Ionic‐Activated Chemiresistive Gas Sensors for Room‐Temperature Operation

The development of high performance gas sensors that operate at room temperature has attracted considerable attention. Unfortunately, the conventional mechanism of chemiresistive sensors is restricted at room temperature by insufficient reaction energy with target molecules. Herein, novel strategy for room temperature gas sensors is reported using an ionic‐activated sensing mechanism. The investigation reveals that a hydroxide layer is developed by the applied voltages on the SnO₂ surface in the presence of humidity, leading to increased electrical conductivity. Surprisingly, the experimental results indicate ideal sensing behavior at room temperature for NO₂ detection with sub‐parts‐per‐trillion (132.3 ppt) detection and fast recovery (25.7 s) to 5 ppm NO₂ under humid conditions. The ionic‐activated sensing mechanism is proposed as a cascade process involving the formation of ionic conduction, reaction with a target gas, and demonstrates the novelty of the approach. It is believed that the results presented will open new pathways as a promising method for room temperature gas sensors.     

Self‐Formed Channel Devices Based on Vertically Grown 2D Materials with Large‐Surface‐Area and Their Potential for Chemical Sensor Applications

2D layered materials with sensitive surfaces are promising materials for use in chemical sensing devices, owing to their extremely large surface‐to‐volume ratios. However, most chemical sensors based on 2D materials are used in the form of laterally defined active channels, in which the active area is limited to the actual device dimensions. Therefore, a novel approach for fabricating self‐formed active‐channel devices is proposed based on 2D semiconductor materials with very large surface areas, and their potential gas sensing ability is examined. First, the vertical growth phenomenon of SnS₂ nanocrystals is investigated with large surface area via metal‐assisted growth using prepatterned metal electrodes, and then self‐formed active‐channel devices are suggested without additional pattering through the selective synthesis of SnS₂ nanosheets on prepatterned metal electrodes. The self‐formed active‐channel device exhibits extremely high response values (>2000% at 10 ppm) for NO₂ along with excellent NO₂ selectivity. Moreover, the NO₂ gas response of the gas sensing device with vertically self‐formed SnS₂ nanosheets is more than two orders of magnitude higher than that of a similar exfoliated SnS₂‐based device. These results indicate that the facile device fabrication method would be applicable to various systems in which surface area plays an important role.     

Superior Self‐Powered Room‐Temperature Chemical Sensing with Light‐Activated Inorganic Halides Perovskites

Hybrid halide perovskite is one of the promising light absorber and is intensively investigated for many optoelectronic applications. Here, the first prototype of a self‐powered inorganic halides perovskite for chemical gas sensing at room temperature under visible‐light irradiation is presented. These devices consist of porous network of CsPbBr₃ (CPB) and can generate an open‐circuit voltage of 0.87 V under visible‐light irradiation, which can be used to detect various concentrations of O₂ and parts per million concentrations of medically relevant volatile organic compounds such as acetone and ethanol with very quick response and recovery time. It is observed that O₂ gas can passivate the surface trap sites in CPB and the ambipolar charge transport in the perovskite layer results in a distinct sensing mechanism compared with established semiconductors with symmetric electrical response to both oxidizing and reducing gases. The platform of CPB‐based gas sensor provides new insights for the emerging area of wearable sensors for personalized and preventive medicine.     

Tailoring Thin‐Film Piezoelectrics for Crash Sensing

Crash sensing and its assessment play a pivotal role in autonomous vehicles for preventing fatal casualties. Existing crash sensors are severely bottlenecked by sluggish response time, rigid mechanical components, and space constraints. Miniaturized sensors embedded with custom‐tailored nanomaterials upholds potential to overcome these limitations. In this article, piezoelectric Zinc‐Oxide thin film as a crash sensing layer is integrated onto a flexible metal‐alloy cantilever. Material characterization studies are conducted to confirm piezoelectric property of sputtered ZnO film. The piezoelectric d ₃₁ coefficient value of ZnO film was 7.2 pm V^–1. The ZnO sensing element is firmly mounted on a scaled car model and used in a crash sensing experimental set‐up. A comprehensive theoretical analysis for two different real scenarios (nearly elastic and nearly inelastic collision) of crash events followed by experimental study is discussed. The crash sensor's output exhibits a linear relationship with magnitude of impact forces experienced at crash events. The response time of ZnO crash sensor is 18.2 ms, and it exhibits a sensitivity of 28.7 mV N^–1. The developed crash sensor has potential to replace bulk material sensors owing to its faster response time, high sensitivity, and compactness as the demand for crash sensors in next‐generation automobile industries is progressively growing.     

