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1.
High‐Performance Flexible Photodetectors based on High‐Quality Perovskite Thin Films by a Vapor–Solution Method 下载免费PDF全文
Wei Hu Wei Huang Shuzhen Yang Xiao Wang Zhenyu Jiang Xiaoli Zhu Hong Zhou Hongjun Liu Qinglin Zhang Xiujuan Zhuang Junliang Yang Dong Ha Kim Anlian Pan 《Advanced materials (Deerfield Beach, Fla.)》2017,29(43)
Organometal halide perovskites are new light‐harvesting materials for lightweight and flexible optoelectronic devices due to their excellent optoelectronic properties and low‐temperature process capability. However, the preparation of high‐quality perovskite films on flexible substrates has still been a great challenge to date. Here, a novel vapor–solution method is developed to achieve uniform and pinhole‐free organometal halide perovskite films on flexible indium tin oxide/poly(ethylene terephthalate) substrates. Based on the as‐prepared high‐quality perovskite thin films, high‐performance flexible photodetectors (PDs) are constructed, which display a nR value of 81 A W?1 at a low working voltage of 1 V, three orders higher than that of previously reported flexible perovskite thin‐film PDs. In addition, these flexible PDs exhibit excellent flexural stability and durability under various bending situations with their optoelectronic performance well retained. This breakthrough on the growth of high‐quality perovskite thin films opens up a new avenue to develop high‐performance flexible optoelectronic devices. 相似文献
2.
Low‐Voltage Photodetectors with High Responsivity Based on Solution‐Processed Micrometer‐Scale All‐Inorganic Perovskite Nanoplatelets 下载免费PDF全文
Xuhai Liu Dejian Yu Fei Cao Xiaoming Li Jianping Ji Jun Chen Xiufeng Song Haibo Zeng 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(25)
All‐inorganic photodetectors based on scattered CsPbBr3 nanoplatelets with lateral dimension as large as 10 µm are fabricated, and the CsPbBr3 nanoplatelets are solution processed governed by a newly developed ion‐exchange soldering mechanism. Under illumination of a 442 nm laser, the photoresponsivity of photodetectors based on these scattered CsPbBr3 nanoplatelets is as high as 34 A W?1, which is the largest value reported from all‐inorganic perovskite photodetectors with an external driven voltage as small as 1.5 V. Moreover, the rise and fall times are 0.6 and 0.9 ms, respectively, which are comparable to most of the state‐of‐the‐art all‐inorganic perovskite‐based photodetectors. All the material synthesis and device characterization are conducted at room temperature in ambient air. This work demonstrates that the solution‐processed large CsPbBr3 nanoplatelets are attractive candidates to be applied in low‐voltage, low‐cost, ultra highly integrated optoelectronic devices. 相似文献
3.
Wei Tian Liangliang Min Fengren Cao Liang Li 《Advanced materials (Deerfield Beach, Fla.)》2020,32(16):1906974
Flexible and self-powered perovskite photodetectors have attracted tremendous research interests due to their applications in wearable and portable devices. However, the conventional planar structured photodetectors are always accompanied with limited device performance and undesired mechanical stability. Herein, a nested inverse opal (NIO) structured perovskite photodetector via a facile template-assisted spin-coating method is reported. The coupling effect of enhanced light capture, increased carrier transport, and improved perovskite film quality enables NIO device to exhibit superior photoresponse performance. The NIO photodetector exhibits a high responsivity of 473 mA W−1 and detectivity up to 1.35 × 1013 Jones at 720 nm without external bias. The NIO structure can efficiently release mechanical stress during the bending process and the photocurrent has no degradation even after 500 cycles of bending. Moreover, the unencapsulated NIO device can operate for over 16 d under ambient conditions, presenting a significantly enhanced environmental stability compared to the planar device. This work demonstrates that deliberate structural design is an effective avenue for constructing self-powered, flexible, and stable optoelectronic devices. 相似文献
4.
