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1.
During the past decade, great effort has been devoted to research on 2D layered materials due to their reduced thickness and extraordinary physical properties, which open new opportunities for developing next‐generation applications in various fields. Ultrathin III–VI semiconductors (e.g., GaSe, InSe, In2Se3, etc.) have emerged as potential candidates for nano‐optoelectronic applications thanks to their sizable layer‐dependent bandgaps and high carrier mobility, which could enable broadband photodetection and efficient conversion of solar energy. A systematic review is provided on 2D III–VI semiconductor‐based state‐of‐the‐art optoelectronic devices, such as phototransistors, photoconductors, and solar cells, reported in recent years. To better understand the mechanism and performance of the devices, an introduction to the electronic structures and optical properties of several representative III–VI members is first given. A comprehensive overview is then given on device geometry design, operating principles, and performance in optoelectronic applications based on III–VI semiconductors and their heterostructures. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities in this field is provided. 相似文献
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Somayeh Gholipour Abdollah Morteza Ali Juan‐Pablo Correa‐Baena Silver‐Hamill Turren‐Cruz Fariba Tajabadi Wolfgang Tress Nima Taghavinia Michael Grätzel Antonio Abate Filippo De Angelis Carlo Alberto Gaggioli Edoardo Mosconi Anders Hagfeldt Michael Saliba 《Advanced materials (Deerfield Beach, Fla.)》2017,29(38)
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Chaochao Dun Corey A. Hewitt Qi Li Junwei Xu Drew C. Schall Hyunsu Lee Qike Jiang David. L. Carroll 《Advanced materials (Deerfield Beach, Fla.)》2017,29(21)
Engineered atomic dislocations have been used to create a novel, Sb2Te3 nanoplate‐like architecture that exhibits a unique antisymmetric chirality. High‐resolution transmission electron microscopy (HRTEM) coupled with atomic force microscopy and X‐ray photoelectron spectroscopy reveals the architectures to be extremely well ordered with little residual strain. Surface modification of these topologically complex macrostructures (≈3 µm) has been achieved by direct growth of metallic Ag nanoparticles onto the edge sites of the Sb2Te3. Again, HRTEM shows this nanoparticle decoration to be atomically sharp at the boundaries and regularly spaced along the selvedge of the nanostructure. Transport experiments of densified films of these assemblies exhibit marked increases in carrier density after nanoengineering, yielding 3.5 × 104 S m?1 in electrical conductivity. An increased Seebeck coefficient by 20% in parallel with electrical conductivity is also observed. This gives a thermoelectric power factor of 371 µW m?1 K?2, which is the highest value for a flexible, freestanding film to date. These results suggest an entirely new direction in the search for wearable power harvesters based on topologically complex, low‐dimensional nanoassemblies. 相似文献
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2D Materials: Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls (Adv. Mater. 25/2015) 
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下载免费PDF全文 Hoseok Heo Ji Ho Sung Gangtae Jin Ji‐Hoon Ahn Kyungwook Kim Myoung‐Jae Lee Soonyoung Cha Hyunyong Choi Moon‐Ho Jo 《Advanced materials (Deerfield Beach, Fla.)》2015,27(25):3839-3839
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Qi Wang;Yiwen Song;Yuqia Ran;Yanping Li;Yu Pan;Yu Ye; 《Small (Weinheim an der Bergstrasse, Germany)》2024,20(24):2308635
Two-dimensional (2D) coplanar heterostructure enables high-performance optoelectronic devices, such as p–n heterojunctions. However, realizing site-controllable and shape-specific 2D coplanar heterojunctions composed of two semiconductors with the same crystal orientation still requires the development of new growth methods. Here, a route to fabricate MoS2–MoTe2 coplanar heterojunctions with the same crystal orientation is reported by exploiting the properties of phase transition and atomic rearrangement during the growth of 2H-MoTe2. Raman spectroscopy and electron microscopy techniques reveal the chemical composition and lattice structure of the heterostructure. Both MoS2 and MoTe2 in the heterojunction are single crystals and have the same lattice orientation, and their shapes can be arbitrarily defined by electron beam lithography. Electrical measurements show that the MoS2 and MoTe2 channels exhibit n-type and p-type transfer characteristics, respectively. The coplanar epitaxy technology can be used to prepare more coplanar heterostructures with novel device functions. 相似文献
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Rotation‐Misfit‐Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition‐Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls 下载免费PDF全文
下载免费PDF全文 Hoseok Heo Ji Ho Sung Gangtae Jin Ji‐Hoon Ahn Kyungwook Kim Myoung‐Jae Lee Soonyoung Cha Hyunyong Choi Moon‐Ho Jo 《Advanced materials (Deerfield Beach, Fla.)》2015,27(25):3803-3810
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Jia Sun Yongsuk Choi Young Jin Choi Seongchan Kim Jin‐Hong Park Sungjoo Lee Jeong Ho Cho 《Advanced materials (Deerfield Beach, Fla.)》2019,31(34)
