Mg-Al-Cr-Fe系高温NTC陶瓷材料的改性研究

采用传统陶瓷方法制作了Mg1+xAl0.8Cr0.6Fe0.6Lay(x=–0.10,–0.05,0,0.05,0.10,0.15,0.20;y=0,0.05)系高温NTC陶瓷材料,借用XRD、SEM和电性能测试等手段,研究了MgO含量及La2O3掺杂对陶瓷材料相结构和电学性能的影响规律。结果表明:适当增加MgO的含量可以有效提高陶瓷材料的常温电阻率和B值(材料常数),La2O3掺杂可改善高温NTC陶瓷材料B值的稳定性。当x=0.15,y=0.05时,在1 873 K烧结可获得ρ25=7.55×1010.cm,B=8 795 K的高温NTC陶瓷材料。     

稀土元素改性的Sr_(0.5)Ba_(0.5)Nb_2O_6铁电晶体及红外探测器

现已制备和研究了分子式为(Sr_(1-x)Ba_x)_(1-3y/2)R_yNb_2O_6的稀土元素改性的铁电晶体,这里R=La,Nd,Sm,Gd,和Lu。当R=La,Nd,x(?)0.5和 y=0.02时,在室温,改性材料的热电系数为没改性Sr_(1-x)Ba_x Nb_2O_6(x=0.5)的两倍,介电常数是它的四倍。由于加了稀土元素的杂质,所以使居里温度下降,介电常数增加,然而损耗因数和探测器信噪比几乎保持不变。根据测量性能计算的灵敏度与实际探测器测量的相符合。这些性质暗示出对于小尺寸或多元热电红外探测器的应用,改性的SBN是好材料。     

Ca~(2+)、Zr~(4+)共替代对YAlIG铁氧体性能的影响

采用固相烧结法制备旋磁铁氧体材料Y_(3-x)Ca_xAl_(0.33)Fe_(4.6-x)Zr_xMn_(0.02)O_(12)(摩尔分数x=0、0.2、0.25、0.3、0.35)。详细研究了Ca~(2+)、Zr~(4+)共替代对钇铝石榴石(YalIG)铁氧体性能的影响。研究表明,Ca~(2+)、Zr~(4+)替代对YAlIG铁氧体的介电常数影响微弱。随着替代量x的增加,YAlIG的饱和磁化强度起初呈上升趋势,但当替代量过多时,会使材料中产生另相,反而降低材料的饱和磁化强度(4πMs)。适量Ca~(2+)、Zr~(4+)共替代会明显降低YAlIG材料的铁磁共振线宽,随替代量x的增加,YAlIG材料的铁磁共振线宽(ΔH)先下降后上升,在无另相产生前的最大替代量x=0.3时,材料ΔH获得最小值。     

sol-gel法制备镉掺杂铁酸镧气敏材料

研究了气敏材料的制备条件、相组成、电导和气敏性能。结果表明:固溶体La1–xCdxFeO3(0≤x≤0.15)呈典型的p型半导体。270℃操作温度下,掺杂x(Cd2+)为25%的LaFeO3材料(700℃下热处理4h)对浓度为4.5×10–5mol·dm–3的C2H5OH的灵敏度达81.5。有望开发为一类新型的酒敏传感器。     

Nd_2O_3掺杂(Sr_(0.9)Ba_(0.1))La_4Ti_4O_(15)陶瓷的结构及微波性能

采用传统的固相反应法制备(Sr_(0.9)Ba_(0.1))La_4Ti_4O_(15)+x%Nd_2O_3(质量分数0≤x≤8,BSN)系微波介质陶瓷,并对其物相组成、晶体结构及微波介电性能进行分析。研究结果表明,Nd_2O_3含量的增加降低了BSN陶瓷的烧结温度,陶瓷的主晶相为SrLa_4Ti_4O_(15)相,并伴随有少量第二相La_2TiO_5的生成。在微波频率下,随着Nd_2O_3含量的增加,BSN陶瓷的介电常数及谐振频率温度系数变化小,品质因数与频率之积(Q×f)值提高,优化出掺杂4%Nd_2O_3的(Sr_(0.9)Ba_(0.1))La_4Ti_4O_(15)陶瓷具有最佳微波介电性能:εr=43.2,Q×f=42 015 GHz(6.024 GHz),τf=-9.6μ℃-1。     