Ultra‐Broadband Flexible Photodetector Based on Topological Crystalline Insulator SnTe with High Responsivity 下载免费PDF全文
Jie Yang Wenzhi Yu Zhenghui Pan Qiang Yu Qing Yin Lei Guo Yanfei Zhao Tian Sun Qiaoliang Bao Kai Zhang 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(37)
Topological crystalline insulators (TCIs) are predicted to be a promising candidate material for ultra‐broadband photodetectors ranging from ultraviolet (UV) to terahertz (THz) due to its gapless surface state and narrow bulk bandgap. However, the low responsivity of TCIs‐based photodetectors limits their further applications. In this regard, a high‐performance photodetector based on SnTe, a recently developed TCI, working in a broadband wavelength range from deep UV to mid‐IR with high responsivity is reported. By taking advantage of the strong light absorption and small bandgap of SnTe, photodetectors based on the as‐grown SnTe crystalline nanoflakes as well as specific short channel length achieve a high responsivity (71.11 A W?1 at 254 nm, 49.03 A W?1 at 635 nm, 10.91 A W?1 at 1550 nm, and 4.17 A W?1 at 4650 nm) and an ultra‐broad spectral response (254–4650 nm) simultaneously. Moreover, for the first time, a durable flexible SnTe photodetector fabricated directly on a polyethylene terephthalate film is demonstrated. These results prove the great potential of TCIs as a promising material for integrated and flexible optoelectronic devices. 相似文献
5.
Dual‐Phase CsPbBr3–CsPb2Br5 Perovskite Thin Films via Vapor Deposition for High‐Performance Rigid and Flexible Photodetectors 下载免费PDF全文
Guoqing Tong Huan Li Danting Li Zhifeng Zhu Enze Xu Guopeng Li Linwei Yu Jun Xu Yang Jiang 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(7)
Inorganic perovskites with special semiconducting properties and structures have attracted great attention and are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process with a controlled excess of PbBr2, dual‐phase all‐inorganic perovskite composite CsPbBr3–CsPb2Br5 thin films are prepared as light‐harvesting layers and incorporated in a photodetector (PD). The PD has a high responsivity and detectivity of 0.375 A W?1 and 1011 Jones, respectively, and a fast response time (from 10% to 90% of the maximum photocurrent) of ≈280 µs/640 µs. The device also shows an excellent stability in air for more than 65 d without encapsulation. Tetragonal CsPb2Br5 provides satisfactory passivation to reduce the recombination of the charge carriers, and with its lower free energy, it enhances the stability of the inorganic perovskite devices. Remarkably, the same inorganic perovskite photodetector is also highly flexible and exhibits an exceptional bending performance (>1000 cycles). These results highlight the great potential of dual‐phase inorganic perovskite films in the development of optoelectronic devices, especially for flexible device applications. 相似文献
6.
Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility 下载免费PDF全文
Wenzhi Yu Shaojuan Li Yupeng Zhang Weiliang Ma Tian Sun Jian Yuan Kai Fu Qiaoliang Bao 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(24)
2D transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their impressively high performance in optoelectronic devices. However, efficient infrared (IR) photodetection has been significantly hampered because the absorption wavelength range of most TMDCs lies in the visible spectrum. In this regard, semiconducting 2D MoTe2 can be an alternative choice owing to its smaller band gap ≈1 eV from bulk to monolayer and high carrier mobility. Here, a MoTe2/graphene heterostructure photodetector is demonstrated for efficient near‐infrared (NIR) light detection. The devices achieve a high responsivity of ≈970.82 A W?1 (at 1064 nm) and broadband photodetection (visible‐1064 nm). Because of the effective photogating effect induced by electrons trapped in the localized states of MoTe2, the devices demonstrate an extremely high photoconductive gain of 4.69 × 108 and detectivity of 1.55 × 1011 cm Hz1/2 W?1. Moreover, flexible devices based on the MoTe2/graphene heterostructure on flexible substrate also retains a good photodetection ability after thousands of times bending test (1.2% tensile strain), with a high responsivity of ≈60 A W?1 at 1064 nm at V DS = 1 V, which provides a promising platform for highly efficient, flexible, and low cost broadband NIR photodetectors. 相似文献
7.
