ZnS:Eu/ZnS核/壳结构量子点自发辐射性能研究

利用水溶性前驱体材料在水性介质中制备了ZnS:Eu和ZnS:Eu/ZnS核/壳结构量子点,并利用XRD、TEM和PL对ZnS:Eu和ZnS:Eu/ZnS核/壳结构量子点的结构和发光性能进行了研究.ZnS:Eu和ZnS:Eu/ZnS量子点XRD谱显示:ZnS:Eu和ZnS:Eu/ZnS量子点具有β-ZnS结构,且随着Zn...     

核/壳结构ZnS:Mn/ZnS量子点光发射增强研究

利用水溶性前驱体材料在水性介质中制备了ZnS:Mn和ZnS:Mn/ZnS核/壳结构量子点(QDs,quantum dots),并用X射线衍射(XRD)、光致发光(PL)对ZnS:Mn和ZnS:Mn/ZnS核/壳结构QDs的结构和发光性能进行研究.ZnS:Mn和ZnS:Mn/ZnS QDs XRD谱与标准谱吻合,根据De...     

不同核心尺寸及壳层厚度CdTe/CdS量子点非线性光学及超快动力学特性

CdTe核壳结构半导体量子点具有特殊的非线性光学和超快动力学特性,使其在太阳能电池、光电子器件、生物标记和光纤传感领域有着广泛的应用前景。主要研究了6种不同核心尺寸、不同壳层厚度CdTe/CdS核壳结构半导体量子点的非线性光学和超快动力学特性。在波长400 nm、脉冲宽度130 fs激光脉冲作用下采用Z-Scan技术测量了样品的非线性吸收和非线性折射系数。实验结果表明,CdTe/CdS核壳结构量子点的壳层厚度影响非线性吸收和非线性折射特性,非线性吸收和非线性折射系数均随壳层厚度增加而增大。核心尺寸主要影响非线性吸收特性,非线性吸收系数随核心尺寸的增大而减小。在波长400 nm、脉冲宽度130 fs、频率1 kHz、单脉冲能量400 nJ条件下采用飞秒时间分辨瞬态吸收光谱技术测量了样品的超快动力学特性,得到了瞬态吸收光谱和超快动力学曲线。结果表明漂白信号上升过程时间随壳层厚度的增加而变大。快过程衰减时间随着壳层厚度的增加而变大,同时随着核心尺寸增加而增长;慢过程衰减时间随着壳层厚度的增加而变大。研究揭示了CdTe核壳结构量子点的核心尺寸、壳层厚度对非线性光学和超快动力学的影响规律,为核壳结构量子点的制备和光物理特性研究提供了理论基础。     

CdTe和CdS量子点的非线性特性对比

应用Top-hat Z-scan技术在波长为532 nm,脉宽为190 fs激光脉冲下研究了CdTe和CdS量子点的光学非线性吸收和非线性折射特性。实验结果表明:在飞秒激光脉冲作用下,CdTe量子点的非线性吸收表现为饱和吸收,CdS量子点表现为反饱和吸收。CdTe量子点的非线性折射表现为自散焦,CdS量子点表现为自聚焦。尺寸分别为2.6、2.4 nm的CdTe量子点和CdS量子点的非线性吸收系数分别为-9.2610-14、0.7810-14 m/W,非线性折射率系数分别为-0.8610-20、1.4610-20 m2/W,三阶非线性极化率分别为2.7210-15、1.3610-15 esu。表明相近尺寸下不同材料的镉类半导体量子点的光学非线性吸收和非线性折射特性不同,并对其机理进行分析。     

荧光波长可调的InP/ZnS量子点的制备及其色彩转换研究

以三(二甲胺基)膦为膦源,氯化铟为铟源,采用热注射法制备波长可调的无毒InP/ZnS量子点,研究了反应物P与In的摩尔比、ZnI2和ZnCl2的摩尔比以及ZnS的反应时间对合成的InP/ZnS量子点微观结构和光学性能的影响.实验结果表明,在反应物摩尔比为nP3-∶nIn3+=5:1、ZnS反应时间为60 min时,合成...     

