Electrical and Optical Coupling in an Electroabsorption Modulator Integrated With a DFB Laser

Electrical and optical coupling in an electroabsorption (EA) modulator integrated with a distributed feedback (DFB) laser have been investigated. The integrated device is treated as a three-port optoelectronic device with two electrical ports and one optical output port. The scattering parameters of this three-port device have been measured in the designed experiment. The measured results indicate that there exists the electrical coupling between the DFB laser and EA modulator of the integrated light source whenever the current applied to the laser section is below or above the threshold current, and the optical coupling will have stronger influence on the frequency responses than the electrical coupling when the bias current is above the threshold. A small-signal equivalent circuit model for the integrated device is established considering both the electrical and internal optical coupling. Experiments show that the equivalent circuit model is reasonable and the determined element values are correct. Based on the measurement and modeling, the influences of the electrical and optical coupling on the high-frequency responses are investigated and the effective measure to eliminate the additional modulation in the DFB laser are discussed.     

端面反射对集成光源高频特性的影响及其抑制

研究了分布反馈型半导体激光器（DFB-LD）与电吸收（EA）调制器集成光源中调制器端面残余反射对器件高频特性的影响及其消除。针对在DFB-LD／EA集成光源小信号调制响应曲线低频段观察到的异常起伏,测量了DFB-LD的强度噪声谱,比较了不同反向偏压下EA调制器的调制响应。实验结果表明,对集成器件调制响应的干扰主要是来自于EA调制器端面的残余反射而不是微波调制信号的串扰。为了抑制调制器端面的光反射,优化了抗反镀膜工艺,基本消除了调制响应的异常起伏,有效改善了集成器件的高频调制特性。     

Distributed feedback laser diode (DFB-LD) to single-mode fiber coupling module with optical isolator for high bit rate modulation

A distributed feedback laser diode (DFB-LD) module for single-mode fiber coupling is described in the 1.5-μm wavelength region. An optical isolator is constructed in the two lens coupling circuit to stabilize the DFB-LD characteristics. It consists of a DFB-LD as a polarizer, a yttrium iron garnet (YIG) plate and an analyzer. Coupling characteristics and attainable isolation of the proposed circuit have been studied theoretically and experimentally. The effect of reflected light on the DFB-LD characteristics such as relative intensity noise (RIN) and oscillation spectrum has been experimentally investigated taking into account the polarization of the reflected light. It has been clarified that the DFB-LD can function as an effective polarizer with an extinction ratio of more than 20 dB. The DFB-LD module was successfully fabricated to have stable spectrum characteristics and to sufficiently suppress the noise caused by reflections. It has been confirmed by a long haul transmission experiment that this module is applicable to large capacity optical fiber transmission systems.     

相干光时域反射仪中受激布里渊散射的抑制

采用对分布反馈半导体激光器(DFB-LD)直接进行小信号电流调制的方法抑制相干光时域反射仪(COT-DR)中的受激布里渊散射(SBS),分析了DFB-LD受到小信号电流调制时的频谱特性以及SBS阈值和频谱宽度的关系,设计了实验电路和光路抑制光纤中SBS。理论分析和实验结果表明,在低频调制电流处,光源频谱宽度随调制频率增加而减小,随调制幅度增加而增加,而SBS随频谱宽度增加而减弱,直接用电流调制激光器可抑制COTDR中的SBS。     

基于低速光调相信号注入DFB-LD产生4～16倍频的40GHz和60GHz毫米波信号

提出一种基于低速光调相信号注入半导体分布反馈激光器(DFB-LD)产生最低4倍频,最高16倍频的40GHz和60GHz的毫米波调相信号。该方案利用注入光的N阶调相边带锁定DFB-LD的波长,同时DFB-LD放大此调相边带并与原注入光信号通过相干差拍作用在LD腔内形成毫米波调相信号。通过理论建模分析了工作原理,经系统实验验证了此方案的可行性。应用2.5,5和10GHz的光调相信号均得到40GHz或60GHz的毫米波信号,实现了最低4倍频,最高16倍频的毫米波信号产生,并通过单边带相位噪声的测量验证了毫米波的频率稳定度。     

