Fabrication of the monolithic polymer–metal microstructure by the backside exposure and electroforming technology

Monolithic polymer–metal microstructures can be fabricated on the silicon or glass substrate using two kinds of photoresists and electroforming technologies for the inkjet and microfluidic application. However, it suffers from the high shrinkage problem of first SU8 resist after exposure and post exposure baking. This paper reports a novel approach to solve the shrinkage problem by introducing backside exposure of first SU8 resist for the fabrication of the monolithic polymer–metal microstructure. In combination with the light absorption layer coating on the unexposed SU8 resist, metal seed layer deposition, frontside exposure for second JSR resist on the seed layer and the nickel (Ni) electroforming together with release process, we have demonstrated a high physical resolution of 1,200 dpi monolithic Ni nozzle plate with negligible shrinkage. It also has the advantages of low cost and high resolution for the improvement of the traditional bonding of polymer and metal nozzle plate, which is generally in need of a complex alignment to stick the metal nozzle plate and dry film polymer on the heating chip together.     

Combination of thick resist and electroforming technologies for monolithic inkjet application

This paper reports a novel method for fabricating a monolithic inkjet chip by combination of thick resist photolithography and electroforming technologies. It integrates two-step photolithography process by two kinds of thick photoresists, SU-8 and JSR, and one-step nickel electroplating process to form the channels, chambers and nozzles of monolithic inkjet chip. The nickel nozzle plate can be replaced by SU8 material as second thick SU8 resist is used. The first thick resist of SU8 for both kinds of nozzle plates, nickel and SU8, is used for the structure formation of ink channel and chamber. Followed the nickel or SU8 nozzle plates are fabricated on SU8 chambers. The nickel nozzle plate is performed by second thick resist JSR and electroforming process while the SU8 nozzle plate is only by second thick SU8 resist process. A light-absorbing polymer layer is coated between two thick resist layers for protecting the first SU8 layer from overheating during the metal seed layer deposition or over-exposure during the second thick resist lithography process. A prototype of monolithic inkjet chip with a 300 dpi resolution has been successfully demonstrated.This work is partially sponsored by National Science Council under contract No NSC 92-2212-E-006-125 and Industrial Technology Research Institute (ITRI) under contract No 03921012 in addition to MOEA 92-EC-2-A-17-0448. We pay our sincere thanks to the Southern Regional MEMS Center in National Cheng Kung University and Common Laboratory of the Microsystems Technology Center of Electronic Research Service Organization in Industrial Technology Research Institute for the access of process equipments. We also thank Mr. L.H. Wu for his technical assistant on the SEM instrument.     

Selection of mold materials for electroforming of monolithic two-layer microstructure

This paper reports the performance comparison of three kinds of thick photoresists (JSR THB-430 N, JSR THB-130 N, and SJR-5740) used as molds for electroforming of monolithic two-layer microstructure with the nickel nozzle plate on SU8 chambers. The proper selection of mold material is strong relevant to the surface quality of mold and nozzle. The rough surface of mold is made of the JSR THB-430N with high viscosity while the smooth surface of mold is made of the JSR THB-130N with low viscosity. The positive tone SJR-5740 resist is not also a good material for the electroforming mold due to the dimension distortion after development. Good quality of monolithic two-layer microstructure has been achieved by JSR THB-130 N mold for electroforming due to the smooth mold surface, good dimension control and easily removal by acetone.This work is sponsored by National Science Council under contract No NSC 92–2212-E-006–125. We pay our sincere thanks to the Southern Regional MEMS Center in National Cheng Kung University and Common Laboratory of the Microsystems Technology Center of Electronic Research Service Organization in Industrial Technology Research Institute for the access of process equipments.     

