Thermal Characteriztion of 1.3 μm InAsP／InGaAsP Ridge Waveguide MQW Laser Based on Spectroscopy Method

An experimental way to analyze the thermal characteriztion of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed,By using this way the thermal characteristicss of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated.Results shovw that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges,the thermal resistance of the laser diodes could be deduced easily,A higer thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering.Other thermal and spectral properties of the laser have also been measured and discussed.     

Thermal Characterization of 1.3μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on I-V Method

An experimental way for the thermal characterization of semiconductor lasers based on I-V method under pulse driving conditions has been developed, with which the thermal characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide MQW laser chips have been investigated. The results show that, by measuring and analyzing the I-V characteristics under appropriate pulse driving conditions at different heat sink temperatures, the thermal resistance of the laser diodes could be easily deduced. The driving current and junction voltage waveforms of the laser chips under different pulse driving conditions are also discussed.     

Transient Thermal Analysis of Ridge Waveguide InAsP／InGaAsP MQW Lasers Operating in Pulse Driving Conditions

The transient thermal characteristics of the ridge waveguide InAsP/lnGaAsP MQW lasers, especially in various pulse driving conditions, have been simulated by using FEM. The temperature at the active core of the laser versus the time has been calculated as well as pulse width dependence of the apparent thermal resistance. The results show that the thermal characteristics of the lasers are related to both the thermal conductivity and the specific heat of the materials.     

Applications and Technologies of All-Solid State Blue Laser

1 Introduction Along with the matureness of laser diode (LD) manufacturing technology, the performance of LD has been improved greatly since 1980s, so various kinds of laser devices based on LD have been developed rapidly, especially the all-solid state lasers. After early experiments and researches, the all-solid state lasers have been commercialized successfully.     

基于GaAs基大功率激光器的热分析

The thermal characteristics of 808 nm Al Ga As/Ga As laser diodes(LDs) are analyzed via electrical transient measurements and infrared thermography. The temperature rise and thermal resistance are measured at various input currents and powers. From the electrical transient measurements, it is found that there is a significant reduction in thermal resistance with increasing power because of the device power conversion efficiency. The component thermal resistance that was obtained from the structure function showed that the total thermal resistance is mainly composed of the thermal resistance of the sub-mount rather than that of the LD chip, and the thermal resistance of the sub-mount decreases with increasing current. The temperature rise values are also measured by infrared thermography and are calibrated based on a reference image, with results that are lower than those determined by electrical transient measurements. The difference in the results is caused by the limited spatial resolution of the measurements and by the signal being captured from the facet rather than from the junction of the laser diode.     

Applications and Technologies of All- Solid-State Blue Laser

1 Introduction Along with the matureness of laser diode (LD) manufacturing technology, the performance of LD has been improved greatly since 1980s, so various kinds of laser devices based on LD have been developed rapidly, especially the all-solid state lasers. After early experiments and researches, the all-solid state lasers have been commercialized successfully. In this paper, the recent technology progress of the all-solid-state blue laser and its applications are reviewed.2 Applic…     

Thermal Interaction in Semiconductor Laser Arrays

A novel theoretical model of thermal diffusion has been established to study thermal interaction between two neighboring diodes in semiconductor laser arrays. The main cause of the ocurrence of the thermal interaction between two neighboring diodes in array devices is the heat conduction through heat sink. We hold that as the devices must have heat sink to diffuse heat, this kind of interaction in the array would always exist. However, when the pitch between two neighboring diodes in the array is reasonably defined, this troublesome thermal interaction can be simply reduced by using our model. Based on the individual diodes with leaky waveguide structure, we experimentally succeeded in fabricating 2D 4 ×4 arrays. The thermal interaction between upper and lower diodes in the 2D array is also considered as well as the function of the heat sink. The measured results show that the pulse peak output powor of the 2D 4 ×4 array is high up to 11 W.     

Application of Various Lasers to Laser Trimming Resistance System

Though the laser trimming resistance has been an old laser machining industry for over 30 years, the development of technology brings new alternative lasers which can be used for the traditional machining. The paper describes application of various lasers to laser trimming resistance system including early traditional krypton arc lamp pumped Nd：YAG to laser, modern popular diode pumped solid state laser and the present advanced harmonic diode pumped solid state laser. Using the new alternative lasers in the laser trimming resistance system can dramatically improve the yields and equipment performance.     