掺杂ZnS基量子点的制备和发光性能研究

本文采用水热法制备了掺杂ZnS量子点,并通过粒度分布测试、荧光发射光谱分析对量子点进行了测试和表征。制得的掺杂ZnS量子点具有稳定的粒度分布和优异的发光性能,可用于光致发光、电致发光、磷光体等领域。     

多种ZnO纳米结构和ZnO/ZnS核壳结构的制备

以Zn(NO3)2.6H2O和CO(NH2)2为原料,采用均匀沉淀法,制备出了棒状、花状、球状纳米氧化锌(ZnO)。将ZnO微球体分散在Na2S溶液中,通过离子替代法,成功制备了ZnO/ZnS核壳结构。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能谱仪(EDS)等测试手段对ZnO纳米结构和ZnO/ZnS核壳结构的晶体结构和表面形貌进行了表征,初步探讨了纳米ZnO和ZnO/ZnS核壳结构的生长机理。根据测试结果得知,ZnO纳米棒呈现六方纤锌矿结构,随着Zn2+浓度逐渐增加,ZnO纳米结构形貌由单分散的棒状聚集成花状,最后演变成球形。ZnO/ZnS复合结构为内核ZnO,外面包覆一层ZnS的核壳结构。所有的纳米ZnO均具有相似的发光特点,ZnO/ZnS核壳结构的发光性能有了很大的改善。     

高荧光效率深红色硒化镉核壳量子点的制备

采用二次注入镉前驱体的方法,以十八烯(ODE)为 溶剂,通过优化前驱体注入速度、摩尔比等实验条件, 抑制量子点(QDs)生长的奥斯瓦尔德熟化过程,制备出粒径7.5n m以上,发光效率在15%左右的硒化镉(CdSe)QDs 核;通过对制备的QDs核进行包覆,形成了CdSe/ZnCdS的核壳结构;获得了单分散性的荧 光波长大于 660nm且发光效率高达43%的深红光QDs。所制备的QDs有望在生物影 像和植物工厂等领域得到应用。     

CdS/CdTe叠层太阳电池的制备及其性能

CdS/CdTe太阳电池是薄膜太阳电池研究工作的一个重要方向.为了提高开路电压Voc、改善电池的光谱响应,进而提高电池的转换效率,在此提出CdS/CdTe叠层太阳电池结构.文中,叠层电池的顶电池由CdS/CdTe超薄层构成;底电池由CdS/CdTe薄膜层构成.经分析测试,实验制备的CdS/CdTe叠层太阳电池具有明显的叠层结构,开路电压最高达到了852mV,短路电流密度最大为13mA/cm2,填充因子最高为55.2%,这种叠层电池的效率达到了8.16%(0.071cm2).研究表明相对于传统的单层CdS/CdTe太阳电池,CdS/CdTe叠层电池的制备对研究如何提高CdS/CdTe太阳电池的光伏性能有一定的参考价值.     

CdTe和CdTe/CdS量子点的量子尺寸效应

利用水热法合成了三种不同尺寸的单核CdTe量子点和核壳CdTe/CdS量子点。应用Top-hat Z-scan技术在纳秒、皮秒、飞秒激光脉冲作用下研究了三种不同尺寸单核CdTe量子点的非线性吸收特性。实验结果表明:在不同激光脉冲作用下三种不同尺寸的CdTe量子点的非线性吸收特性均表现为饱和吸收,并且均呈现出随着量子点尺寸的减小,其非线性吸收特性增大的趋势。为了进一步研究量子点尺寸的变化对非线性吸收特性的影响,又在飞秒激光脉冲作用下研究了核壳CdTe/CdS量子点的非线性吸收特性;随着包壳时间的增加,壳层厚度增加,量子点尺寸增加,其非线性吸收特性呈减小趋势,并且核壳CdTe/CdS量子点的非线性吸收特性明显优于单核CdTe量子点;分析讨论了单核CdTe量子点与核壳CdTe/CdS量子点的非线性吸收特性和量子尺寸效应机制,实验结果表明合成的量子点样品均具有良好的量子尺寸效应。     

CdTe/CdS core shell quantum dots for photonic applications

In this work, we show a simple experimental procedure to obtain CdTe/CdS (diameter=3-7 nm) core shell nanocrystals in colloidal suspension. The nanocrystals were characterized by transmission electronic microscopy and powder X-ray diffraction analysis. The optical properties were determined by electronic absorption, excitation and emission spectroscopies and are discussed in terms of chemical changes that occur at the surface of the particles.     

