Thin-Layer Dielectrics in the Pb[(Mg1/3Nb2/3)1-xTix]O3 System

Thin layers of Pb[(Mg_1/3Nb_2/3)_{1– x} Ti _x ]O₃ (PMNT) were prepared by spin casting alkoxide-based solutions on platinized Si. The effects of additives, heat treatment, and composition ( x = 0 to 0.9) on perovskite phase development, ceramic microstructure, and dielectric properties are reported. Depending upon the processing conditions, ceramic thin layers could be formed in a nonferroelectric pyrochlore phase (A₂B₂O₆) or in a ferroelectric perovskite phase (ABO₃). The dimensions of the pyrochlore and perovskite units cells were related and increased with Mg and Nb contents. To minmize pyrochlore formation, the most effective processing method involved rapid heat treatment between successive solution depositions. Phase development and microstructure were also affected by solution additives. Additions of benzoic acid were found to affect the structure in solution and the later organic pyrolysis behavior from thin layers. The effect of composition on the dielectric and ferroelectric properties is also reported.     

Piezoelectric Properties of Pb(Mg1/3Nb2/3)O3 PbTiO3 -PbZrO3 Ceramics Modified with Certain Additives

Effects of additives on the piezoelectric properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃-PbZrO₃ ceramics in a perovskite-type structure are described. The tetragonality of Pb(Mg_1/3Nb_2/3)_0.375-Ti_0.375Zr_0.25O₃ ceramics increased with the addition of NiO, Cr₂O₃, or Fe₂O₃ but decreased with the addition of MnO₂ or CoO. The dielectric and piezoelectric properties of the base composition were improved markedly through selection of additives in proper amounts. Addition of NiO yielded a high dielectric constant and planar coupling coefficient for compositions at the morphotropic transition boundary. High mechanical Q -factors and low electrical dissipation factors were obtained by addition of MnO₂. Addition of both NiO and MnO₂ produced a mechanical Q -factor of 2051 and a planar coupling coefficient of 0.553. The resonant frequency of Pb(Mg_1/2Nb_2/3)_0.4375Ti_0.4375 zr_0.125O₃ containing MnO₂ had very low temperature and time dependence. The microstructure indicated that ceramics with a high mechanical Q -factor had a fine, uniform grain structure. Addition of Cr₂O₃ retarded grain growth and addition of MnO₂, NiO, CoO, or Fe₂O₃ promoted grain growth in the ternary system.     

Cation Ordering and Domain Boundaries in Ca[(Mg1/3Ta2/3)1−xTix]O3 Microwave Dielectric Ceramics

Cation ordering and domain boundaries in perovskite Ca[(Mg_1/3Ta_2/3)_{1− x} Ti _x ]O₃ ( x =0.1, 0.2, 0.3) microwave dielectric ceramics were investigated by high-resolution transmission electron microscopy (HRTEM) and Rietveld analysis. The variation of ordering structure with Ti substitution was revealed together with the formation mechanism of ordering domains. When x =0.1, the ceramics were composed of 1:2 and 1:1 ordered domains and a disordered matrix. The 1:2 cation ordering could still exist until x =0.2 but the 1:1 ordering disappeared. Neither 1:2 nor 1:1 cation ordering could exist at x =0.3. The space charge model was used to explain the cation ordering change from 1:2 to 1:1 and then to disorder. A comparison between the space charge model and random layer model was also conducted. HRTEM observations showed an antiphase boundary inclined to the (111) _c plane with a projected displacement vector in the 〈001〉 _c direction and ferroelastic domain boundaries parallel to the 〈100〉 _c direction.     

Synthesis of 0.4Pb(Mg1/3Nb2/3)O3–0.3Pb(Mg1/2W1/2)O3–0.3PbTiO3 Ceramics by Metal Alkoxide Method, and Its Dielectric Properties

0.4Pb(Mg_1/3Nb_2/3)O₃–0.3Pb(Mg_1/2W_1/2)O₃–0.3PbTiO₃+ x MgO ( x = 0 to 0.04) were prepared by a metal alkoxide method. The percent of perovskite phase of the calcined powders increased with increased calcination temperatures. About 89% of perovskite phase was obtained at 1050°C. The dielectric constant of the pellets fired at 1100°C was increased by the addition of 10 wt% excess Mg(OC₂H₅)₂ and had a maximum value of 7532 at 1 kHz.     

