感,最终研制出的SiGe HBT LNA芯片面积仅为0.282 mm2。测试结果表明,在工作频带0.2-1.2 GHz内,LNA噪声系数低至2.5 dB,增益高达26.7 dB,输入输出端口反射系数分别小于-7.4 dB和-10 dB。     

一种基于MBE差分外延技术的SiGe低噪声放大器

采用MBE差分外延生长SiGe HBT基区,等平面隔离,多晶硅注入、快速退火形成发射区等工艺,实现了SiGe器件的平面集成。基于上述工艺技术研制的SiGe低噪声放大器(LNA),获得了1.7 GHz的带宽,23 dB的增益和3.5 dB的噪声系数。     

基于IEEE802.11a标准的SiGe HBT LNA的设计

基于IEEE802.11a标准描述了一款SiGe HBT低噪声放大器(LNA)的设计.为适应该标准的要求,给出了噪声、功率增益及稳定性的优化方法.选用SiGe HBTs作为有源元件,采用T型输入、输出匹配网络设计了电路,并用安捷伦ADS-2006A软件对噪声系数、增益等各项指标进行了仿真.最终在频率为5.2 GHz下,LNA噪声系数F为1.5 dB,增益S21达到12.6 dB,输入、输出反射系数S11和|S22较好,在工作频带内小于-10 dB,LNA性能良好.     

双频带低噪声放大器设计

基于Jazz 0.35 μm SiGe工艺,设计了一款能够在1.8 GHz和2.4 GHz不同频段带独立工作的低噪声放大器.放大器使用噪声性能优良的SiGe HBT,采用Cascode结构减少米勒效应的影响.输入电路采用由两次连续的频率变换和电路转换得到的双频滤波电路,输出端用射随器实现50Ω阻抗匹配.结果表明,该低噪...     

英飞凌制造出SiGe∶C基RF晶体管

英飞凌公司透露了他们用SiGe∶C工艺技术制造RF半导体器件。这种SiGe∶C技术是英飞凌公司最新一代HBT的基础,它使得硅基分立晶体管的噪声系数在6GHz下仅0.75dB,6GHz下的增益高至19dB。英飞凌的RF晶体管的典型过渡频率为42GHz,1.8GHz下的噪声系数0.5dB,6GHz下0.75dB。这些器件1.8GHz下的最大稳定功率增益Gms为28dB,6GHz下最大可用功率增益Gma典型值为19dB,它们可用于宽RF频段和无线用途,如无线局域网(WLAN)。该公司的HBT芯片还具有金金属化的特点。英飞凌制造出SiGe∶C基RF晶体管@陈裕权…     

基于0.13 μm SiGe BiCMOS工艺的Ka波段低噪声放大器的设计

介绍了一款基于SiGe BiCMOS工艺的Ka波段低噪声放大器(LNA)的设计与测试。分析了毫米波频段硅基集成电路的匹配设计方法,给出了HBT晶体管电流密度与噪声系数的关系,以及最佳噪声偏置点的选取方法。并基于以上方法设计了单级共基共射低噪声放大器,LNA芯片基于Global Foundry 8HP工艺流片验证。测试结果表明,该LNA实现了30~40GHz的-1dB带宽、小于3.5dB的噪声系数以及6.2dBm的1dB压缩输出功率(P-1dB);输入输出反射系数均小于-15dB,中心频率(35GHz)处增益为7.2dB(单级),LNA的直流电流为6.7mA,电源电压为1.8V。     

微波低噪声SiGe HBT的研制

利用3μm工艺条件制得SiGeHBT(HeterojunctionBipolarTransistor),器件的特征频率达到8GHz.600MHz工作频率下的最小噪声系数为1.04dB,相关功率增益为12.6dB,1GHz工作频率下的最小噪声系数为1.9dB,相关功率增益为9dB,器件在微波无线通信领域具有很大的应用前景     