A New Strategy for Humidity Independent Oxide Chemiresistors: Dynamic Self‐Refreshing of In2O3 Sensing Surface Assisted by Layer‐by‐Layer Coated CeO2 Nanoclusters

The humidity dependence of the gas sensing characteristics of metal oxide semiconductors has been one of the greatest obstacles for gas sensor applications during the last five decades because ambient humidity dynamically changes with the environmental conditions. Herein, a new and novel strategy is reported to eliminate the humidity dependence of the gas sensing characteristics of oxide chemiresistors via dynamic self‐refreshing of the sensing surface affected by water vapor chemisorption. The sensor resistance and gas response of pure In₂O₃ hollow spheres significantly change and deteriorate in humid atmospheres. In contrast, the humidity dependence becomes negligible when an optimal concentration of CeO₂ nanoclusters is uniformly loaded onto In₂O₃ hollow spheres via layer‐by‐layer (LBL) assembly. Moreover, In₂O₃ sensors LBL‐coated with CeO₂ nanoclusters show fast response/recovery, low detection limit (500 ppb), and high selectivity to acetone even in highly humid conditions (relative humidity 80%). The mechanism underlying the dynamic refreshing of the In₂O₃ sensing surfaces regardless of humidity variation is investigated in relation to the role of CeO₂ and the chemical interaction among CeO₂, In₂O₃, and water vapor. This strategy can be widely used to design high performance gas sensors including disease diagnosis via breath analysis and pollutant monitoring.     

Efficient Self‐Driven Photodetectors Featuring a Mixed‐Dimensional van der Waals Heterojunction Formed from a CdS Nanowire and a MoTe2 Flake

Heterojunctions formed from low‐dimensional materials can result in photovoltaic and photodetection devices displaying exceptional physical properties and excellent performance. Herein, a mixed‐dimensional van der Waals (vdW) heterojunction comprising a 1D n‐type Ga‐doped CdS nanowire and a 2D p‐type MoTe₂ flake is demonstrated; the corresponding photovoltaic device exhibits an outstanding conversion efficiency of 15.01% under illumination with white light at 650 µW cm^?2. A potential difference of 80 meV measured, using Kelvin probe force microscopy, at the CdS–MoTe₂ interface confirms the separation and accumulation of photoexcited carriers upon illumination. Moreover, the photodetection characteristics of the vdW heterojunction device at zero bias reveal a rapid response time (<50 ms) and a photoresponsivity that are linearly proportional to the power density of the light. Interestingly, the response of the vdW heterojunction device is negligible when illuminated at 580 nm; this exceptional behavior is presumably due to the rapid rate of recombination of the photoexcited carriers of MoTe₂. Such mixed‐dimensional vdW heterojunctions appear to be novel design elements for efficient photovoltaic and self‐driven photodetection devices.     

TiO2‐Decorated Graphite Nanoplatelet Nanocomposites for High‐Temperature Sensor Applications

Temperature and/or composition mapping inside high temperature energy conversion and storage devices are challenging, yet of critical importance to improve the material design for optimum performance. Here, the great potential of TiO₂ nanoparticle (NP)‐decorated graphite nanoplatelet (GNP) nanocomposites as high temperature thermal senors or gas sensors is reported. Effects of the GNP substrate on phonon confinement in Raman spectrum, grain growth, and phase stability of anatase TiO₂ NPs at high temperatures are systematically studied. Thermally sensitive Raman signatures, indicating the ultrafast grain growth of TiO₂ NPs in response to short thermal shock treatments (0.1–25 s) at high temperatures, are exploited for high temperature thermal sensing applications. A very high accuracy of nearly 98% in temperature measurements is demonstrated for a given short‐time thermal exposure. Thermal stability of anatase TiO₂ NPs against transformation into the rutile phase in TiO₂‐GNP nancomposites is substantially increased by controlling the surface area of the substrate, which would significantly improve the performance of TiO₂‐based high temperature gas sensors.     