Single-Calcination Synthesis of Pyrochlore-Free 0.9Pb(Mg1/3Nb2/3)O3–0.1PbTiO3 and Pb(Mg1/3Nb2/3)O3 Ceramics Using a Coating Method

A coating approach for synthesizing 0.9Pb(Mg_1/3Nb_2/3)O₃–0.1PbTiO₃ (0.9PMN–0.1PT) and PMN using a single calcination step was demonstrated. The pyrochlore phase was prevented by coating Mg(OH)₂ on Nb₂O₅ particles. Coating of Mg(OH)₂ on Nb₂O₅ was done by precipitating Mg(OH)₂ in an aqueous Nb₂O₅ suspension at pH 10. The coating was confirmed using optical micrographs and zeta-potential measurements. A single calcination treatment of the Mg(OH)₂-coated Nb₂O₅ particles mixed with appropriate amounts of PbO and PbTiO₃ powders at 900°C for 2 h produced pyrochlore-free perovskite 0.9PMN–0.1PT and PMN powders. The elimination of the pyrochlore phase was attributed to the separation of PbO and Nb₂O₅ by the Mg(OH)₂ coating. The Mg(OH)₂ coating on the Nb₂O₅ improved the mixing of Mg(OH)₂ and Nb₂O₅ and decreased the temperature for complete columbite conversion to ∼850°C. The pyrochlore-free perovskite 0.9PMN–0.1PT powders were sintered to 97% density at 1150°C. The sintered 0.9PMN–0.1PT ceramics exhibited a dielectric constant maximum of ∼24 660 at 45°C at a frequency of 1 kHz.     

Synthesis of Phase-Pure Pb(ZnxMg1–x)1/3Nb2/3O3 up to x= 0.7 from a Single Mixture via a Soft-Mechanochemical Route

Phase-pure perovskite Pb(Zn _x Mg_{1– x} )_1/3Nb_2/3O₃ solid solution (PZ _x M_{1– x} N) is obtained for x ≦ 0.7 by heating a milled stoichiometric mixture of PbO, Mg(OH)₂, Nb₂O₅, and 2ZnCO₃·3Zn(OH)₂·H₂O at 1100°C for 1 h. Percent perovskite ( f _P) with respect to total crystalline phase decreases with increasing temperature of subsequent heating then increases to 900°C for the mixtures where x ≦ 0.8 and milled for 3 h. For mixtures with x = 0.9 and x = 1, f _P decreases monotonically. Curie temperature increases almost linearly with increasing x up to x = 0.7. The maximum dielectric constant at 1 kHz is 2×10⁴ and 1.7×10⁴ for the mixture with x = 0.4 and x = 0.7, respectively. The stabilization mechanism of strained perovskite is discussed.     

Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part I, Bi4Ti3O12

Ferroelectric thin films of bismuth-containing layered perovskite Bi₄Ti₃O₁₂ have been fabricated by a metalorganic decomposition (MOD) method. Crack-free and crystalline films of ∼5000 Å thickness have been deposited on Pt/Ti/SiO₂/Si substrates. Different heat treatments have been studied to investigate the nucleation and growth of perovskite Bi₄Ti₃O₁₂ crystallites. If the same composition and final annealing temperature are used, films with different orientations are obtained by different heating schedules. These films show a large anisotropy in ferroelectric properties. Theoretical considerations are presented to suggest that nucleation control is responsible for texture and grain-size evolution. Moreover, the origin of the ferroelectric anisotropy is rooted in the two-dimensional nature of layered polarization.     