Solution‐Processed 3D RGO–MoS2/Pyramid Si Heterojunction for Ultrahigh Detectivity and Ultra‐Broadband Photodetection 下载免费PDF全文
Peng Xiao Jie Mao Ke Ding Wenjin Luo Weida Hu Xiujuan Zhang Xiaohong Zhang Jiansheng Jie 《Advanced materials (Deerfield Beach, Fla.)》2018,30(31)
Molybdenum disulfide (MoS2), a typical 2D metal dichalcogenide (2DMD), has exhibited tremendous potential in optoelectronic device applications, especially in photodetection. However, due to the weak light absorption of planar mono‐/multilayers, limited cutoff wavelength edge, and lack of high‐quality junctions, most reported MoS2‐based photodetectors show undesirable performance. Here, a structurized 3D heterojunction of RGO–MoS2/pyramid Si is demonstrated via a simple solution‐processing method. Owing to the improved light absorption by the pyramid structure, the narrowed bandgap of the MoS2 by the imperfect crystallinity, and the enhanced charge separation/transportation by the inserted reduced graphene oxide (RGO), the assembled photodetector exhibits excellent performance in terms of a large responsivity of 21.8 A W?1, extremely high detectivity up to 3.8 × 1015 Jones (Jones = cm Hz1/2 W?1) and ultrabroad spectrum response ranging from 350 nm (ultraviolet) to 4.3 µm (midwave infrared). These device parameters represent the best results for MoS2‐based self‐driven photodetectors, and the detectivity value sets a new record for the 2DMD‐based photodetectors reported thus far. Prospectively, the design of novel 3D heterojunction can be extended to other 2DMDs, opening up the opportunities for a host of high‐performance optoelectronic devices. 相似文献
8.
High‐Performance Inorganic Perovskite Quantum Dot–Organic Semiconductor Hybrid Phototransistors 下载免费PDF全文
Yantao Chen Yingli Chu Xiaohan Wu Wei Ou‐Yang Jia Huang 《Advanced materials (Deerfield Beach, Fla.)》2017,29(44)
All‐inorganic lead halide perovskite quantum dots (IHP QDs) have great potentials in photodetectors. However, the photoresponsivity is limited by the low charge transport efficiency of the IHP QD layers. High‐performance phototransistors based on IHP QDs hybridized with organic semiconductors (OSCs) are developed. The smooth surface of IHP QD layers ensures ordered packing of the OSC molecules above them. The OSCs significantly improve the transportation of the photoexcited charges, and the gate effect of the transistor structure significantly enhances the photoresponsivity while simultaneously maintaining high I photo/I dark ratio. The devices exhibit outstanding optoelectronic properties in terms of photoresponsivity (1.7 × 104 A W?1), detectivity (2.0 × 1014 Jones), external quantum efficiency (67000%), I photo/I dark ratio (8.1 × 104), and stability (100 d in air). The overall performances of our devices are superior to state‐of‐the‐art IHP photodetectors. The strategy utilized here is general and can be easily applied to many other perovskite photodetectors. 相似文献
9.
Yan Chen Xudong Wang Guangjian Wu Zhen Wang Hehai Fang Tie Lin Shuo Sun Hong Shen Weida Hu Jianlu Wang Jinglan Sun Xiangjian Meng Junhao Chu 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(9)
Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light‐emitting devices, and photodiodes. In this work, high‐performance photovoltaic photodetectors based on MoTe2/MoS2 vertical heterojunctions are demonstrated by exfoliating‐restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>105) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W?1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications. 相似文献
10.
Yuting Zou Tingting Zou Chen Zhao Bin Wang Jun Xing Zhi Yu Jinluo Cheng Wei Xin Jianjun Yang Weili Yu Huanli Dong Chunlei Guo 《Small (Weinheim an der Bergstrasse, Germany)》2020,16(25)
Organolead trihalide perovskites have attracted significant attention for optoelectronic applications due to their excellent physical properties in the past decade. Generally, both grain boundaries in perovskite films and the device structure play key roles in determining the device performance, especially for horizontal‐structured device. Here, the first optimized vertical‐structured photodetector with the perovskite single crystal MAPbBr3 as the light absorber and graphene as the transport layer is shown. The hybrid device combines strong photoabsorption characteristics of perovskite and high carrier mobility of flexible graphene, exhibits excellent photoresponse performance with high photoresponsivity (≈1017.1 A W?1) and high photodetectivity (≈2.02 × 1013 Jones) in a low light intensity (0.66 mW cm?2) under the actuations of 3 V bias and laser irradiation at 532 nm. In particular, an ultrahigh photoconductive gain of ≈2.37 × 103 is attained because of fast charge transfer in the graphene and large recombination lifetime in the perovskite single crystal. The vertical architecture combining perovskite crystal with highly conductive graphene offers opportunities to fulfill the synergistic effect of perovskite and 2D materials, is thus promising for developing high‐performance electronic and optoelectronic devices. 相似文献
11.