版图尺寸对SiGe/Si HBT高频噪声特性的影响

从实验上研究了版图尺寸对Si/SiGe HBT高频噪声特性的影响。结果表明,在现有工艺条件下,减少外基区电阻(即减少发射极与基区间距),对降低高频噪声很显著。增加基极条数、增加条长也可减少基极电阻,降低高频噪声。发射极条宽从2μm减少为1μm,对噪声的改善很有限。对1μm或2μm条宽,40μm条长的5个基极条或9个基极条的SiGe HBT,在片测试表明,频率从0.4 GHz增加到1.2 GHz,噪声系数在2.5~4.6 dB之间变化。     

三级微波宽带低噪声放大器的设计

介绍了SiGe异质结晶体管的特点和微波宽带低噪声放大器的设计理论;设计了一个采用SiGe异质结晶体管2sc5761的两级微波宽带低噪声放大器电路,并对电路的各项指标进行了优化设计;运用candence软件对电路进行了DRC,LVS验证。在0.5~6 GHz得到12 dB以上的增益和不足2.5 dB的噪声系数,及优良的线性度。     

Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors

We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85 K, 120 K, 150 K, 200 K, and 300 K. These devices show excellent behavior down to 85 K, maintaining reasonable dc ideality, with a peak current gain of 3800, a peak cut-off frequency (f/sub T/) of 260 GHz, a peak f/sub max/ of 310 GHz, and a minimum noise figure (NF/sub min/) of approximately 0.30 dB at a frequency of 14 GHz, in all cases representing significant improvements over their corresponding values at 300 K. These results demonstrate that aggressively scaled SiGe HBTs are inherently well suited for cryogenic electronics applications requiring extreme levels of transistor performance.     

Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures

In this letter, the microwave and noise performance of SiGe heterojunction bipolar transistors (HBTs) has been characterized when cooling down the temperature. It was found that SiGe HBTs (fabricated in the framework of BiCMOS process) exhibit a maximum oscillation frequency f/sub max/ of about 292 GHz at 78 K, which represents an increase of about 30% with the value measured at room temperature. The noise performance has also been characterized at cryogenic temperatures, using an original de-embedding approach. Then, using the Hawkin's noise model in conjunction with an accurate small signal equivalent extraction, the four noise parameters have been estimated. The noise figure with a 50 /spl Omega/ source impedance was measured to be equal to 1.5 dB at 40 GHz at 78 K, which is one of the lowest value reported for BiCMOS SiGe HBT in the millimeter-wave range.     

The effects of geometrical scaling on the frequency response andnoise performance of SiGe HBTs

We examine the geometrical scaling issues in SiGe HBT technology. Width Scaling, length scaling, and stripe-number scaling are quantified from a radio frequency (RF) design perspective at 2 GHz. We conclude that a SiGe HBT with emitter area A_E=0.5×20×6 μm² is optimum for low noise applications at J_c=0.1 mA/μm² and f=2 GHz using the design methodology, which guarantees optimal noise and input impedance matching with the simplest matching network. Finally, the optimal device sizes at f=4 and 6 GHz for low noise applications are also obtained using the same method     

Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave Imaging

This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for Doppler radar and millimeter-wave imaging, particularly within the automotive radar band of 77-81 GHz. A 1.3 mm times 0.9 mm 86-96 GHz receiver is also presented. The transceiver, fabricated in a 130 nm SiGe HBT technology with f_T/f_MAX of 230/300 GHz, consumes 780 mW, and occupies 1.3 mm times 0.9 mm of die area. Furthermore, it achieves 40 dB conversion gain in the receiver at 82 GHz, a 3 dB bandwidth extending from 77 to 85 GHz at 25degC, and covering the entire 77-81 GHz band up to 100degC, record 3.85 dB DSB noise figure measured at 82 GHz LO and 1 GHz IF, and an IP_1dB of -35 dBm. The transmitter provides + 11.5 dBm of saturated output power at 77 GHz, and a divide64 static frequency divider is included on-die. Successful detection of a Doppler shift of 30 Hz at a range of 6 m is shown. The 86-96 GHz receiver achieves 31 dB conversion gain, a 3 dB bandwidth of 10 GHz, and 5.2 dB DSB noise figure at 96 GHz LO and 1 GHz IF, and -99 dBc/Hz phase noise at 1 MHz offset. System-level layout and integration techniques that address the challenges of low-voltage transceiver implementation are also discussed.     

