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1.
冯立强  刘航  刘辉 《激光技术》2017,41(4):467-472
为了了解H2+分子辐射谐波的空间分布,采用数值求解非玻恩-奥本海默近似的薛定谔方程,进行了空间均匀和非均匀激光场下H2+分子谐波辐射的空间分布研究。结果表明,在空间均匀场下,正向H核辐射谐波强度高于负向H核;在空间非均匀场下,由于金属结构表面出现的等离子共振增强现象,谐波截止能量得到延伸;负向H核辐射谐波强度明显高于正向H核,随后通过电离几率、电子布局、电子波函数以及谐波辐射的时频分析可以给出H2+分子谐波空间分布的合理解释。通过叠加谐波谱上的谐波,可获得一个脉宽为36as的超短孤立阿秒脉冲。该研究对分子谐波的空间分布及阿秒脉冲的输出是有帮助的。  相似文献   

2.
刘航  李义  冯立强 《激光技术》2018,42(2):145-150
为了了解H2+谐波辐射的过程,采用数值求解非玻恩-奥本海默近似薛定谔方程的方法,理论研究了H2+在10fs/800nm红外激光与6fs/30nm远紫外激光驱动下谐波辐射的特点。结果表明,谐波辐射的贡献主要来源于拉比振荡、多光子共振电离、电荷共振增强电离以及离解态电离;随着远紫外光的加入,谐波光谱呈现能量间隔为远紫外光子能量的多重谐波截止结构;当远紫外光与红外激光的延迟时间大于零或小于零时,谐波光谱呈现红移和蓝移的现象。该研究对理解分子谐波辐射过程是有帮助的。  相似文献   

3.
刘航  冯立强 《激光技术》2020,44(6):721-725
为了了解核运动对H2+和T2+谐波辐射强度及产生阿秒脉冲的影响,采用数值求解薛定谔方程的方法,理论研究了10fs和20fs激光驱动下H2+和T2+谐波截止能量附近强度的变化。结果表明,短脉宽驱动下谐波强度满足H2+>T2+;而长脉宽驱动下谐波强度满足T2+>H2+;根据谐波强度变化规律,在最佳谐波辐射强度下引入半周期激光场可以获得高强度、高能量的谐波平台区,进而获得脉宽为37as的阿秒脉冲。该研究为探测同位素分子及产生高强度及高能量的阿秒脉冲提供了一种新的方案,对激光光学的发展有一定帮助。  相似文献   

4.
为了研究燃烧驱动DF/HF化学激光器燃烧室内H2/NF3(或D2/NF3)的混合燃烧特性,搭建了小型燃烧室平台。采用火焰荧光光谱法对燃烧室内H2/NF3燃烧火焰的形状和温度分布进行了测量和分析,光谱测量结果表明:在紫外可见光谱区域,H2/NF3燃烧火焰的自发光主要由N2(B)、NF(b)、NH(A)等电子激发态分子的辐射跃迁产生,其中N2(B)和NH(A)是燃烧过程中的关键物质成分,其发光强度可以很好地表征火焰燃烧的剧烈程度,可以用于定量测定燃烧火焰的长度;在近红外光谱区域,H2/NF3燃烧火焰自发光的光谱主要由HF(v)振动激发态分子的第一泛频振动转动跃迁谱带组成。利用HF(v=2→v=0)谱带的转动结构强度分布,结合电动平移台,给出了火焰温度沿气流方向的分布情况。考察了气体配比系数(NF3与H  相似文献   

5.
刘航  冯立强 《激光技术》2019,43(1):53-57
为了增强高次谐波光谱及阿秒脉冲的强度,采用数值求解薛定谔方程的方法,理论研究了H2+在抽运探测激光驱动下高次谐波辐射特点。结果表明,在抽运激光驱动下,H2+首先被激发到多光子共振电离区间,进而增大电离几率; 随后在探测激光驱动下,谐波辐射强度得到增强; 当采用不对称非均匀激光场时,谐波截止频率可以进一步延伸,并且谐波平台区只由单一谐波辐射能量峰贡献; 最后通过叠加傅里叶变换后的谐波可获得脉宽在32as的脉冲。该研究对单个阿秒脉冲的产生是有帮助的。  相似文献   

6.
刘静  聂琨璞  杨蛟  王浟  安国斐  戴康 《激光技术》2022,46(5):702-707
为了讨论缓冲气体对碱原子精细结构能级间的能量交换加速作用, 利用激光感应荧光光谱对Cs(Rb)-N2系统中的精细结构碰撞能量转移过程进行了实验研究, 获得了不同条件下碱原子D1线和D2线的荧光变化数据。结果表明, 在Cs-N2系统中, N2分子更多参与精细结构能量交换的加速过程; 在340K时, 系统具有高的荧光转换效率; 在Rb-N2系统中, N2分子主要参与猝灭过程, 对精细结构碰撞的增益作用不明显。这一结果可为半导体抽运碱金属激光器的高效运行提供参考数据。  相似文献   