Ferroelectric and Structural Properties of the Pb(Sc1/2Nb1/2)1-x,Tix,O3 System

Extensive solid solution was observed in the system Pb(Sc_1/2/,Nb_1/2,)_1-x,Ti_x,O₃. In the range 0 ≤ x ≤ 0.425 a rhombohedral ferroelectric phase was stable at 25° C. In the range 0.45 ≤ x ≤ 1.00 a tetragonal ferroelectric phase was stable at this temperature. The phase diagram of the system below 500° C strongly resembles that of PbZrO₃−PbTiO₃. The compound Pb(Sc_1/2Nb_1/2)O₃ exhibited rhombohedral perovskite cell symmetry below the ferroelectric ↔ paraelectric transition temperature, and the angle a was acute. The radial coupling coefficient was 0.46 for the composition Sc_1/2Nb_1/2)_0.575Ti_0.4250O₃. At 25°C this composition consisted primarily of the rhombohedral phase with a small amount of the tetragonal phase present. The ferroelectric ↔ paraelectric transition occurred over a temperature range in the rhombohedral phase field. The spontaneous polarization was finite at temperatures considerably above the temperature of the permittivity maximum for a given rhombohedral solid solution.     

Phase Studies in the Binary System MgO–Ta2O5

The objective of this investigation was to determine subsolidus phase relations in the system MgO–Ta₂O₅ and to obtain accurate crystallographic data on the compounds formed. MgO and Ta₂O₅ formed three compounds: Mg₄Ta₂O₉, Mg₃Ta₂O₈, and MgTa₂O₆. Mg₄Ta₂O₉ and MgTa₂O₆ appeared to be stable up to their melting points, whereas Mg₃Ta₂O₈ was stable only between 1475° and about 1675°C. X-ray diffraction and density data are presented for the three compounds.     

In-Plane Polarized 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films

Ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) thin films were deposited on ZrO₂/SiO₂/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm²) than for through-the-thickness polarized PMN-PT thin films (10–12 μC/cm²) deposited on Pt/Ti/Si substrates. For a finger spacing of 20 μm, the piezoelectric voltage sensitivity of in–plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.     

Stabilization of Ordered Zirconium Titanates through the Chemical Substitution of Ti4+by Al3+/Ta5+

We have investigated the ZrO₂–AITaO₄ system to understand how selected chemical substitutions can be used to control cation-ordering transformations in zirconium titanate based dielectric ceramics. The complete replacement of the Ti content of Zr _x Ti_2–xO₄ by a coupled Al³⁺/Ta⁵⁺ substitution permits the synthesis of a wide range of isostructural Zr _x (Al_0.5Ta_0.5)_2–xO₄ solid solutions. At high temperatures a disordered α-PbO₂ type of structure is formed for 0.375 ≤ x ≤ 1.03. Samples with 0.67 ≤ x ≤ 1.03 undergo a cation-ordering reaction to a structure in which the a and b axes of the parent disordered Cell are doubled. The stabilities of these cation-ordered derivative structures are significantly greater than those of the ordered zirconium titanates. The ordering temperatures are composition dependent with a maximum of 1393°C occurring for Zr_0.86(Al_0.5TaO_0.5)_1.14O₄. The higher transition temperatures also enhance the kinetics of the ordering transition; whereas the pure zirconium titanates require extended annealing to produce complete cation order, fully ordered Zr_χ(Al_0.5Ta_0.5)_2–χO₄ solid solutions are produced during a normal furnace cool.     

Effect of MnO2 Addition on the Structure and Electrical Properties of Pb(Zn1/3Nb2/3)0.20(Zr0.50Ti0.50)0.80O3 Ceramics