UV–Ozone Interfacial Modification in Organic Transistors for High‐Sensitivity NO2 Detection

A new type of nitrogen dioxide (NO₂) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low‐cost UV–ozone (UVO)‐treated polymeric gate dielectric is reported here. The NO₂ sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO₂] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO₂] = 1 ppm with the UVO‐treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X‐ray diffraction, X‐ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO‐derived hydroxylated species on the dielectric surface and not from chemical reactions between NO₂ and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high‐performance TFT‐based gas sensors.     

Exceptional High‐Performance of Pt‐Based Bimetallic Catalysts for Exclusive Detection of Exhaled Biomarkers

Achieving an improved understanding of catalyst properties, with ability to predict new catalytic materials, is key to overcoming the inherent limitations of metal oxide based gas sensors associated with rather low sensitivity and selectivity, particularly under highly humid conditions. This study introduces newly designed bimetallic nanoparticles (NPs) employing bimetallic Pt‐based NPs (PtM, where M = Pd, Rh, and Ni) via a protein encapsulating route supported on mesoporous WO₃ nanofibers. These structures demonstrate unprecedented sensing performance for detecting target biomarkers (even at p.p.b. levels) in highly humid exhaled breath. Sensor arrays are further employed to enable pattern recognition capable of discriminating between simulated biomarkers and controlled breath. The results provide a new class of multicomponent catalytic materials, demonstrating potential for achieving reliable breath analysis sensing.     

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Single‐crystalline GaN‐based light‐emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid‐state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high‐quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high‐brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal–organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In_xGa_1?xN/GaN multiple quantum well structures. The as‐fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one‐step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high‐brightness LEDs.     

Photovoltaic–Pyroelectric Coupled Effect Induced Electricity for Self‐Powered Photodetector System

Ferroelectric materials have demonstrated novel photovoltaic effect to scavenge solar energy. However, most of the ferroelectric materials with wide bandgaps (2.7–4 eV) suffer from low power conversion efficiency of less than 0.5% due to absorbing only 8–20% of solar spectrum. Instead of harvesting solar energy, these ferroelectric materials can be well suited for photodetector applications, especially for sensing near‐UV irradiations. Here, a ferroelectric BaTiO₃ film‐based photodetector is demonstrated that can be operated without using any external power source and a fast sensing of 405 nm light illumination is enabled. As compared with photovoltaic effect, both the responsivity and the specific detectivity of the photodetector can be dramatically enhanced by larger than 260% due to the light‐induced photovoltaic–pyroelectric coupled effect. A self‐powered photodetector array system can be utilized to achieve spatially resolved light intensity detection by recording the output voltage signals as a mapping figure.     

Polymer‐Fullerene Bulk‐Heterojunction Solar Cells

Solution‐processed bulk‐heterojunction solar cells have gained serious attention during the last few years and are becoming established as one of the future photovoltaic technologies for low‐cost power production. This article reviews the highlights of the last few years, and summarizes today's state‐of‐the‐art performance. An outlook is given on relevant future materials and technologies that have the potential to guide this young photovoltaic technology towards the magic 10% regime. A cost model supplements the technical discussions, with practical aspects any photovoltaic technology needs to fulfil, and answers to the question as to whether low module costs can compensate lower lifetimes and performances.     