基于行波电极电吸收调制􀀂 的高速光脉冲发生模块

速率高于40Gbit/s以上光脉冲发生器件是构建高速宽带光纤通信网络系统的关键，行波型电吸收调制器（TW－EAM）与分布反馈激光器（DFB－LD）的单片集成技术代表该领域的最新发展方向。本文利用准静态等效电路模型对行波型电吸收调制器的微波特性进行了分析并与实验室的实际测量结果进行了比较，得出了比较满意的结果。介绍了TW－EAMDFB－LD性能和最新的研究成果。     

Thermal effects in monolithically integrated tunable laser transmitters

We investigate thermal effects in widely tunable laser transmitters based on an integrated single chip design. The chip contains a sampled-grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) and an electroabsorption modulator (EAM). The thermal impedance of the ridge structure is evaluated through simulation and experiment, and thermal crosstalk between sections is examined. Heating of the mirrors by neighboring sections is found to result in unintentional offsets in wavelength tuning. Thermal effects in the EAM are examined in depth. A positive feedback mechanism causes local temperature rise at the modulator input, with the potential to trigger catastrophic thermal runaway. A self-consistent finite-element model is developed to simulate the EAM temperature profile and device performance. This model is used to optimize the device, resulting in integrated EAMs that achieve a dissipated power limit in excess of 300mW.     

单片集成电吸收调制分布反馈激光器

提出一种选择区域外延双有源区叠层(SAG-DSAL)结构新技术,基于此技术设计研制了单片集成电吸收调制激光器(EML),SAG-DSAL-EML管芯的阈值电流为20mA,工作电流为100mA时的出光功率为10mw,由吸收调制器(EAM)加-3V偏压时的消光比为12dB,实现了简化制作工艺并提高器件性能的预期目的,有望用...     

电吸收调制激光器集成芯片的高频测试

提出了一种精确测试电吸收调制激光器(EML)集成芯片高频特性的方法。待测芯片制作在带有微带线的热沉上,同时采用光探测器作为光电转换器,二者构成待测双口网络。被测双口网络的一端是共面线,使用微波探针作为测试夹具加载信号,另一端是同轴线,两个测试端口不同,不能采用简单的同轴校准方法校准待测系统。测试过程中采用扩展的开路-短路-负载(OSL)误差校准技术对集成器件的测试夹具微波探针进行校准,扣除了测试中使用的微波探针对集成光源高频特性的影响,同时采用光外差的方法扣除了高速光探测器的频率响应对结果的影响,得到集成光源散射参数的精确测试结果。     

Nonlinear interaction between optical pulses from high-repetition gain-switched DFB-LD in optical fiber

Interaction forces between propagating pulse pairs from a gain-switched distributed feedback laser diode (DFB-LD) were investigated. The authors discuss the experimental observation of a nonlinear interaction force between the fiber-compressed, gain-switched optical pulses. Optical pulses were generated by a gain-switched 1.55 mu m DFB-LD at a 10 GHz repetition rate, and compressed by compensating for the red-shifted chirping in the optical pulses using a polarization-holding fiber with a 18.7 ps/km/nm normal dispersion at a 1.55 mu m wavelength. The measured interaction force, which was greater than that theoretically predicted, was caused by the wings and/or pedestal associated with copropagating pulses.<>     

Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules

We have developed 40-Gb/s traveling-wave electroabsorption-modulator-integrated distributed feedback laser (TW-EML) modules using several advanced technologies. First, we have adopted a selective area growth (SAG) method in the fabrication of the 40-Gb/s EML device to provide active layers for the laser and the electroabsorption modulators (EAMs) simultaneously. The fabricated device shows that the measured 3-dB bandwidth of electrical-to-optical (E/O) response reaches about 45 GHz and the return loss (S₁₁) is kept below -10 dB up to 50 GHz. For the module design of the device, we mainly considered electrical and optical factors. The measured S₁₁ of the fabricated 40 Gb/s TW-EML module is below -10 dB up to about 30 GHz and the 3-dB bandwidth of the E/O response reaches over 35 GHz. We also have developed two types of coplanar waveguide (CPW) for the application of the driver amplifier integrated 40 Gb/s TW-EML module, which is a system-on-package (SoP) composed of an EML device and a driver amplifier device in a module. The measured S₁₁ of the two-step-bent CPW is below -10 dB up to 35 GHz and the measured S₁₁ of the parallel type CPW is below -10 dB up to 39 GHz.     

All-Optical Flip-Flop Based on an SOA/DFB-Laser Diode Optical Feedback Scheme

We report on the dynamic all-optical flip-flop (AOFF) operation of an optical feedback scheme consisting of a semiconductor optical amplifier (SOA) and a distributed feedback laser diode (DFB-LD), bidirectionally coupled to each other. The operation of the AOFF relies on the interplay between the optical powers in both the DFB-LD and the SOA. Switching times as low as 150ps for switch pulse energies of around 6 pJ and a repetition rate of 500MHz have been measured. The contrast ratio was measured to be above 12 dB     

Tunable amplification properties of distributed feedback laserdiodes

The tunable amplification properties of a distributed feedback laser diode (DFB-LD) are described. The performance of the laser diode as an optical filter, its tuning range, amplification gain, crosstalk due to submodes, and signal-to-noise ratio are determined. To achieve maximum amplification with the least noise, the DFB-LD injection current is held at or near the threshold value by feedback from an optical detector. The resonant wavelength is precisely controlled over a range of 2.0 nm (154 GHz) by varying the temperature of the DFB-LD, while at the same time the injection current is kept at the optimum value by the feedback system. By using the tunable amplification properties of a DFB-LD, an optical tunable filter was experimentally observed     

High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime

A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was employed as EAM absorption layer. The measured hole lifetimes were 7-11 ps, and the measured frequency chirp (/spl alpha/-parameter) was low or negative at low EAM reverse bias voltages even under high optical output power conditions. Successful 10-Gb/s 80-km normal-dispersion single-mode fiber transmission (chromatic dispersion D=1600 ps/nm) and the record average fiber optical output power (P/sub f/) of +5.3 dBm were achieved at 25/spl deg/C. In addition, semicooled operation of EML at enhanced bit rates has been demonstrated for application in small-form-factor protocol-agnostic optical transceivers. A 10.7-Gb/s 1600-ps/nm transmission was achieved at 45/spl deg/C and P/sub f/=+3.0 dBm.     

10-Gb/s, 80-km SMF Transmission From 0 to 80 $^{circ}$C by Using L-Band InGaAlAs-MQW Electroabsorption Modulated Laser With Twin Waveguide Structure

A 10-Gbit/s, 1.58-mu m, InGaAlAs electroabsorption modulator (EAM) integrated distributed-feedback (DFB) laser (EML) with a twin waveguide (TWG) structure is operated experimentally over a wide temperature range of 0 to 80degC. We introduce an InGaAlAs multi-quantum well (MQW) system for both LD and EAM MQWs, because this material has temperature-tolerant characteristics. These layers are grown using single step epitaxial growth, and the device was fabricated with a very simple process. Moreover, successful transmission through an 80-km single-mode fiber (SMF) was achieved with the device running at up to 80degC. These results confirm the suitability of this type of laser for use as a cost-effective and low-power consumption light source in 10-Gbit/s optical network systems.     

