共查询到18条相似文献,搜索用时 62 毫秒
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刘美红 《激光与光电子学进展》2004,41(4):60-61
垂直腔面发射激光器(VCSEL)的基横模可产生高品质高斯光束。该激光器的偏置电流增加时,高横模开始振荡。光束发散加大,光束品质降低。 相似文献
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高功率基横模垂直腔面发射激光器(VCSEL)在光通信、传感、原子频标和光电混合集成等领域有着重要的应用,将光子晶体结构引入到VCSEL中,通过设计结构尺寸和分布,可以有效控制VCSEL的横向模式。课题组将正方形排列的光子晶体结构引入到VCSEL中,实现对VCSEL的横向模式和基横模出光功率控制,获得高基横模出光功率器件。通过采用平面波展开法(PWE)和全矢量三维时域有限差分方法(FDTD)对正方晶格结构光子晶体的合理设计,获得正方形排布光子晶体周期、占空比和刻蚀深度等重要参数。成功地制备出基横模出光功率大于3 mW,边模抑制比大于40 dB的正方晶格光子晶体VCSEL。 相似文献
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单模795 nm垂直腔面发射激光器作为铷原子钟的激光光源,一般采用氧化限制结构获得单模输出。对垂直腔面发射激光器外延结构以及氧化限制孔径进行了优化设计。基于有限元分析方法,利用光纤波导理论和热电耦合模型,对氧化孔径的光学和电学限制进行了模拟,计算分析了实现单模和良好热电特性所需的氧化孔径大小。实验制备了具有不同氧化孔径的器件,并进行了功率-电流以及光谱特性测试。当氧化孔径为1.9μm时,在3~7 mA注入电流下器件始终保持单模输出,边模抑制比大于35 dB;器件保持单模输出的最大氧化孔径为3.8μm,室温下阈值电流为1 mA,最大饱和输出功率为2 mW,斜率效率为0.3 W/A,3 mA注入电流下的出射波长为790 nm,边模抑制比大于30 dB。制备的室温下单模特性良好的790 nm垂直腔面发射激光器,为实现高温下795 nm偏振稳定单模输出提供了可能。 相似文献
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垂直腔面发射激光器(VCSEL)是芯片级原子钟(CSAC)的主流光源,其光束质量会影响CSAC的各项性能。扩展VCSEL内部有效腔长能够以压缩冷腔线宽的方式压窄器件最终辐射激光的线宽,从而可以减小CSAC短时间内的计时频率噪声。根据所计算的VCSEL表面反射谱,将VCSEL中4层下分布式布拉格反射镜(DBR)的厚度由常规的四分之一波长增加至404 nm,压缩了VCSEL冷腔线宽,并生长了对应的外延结构,制备了通过增厚DBR扩展有效腔长的894 nm窄线宽VCSEL。测试结果表明,研制的VCSEL在90℃下波长为893.1 nm,功率为0.335 mW,线宽约为32 MHz,且具有稳定的偏振特性。 相似文献
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A thermo-electric 3-D analysis of 980 nm vertical cavity surface emitting laser (VCSEL) arrays based on the finite element method (FEM) is presented in this paper. High performance VCSEL array structures with square mesas are modeled by applying a steady-state 3-D heat dissipation model. Several oxide aperture diameters (Da), substrate thicknesses, current densities, array sizes, heat flux, and temperature profiles are considered. The analysis shows that the maximum internal temperature of a VCSEL array ranges from 306.5 K for a 20 μm Da, 100 μm substrate thickness, 666 A/cm2 current density, and a 1×1 array size to 412 K for a 5 μm Da, 300 μm substrate thickness, 1200 A/cm2 current density, and a 4×4 array size. 相似文献
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Short-reach optical interconnects among massive serves in data centers have attracted extensive research recently. Increasing capacity, cost and power efficiency as well as wavelength switching between data center network nodes are still key challenges for current optical interconnects. In this work, we experimentally demonstrate the real-time inter-mode optical wavelength switching technique, for high-speed wavelength flexible data center interconnects. A 10 Gbit/s 1 550 nm single mode vertical cavity surface emitting laser (VCSEL) is optically injected and used to control a 10 Gbit/s multimode VCSEL carrier at 850 nm. Results show that a clearly open eye diagram is achieved at back-to-back analysis, implying a successful wavelength switch and error-free operation at 10 Gbit/s. A fully optical wavelength conversion of a multimode VCSEL operation at 850 nm using a single mode VCSEL subject to external optical injection at 1 550 nm is reported. This work opens new perspectives towards the development of a cost effective high-speed real-time inter-band wavelength switching technique between servers and network devices operating at different transmission windows at network nodes, for current and future optical interconnects. 相似文献