Pb(Zn_1/3Nb_2/3)_0.20(Zr_0.50Ti_0.50)_0.80O₃ ceramics of pure perovskite structure were prepared by the two-stage method with the addition of 0–3.0 wt% MnO₂ and their piezoelectric properties were investigated systematically. The MnO₂ addition influences in a pronounced way both the crystal structure and the microstructure of the materials. The materials are transformed from the tetragonal to the rhombohedral structure, and the grain size is enhanced when manganese cations are added. The distortion of crystal structure for samples with MnO₂ addition can be explained by the Jahn–Teller effect. The values of electromechanical coupling factor ( k _p) and dielectric loss (tan δ) are optimized for 0.5-wt%-MnO₂-doped samples ( k _p= 0.60, tan δ= 0.2%) and the mechanical quality factor ( Q _m) is maximized for 1.0-wt%-MnO₂-doped samples ( Q _m= 1041), which suggests that oxygen vacancies formed by substituting Mn³⁺ and Mn²⁺ ions for B-site ions (e.g., Ti⁴⁺ and Zr⁴⁺ ions) in the perovskite structure partially inhibited polarization reversal in the ferroelectrics. The ceramics with 0.50–1.0 wt% MnO₂ addition show great promise as practical materials for piezoelectric applications.     

Rapid Thermal Processing of Pb(Mg0.7Zn0.3)1/3Nb2/3O3 Multilayer Ceramic Capacitors

Fast firing, with total sintering times of between 3 and 15 min, was utilized to process multilayer ceramic capacitors of dielectric composition Pb(Mg_0.7Zn_0.3)_1/3Nb_2/3O₃. This dielectric composition has been studied extensively because of its diffuse phase transition, which is intrinsic to relaxors, and also its high dielectric constant. The fast-firing procedure, which did not utilize any prevention for PbO volatilization, has been shown to be a feasible method for the processing of these components. Sintering times in the range of 12 to 15 min at 1100°C resulted in components with weak field dielectric constants in excess of 12 000 and grain sizes in the range of 1 μm or less. The development of a pyrochlore phase at the component surfaces was less influential on the dielectric performance of the components because of the internal nature of the electrodes.     

Preparation of Perovskite Pb(Mg1/3Nb2/3)03 Using Pb3Nb208 and MgO

The synthesis of perovskite Pb(Mg_1/3Nb_2/3)O₃ from an equimolar mixture of Pb₃Nb₂0₈ and MgO was studied by solid-state reaction techniques. An addition of 1 wt% excess MgO to the stoichiometric composition enhances the formation of the cubic perovskite phase. The absence of free PbO in the initial starting materials minimizes the volatilization loss during firing, thereby reducing the possibility of any compositional change and resulting in a substantial improvement of the perovskite phase purity over the conventional mixed-oxide processing.     

Sol–Gel Processing and Microwave Characteristics of Ba(Mg⅓Ta⅔)O3 Dielectrics

The sol–gel method has been developed for the preparation of pure Ba(Mg_1/3Ta_2/3)O₃ ceramics. This involves the reaction of the heterometallic alkoxide Ta₂Mg(OEt)₁₂ with hydrated barium hydroxide Ba(OH)₂·8H₂O. Complete crystallization of the sol–gel-derived powder is achieved at 600°C, leading to a cubic perovskite type phase. After sintering at 1400°C (2–5 h), a trigonal cell arises from Mg–Ta ordering (the degree of order is greater than 0.9), and about 98.5% of the theoretical density is obtained. Preliminary microwave dielectric measurements show that the dielectric constant and the unloaded Q _u of the ceramics are 24.2 and 6750, respectively, at 7.7 GHz.     

Characterization of the Piezoelectric Properties of Pb0.98Ba0.02(Mg1/3Nb2/3)O3–PbTiO3 Epitaxial Thin Films

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) (70/30) thin films were deposited by pulsed laser deposition using two growth strategies: adsorption controlled deposition from lead-rich targets (∼25–30 mass%) and lower-temperature deposition ( T _d≤600°C) from targets containing a small amount of excess lead oxide (≤3 mass %). The substrates used were (001) SrRuO₃/LaAlO₃. Typical remanent polarization values ranged between 12 and 14 μC/cm² for these films. The longitudinal piezoelectric coefficient ( d _33,f) was measured using in situ four-circle X-ray diffraction, and the transverse coefficient ( d _31,f or e _31,f) was measured using the wafer flexure method. d _33,f and e _31,f coefficients of ∼300–350 pm/V and ∼−11 C/m² were calculated, respectively. In general, the piezoelectric coefficients and aging rates were strongly asymmetric, suggesting the presence of a polarization bias. The large, extremely stable piezoelectric response that results from poling parallel to the preferred polarization direction is attractive for miniaturized sensors and actuators.     