Balanced Colpitt oscillator MMICs designed for ultra-low phase noise

Balanced voltage-controlled oscillator (VCO) monolithic microwave integrated circuits (MMICs) based on a coupled Colpitt topology with a fully integrated tank are presented utilizing SiGe heterojunction bipolar transistor (HBT) and InGaP/GaAs HBT technologies. Minimum phase noise is obtained for all designs by optimization of the tank circuit including the varactor, maximizing the tank amplitude, and designing the VCO for Class C operation. Fundamental and second harmonic VCOs are evaluated. A minimum phase noise of less than -112 dBc at an output power of 5.5 dBm is achieved at 100-kHz carrier offset and 6.4-GHz oscillation frequency for the fundamental InGaP/GaAs HBT VCO. The second harmonic VCO achieves a minimum measured phase noise of -120 dBc at 100 kHz at 13 GHz. To our best knowledge, this is the lowest reported phase noise to date for a varactor-based VCO with a fully integrated tank. The fundamental frequency SiGe HBT oscillator achieves a phase noise of -108 dBc at 100 kHz at 5 GHz. All MMICs are fabricated in commercial foundry MMIC processes.     

射频Si/SiGe/Si HBT的研究

在Si／SiGe／SiHBT与Si工艺兼容的研究基础上，对射频Si／SiGe／SiHBT的射频特性和制备工艺进行了研究，分析了与器件结构有关的关键参数寄生电容和寄生电阻与Si／SiGe/Si HBT的特征频率fT和最高振荡频率fmax的关系，成功地制备了fT为2．5CHz、fmax为2．3GHz的射频Si／SiGe／SiHBT，为具有更好的射频性能的Si／SiGe／Si HBT的研究建立了基础。     

A Low-Power,$X$-Band SiGe HBT Low-Noise Amplifier for Near-Space Radar Applications

A low-power,$X$-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780$times hbox660 muhboxm^2$. The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across$X$-band, and an input third-order intercept point of$-$9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance of this LNA, together with its natural total-dose radiation immunity, demonstrates the potential of SiGe HBT technology for near-space radar applications.     

Theoretical Analysis of a Low Dispersion SiGe LNA for Ultra-Wideband Applications

We demonstrate a low dc power consumption SiGe heterojunction bipolar transistor (HBT) low noise amplifier (LNA) for ultra-wideband (UWB) applications covering the 0.5GHz to 10GHz band. Using theoretical analysis, the dominant design factor for low group delay variation is identified and applied to UWB LNA design. The implemented SiGe LNA achieves a gain of 13dB, a minimum noise figure of 3.3dB, and an IIP3 of$-$7.5dBm between 0.5GHz and 10GHz, while consuming a dc power of only 9.6mW. This SiGe UWB LNA exhibits less than 22ps of uniform group delay variation over the entire band. To the best of the authors' knowledge, this is the first attempt to analyze the effects of group delay variation on the operation of wideband LNAs.     

Si/ SiGe/ Si HBT 的直流特性和低频噪声

在对Si/SiGe/Si HBT及其Si兼容工艺的研究基础上，研制成功低噪声Si/SiGe/Si HBT，测试和分析了它的直流特性和低频噪声特性，为具有更好的低噪声性能的Si/SiGe/Si HBT的研究建立了基础。     

与Si 工艺兼容的Si/ SiGe/ Si HBT 研究

我们对Si/SiGe/Si HBT及其Si兼容工艺进行了研究,在研究了一些关键的单项工艺的基础上,提出了五个高速Si/SiGe/Si HBT结构和一个低噪声Si/SiGe/Si HBT结构,并已研制成功台面结构Si/SiGe/Si HBT和低噪声Si/SiGe/Si HBT,为进一步高指标的Si/SiGe/Si HBT的研究建立了基础。