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Tajiri A. Minakuchi K. Komeda K. Bessho Y. Inoue Y. Yodoshi K. Yamaguchi T. 《Electronics letters》1993,29(4):369-370
A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimising its structure with a 0.8 mu m thick p-cladding layer, a 1200 mu m long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 degrees C was confirmed for more than 1200 h. Optical feedback noise was below 3*10/sup -14/ Hz/sup -1/.<> 相似文献
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为改善高功率垂直腔面发射激光器(VCSEL)电流注入均匀性,提高光束输出质量和器件的输出功率,设计并研制出808nm高功率网状电极VCSEL。将VCSELP面的注入电极由传统的环形结构改为网状结构并且热沉位于N面电极。实验制备了出光孔径同为500um的传统环形电板和网状电极两种高功率VCSEL,并对器件的性能进行了对比测试。测试结果表明,网状电极结构高功率VCSEL相对传统环形电极结构高功率VCSEL器件具有良好的光电特性,室温下新结构高功率VCSEL的阈值电流为430mA,斜率效率为0.44mW/mA,电光转换效率可达21.7%,最大输出功率可达420mW,是传统结构高功率VCSEL输出功率的2.27倍。 相似文献
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对单横模激射的光子晶体垂直腔面发射激光器的设计具有指导作用。把单横模光子晶体光纤理论用于光子晶体微腔,分析有效归一化频率随晶格常数和填充比的变化关系;采用时域有限差分方法计算二维空气孔型三角结构光子晶体的完全带隙。利用上述计算结果,选取合适的光子晶体结构参数,实现单横模激射。从载流子数面密度和光子数面密度的速率方程出发,分析了光子晶体的引入对激光阈值的影响。 相似文献
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Ueki N. Sakamoto A. Nakamura T. Nakayama H. Sakurai J. Otoma H. Miyamoto Y. Yoshikawa M. Fuse M. 《Photonics Technology Letters, IEEE》1999,11(12):1539-1541
The authors have fabricated oxide-confined vertical-cavity surface-emitting lasers with metal apertures exhibiting a spatial mode filtering effect. Single-mode continuous-wave output is enhanced up to 3.4 mW by this effect for AlGaAs-based 780-nm vertical-cavity surface-emitting lasers with a 3.5-μm-diameter oxide aperture. From numerical calculations, the round-trip loss difference between zeroth- and first-order optical modes as a function of metal aperture size indicates that there is an optimum point; a 4-μm metal aperture size is suitable for higher order mode suppression of a 3.5-μm oxide aperture device 相似文献
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Kettler T. Posilovic K. Schulz O. Karachinsky L.Ya. Novikov I.I. Shernyakov Yu.M. Kuznetsov S.M. Gordeev N.Yu. Maximov M.V. Ben-Ami U. Sharon A. Mikhrin S.S. Kovsh A.R. Shchukin V.A. Kop'ev P.S. Ledentsov N.N. Pohl U.W. Bimberg D. 《Electronics letters》2006,42(20):1157-1158
GaAs/AlGaAs 850 nm range lasers based on a longitudinal photonic bandgap crystal waveguide show narrow vertical far-field pattern. Vertical and lateral beam divergence with FWHM below 10deg and 5deg, respectively, is demonstrated for 4 mum stripe width, being independent on injection current. Excellent beam quality with M2 =1.4, low internal losses of 1.4 cm-1 and high differential quantum efficiency of 83% are observed 相似文献
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Li-Hong Laih H.C. Kuo Gong-Ru Lin L.-W. Laih S.C. Wang 《Photonics Technology Letters, IEEE》2004,16(6):1423-1425
We report the utilization of an As/sup +/-implanted AlGaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As/sup +/-implanted device showed a four-fold increase over the nonimplanted one at the As/sup +/ dosage of 1/spl times/10/sup 16/ cm/sup -3/ and the oxidation temperature of 400/spl deg/C. 50 side-by-side As/sup +/-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of /spl Delta/I/sub th//spl sim/0.2 mA and slope-efficiency of /spl Delta/S.E./spl sim/3%. 相似文献