High Performance and Stable All‐Inorganic Metal Halide Perovskite‐Based Photodetectors for Optical Communication Applications 下载免费PDF全文
Chunxiong Bao Jie Yang Sai Bai Weidong Xu Zhibo Yan Qingyu Xu Junming Liu Wenjing Zhang Feng Gao 《Advanced materials (Deerfield Beach, Fla.)》2018,30(38)
Photodetectors are critical parts of an optical communication system for achieving efficient photoelectronic conversion of signals, and the response speed directly determines the bandwidth of the whole system. Metal halide perovskites, an emerging class of low‐cost solution‐processed semiconductors, exhibiting strong optical absorption, low trap states, and high carrier mobility, are widely investigated in photodetection applications. Herein, through optimizing the device engineering and film quality, high‐performance photodetectors based on all‐inorganic cesium lead halide perovskite (CsPbIxBr3–x), which simultaneously possess high sensitivity and fast response, are demonstrated. The optimized devices processed from CsPbIBr2 perovskite show a practically measured detectable limit of about 21.5 pW cm?2 and a fast response time of 20 ns, which are both among the highest reported device performance of perovskite‐based photodetectors. Moreover, the photodetectors exhibit outstanding long‐term environmental stability, with negligible degradation of the photoresponse property after 2000 h under ambient conditions. In addition, the resulting perovskite photodetector is successfully integrated into an optical communication system and its applications as an optical signal receiver on transmitting text and audio signals is demonstrated. The results suggest that all‐inorganic metal halide perovskite‐based photodetectors have great application potential for optical communication. 相似文献
12.
Yue Hou Liming Wang Xuming Zou Da Wan Chang Liu Guoli Li Xingqiang Liu Yufang Liu Changzhong Jiang Johnny C. Ho Lei Liao 《Small (Weinheim an der Bergstrasse, Germany)》2020,16(5)
All‐inorganic halide perovskites (IHPs) have attracted enormous attention due to their intrinsically high optical absorption coefficient and superior ambient stabilities. However, the photosensitivity of IHP‐based photodetectors is still restricted by their poor conductivities. Here, a facile design of hybrid phototransistors based on the CsPbBr3 thin film and indium tin oxide (ITO) nanowires (NWs) integrated into a InGaZnO channel in order to achieve both high photoresponsivity and fast response is reported. The metallic ITO NWs are employed as electron pumps and expressways to efficiently extract photocarriers from CsPbBr3 and inject electrons into InGaZnO. The obtained device exhibits the outstanding responsivity of 4.9 × 106 A W?1, which is about 100‐fold better than the previous best results of CsPbBr3‐based photodetectors, together with the fast response (0.45/0.55 s), long‐term stability (200 h in ambient), and excellent mechanical flexibility. By operating the phototransistor in the depletion regime, an ultrahigh specific detectivity up to 7.6 × 1013 Jones is achieved. More importantly, the optimized spin‐coating manufacturing process is highly beneficial for achieving uniform InGaZnO‐ITO/perovskite hybrid films for high‐performance flexible detector arrays. All these results can not only indicate the potential of these hybrid phototransistors but also provide a valuable insight into the design of hybrid material systems for high‐performance photodetection. 相似文献
13.
Qijie Liang Qixing Wang Qian Zhang Jingxuan Wei Sharon Xiaodai Lim Rui Zhu Junxiong Hu Wei Wei Chengkuo Lee ChorngHaur Sow Wenjing Zhang Andrew Thye Shen Wee 《Advanced materials (Deerfield Beach, Fla.)》2019,31(24)
Photodetection over a broad spectral range is crucial for optoelectronic applications such as sensing, imaging, and communication. Herein, a high‐performance ultra‐broadband photodetector based on PdSe2 with unique pentagonal atomic structure is reported. The photodetector responds from visible to mid‐infrared range (up to ≈4.05 µm), and operates stably in ambient and at room temperature. It promises improved applications compared to conventional mid‐infrared photodetectors. The highest responsivity and external quantum efficiency achieved are 708 A W?1 and 82 700%, respectively, at the wavelength of 1064 nm. Efficient optical absorption beyond 8 µm is observed, indicating that the photodetection range can extend to longer than 4.05 µm. Owing to the low crystalline symmetry of layered PdSe2, anisotropic properties of the photodetectors are observed. This emerging material shows potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable. 相似文献
14.