MEMS器件中多层金属薄膜溅射工艺研究

溅射工艺是制作微机电系统(MEMS)器件金属薄膜的主要方式,金属薄膜作为MEMS器件中的掩模层和功能层,要求薄膜应力小,粘附性、均匀性和可焊性好.通过对常用金属薄膜材料特性、多层金属薄膜溅射工艺和质量评价方法的研究得出了优化工艺的的方法,提高了多层金属薄膜的质量.     

A novel MEMS elastic-based dry electrode for electroencephalography measurement

Electroencephalogram (EEG) has been one of the important means to study brain functions and diseases. We fabricated an innovative MEMS elastic-based dry electrode using photolithography and electroforming process. The pitch of elastic-based dry electrode tip is 100 μm. We adopted polydimethylsiloxane as an elastic layer which provides the flexibility when the conductive layer and the electrode tip contact with the skin. This kind of dry electrode array does not need conductive gel during testing procedure. Compared with the traditional Ag/AgCl wet electrode, it greatly reduced the preparation time for EEG measurement and it could make the examinee more comfortable.     

Wafer-level bonding and direct electrical interconnection of stacked 3D MEMS by a hybrid low temperature process

The presented fabrication technology enables the direct integration of electrical interconnects during low temperature wafer bonding of stacked 3D MEMS and wafer-level packaging. The low temperature fabrication process is based on hydrophilic direct bonding of plasma activated Si/SiO₂ surfaces and the simultaneous interconnection of two metallization layers by eutectic bonding of ultra-thin AuSn connects. This hybrid wafer-level bonding and interconnection technology allows for the integration of metal interconnects and multiple materials in stacked MEMS devices. The process flow is successfully validated by fabricating test structures made out of a two wafer stack and featuring multiple ohmic electrical interconnects.     

High-aspect-ratio microstructural posts electroforming modeling and fabrication in LIGA process

This paper describes a theoretical model that predicts the metal ion concentration distribution during electroforming high aspect ratio microstructures (HARM). The applied current density and microstructure aspect ratio were found as two important factors that affect the electroforming outcome. The analytical results are verified using experiments that electroforming microstructural posts with an aspect ratio of 10. Good agreement was obtained between the experimental and analytical solutions. Based on the ion concentration analytical prediction on the cathode surface, one can estimate the electroforming time required for fabricating a microstructure for a given aspect ratio.     

A W‐band RF‐MEMS switched LNA in a 70 nm mHEMT process

This work presents a monolithic integrated reconfigurable active circuit consisting of a W‐band RF micro‐electro‐mechanical‐systems (MEMS) Dicke switch network and a wideband low‐noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF‐MEMS LNA has a measured gain of 10.2–15.6 dB and 1.3–8.2 dB at 79–96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three‐stage LNA used in this design the measured in‐band noise figure (NF) of MEMS switched LNA is minimum 1.6 dB higher. To the authors’ knowledge, the experimental results represent a first time demonstration of a W‐band MEMS switched LNA monolithic microwave integrated circuit (MMIC) in a GaAs foundry process with a minimum NF of 5 dB. The proposed novel integration of such MEMS switched MMICs can enable more cost‐effective ways to realize high‐performance single‐chip mm‐wave reconfigurable radiometer front‐ends for space and security applications, for example. © 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:639–646, 2015.     

Fabrication of high hardness Ni mold with electroless nickel–boron thin layer

The nickel electroforming method using a high-concentration nickel sulfamate bath is commonly used to fabricate micro metal molds in the LIGA process; however, this method does not produce micro metal molds of sufficient hardness. One means of improving the hardness of micro metal molds made using the nickel electroforming method is to include additives in the nickel plating solution. Another method is nickel alloy plating or a similar technique. In this research, we used a nickel–boron (Ni–B) electroless alloy plating method to obtain a hard nickel plated film having hardness of 832 Hv. It was also ascertained that Ni–B electroless alloy plated film retains its high hardness even during heat treatment in conditions of 250°C for 1 h. To deal with the high stresses developed in high-hardness plated films, we proposed double-layer nickel electroforming. This method is covered and used on conventional nickel electroforming layer by high hardness micro mold. High hardness micro metal mold using double-layer was fabricated by nickel electroforming and Ni–B electroless alloy plating method.     

