共查询到20条相似文献，搜索用时 15 毫秒
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Dechao Geng Xiaoxu Zhao Ke Zhou Wei Fu Zhiping Xu Stephen J. Pennycook Lay Kee Ang Hui Ying Yang 《Advanced Materials Interfaces》2019,6(1)
The self‐assembly into highly ordered pattern is a universal phenomenon with unprecedented natural properties. However, the nonequilibrium processes in complex systems demand rigorous molecular formation mechanism, which are highly important for fundamental research. Herein, a large‐scale formation of highly self‐assembly hierarchical hexagonal boron nitride (h‐BN) superordered structures on a liquid Cu surface by the chemical vapor deposition (CVD) method is demonstrated. The hierarchical h‐BN superordered structure is found to be composed of two vertical stacking parts: one part is underneath h‐BN film and the other part is top orientated branched h‐BN patterns. In addition, the size, orientation, and morphology of the h‐BN superordered structures can be precisely tuned by varying the gas flow rate and growth time. A kinetics‐limited growth mechanism is proposed to elucidate the formation process, owing a well consistency with experimental results. Further, by mechanically peeling off the top few‐layer h‐BN, centimeter‐scale uniform monolayer h‐BN film is produced, demonstrating a direct and facile top‐down fabrication method. This synthesis of highly ordered hierarchical h‐BN patterns and following uniform monolayer h‐BN film can be applied to other 2D materials, paving way for great potential in the investigation of growth mechanism and construction of homo‐ and heterostructures. 相似文献
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AbstractResistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current–voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal–insulator–metal junctions. Silver nanoparticles prepared via the polyol process and coated with an insulating polymer layer of tetraethylene glycol were deposited onto silicon oxide substrates. Activation required a forming step achieved through application of a bias voltage. Once activated, the nanoparticle films exhibited controllable resistive switching between multiple discrete low resistance states that depended on operational parameters including the applied bias voltage, temperature and sweep frequency. The films’ resistance switching behavior is shown here to be the result of nanofilament formation due to formative electromigration effects. Because of their tunable and distinct resistance states, scalability and ease of fabrication, nanoparticle films have a potential place in memory technology as resistive random access memory cells. 相似文献
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Eric J Sandouk James K Gimzewski Adam Z Stieg 《Science and Technology of Advanced Materials》2015,16(4)
Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current–voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal–insulator–metal junctions. Silver nanoparticles prepared via the polyol process and coated with an insulating polymer layer of tetraethylene glycol were deposited onto silicon oxide substrates. Activation required a forming step achieved through application of a bias voltage. Once activated, the nanoparticle films exhibited controllable resistive switching between multiple discrete low resistance states that depended on operational parameters including the applied bias voltage, temperature and sweep frequency. The films’ resistance switching behavior is shown here to be the result of nanofilament formation due to formative electromigration effects. Because of their tunable and distinct resistance states, scalability and ease of fabrication, nanoparticle films have a potential place in memory technology as resistive random access memory cells. 相似文献
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Julian A. Michaels Derek R. Wood Paul J. Froeter Wen Huang Dane J. Sievers Xiuling Li 《Advanced Materials Interfaces》2019,6(21)
Strain‐induced self‐rolled‐up membranes (S‐RuM) are structures formed spontaneously by releasing a strained layer or layer stacks from its mechanical support, with unique applications in passive photonics, electronics, and bioengineering. Depending on the thermal properties of the strained layers, these structures can experience various thermally induced deformations. These deformations can be avoided and augmented with the addition of strategically placed perforations in the membrane. This study reports on the use of perforations to modify the thermal effects on strained silicon nitride S‐RuM structures. A programmable fuse with well‐defined thermal threshold, ultrasmall footprint, and 2–3 V voltage rating is demonstrated, which can potentially serve as an on‐chip sensing device for power electronic circuits. 相似文献
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Zhong Sun Elia Ambrosi Alessandro Bricalli Daniele Ielmini 《Advanced materials (Deerfield Beach, Fla.)》2018,30(38)