Development of Fiber Lasers and Their Applications

1 Introduction Fiber lasers have been developed for more than forty years since Snitzer!s proposal and the demonstration of Nd- doped fiber in 1961 [1]. But fiber lasers have not been attracted considerable attention until the develop- ment of the low- loss fiber fabrication technology and the high power semiconductor laser technology recently. Actually,it is the application and development of fiber communication technology that has promoted the rapid development of fiber laser. Fiber laser, …     

Characteristic diode parameters in thermally annealed Ni/p-InP contacts

The Ni/p-InP Schottky diodes（SDs） have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700 ℃ for 1 min in N2 atmosphere. Then, the current–voltage characteristics of the annealed and non-annealed（as-deposited） SDs have been measured in the measurement temperature range of 60–400 K with steps of 20 K under dark conditions. After 700 ℃ annealing,an improvement in the ideality factor value has been observed from 60 to 200 K and the barrier height（BH）value approximately has remained unchanged in the measurement temperature range of 200–400 K. The BH of the annealed diode has decreased obeying the double-Gaussian distribution（GD） of the BHs with decreasing measurement temperature from 200 to 60 K. The BH for the as-deposited diode has decreased with decreasing temperature obeying the single-GD over the whole measurement temperature range. An effective Richardson constant value of54:21 A/cm²K² for the as-deposited SD has been obtained from the modified Richardson plot by the single-GD plot, which is in very close agreement with the value of 60 A/K²cm² for p-type InP. The series resistance value of the annealed SD is lower than that of the non-annealed SD at each temperature and approximately has remained unchanged from 140 to 240 K. Thus, it can be said that an improvement in the diode parameters has been observed due to the thermal annealing at 700 ℃ for 1 min in N₂ atmosphere.     

High Power 170 GHz Frequency Doubler Based on Ga As Schottky Diodes

The research on high power 170 GHz frequency doubler based on the Ga As Schottky diodes is proposed in this paper. This basic doubler cell is developed with a 50-μm-thick, 600-μm-wide, and 2-mm-long Al N substrate with high thermal conductivity to reduce the thermal effect. Besides, power combined frequency doubler has been fabricated to improve the power capacity by a factor of two. Great agreement has been achieved between the simulated results based on electrothermal model and measured perfor...     

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calculated using the 2D finite difference time domain(FDTD) algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD) with high-order diffraction gratings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maximum(FWHM) is less than 0...     

利用硅纳米线测量悬臂梁结构应力方法的研究

A silicon（SiNW） nanowire device,made by the bottom-up method,has been assembled in a MEMS device for measuring stress in cantilevers.The process for assembling a SiNW on a cantilever has been introduced.The current as a function of the voltage applied to a SiNW have been measured,and the different resistances before and after cantilever releasing have been observed.A parameter,η,has been derived based on the resistances.For a fixed sample,a linear relationship between η and the stress in the cantilever has been observed;and,so,it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.     

Evaluation of the drain-source voltage effect on AIGaAs/InGaAs PHEMTs thermal resistance by the structure function method

The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.     

Thermal investigation of high-power GaAs-based laser diodes

The thermal characteristics of high-power AlGaAs/GaAs laser diodes (LDs) at high current (2-10 A) are studied with electrical transient method. The temperature rise increases linearly with the current. The thermal resistance of chip is the largest proportion of total thermal resistance. By increasing the width of the chip from 500 to 800 μm, the temperature rise and thermal resistance decrease by 8.5% and 8.8%, respectively.     

Latest advances in high-performance light sources and optical amplifiers on silicon

Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.     

对平板耦合半导体激光器的探索

To obtain a high-power and efficient single-mode laser, a new laser called the slab coupled optical waveguide laser （SCOWL） has been developed. We have simulated its structure and grown the chip with this structure by low-pressure metal organic chemical vapor deposition. We have also produced the broad-area SCOWL and compared it with the traditional structure laser in terms of some performances. This work lays the foundation for further research of ridged lasers with the same structure.     

Cancer Diagnosis System Based on the Spectra of Serum

Autofluorescence spectra from the serum of health man and cancer patients have been measured and analyzed.Two obviously spectra characteristics of the serum have been discussed in detail.A novel laser cancer diagnosis system(LCD-1)has been established and the diagnosis results are compared with clinical methods.     

Thermal Conductivities of Ⅲ-Ⅴ Antimonides

Thermal parameters of various Ⅲ-Ⅴ antimonides, especially the quaternary lattice matched to GaSh or InAs substrates as well as some strained ternaries, have been‘investigated theoretically. Results show that at most composition region many ternary and quaternary antimonides exhibit rather lower thermal conductivity compared to related binaries,and the reason has been discussed. The thermal designing rule of the lasers and other power devices using those antimonides also has been discussed.     

面向太赫兹应用的InP基肖特基二极管

Based on characteristics such as low barrier and high electron mobility of lattice matched In_0.53Ga_0.47 As layer,InP-based Schottky barrier diodes（SBDs） exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones.Planar InP-based SBDs have been developed in this paper.Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved.The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32Ωand 9.1 fF,respectively.They are highly consistent with the calculated values.The performances of the InP-based SBDs in this work,such as low noise and low loss,are promising for applications in the terahertz mixer,multiplier and detector circuits.