The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low‐cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D–organic heterostructures—from their synthesis and fabrication to their state‐of‐the‐art optoelectronic applications—is presented. Future challenges and opportunities associated with these heterostructures are highlighted. 相似文献
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Jian Guo Laiyuan Wang Yiwei Yu Peiqi Wang Yu Huang Xiangfeng Duan 《Advanced materials (Deerfield Beach, Fla.)》2019,31(49)
The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal‐oxide‐semiconductor field‐effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec?1 at room temperature). However, another type of transistor, the junction field‐effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS2 van der Waals (vdW) heterostructure‐based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS2 vdW heterostructure exhibits excellent p–n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS2 as the channel, the SnSe/MoS2 vdW heterostructure exhibit well‐behavioured n‐channel JFET characteristics with a small pinch‐off voltage VP of ?0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec?1 and high ON/OFF ratio over 106, demonstrating excellent electronic performance especially in the subthreshold regime. 相似文献
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《Small Methods》2018,2(2)
The rise of 2D layered materials has inspired luxuriant research interests in the development of novel nanodevices. Thanks to van der Waals interlayer forces and being free of dangling surface bonds, 2D materials are favorable for constructing vertical heterostructures by combining materials with different features. In recent years, ultrathin black phosphorus (BP) has been rediscovered as a new member of the 2D family and is attracting significant research attention due to its outstanding electronic properties and tunable bandgaps, which offers a new avenue for the creation of novel 2D heterostructures. Here, the recent development of heterostructured architectures based on 2D BP nanosheets is summarized with an emphasis on device characterizations. Stacks of phosphorene with graphene, semiconductors, or insulators are reviewed, along with methods to characterize the corresponding proof‐of‐concept devices, as well as potential opportunities for applications in the 2D limit, including transistors, optoelectronic devices, and sensors, with unprecedented functionalities. Finally, the challenges ahead of BP heterostructures are discussed and some future outlooks are suggested. 相似文献
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Yang Ma Pulickel M. Ajayan Shubin Yang Yongji Gong 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(38)
Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p–n junctions, ohmic contact, high‐performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed. 相似文献
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Krishna Kanta Haldar Narayan Pradhan Amitava Patra 《Small (Weinheim an der Bergstrasse, Germany)》2013,9(20):3424-3432
Formation of heteroepitaxy and designing different‐shaped heterostructured nanomaterials of metal and semiconductor in solution remains a frontier area of research. However, it is evident that the synthesis of such materials is not straightforward and needs a selective approach to retain both metal and semiconductor identities in the reaction system during heterostructure formation. Herein, the epitaxial growth of semiconductor CdSe on selected facets of metal Au seeds is reported and different shapes (flower, tetrapod, and core/shell) hetero‐nanostructures are designed. These results are achieved by controlling the reaction parameters, and by changing the sequence and timing for introduction of different reactant precursors. Direct evidence of the formation of heteroepitaxy between {111} facets of Au and (0001) of wurtzite CdSe is observed during the formation of these three heterostructures. The mechanism of the evolution of these hetero‐nanostructures and formation of their heteroepitaxy with the planes having minimum lattice mismatch are also discussed. This shape‐control growth mechanism in hetero‐nanostructures should be helpful to provide more information for establishing the fundamental study of heteroepitaxial growth for designing new nanomaterials. Such metal–semiconductor nanostructures may have great potential for nonlinear optical properties, in photovoltaic devices, and as chemical sensors. 相似文献
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van der Waals heterostructures, composed of vertically stacked inorganic 2D materials, represent an ideal platform to demonstrate novel device architectures and to fabricate on‐demand materials. The incorporation of organic molecules within these systems holds an immense potential, since, while nature offers a finite number of 2D materials, an almost unlimited variety of molecules can be designed and synthesized with predictable functionalities. The possibilities offered by systems in which continuous molecular layers are interfaced with inorganic 2D materials to form hybrid organic/inorganic van der Waals heterostructures are emphasized. Similar to their inorganic counterpart, the hybrid structures have been exploited to put forward novel device architectures, such as antiambipolar transistors and barristors. Moreover, specific molecular groups can be employed to modify intrinsic properties and confer new capabilities to 2D materials. In particular, it is highlighted how molecular self‐assembly at the surface of 2D materials can be mastered to achieve precise control over position and density of (molecular) functional groups, paving the way for a new class of hybrid functional materials whose final properties can be selected by careful molecular design. 相似文献