xCa_(0.8)Sr_(0.2)TiO_3-(1-x)Li_(0.5)La_(0.5)TiO_3系陶瓷介电性能的调控

采用烧成法制备了xCa_(0.8)Sr_(0.2)TiO_3-(1-x)Li_(0.5)La_(0.5)TiO_3(CST-LLT)(x=0.4~0.8)系介质陶瓷,表征了其物相组成、结构特征及介电性能。所制备的材料具有钙钛矿结构特征,随着Li_(0.5)La_(0.5)TiO_3组分的减少,1 170~1 260℃烧结的CST-LLT陶瓷介电常数(ε_r)变化范围在154.8~275.2,而品质因数(Q·f)在1 360~1 479GHz内先增加后逐渐减小,谐振频率温度系数(τ_f)变化范围为(-720.6~470.5)×10~(-6)/℃。当x=0.5,烧成温度为1 200℃,保温3h时,可得到理想的介电性能的介质陶瓷:ε_r=230,Q·f=1 455GHz,τ_f=24.5×10~(-6)/℃。     

La掺杂对Ca_(3-x)La_xCo_(3.9)Cu_(0.1)O_(9+δ)/Bi_2Ca_2Co_(1.9)Cu_(0.1)O_y复合热电材料的性能优化研究

采用助溶剂法和固相反应法分别合成Ca_(3-x)La_xCo_(3.9)Cu_(0.1)O_(9+δ)(0≤x≤0.16)和Bi_2Ca_2Co_(1.9)Cu_(0.1)O_y陶瓷粉体,通过热压烧结制备Ca_(3–x)La_xCo_(3.9)Cu_(0.1)O_(9+δ)/Bi_2Ca_2Co_(1.9)Cu_(0.1)O_y复合热电材料,研究了La掺杂对复合热电材料的微观结构、物相组成和热电性能的影响。结果表明:La掺杂复合热电材料的XRD谱与标准JCPDS卡保持一致,没有引进新的杂质;La掺杂样品的电导率和Seebeck系数同时增加,功率因子得到显著提高。在973 K时,Ca_(2.92)La_(0.08)Co_(3.9)Cu_(0.1)O_(9+δ)/Bi_2Ca_2Co_(1.9)Cu_(0.1)O_y样品的功率因子达到4.477×10~(–4 )W·m~(–1)·K~(–2)。     

退火温度对La_(1–x)Sr_xCo_(1–y)Fe_yO_3系薄膜NTC阻温特性的影响

利用La_(1–x)Sr_xCo_(1–y)Fe_yO_3(x=0.2,y=0.3)陶瓷靶材,通过真空射频磁控溅射在Al_2O_3基片上制备La_(0.8)Sr_(0.2)Co_(0.7)Fe_(0.3)O_3(LSCF)薄膜,然后在此基础上制备NTC热敏电阻。采用X射线衍射(XRD)分析了材料相的组成,扫描电子显微镜(SEM)分析观察薄膜材料的微观结构,电阻测试仪和四探针仪器测试薄膜的阻温特性,研究不同退火温度对LSCF薄膜室温电阻和材料常数(B值)的影响。结果表明,随着退火温度升高,LSCF薄膜方阻和B值都存在先减小后增大现象,具有显著的NTC阻温特性,其lnR-T~(–1)曲线具有良好的线性度。     

CaTiO3-(La,Nd)AlO3微波介质陶瓷的研究与应用

为了降低材料成本,研究了(1-x)CaTiO3-x(La1-yNdy)AlO3微波介质陶瓷的性能与组成之间的关系.采用固相法制备粉料,在1400℃下烧结,用XRD和SEM分析陶瓷的晶相组成和显微结构,采用闭腔法测量其微波介电性能.研究结果表明该陶瓷形成单一晶相固溶体,当x=0.35,y=0.286时,ε(r)=43,Q·f=30000GHz,τ?=5×10-6/℃.用该陶瓷制作了基站用环形介质谐振器,其性能如下:fo=2.122 0GHz,Q=12 436,fs/fo=1.220,与仿真结果非常吻合.     