10 Gb/s电吸收调制器的微波封装设计

在高速光电子器件的微波封装过程中，需要综合考虑封装寄生参数和芯片寄生参数对器件高频性能的影响。利用封装寄生参数对芯片寄生参数的补偿作用，成功实现了10Gb／s电吸收调制激光器（EML）的高频封装。通过封装前后芯片和器件的小信号频率响应测试结果对比，器件的反射参数和传输参数有所改善，3dB带宽达到10GHz；并进行了10Gb／s速率的光纤传输实验，经过40km光纤传输后通道代价不到1dBm（误码率为10^-12），满足10Gb／s长距离光纤传输系统的要求。     

Experimental demonstration of uncompressed 4K video transmission over directly modulated distributed feedback laser-based terahertz wireless link

We demonstrate the transmission of uncompressed 4K videos over the photonics-based terahertz (THz) wireless link using a directly modulated distributed feedback laser diode (DFB-LD). For optical heterodyne mixing and data modulation, a DFB-LD was employed and directly modulated with a 5.94-Gb/s non-return-to-zero signal, which is related to a 6G-serial digital interface standard to support ultra-high-definition video resolution. We derived the optimal frequency of the THz carrier by varying the wavelength difference between DFB-LD output and Tunable LD output in the THz signal transmitter to obtain the best transmission performances of the uncompressed 4K video signals. Furthermore, we exploited the negative laser-to-filter detuning for the adiabatic chirp management of the DFB-LD by the intentional discrepancy between the center wavelength of the optical band-pass filter and the output wavelength of the DFB-LD. With the help of the abovementioned methods, we successfully transmitted uncompressed 4K video signals over the 2.3-m wireless transmission distance without black frames induced by time synchronization error.     

Chirp characteristics of 10-Gb/s electroabsorption modulatorintegrated DFB lasers

We present a complete large-signal dynamic model of electroabsorption modulator integrated (EAMI) distributed feedback (DFB) lasers using the time-dependent transfer matrix method. With this model, it is possible to analyze dynamic characteristics depending on optical feedback and spatial hole burning. Also, we can separately calculate the laser and modulator chirp including the voltage-dependent modulator chirp parameter, the grating phase at the end of the laser section, the length of the waveguide region, and electrical coupling. Therefore, our model can provide better predictions regarding the laser and modulator chirp. The calculated large-signal chirp using our model has similar characteristics to the measured large-signal chirp for 10-Gb/s EAMI-DFB lasers     

Integrated Electro-Absorption Modulation DFB Laser Based Optical True Time-Delay Feeder for X-Band Phased Array Antennas

A 4-bit optical true-time-delay feeder incorporating an integrated electro-absorption modulation distributed feedback (DFB) laser for X-band phased array antennas is demonstrated. The integrated electro-absorption modulation DFB laser is an attractive device that provides a very compact, low-cost solution for optical true-time-delay systems. The variable delay line is constructed by cascaded magneto-optic switches, which have fast switching speed. The integrated electro-absorption modulation DFB laser system shows high signal-to-noise ratio up to 58dB, and the transmission performance of the system is relatively good and accredited.     

5-Gb/s performance of integrated light source consisting ofλ/4-shifted DFB laser and EA modulator with SI InP BH structure

The fabrication process and characteristics, including 5-Gb/s transmission, of an integrated light source consisting of a λ/4-shifted distributed feedback laser and an electroabsorption (EA) modulator are discussed. By introducing a semi-insulating (SI) InP on the butt-joint region, both the large electrical isolation resistance (>10 MΩ) between the laser and the modulator and a high optical coupling efficiency (>80%) between them are achieved. A typical threshold current was 50-70 mA, and single-mode operation at 1.576 μm was maintained up to 5.5-mW output power. The modulation voltage to swing between 90% transmission and 10% transmission was 6.2-12 V, depending on the modulator length in the range 1000-400 μm. The 3-dB bandwidth is 7.7 GHz and a linewidth enhancement factor (α) of 0.9 is estimated from the sideband-to-carrier ratio of the spectra