Inductively‐loaded RF MEMS reconfigurable filters

This article presents an inductively loaded radio frequency (RF) microelectromechanical systems (MEMS) reconfigurable filter with spurious suppression implemented using packaged metal‐contact switches. Both simulation and measurement results show a two‐state, two‐pole 5% filter with a tuning range of 17% from 1.06 GHz to 1.23 GHz, an insertion loss of 1.56–2.28 dB and return loss better than 13 dB over the tuning range. The spurious passband response in both states is suppressed below ?20 dB. The unloaded Q of the filter changes from 127 to 75 as the filter is tuned from 1.06 GHz to 1.23 GHz. The design and full‐wave simulation of a two‐bit RF MEMS tunable filter with inductively loaded resonators and monolithic metal‐contact MEMS switches is also presented to prove the capability of applying the inductive‐loading technique to multibit reconfigurable filters. The simulation results for a two‐bit reconfigurable filter show 2.5 times improvement in the tuning range compared with the two‐state reconfigurable filter due to lower parasitics associated with monolithic metal‐contact MEMS switches in the filter structure. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.     

单片集成MEMS技术

介绍了单片集成MEMS技术相对传统混合(hybrid)方法的优势;分析了单片集成MEMS技术实现的难点,同时,给出了目前与CMOS工艺兼容的多种单片集成MEMS的技术特点、工艺流程;详细阐述了目前各种post CMOS技术。最后,给出单片集成MEMS技术的未来发展趋势。     

K波段单片硅MEMS谐振器

介绍了基片集成波导技术和ICP深刻蚀微机械通孔阵列的硅基MEMS谐振器,通孔阵列和地平面形成不辐射介质波导,采用CPW电流探针与谐振腔进行信号耦合,在单层硅片上实现了平面电路与三维硅填充谐振腔的信号传输,得到低成本高性能可与平面电路集成的MEMS谐振器.谐振器工作于主模TE101模式,在片测试的Q值大于180,谐振频率21 GHz,与仿真结果吻合,芯片尺寸为4.7 mm×4.6 mm×0.5 mm.     

Various replication techniques for manufacturing three-dimensional metal microstructures

 In microsystem technology a large range of different 6materials will be available only after the necessary micromanufacturing techniques have been developed or adapted. Existing manufacturing techniques are structuring or shaping techniques producing three-dimensional microstructures out of silicon (silicon etching, silicon surface micromechanics), mostly unfilled plastics (lithographic techniques, injection molding, hot embossing, reaction molding) or a few pure metals or binary alloys (electroforming). The choice of materials for microcomponents is determined by the function and conditions of use of microsystems. Especially the range of metals is still restricted considerably because the only processes available are electroforming and thin-layer techniques. It is for these reasons that we are developing various processes for manufacturing three-dimensional metal microstructures. In addition to direct electroforming of injection molding lost plastic micromolds, these are a new microcasting process and Micro Metal Injection Molding (Micro MIM). Microstructures have already been molded from mold inserts made by micromechanical cutting or by the LIGA technique. The results achieved, and future prospects, are outlined below. Received: 25 August 1997/Accepted: 3 September 1997     