CaTiO3-（La,Nd）AlO3微波介质陶瓷的研究与应用

为了降低材料成本,研究了(1–x)CaTiO3–x(La1–yNdy)AlO3微波介质陶瓷的性能与组成之间的关系。采用固相法制备粉料,在1 400℃下烧结,用XRD和SEM分析陶瓷的晶相组成和显微结构,采用闭腔法测量其微波介电性能。研究结果表明该陶瓷形成单一晶相固溶体,当x=0.35,y=0.286时,εr=43,Q.f=30 000 GHz,τf=5×10–6/℃。用该陶瓷制作了基站用环形介质谐振器,其性能如下:f0=2.122 0 GHz,Q=12 436,fs/f0=1.220,与仿真结果非常吻合。     

Effect of strontium nitride on the properties of Sr_2Si_5N_8:Eu~(2+) red phosphor

The nitride phosphor Sr_2Si_5N_8:Eu~(2+) was synthesized by the high temperature solid-state method.The properties of Sr_2Si_5N_8:Eu~(2+) were discussed by X-ray diffraction(XRD) scanning electron microscope(SEM) and spectra analysis.The XRD pattern shows that the single phase produces when strontium nitride is a bit excessive. The SEM photo implies that the excessive strontium nitride works as a flux in the reaction system.The position of emission peak is also located at about 612 nm as strontium nitrid...     

掺钇(Ba,Sr,Ca)TiO_3纳米粉体及细晶陶瓷的制备与性能

采用sol-gel法制备了Y3+掺杂Ba0.90Sr0.08Ca0.02TiO3(BSCT)纳米粉体及细晶陶瓷。通过TG-DTG、XRD、SEM和TEM对样品结构及形貌进行了表征,并测试了陶瓷的介电性能。研究表明,Y3+掺杂BSCT纳米粉体主要为立方相BaTiO3,烧结后陶瓷晶粒尺寸在0.68~2.24μm可控,Y3+掺杂可以抑制陶瓷晶粒的生长,使陶瓷的tC向低温方向移动。随Y3+掺杂量的增大,陶瓷的介电温谱εr-t趋于平缓,当x(Y3+)为7.0%时,陶瓷的室温εr大幅度提高到9 176。     

SrFCl：Sm^2＋中的Sm^3＋在光谱烧孔中的行为

本文研究了77K时SrFCl:Sm~(2+)在光谱烧孔过程中Sm~(2+)和Sm~(3+)的再分布,得出烧孔的最大总面积受材料中Sm~(3+)数量的限制,孔的最大总面积与Sm~(2+)非均匀线型内积分面积比等于材料中Sm~(3+)与Sm~(2+)含量比。     

Nd_(0.5)Sr_(0.5)Co_(1-x)Mn_xO_3的晶体结构和电磁性能研究

采用固相反应法制备了Nd0.5Sr0.5Co1–xMnxO3多晶样品(0≤x≤1)。利用X射线衍射仪和Rietveld方法精修程序分析了样品的晶体结构;对样品的磁性和电输运性能进行了测量。结果表明:样品均为斜方晶系单相结构,空间群为Imma。样品的晶格常数a、b、c,晶格平均扭曲率D和有效磁矩μeff随着Mn含量x的增加而增大,促使Co离子向高自旋态转变。在x≥0.6时,样品中Co离子都处于高自旋态。在样品中,Mn替代了Co,Mn—O—Co的反铁磁性超交换作用与Co3+—O2–—Co4+的铁磁性双交换作用相互竞争破坏了样品的金属导电行为,致使当x≥0.2时,样品表现出半导体导电行为。     

微波场作用下柠檬酸盐法合成阴极纳米粉体La_(0.8)Sr_(0.2)MnO_3

在微波场作用下,采用柠檬酸盐法合成了阴极粉体La0.8Sr0.2MnO3(LSM)。用TG-DTA、XRD、TEM、SEM和电化学工作站对产物形成过程、微观结构和电化学性能进行分析和表征。结果表明,LSM溶胶在微波处理后,850℃煅烧能够形成单一的钙钛矿型结构;粉体粒径约为30nm,远小于采用传统烘箱加热方式的200nm,所得粉体电催化活性高,其制得的单电池在800℃时的最大功率密度达到0.82W/cm2,开路电压达1.1V,而采用传统烘箱加热方式所制得单电池的最大功率密度仅为0.71W/cm2。     

Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

This paper investigates the feasibility of using a lanthanum oxide thin film (La_2O_3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La_2O_3 thickness. The thin La_2O_3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively.La_2O_3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 ℃ because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La_2O_3 thin film was thermally stable.The DC and RF characteristics of Pt/La_2O_3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined.The measurements indicated that the transistor with the Pt/La_2O_3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La_2O_3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.     

