Architecting Graphene Oxide Rolled‐Up Micromotors: A Simple Paper‐Based Manufacturing Technology

A graphene oxide rolled‐up tube production process is reported using wax‐printed membranes for the fabrication of on‐demand engineered micromotors at different levels of oxidation, thickness, and lateral dimensions. The resultant graphene oxide rolled‐up tubes can show magnetic and catalytic movement within the addition of magnetic nanoparticles or sputtered platinum in the surface of graphene‐oxide‐modified wax‐printed membranes prior to the scrolling process. As a proof of concept, the as‐prepared catalytic graphene oxide rolled‐up micromotors are successfully exploited for oil removal from water. This micromotor production technology relies on an easy, operator‐friendly, fast, and cost‐efficient wax‐printed paper‐based method and may offer a myriad of hybrid devices and applications.     

Postsynthesis of h‐BN/Graphene Heterostructures Inside a STEM

Combinations of 2D materials with different physical properties can form heterostructures with modified electrical, mechanical, magnetic, and optical properties. The direct observation of a lateral heterostructure synthesis is reported by epitaxial in‐plane graphene growth from the step‐edge of hexagonal BN (h‐BN) within a scanning transmission electron microscope chamber. Residual hydrocarbon in the chamber is the carbon source. The growth interface between h‐BN and graphene is atomically identified as largely N–C bonds. This postgrowth method can form graphene nanoribbons connecting two h‐BN domains with different twisting angles, as well as isolated carbon islands with arbitrary shapes embedded in the h‐BN layer. The electronic properties of the vertically stacked h‐BN/graphene heterostructures are investigated by electron energy‐loss spectroscopy (EELS). Low‐loss EELS analysis of the dielectric response suggests a robust coupling effect between the graphene and h‐BN layers.     

Thinnest Nonvolatile Memory Based on Monolayer h‐BN

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub‐nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h‐BN), a typical 2D insulator, is reported. The h‐BN atomristors are studied using different electrodes and structures, featuring forming‐free switching in both unipolar and bipolar operations, with large on/off ratio (up to 10⁷). Moreover, fast switching speed (<15 ns) is demonstrated via pulse operation. Compared with monolayer TMDs, the one‐atom‐thin h‐BN sheet reduces the vertical scaling to ≈0.33 nm, representing a record thickness for memory materials. Simulation results based on ab‐initio method reveal that substitution of metal ions into h‐BN vacancies during electrical switching is a likely mechanism. The existence of NVRS in monolayer h‐BN indicates fruitful interactions between defects, metal ions and interfaces, and can advance emerging applications on ultrathin flexible memory, printed electronics, neuromorphic computing, and radio frequency switches.     

Ultralong‐Discharge‐Time Biobattery Based on Immobilized Enzymes in Bilayer Rolled‐Up Enzymatic Nanomembranes

Glucose biofuel cells (GBFCs) are highly promising power sources for implantable biomedical and consumer electronics because they provide a high energy density and safety. However, it remains a great challenge to combine their high power density with reliable long‐term stability. In this study, a novel GBFC design based on the enzyme biocatalysts glucose dehydrogenase, diaphorase, and bilirubin oxidase immobilized in rolled‐up titanium nanomembranes is reported. The setup delivers a maximum areal power density of ≈3.7 mW cm^?2 and a stable power output of ≈0.8 mW cm^?2. The power discharges over 452 h, which is considerably longer than reported previously. These results demonstrate that the GBFC design is in principle a feasible and effective approach to solve the long‐term discharge challenge for implantable biomedical device applications.     

Hybrid Flexible Resistive Random Access Memory‐Gated Transistor for Novel Nonvolatile Data Storage

Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three‐layered structure is fabricated by utilizing solution‐processed MoS₂ nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene‐based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well‐defined memory window. Compared to the reference flash memory device based on the MoS₂ floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM‐gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well‐defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high‐performance flexible electronics.     

Polymer‐Based Resistive Memory Materials and Devices

Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D‐stacking capability, and large capacity for data storage, polymer‐based resistive memories have been a promising alternative or supplementary devices to conventional inorganic semiconductor‐based memory technology, and attracted significant scientific interest as a new and promising research field. In this review, we first introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer‐based resistive memory devices. Subsequently, the research progress concerning the use of single polymers or polymer composites as active materials for resistive memory devices has been summarized and discussed. In particular, we consider a rational approach to their design and discuss how to realize the excellent memory devices and understand the memory mechanisms. Finally, the current challenges and several possible future research directions in this field have also been discussed.     

High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random‐access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo‐metal halide perovskite materials have demonstrated outstanding memory properties, such as a low‐voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single‐step spin‐coating method for fabricating unipolar resistive memory devices in a cross‐bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 10⁸ with a relatively low operation voltage, a large endurance, and long retention times. The high‐yield device fabrication based on the solution‐process demonstrated here will be a step toward achieving low‐cost and high‐density practical perovskite memory devices.