Facile synthesis of high-quality ZnS,CdS, CdZnS,and CdZnS/ZnS core/shell quantum dots: characterization and diffusion mechanism

Binary CdS and ZnS and ternary CdZnS alloy quantum dots (QDs) were synthesized via a simple, inexpensive, and reproducible route using sulfur, cadmium stearate, and zinc stearate as precursors and N-oleoylmorpholine as the reaction medium and solvent. Both binary and ternary QDs exhibited a narrow size distribution and high crystallinity as confirmed TEM and HRTEM images. The alloy QDs exhibited excellent composition-dependent optical properties and a narrow full-width at half maximum of 19–21 nm. UV-visible absorbance and photoluminescence (PL) emission spectra of the CdZnS QDs showed a blue shift during growth, indicating the formation of alloy QDs. ZnS shells were successively coated onto the alloy core via decomposition of zinc diethyldithiocarbamate at a relatively low temperature. The CdZnS/ZnS core/shell QDs obtained showed a significant increase in size and exhibited strong band edge emission with a significant increase in PL quantum yield. XRD patterns revealed that all the QDs had a zinc blende structure. The QD diffraction peaks gradually shifted to higher angle in the order CdS < CdZnS < CdZnS/ZnS < ZnS. The mechanism for the synthesis of CdZnS alloy and CdZnS/ZnS core/shell QDs is discussed.     

Raman spectra of CdTe/ZnTe self-assembled quantum dots

In this paper, we present Raman scattered spectra and results of photoluminescence (PL) measurements of CdTe/ZnTe self-assembled quantum dots (SAQD). The PL spectrum displayed two main emission peaks, both connected with the existing of QDs. One presents direct deexcitation to ground state and the other is optical phonon (ω=204.2 cm^?1)-assisted deexcitation. The registered multiphonon (MP) emission process depends on temperature. At low temperature, one-phonon spectra shows line at 200.4 and 210.3 cm^?1 (ZnTe LO mode confined by degenerate superlattices), 217 cm^?1 (TA+LO in ZnTe) and 386 cm^?1 (LO+TO(Γ) in ZnTe).     

Electrical conduction mechanisms of CdTe quantum dots/p-si heterojunction

CdTe quantum dots (QDs) are prepared on p-Si substrates using thermal evaporation technique. Current–voltage (I–V) characteristics of Au/CdTe QDs/p-Si/Al heterojunction are measured in a temperature range 304–368 K. The results show that the device has a rectification behavior with a rectification ratio being 275 at ±1.5 V. We determine the electrical conduction mechanisms of the heterojunction. At forward voltages V<0.3 V, the thermionic emission becomes the main mechanism, where in this voltage range, it is possible to estimate the barrier height and the ideality factor. At a forward voltage range 0.5<V<0.9 V, the conduction mechanism turns into the space charge limited conduction which is dominated by an exponential trap distribution (TSCLC). Within this voltage range 0.5<V <0.9, the total density of the trap states is calculated. At forward voltages 0.95<V<1.5 V, Poole-Frenkel conduction mechanism fits well with the experimental data. It is found that there are two trap levels with zero fields of the activation energy which have values 0.16 and 0.46 eV. At the reverse applied voltages, it is also found that the main source of the reverse current is the generation-recombination through p-Si rather than through the interface of the thin film itself.     

CdS/CdTe叠层太阳电池的制备及其性能

CdS/CdTe太阳电池是薄膜太阳电池研究工作的一个重要方向.为了提高开路电压Voc、改善电池的光谱响应,进而提高电池的转换效率,在此提出CdS/CdTe叠层太阳电池结构.文中,叠层电池的顶电池由CdS/CdTe超薄层构成;底电池由CdS/CdTe薄膜层构成.经分析测试,实验制备的CdS/CdTe叠层太阳电池具有明显的叠层结构,开路电压最高达到了852mV,短路电流密度最大为13mA/cm2,填充因子最高为55.2%,这种叠层电池的效率达到了8.16%(0.071cm2).研究表明相对于传统的单层CdS/CdTe太阳电池,CdS/CdTe叠层电池的制备对研究如何提高CdS/CdTe太阳电池的光伏性能有一定的参考价值.