Self‐Powered,Flexible, and Solution‐Processable Perovskite Photodetector Based on Low‐Cost Carbon Cloth 下载免费PDF全文
Haoxuan Sun Tianyu Lei Wei Tian Fengren Cao Jie Xiong Liang Li 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(28)
Flexible perovskite photodetectors are usually constructed on indium‐tin‐oxide‐coated polymer substrates, which are expensive, fragile, and not resistant to high temperature. Herein, for the first time, a high‐performance flexible perovskite photodetector is fabricated based on low‐cost carbon cloth via a facile solution processable strategy. In this device, perovskite microcrystal and Spiro‐OMeTAD (hole transporting material) blended film act as active materials for light detection, and carbon cloth serves as both a flexible substrate and a conductive electrode. The as‐fabricated photodetector shows a broad spectrum response from ultraviolet to near‐infrared light, high responsivity, fast response speed, long‐term stability, and self‐powered capability. Flexible devices show negligible degradation after several tens of bending cycles and at the extremely bending angle of 180°. This work promises a new technique to construct flexible, high‐performance photodetectors with low cost and self‐powered capability. 相似文献
15.
Guobiao Cen Yujin Liu Chuanxi Zhao Gai Wang Yong Fu Genghua Yan Ye Yuan Chunhua Su Zhijuan Zhao Wenjie Mai 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(36)
Self‐powered photodetectors (PDs) based on inorganic metal halide perovskites are regarded as promising alternatives for the next generation of photodetectors. However, uncontrollable film growth and sluggish charge extraction at interfaces directly limit the sensitivity and response speed of perovskite‐based photodetectors. Herein, by assistance of an atomic layer deposition (ALD) technique, CsPbBr3 perovskite thin films with preferred orientation and enlarged grain size are obtained on predeposited interfacial modification layers. Thanks to improved film quality and double side interfacial engineering, the optimized CsPbBr3 (Al2O3/CsPbBr3/TiO2, ACT) perovskite PDs exhibit outstanding performance with ultralow dark current of 10?11 A, high detectivity of 1.88 × 1013 Jones and broad linear dynamic range (LDR) of 172.7 dB. Significantly, excellent long‐term environmental stability (ambient conditions >100 d) and flexibility stability (>3000 cycles) are also achieved. The remarkable performance is credited to the synergistic effects of high carrier conductivity and collection efficiency, which is assisted by ALD modification layers. Finally, the ACT PDs are successfully integrated into a visible light communication system as a light receiver on transmitting texts, showing a bit rate as high as 100 kbps. These results open the window of high performance all‐inorganic halide perovskite photodetectors and extends to rational applications for optical communication. 相似文献
16.
Ultrahigh Carrier Mobility Achieved in Photoresponsive Hybrid Perovskite Films via Coupling with Single‐Walled Carbon Nanotubes 下载免费PDF全文
Feng Li Hong Wang Dominik Kufer Liangliang Liang Weili Yu Erkki Alarousu Chun Ma Yangyang Li Zhixiong Liu Changxu Liu Nini Wei Fei Wang Lang Chen Omar F. Mohammed Andrea Fratalocchi Xiaogang Liu Gerasimos Konstantatos Tom Wu 《Advanced materials (Deerfield Beach, Fla.)》2017,29(16)
Organolead trihalide perovskites have drawn substantial interest for photovoltaic and optoelectronic applications due to their remarkable physical properties and low processing cost. However, perovskite thin films suffer from low carrier mobility as a result of their structural imperfections such as grain boundaries and pinholes, limiting their device performance and application potential. Here we demonstrate a simple and straightforward synthetic strategy based on coupling perovskite films with embedded single‐walled carbon nanotubes. We are able to significantly enhance the hole and electron mobilities of the perovskite film to record‐high values of 595.3 and 108.7 cm2 V?1 s?1, respectively. Such a synergistic effect can be harnessed to construct ambipolar phototransistors with an ultrahigh detectivity of 3.7 × 1014 Jones and a responsivity of 1 × 104 A W?1, on a par with the best devices available to date. The perovskite/carbon nanotube hybrids should provide a platform that is highly desirable for fields as diverse as optoelectronics, solar energy conversion, and molecular sensing. 相似文献
17.