High aspect ratio micromachining (HARM) technologies for microinertial devices

 In this paper, we review work on novel, high aspect processes for microinertial components at the Defence Evaluation and Research Agency (DERA). High aspect components may lead to significant cost-performance improvements in both accelerometers and gyroscopes. We have evaluated 3 low temperature process technologies – silicon on insulator (SOI) HARM, UV electroforming and bulk HARM. Prototype microinertial devices fabricated in these technologies are also presented. The potential of the processes for integration with on-chip CMOS electronics is assessed which may be either as part of a fully integrated MEMS process or as “value-added” post-processing on commercial CMOS wafers. Bonded SOI (BSOI) materials has been specially designed for micromachining applications to give a low stress material that is optimised for a sacrificial release process. Trench isolation is achieved by deep dry etching to the buried dielectric. These trenches may be refilled to allow metallisation to reach isolated components. Structures with aspect ratios of up to 50:1 have been realised using a combination of photolithography, deposition and deep dry etching. CMOS compatibility has been demonstrated. The process is an attractive manufacturing technology. Electroforming of nickel in resist moulds formed using conventional UV photolithography has also been investigated. Some of the early limitations with this technology have been overcome by using a new resist technology, SU8. The process needs to mature further, but remains a promising candidate. Bulk HARM uses deep dry etching of a bulk silicon membrane which is defined using wet etching. Device isolation is difficult and process control complex making this the least attractive of the technologies.     

Polymer-based cantilevers with integrated electrodes

An innovative release method of polymer cantilevers with embedded integrated metal electrodes is presented. The fabrication is based on the lithographic patterning of the electrode layout on a wafer surface, covered by two layers of SU-8 polymer: a 10-/spl mu/m-thick photo-structured layer for the cantilever, and a 200-/spl mu/m-thick layer for the chip body. The releasing method is based on dry etching of a 2-/spl mu/m-thick sacrificial polysilicon layer. Devices with complex electrode layout embedded in free-standing 500-/spl mu/m-long and 100-/spl mu/m-wide SU-8 cantilever were fabricated and tested. We have optimized major fabrication steps such as the optimization of the SU-8 chip geometry for reduced residual stress and for enhanced underetching, and by defining multiple metal layers [titanium (Ti), aluminum (Al), bismuth (Bi)] for improved adhesion between metallic electrodes and polymer. The process was validated for a miniature 2/spl times/2 /spl mu/m/sup 2/ Hall-sensor integrated at the apex of a polymer microcantilever for scanning magnetic field sensing. The cantilever has a spring constant of /spl cong/1 N/m and a resonance frequency of /spl cong/17 kHz. Galvanometric characterization of the Hall sensor showed an input/output resistance of 200/spl Omega/, a device sensitivity of 0.05 V/AT and a minimum detectable magnetic flux density of 9 /spl mu/T/Hz/sup 1/2/ at frequencies above 1 kHz at room temperature. Quantitative magnetic field measurements of a microcoil were performed. The generic method allows for a stable integration of electrodes into polymers MEMS and it can readily be used for other types of microsensors where conducting metal electrodes are integrated in cantilevers for advanced scanning probe sensing applications.     

Fabrication of a freestanding micro mechanical structure using electroplated thick metal with a HAR SU-8 mold

In this thesis, fabrication technology of a freestanding micro mechanical structure using electroplated thick metal with a high-aspect-ratio SU-8 mold was studied. A cost-effective fabrication process using electroplating with the SU-8 mold was developed without expensive equipment and materials such as deep reactive-ion etching (DRIE) or a silicon-on-insulator (SOI) wafer. The process factors and methods for the removal of SU-8 were studied as a key technique of the thick metal micro mechanical structure. A novel method that removes cross-linked SU-8 completely without leaving remnants of the resist or altering the electroplated microstructure was utilized. The experimental data pertaining to the relationship between the geometric features and the parameters of the removal process are summarized. Based on the established SU-8 removal process, an electroplated nickel comb structure with high-aspect-ratio SU-8 mold was fabricated in a cost-effective manner. In addition, a freestanding micro mechanical structure without a sacrificial layer was successfully realized. The in-plane free movements of the released freestanding structure are demonstrated by electromagnetic actuation. This research implies that various types of MEMS devices can be developed at a low-cost with design flexibility.     