Enhanced Thermoelectric Properties of Cu2SnSe3 by (Ag,In)‐Co‐Doping

Dense bulk samples of (Ag,In)‐co‐doped Cu₂SnSe₃ have been prepared by a fast and one‐step method of combustion synthesis, and their thermoelectric properties have been investigated from 323 to 823 K. The experimental results show that Ag‐doping at Cu site remarkably enhances the Seebeck coefficient, reduces both electrical and thermal conductivities, and finally increases the figure of merit (ZT) value. The ZT of the Cu_1.85Ag_0.15SnSe₃ sample reaches 0.80 at 773 K, which is improved by about 70% compared with the unadulterated sample (ZT = 0.46 at 773 K). First principle calculation indicates that Ag‐doping changes the electronic structure of Cu₂SnSe₃ and results in larger effective mass of carriers, thus enhancing the Seebeck coefficient and reducing the electrical conductivity. The low electrical conductivity caused by Ag‐doping can be repaired by accompanying In‐doping at Sn site, and by (Ag,In)‐co‐doping the thermoelectric properties are further promoted. The (Ag,In)‐co‐doped sample of Cu_1.85Ag_0.15Sn_0.9In_0.1Se₃ shows the maximum ZT of 1.42 at 823 K, which is likely the best result for Cu₂SnSe₃‐based materials up to now. This work indicates that co‐doping may provide an effective solution to optimize the conflicting material properties for increasing ZT.     

Ba_(0.6)Sr_(0.4)TiO_3/ZnNb_2O_6复相陶瓷的显微结构和介电性能

采用传统电子陶瓷工艺制备了Ba_(0.6)Sr_(0.4)TiO_3/ZnNb_2O_6(BSTZ)复相陶瓷,研究了ZnNb_2O_6含量对BSTZ陶瓷结构和介电性能的影响规律.结果表明,BSTZ复相陶瓷可在较低温度下烧结成瓷;陶瓷中除了Ba_(0.6)Sr_(0.4)TiO_3和ZnNb_2O_6两种主晶相,还有新相BaNb_(3.6)O_(10)生成;陶瓷的介电常数和介电损耗均随ZnNb2O6含量的增加而降低;当x(ZnNb_2O_6)=0.6(摩尔比)时,复相陶瓷在微波下的介电常数为74,介电损耗为0.043,可调性可达10.54%(1.0 kV/mm).     

掺Y~（3＋）、La~（3＋）的（Sr，Ca）TiO_3系多功能陶瓷

用稀土离子Ｙ（３＋）、Ｌａ（３＋）对（Ｓｒ，Ｃａ）ＴｉＯ３掺杂，以Ｂａ－Ｓｉ－Ａｌ玻璃为助熔剂，在１３５０～１４５０℃还原性气氛中烧成，获得工艺性能良好、烧结温度较低、晶粒电阻率低（１０（－２）Ω·ｃｍ）、非线性高（α达１０以上）的陶瓷材料。在制备过程中省略了以往用碱金属离子涂覆并进行热扩散的工序。用缺陷化学理论，根据测量的ＩＣＴＳ谱、Ｉ－Ｖ特性和Ｃ－Ｖ特性系统研究了Ｙ（３＋）、Ｌａ（３＋）掺杂对晶粒半导化、压敏特性和介电特性的影响。热处理过程中，Ｏ－的化学吸附是这类陶瓷产生晶界势垒的主要原因。     

ZnMoO_4:Tb~(3+)绿色荧光粉的制备及发光特性研究

采用高温固相法制备了ZnMoO_4:Tb~(3+)绿色荧光粉,对样品进行了X射线衍射(XRD)和荧光光谱测定.XRD结果表明,样品在800℃时能得到单一ZnMoO_4相.激发光谱由1个宽带峰和若干个尖峰组成,宽带属于Mo~(6+)-O~(2-)电荷迁移吸收带(CT),并且发现宽带峰位随Tb~(3+)掺杂浓度增加而出现蓝移,尖峰属于Tb~(3+)的4f-4f跃迁,最强激发峰位于377 nm处.发射光谱由四组峰组成,最强发射峰在543 nm处,对应于Tb~(3+)的~5D_4-~7F_5跃迁,属于磁偶极跃迁.研究了ZnMoO_4:Tb~(3+)荧光粉在543 nm的主发射峰强度随Tb~(3+)掺杂浓度的变化情况.结果显示,随Tb~(3+)浓度的增加,发射峰强度先增大;当Tb~(3+)浓度x=0.15时,峰值强度最大;而后随Tb~(3+)浓度增加,峰值强度减小.荧光寿命测试得到Tb~(3+)的~5D_4-~7F_5跃迁发射的荧光寿命值为0.506 ms.光谱特性研究表明,ZnMoO_4:Tb~(3+)是一种可能应用在白光LED上的绿基色发光材料.