Ultrasensitive and Fast All‐Inorganic Perovskite‐Based Photodetector via Fast Carrier Diffusion 下载免费PDF全文
Bin Yang Fengying Zhang Junsheng Chen Songqiu Yang Xusheng Xia Tõnu Pullerits Weiqiao Deng Keli Han 《Advanced materials (Deerfield Beach, Fla.)》2017,29(40)
Low trap‐state density, high carrier mobility, and efficient charge carrier collection are key parameters for photodetectors with high sensitivity and fast response time. This study demonstrates a simple solution growth method to prepare CsPbBr3 microcrystals (MCs) with low trap‐state density. Time‐dependent photoluminescence study with one‐photon excitation (OPE) and two‐photon excitation (TPE) indicates that CsPbBr3 MCs exhibit fast carrier diffusion with carrier mobility over 100 cm2 V?1 S?1. Furthermore, CsPbBr3 MC‐based photodetectors with high charge carriers' collection efficiency are fabricated. Such photodetectors show ultrahigh responsivity (R ) up to 6 × 104 A W?1 with OPE and high R up to 6 A W?1 with TPE. The R for OPE is over one order of magnitude higher (the R for TPE is three orders of magnitude higher) than that of previously reported all‐inorganic perovskite‐based photodetectors. Moreover, the photodetectors exhibit fast response time of ≈1 ms, which corresponds to a gain ≈105 and a gain‐ bandwidth product of 108 Hz for OPE (a gain ≈103 and a gain‐bandwidth product of 106 Hz for TPE). 相似文献
18.
2D lead iodide (PbI2) is attracting great interest due to its great potential in the application of UV photodetectors. In this work, a facile solution‐based method is developed to synthesize ultraflat PbI2 nanoflakes for high‐performance UV photodetectors. By maintaining at proximate room temperature and adding an evaporation suppression solvent for slow‐rate crystal growth, high‐quality PbI2 nanoflakes with an ultraflat surface are obtained. The UV photodetectors based on 2D PbI2 nanoflakes exhibit a high photoresponsivity of 0.51 A W?1, a high detectivity of 4.0 × 1010 Jones, a high external quantum efficiency (EQE) of 168.9%, and a rapid response speed including a rise time of 14.1 ms and a decay time of 31.0 ms. The balanced and excellent photodetector performance of these devices paves the road for practical UV photodetection based on 2D PbI2 nanoflakes. 相似文献
19.
Phase‐Engineered Type‐II Multimetal–Selenide Heterostructures toward Low‐Power Consumption,Flexible, Transparent,and Wide‐Spectrum Photoresponse Photodetectors 下载免费PDF全文
Yu‐Ze Chen Sheng‐Wen Wang Teng‐Yu Su Shao‐Hsin Lee Chia‐Wei Chen Chen‐Hua Yang Kuangye Wang Hao‐Chung Kuo Yu‐Lun Chueh 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(22)
Phase‐engineered type‐II metal–selenide heterostructures are demonstrated by directly selenizing indium‐tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low‐temperature process, which results in large‐area films with high uniformity. Compared to single‐metal–selenide‐based photodetectors, the multimetal–selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type‐II heterostructure that is beneficial for the separation of the electron–hole pairs. The multimetal–selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W?1 and an on/off current ratio of up to 102. Interestingly, all‐transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests. 相似文献
20.
Pengbin Gui Hai Zhou Fang Yao Zehao Song Borui Li Guojia Fang 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(39)
Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I‐ or Br‐based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl‐based wide bandgap perovskites, such as CsPbCl3, are scarcely reported because of the bad film quality of the spin‐coated Cl‐based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high‐quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high‐quality single crystal CsPbCl3 microplatelets (MPs) synthesized by a simple space‐confined growth method at low temperature for near‐ultraviolet (NUV) PDs are reported. The single CsPbCl3 MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 103 and a responsivity of 0.45 A W?1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 1011 Jones. Moreover, PDs possess good stability and repeatability. 相似文献