Brain‐inspired neural networks can process information with high efficiency, thus providing a powerful tool for pattern recognition and other artificial intelligent tasks. By adopting binary inputs/outputs, neural networks can be used to perform Boolean logic operations, thus potentially surpassing complementary metal–oxide–semiconductor logic in terms of area efficiency, execution time, and computing parallelism. Here, the concept of stateful neural networks consisting of resistive switches, which can perform all logic functions with the same network topology, is introduced. The neural network relies on physical computing according to Ohm's law, Kirchhoff 's law, and the ionic migration within an output switch serving as the highly nonlinear activation function. The input and output are nonvolatile resistance states of the devices, thus enabling stateful and cascadable logic operations. Applied voltages provide the synaptic weights, which enable the convenient reconfiguration of the same circuit to serve various logic functions. The neural network can solve all two‐input logic operations with just one step, except for the exclusive‐OR (XOR) needing two sequential steps. 1‐bit full adder operation is shown to take place with just two steps and five resistive switches, thus highlighting the high efficiencies of space, time, and energy of logic computing with the stateful neural network. 相似文献
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Mrinal K. Hota Mohamed N. Hedhili Nimer Wehbe Martyn A. McLachlan Husam N. Alshareef 《Advanced Materials Interfaces》2016,3(18)
Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. 相似文献
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Memory Arrays: Skin‐Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture (Adv. Mater. 8/2016) 
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下载免费PDF全文 Bowen Zhu Hong Wang Yaqing Liu Dianpeng Qi Zhiyuan Liu Hua Wang Jiancan Yu Matthew Sherburne Zhaohui Wang Xiaodong Chen 《Advanced materials (Deerfield Beach, Fla.)》2016,28(8):1526-1526
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Hong Wang Bowen Zhu Xiaohua Ma Yue Hao Xiaodong Chen 《Small (Weinheim an der Bergstrasse, Germany)》2016,12(20):2715-2719
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Memory Devices: Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory (Adv. Mater. 48/2016) 下载免费PDF全文
下载免费PDF全文 Sen Liu Nianduan Lu Xiaolong Zhao Hui Xu Writam Banerjee Hangbing Lv Shibing Long Qingjiang Li Qi Liu Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2016,28(48):10809-10809
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Xiaobing Yan Yifei Pei Huawei Chen Jianhui Zhao Zhenyu Zhou Hong Wang Lei Zhang Jingjuan Wang Xiaoyan Li Cuiya Qin Gong Wang Zuoao Xiao Qianlong Zhao Kaiyang Wang Hui Li Deliang Ren Qi Liu Hao Zhou Jingsheng Chen Peng Zhou 《Advanced materials (Deerfield Beach, Fla.)》2019,31(7)
With the advent of the era of big data, resistive random access memory (RRAM) has become one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of information. However, the switching voltage of the RRAM MDs shows a very broad distribution due to the random formation of the conductive filaments. Here, self‐assembled lead sulfide (PbS) quantum dots (QDs) are used to improve the uniformity of switching parameters of RRAM, which is very simple comparing with other methods. The resistive switching (RS) properties of the MD with the self‐assembled PbS QDs exhibit better performance than those of MDs with pure‐Ga2O3 and randomly distributed PbS QDs, such as a reduced threshold voltage, uniformly distributed SET and RESET voltages, robust retention, fast response time, and low power consumption. This enhanced performance may be attributed to the ordered arrangement of the PbS QDs in the self‐assembled PbS QDs which can efficiently guide the growth direction for the conducting filaments. Moreover, biosynaptic functions and plasticity, are implemented successfully in the MD with the self‐assembled PbS QDs. This work offers a new method of improving memristor performance, which can significantly expand existing applications and facilitate the development of artificial neural systems. 相似文献
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《Advanced Materials Interfaces》2018,5(9)
Protein–nanoparticle (P–NP) interactions are of great importance in the biomedical applications, and are extensively studied for biotechnology and biomedicine applications, for example, cancer therapy, drug delivery, as well as biosafety area. Here, it is shown that P–NP interactions can have applications as resistive memory. It is demonstrated that the nature of resistive switching changes from programmable memory to read‐only memory when the NPs aggregate in the protein. The memory properties can be tuned by just changing the degree of agglomeration in P–NP solutions, so it has great potential to be used in configurable memory devices. This type of memory is also biocompatible, because it uses natural protein. 相似文献