Fabrication method of two-level polymeric microstructure with the help of deep X-ray lithography

Two- or multi-level microstructures are getting more important in several applications such as multi-component micro optical elements and various microfluidic systems. In the present study, a simple and efficient method is newly proposed for a fabrication of the two-level polymeric microstructures. Making a mother two-level microstructure consists of two processes: (1) the hot embossing process for a fabrication of microstructures on a PMMA substrate, and (2) the deep X-ray lithography using the hot embossed substrate for a high aspect ratio microstructure fabrication, resulting in a high aspect ratio microstructure containing smaller microstructures on its surface. Making use of so fabricated two-level microstructures as a mother structure, one could achieve a mass replication of the same microstructures via injection molding process with a metallic mold insert obtained by a nickel electroforming onto the mother microstructure. In order to demonstrate the proposed method, a polymeric high aspect ratio microstructure having smaller square microstructures on its top surface was fabricated. The fabricated two-level microstructure shows fine vertical sidewalls, which is a characteristic feature of the deep X-ray lithography. In addition, a metallic mold insert for a mass replication was fabricated by a nickel electroforming process.     

Design and process considerations for fabricating RF MEMS switches on printed circuit boards

Design considerations and process development for fabricating radio frequency microelectromechanical systems (RF MEMS) switches on microwave laminate printed circuit boards (PCBs) are presented in details in this work. Two key processes, high-density inductively coupled plasma chemical vapor deposition (HDICP CVD) for low-temperature silicon nitride deposition, and compressive molding planarization (COMP) have been developed for fabricating RF MEMS switches on PCB. The effects of process conditions of HDICP CVD on low-temperature nitride film are fully characterized for its use in RF MEMS switches on PCB. Not only can COMP planarize the surface of the photoresist for lithographic patterning over topologically complex surfaces, but also simultaneously create a membrane relief pattern on the surface of a MEMS structure. Several membrane-type capacitive switches have been fabricated showing excellent RF performance and dynamic responses similar to those on semiconductor substrates. This technology promises the potential of enabling further monolithic integration of switches with other RF components, such as antennas, microwave monolithic integrated circuits (MMICs), phase shifters, tunable filters, and transmission lines on the same PCBs reducing the losses due to impedance mismatching from components/system assembly and simplifies the design of the whole RF system. [1416].     

Electropolishing as a method for deburring high aspect ratio nickel RF MEMS

High aspect ratio nickel radio frequency microelectromechanical systems (RF MEMS) were fabricated by X-ray lithography and electroplating. Control of growth during electroforming of micro components is in general a problem in terms of achieving homogeneous thickness due to a non-uniform current distribution across a layout. It is necessary to level the deposited layer by means of a lapping process which results in burr formation. To ensure the functional properties of the devices these burrs have to be removed. Electropolishing with a current density of 80 A/dm² is used for burr removal from nickel micro components containing small width (~10 μm) structural elements. The investigated metal removal rates range from 0.2 to 1.8 μm/s depending on burr formation, presence or absence of resist and device position in the layout during electropolishing. Furthermore, edge rounding, a common electropolishing effect, is only observed when electropolishing in the absence of resist.     

A programmable VLSI retina for rough vision

A VLSI retina is a device that intimately associates an optoelectronic layer with processing facilities on a monolithic circuit. Combining acquisition and processing provides a better balance between between data flows and bandwidths. It is also expected to reveal fruitful shortcuts between microelectronic phenomena and vision-oriented information processing. Yet, except for simplistic environments and applications, analog hardware will not suffice to process and compact the raw image flow from photosensitive arrays. To solve this output problem, an on-chip array of bare boolean processors can be used to provide versatility from programmability. Since the monolithic constraint implies a memory shortage, the abilities of such a retina will be limited to a rough type of vision, but specific algorithmic techniques can cope with it. We have used shift registers with some tricky circuitry to build a minimal retina boolean processor with less than 30 transistors. The successful integration and testing of and experimentation with such a 65×76 retina are presented.