Nanostructured Materials for Room‐Temperature Gas Sensors

Sensor technology has an important effect on many aspects in our society, and has gained much progress, propelled by the development of nanoscience and nanotechnology. Current research efforts are directed toward developing high‐performance gas sensors with low operating temperature at low fabrication costs. A gas sensor working at room temperature is very appealing as it provides very low power consumption and does not require a heater for high‐temperature operation, and hence simplifies the fabrication of sensor devices and reduces the operating cost. Nanostructured materials are at the core of the development of any room‐temperature sensing platform. The most important advances with regard to fundamental research, sensing mechanisms, and application of nanostructured materials for room‐temperature conductometric sensor devices are reviewed here. Particular emphasis is given to the relation between the nanostructure and sensor properties in an attempt to address structure–property correlations. Finally, some future research perspectives and new challenges that the field of room‐temperature sensors will have to address are also discussed.     

2D In2S3 Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Silicon‐based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light–matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In₂S₃ with Gr/Si PDs is demonstrated. The introduction of the double‐heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In₂S₃/graphene/Si devices present an ultrahigh photoresponsivity of 4.53 × 10⁴ A W^?1 and fast response speed less than 40 µs, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In₂S₃/graphene/Si PD expresses outstanding long‐term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high‐sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.     

Controlled Synthesis of Hollow Cu2‐xTe Nanocrystals Based on the Kirkendall Effect and Their Enhanced CO Gas‐Sensing Properties

This paper develops a facile solution‐based method to synthesize hollow Cu_2‐xTe nanocrystals (NCs) with tunable interior volume based on the Kirkendall effect. Transmission electron microscopy images and time‐dependent absorption spectra reveal the temporal growth process from solid copper nanoparticles to hollow Cu_2‐xTe NCs. Furthermore, the as‐prepared hollow Cu_2‐xTe NCs show enhanced sensitivity for the detection of carbon monoxide (CO), which is often referred to as the “silent killer”. The response and recovery time of the as‐prepared sensor for the detection of 100 ppm CO gas are estimated to be about 21 and 100 s, respectively, which are sufficient to render it a promising candidate for effective CO gas‐sensing applications. Such enhanced performance is achieved owing to the small grain size and large specific area of the hollow nanostructures. Therefore, the obtained hollow NCs based on the Kirkendall effect may have the potential as new functional blocks for high‐performance gas sensors.     

An Ultrasensitive Silicon Photonic Ion Sensor Enabled by 2D Plasmonic Molybdenum Oxide

Silicon photonics has demonstrated great potential in ultrasensitive biochemical sensing. However, it is challenging for such sensors to detect small ions which are also of great importance in many biochemical processes. A silicon photonic ion sensor enabled by an ionic dopant–driven plasmonic material is introduced here. The sensor consists of a microring resonator (MRR) coupled with a 2D restacked layer of near‐infrared plasmonic molybdenum oxide. When the 2D plasmonic layer interacts with ions from the environment, a strong change in the refractive index results in a shift in the MRR resonance wavelength and simultaneously the alteration of plasmonic absorption leads to the modulation of MRR transmission power, hence generating dual sensing outputs which is unique to other optical ion sensors. Proof‐of‐concept via a pH sensing model is demonstrated, showing up to 7 orders improvement in sensitivity per unit area across the range from 1 to 13 compared to those of other optical pH sensors. This platform offers the unique potential for ultrasensitive and robust measurement of changes in ionic environment, generating new modalities for on‐chip chemical sensors in the micro/nanoscale.     

Metal Chelation Assisted In Situ Migration and Functionalization of Catalysts on Peapod‐Like Hollow SnO2 toward a Superior Chemical Sensor