Effect of BaWO4 on the Microwave Dielectric Properties of Ba(Mg1/3Ta2/3)O3 Ceramics

Physical and microwave dielectric properties of complex perovskite Ba(Mg_1/3Ta_2/3)O₃ ceramics have been investigated as a function of the amount of BaWO₄ in the temperature range from 20° to 80°C at 10.5 GHz. Up to 0.05 mol BaWO₄ addition, the lattice constant ratio ( c/a ), ordering parameter, apparent density, and unloaded Q all increase, due to the increase in the substitution of Ta⁵⁺ ions of Ba(Mg_1/3Ta_2/3)O₃ by W⁶⁺ ions from the melted BaWO₄ at above 1430°C. With further addition of BaWO_4, the unloaded Q decreases, due to an increase of the BaWO₄ phase. The temperature coefficient of resonant frequency (TCF) can be controlled by the volume mixture rule of Ba(Mg_1/3Ta_2/3)O₃ and BaWO₄. When 0.09 mol BaWO₄ is added, TCF becomes 0 ppm/°C.     

High Piezoelectric and Dielectric Properties of La-Doped 0.3Pb(Zn1/3Nb2/3)O3–0.7Pb(ZrxTi1−x)O3 Ceramics Near Morphotropic Phase Boundary

La-doped 0.3Pb(Zn_1/3Nb_2/3)O₃–0.7Pb(Zr _x Ti_{1− x} )O₃ ( x =0.5–0.53) piezoelectric ceramics with pure perovskite phase were synthesized by a two-step hot-pressing route. The piezoelectric properties of various compositions near the morphotropic phase boundary (MPB) were systematically investigated. Not only was the exact MPB of this system determined via X-ray diffractometry analysis, but also the peak of piezoelectric properties was found near the MPB. The optimum piezoelectric properties of this series were observed in the specimen with Zr/Ti=51/49. The piezoelectric coefficient ( d ₃₃) and electromechanical coupling factor ( k _p) were 845 pC/N and 0.70, respectively, which have not been reported in this system so far. Large permittivity (ɛ_r=4088) and permittivity maximum (ɛ_m=29 500) were also obtained for the poled specimens. The temperatures ( T _max) of the permittivity maxima ranged from 206° to 213°C with various Zr/Ti ratios.     

Structural and Dielectric Properties of Ag(Nb0.8Ta0.2)1−xSbxO3 (x≤0.08) Ceramics

Sb₂O₅ were selected to substitute (Nb_0.8Ta_0.2)₂O₅ and the effects of Sb substitution on the dielectric properties of Ag(Nb_0.8Ta_0.2)O₃ ceramics were studied. The perovskite Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics showed no obvious change with x value being no more than 0.08, and the pseudoperovskite unit cell parameters a = c , b and monoclinic angle β decrease with Sb concentration increasing. The dielectric properties of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics were found to be affected greatly by the substitution of Sb for Nb/Ta. The ɛ value of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics sintered at their densified temperature increased from 480 to 825 with x from 0 to 0.08, the tan δ value decreased sharply from 0.0065 to 0.0023 (at 1 MHz) with x increasing from 0 to 0.04, and then kept a stable lower tan δ value ∼0.0024 with x to 0.08. The temperature coefficient of capacitance values continuously decreased from a positive value of 1450 ppm/°C for x =0 to a negative value of −38.52 ppm/°C for x =0.08.     

Effects of Excess Bi2O3 on the Ferroelectric Behavior of Nd-Doped Bi4Ti3O12 Thin Films

Effects of excess Bi₂O₃ content on formation of (Bi_3.15Nd_0.85)Ti₃O₁₂ (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi₂O₃ content and post-sputtering annealing temperature, as examined by XRD, SEM, and P – E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P – E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi₂O₃ excess (5 mol%), where a remanent polarization 2P _r of 25.2 μC/cm² and 2E _c of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi₂O₃ content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi₂O₃.