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Yuanzhe Wang Yanyan Zhou Minze Han Yaokai Xi Huanhuan You Xianfeng Hao Zhiping Li Junshuang Zhou Dandan Song Dong Wang Faming Gao 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(16)
A class of 2D layered materials exhibits substantial potential for high‐performance electrocatalysts due to high specific surface area, tunable electronic properties, and open 2D channels for fast ion transport. However, liquid‐phase exfoliation always utilizes organic solvents that are harmful to the environment, and the active sites are limited to edge sites. Here, an environmentally friendly exfoliator in aqueous solution is presented without utilizing any toxic or hazardous substance and active site self‐assembly on the inert base of 2D materials. Benefiting from thin 2D/2D heterostructure and strong interfacial coupling, the resultant highly disordered amorphous NiFe/2D materials (Ti3C2 MXene, graphene and MoS2) thin nanosheets exhibit extraordinary electrocatalytic performance toward oxygen evolution reaction (OER) in alkaline media. DFT results further verify the experimental results. The study emphasizes a viable idea to probe efficient electrocatalysts by means of the synergistic effect of environmentally friendly exfoliator in aqueous solution and active site self‐assembly on the inert base of 2D materials which forms the unique thin 2D/2D heterostructure in‐suit. This new type of heterostructure opens up a novel avenue for the rational design of highly efficient 2D materials for electrocatalysis. 相似文献
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Puspanjali Sahu Gyanaranjan Prusty Amit K. Guria Narayan Pradhan 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(33)
For efficient charge separations, multimaterial hetero‐nanostructures are being extensively studied as photocatalysts. While materials with one heterojunction are widely established, the chemistry of formation of multijunction heterostructures is not explored. This needs a more sophisticated approach and modulations. To achieve these, a generic multistep seed mediated growth following controlled ion diffusion and ion exchange is reported which successfully leads to triple‐material hetero‐nanostructures with bimetallic‐binary alloy‐binary/ternary semiconductors arrangements. Ag2S nanocrystals are used as primary seeds for obtaining AuAg‐AuAgS bimetallic‐binary alloyed metal–semiconductor heterostructures via partial reduction of Ag(I) using Au(III) ions. These are again explored as secondary seeds for obtaining a series of triple‐materials heterostructures, AuAg‐AuAgS‐CdS (or ZnS or AgInS2), with introduction of different divalent and trivalent ions. Chemistry of each step of the gold ion–induced changes in the rate of diffusion and/or ion exchanges are investigated and the formation mechanism for these nearly monodisperse triple material heterostructures are proposed. Reactions without gold are also performed, and the change in the reaction chemistry and growth mechanism in presence of Au is also discussed. 相似文献
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Wennan Hu Zhe Sheng Xiang Hou Huawei Chen Zengxing Zhang David Wei Zhang Peng Zhou 《Small Methods》2021,5(1)
With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate‐controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field‐effect transistors, light‐emitting transistors, electrostatic‐field‐charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials. 相似文献
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Xiaoqiang Feng Ruiqing Cheng Lei Yin Yao Wen Jian Jiang Jun He 《Advanced materials (Deerfield Beach, Fla.)》2024,36(2):2304708
Atomically thin two-dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new-generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, the various types of 2D oxide crystals are first summarized, including both layered and nonlayered crystals, as well as their current top-down and bottom-up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, recent advances in device applications are emphasized, including photodetectors, field-effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. It is hoped that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications. 相似文献
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王晓亭 仲方 康俊 刘灿 雷鸣 潘龙飞 王海露 王芳 周子琦 崔宇 刘开辉 王建禄 沈国震 单崇新 李京波 胡伟达 魏钟鸣 《SCIENCE CHINA Materials》2021,(5):1230-1237
偏振是光的一个重要信息,偏振探测可以把信息量从三维(光强、光谱和空间)扩充到七维(光强、光谱、空间、偏振度、光偏振等),为成像物体提供关键的视觉信息(如表面粗糙度、几何形状或方向),因此偏振成像技术在目标检测等领域有着巨大的潜力.然而这些领域往往需要复杂的偏振编码,现有的复杂透镜系统和偏振器限制了集成成像传感器的小型化能力.本文通过二维各向异性α-Ge Se半导体,成功实现了无偏振器的偏振敏感可见-近红外光电探测器/成像仪.作为传感器系统的关键部件,该原型Au/GeSe/Au光电探测器具有灵敏度高、光谱响应宽、响应速度快(~103A W-1, 400–1050 nm, 22.7/49.5μs)等优点.此外,该器件在690–1050 nm光谱范围内表现出独特的偏振灵敏度,并且对沿y方向的偏振光吸收最强,这一点通过分析α-Ge Se的光跃迁行为也得到了证实.最后,将2D-Ge Se器件应用到成像系统中进行偏振成像,在808 nm近红外波段处,在不同的偏振方向上,辐射目标的对比度为3.45.这种成像仪在没有偏振器的情况下,能够在场景中感知双频偏振信号,为偏振成像传感器阵列的广泛应用奠定了基础. 相似文献