Rational design of nanostructures and efficient catalyst functionalization methods are critical to the realization of highly sensitive gas sensors. In order to solve these issues, two types of strategies are reported, i.e., (i) synthesis of peapod‐like hollow SnO₂ nanostructures (hollow 0D‐1D SnO₂) by using fluid dynamics of liquid Sn metal and (ii) metal–protein chelate driven uniform catalyst functionalization. The hollow 0D‐1D SnO₂ nanostructures have advantages in enhanced gas accessibility and higher surface areas. In addition to structural benefits, protein encapsulated catalytic nanoparticles result in the uniform catalyst functionalization on both hollow SnO₂ spheres and SnO₂ nanotubes due to their dynamic migration properties. The migration of catalysts with liquid Sn metal is induced by selective location of catalysts around Sn. On the basis of these structural and uniform functionalization of catalyst benefits, biomarker chemical sensors are developed, which deliver highly selective detection capability toward acetone and toluene, respectively. Pt or Pd loaded multidimensional SnO₂ nanostructures exhibit outstanding acetone (R _air/R _gas = 93.55 @ 350 °C, 5 ppm) and toluene (R _air/R _gas = 9.25 @ 350 °C, 5 ppm) sensing properties, respectively. These results demonstrate that unique nanostructuring and novel catalyst loading method enable sensors to selectively detect biomarkers for exhaled breath sensors.     

Sensing at the Surface of Graphene Field‐Effect Transistors

Recent research trends now offer new opportunities for developing the next generations of label‐free biochemical sensors using graphene and other two‐dimensional materials. While the physics of graphene transistors operated in electrolyte is well grounded, important chemical challenges still remain to be addressed, namely the impact of the chemical functionalizations of graphene on the key electrical parameters and the sensing performances. In fact, graphene – at least ideal graphene – is highly chemically inert. The functionalizations and chemical alterations of the graphene surface – both covalently and non‐covalently – are crucial steps that define the sensitivity of graphene. The presence, reactivity, adsorption of gas and ions, proteins, DNA, cells and tissues on graphene have been successfully monitored with graphene. This review aims to unify most of the work done so far on biochemical sensing at the surface of a (chemically functionalized) graphene field‐effect transistor and the challenges that lie ahead. The authors are convinced that graphene biochemical sensors hold great promise to meet the ever‐increasing demand for sensitivity, especially looking at the recent progresses suggesting that the obstacle of Debye screening can be overcome.     

An Ultrasensitive Organic Semiconductor NO2 Sensor Based on Crystalline TIPS‐Pentacene Films

Organic semiconductor gas sensor is one of the promising candidates of room temperature operated gas sensors with high selectivity. However, for a long time the performance of organic semiconductor sensors, especially for the detection of oxidizing gases, is far behind that of the traditional metal oxide gas sensors. Although intensive attempts have been made to address the problem, the performance and the understanding of the sensing mechanism are still far from sufficient. Herein, an ultrasensitive organic semiconductor NO₂ sensor based on 6,13‐bis(triisopropylsilylethynyl)­pentacene (TIPS‐petacene) is reported. The device achieves a sensitivity over 1000%/ppm and fast response/recovery, together with a low limit of detection (LOD) of 20 ppb, all of which reach the level of metal oxide sensors. After a comprehensive analysis on the morphology and electrical properties of the organic films, it is revealed that the ultrahigh performance is largely related to the film charge transport ability, which was less concerned in the studies previously. And the combination of efficient charge transport and low original charge carrier concentration is demonstrated to be an effective access to obtain high performance organic semiconductor gas sensors.     

An integrated solution for NOx‐reduction and ‐control under lean‐burn conditions

Upcoming emission regulations order highly effective NO_x‐reduction systems in lean‐burn engines requiring new catalytic materials and integrated control of the reduction process. Thus, new approaches for NO_x‐reduction and its monitoring over an On‐Board‐Diagnostic (OBD) system are suggested throughout the globe. A promising attempt is the development of a catalytic system having an integrated NO_x‐sensor, based on selective catalytic reduction process and impedance sensors. The study displays the results achieved both with a perovskite type of self‐regenerative catalyst functioning by H₂‐reductant and with impedance NO_x‐sensors. The catalysts were tested at the temperature range of 150 °C to 360 °C yielding NO_x conversion rates of 92 % with high selectivity to N₂. Impedance sensors having NiCr₂O₄‐ and NiO‐SE and PYSZ‐ and FYSZ‐electrolytes are developed and tested at 600 °C under lean atmosphere (5 vol. % O₂). Better sensing behaviour towards NO and lower cross‐selectivity towards O₂, CO, CO₂ and CH₄ have been observed with sensors having NiO‐SE.