7.
楼森豪  黄运米  王俊  段延敏  唐定远  朱海永 《红外与激光工程》2022,51(6):20210601-1-20210601-5
报道了采用真空烧结法结合热等静压技术制备的Nd:Y2O3透明陶瓷的荧光光谱特性及相关激光输出。通过与Nd:YAG透明陶瓷的荧光光谱对比,表明Nd:Y2O3透明陶瓷的4F3/2-4I11/2跃迁光谱存在着多个增益相当的谱线,这更有利于实现同时双波长段激光振荡;不同斯塔克子跃迁光谱的离散特性有利于通过腔镜镀膜控制不同波长损耗,获得丰富的1.0~1.1 μm波段激光。利用简单的平平两镜腔结构完成进一步的实验,通过选择的输出镜片镀膜获得了输出功率3.62 W、转换效率40.4%的1074.6 nm和1078.8 nm的双波长输出和输出功率1.7 W、转换效率19.4%的1130.3 nm波长输出。  相似文献   

8.
实验研究了双色场条件下CO2 分子高次谐波辐射, 通过改变充气气压获得偶次谐波最大为28th。此外,通过变化气体盒内激光焦点位置从而显著改变24th 谐波光子能量。实验发现在气体盒內谐波强度存在两个极大值,这是因为不同区域内相位匹配出现长短轨道选择的结果。实验结果表明,双色场驱动的分子高次谐波可成为具有发展前景的多波长可调谐相干XUV 光源。  相似文献   

9.
利用高温固相法制备了BaGa2O4∶Cr3+,Sm3+(BGO∶Cr,Sm)近红外长余辉发光(PersL)材料,考察了Sm3+掺杂浓度和煅烧温度对BGO∶Cr,Sm晶体结构和发光性能的影响,初步探讨了近红外余辉发光机理。结果表明:当长余辉发光材料组成为BGO∶Cr0.06,Sm0.004且煅烧温度为1100℃时,可以获得高纯度的BGO∶Cr,Sm长余辉发光材料,其发射波长为734 nm。Cr3+与Sm3+共掺杂为应用于生物成像的BGO提供了优化策略,同时为开发长余辉发光材料提供了良好范例。  相似文献   

10.
为评估辐照对Cr:MgAl2O4晶体光谱特性的影响,采用辐照剂量为100 Mrad的60Co γ射线照射抛光后的Cr:MgAl2O4晶体样品片,测量了辐照前后的拉曼光谱、透射光谱和荧光特性,并对辐照前后光谱变化的原因进行了分析。研究结果表明:样品的拉曼振动峰值的位置和强度都受到辐照的影响,但振动峰的数量没有改变;由于色心的吸收,辐照后250~600 nm波长范围内的透射率均明显降低;辐照前后样品的荧光发射峰位一致,但辐照后荧光强度明显降低,同时辐照后的荧光寿命显著增加。  相似文献   

11.
By means of a detailed analysis of the v2 infrared band of D218O, it has been possible to assign most of the FIR emissions reported in the literature. Moreover, two FIR laser lines which fall in the range of tunability of the CW waveguide CO2 laser have been predicted and observed. The frequency of the stronger line was measured and found to be 2611.4185(10) GHz, thus filling a gap in the presently available comb of FIR laser lines whose frequencies have been measured. The wavelength precision of the assigned lines was improved by about two orders of magnitude  相似文献   

12.
Thermal tuning of a Tm3+:Ho3+:SiO2 glass fiber laser was investigated. As a function of fiber length and temperature, the emission wavelength can be varied between 1960 and 2032 nm. The bandwidth of the laser emission is about 2 mm. Besides the wavelength also the change of threshold and slope efficiency with temperature and fiber length and the fiber absorption were measured  相似文献   

13.
The dependence of the first Stokes stimulated Raman conversion efficiency of fourth-harmonic radiation from a Nd:YAG laser at 266 nm has been studied for the isotopic species H2, HD, and D2 as a function of gas pressure and laser energy using a low numerical aperture (~4.5×10-3) pumping geometry. While the laser energy threshold for first Stokes conversion is seen to vary significantly between the species it has been found that photon conversion efficiencies of at least 50% can be achieved for all of them for laser pump energies at 266 nm ⩽50 mJ/pulse. This study provides a new measurement of the differential cross section for stimulated Raman scattering in HD of 8.1±2.4×10-29 cm2/sr at 266 nm and at high pressures, and agreement is found with previous measurements of the cross sections for H2 and D2. The results have been used to optimize the laser transmitter system for a differential absorption lidar (DIAL) system to measure tropospheric ozone concentration profiles  相似文献   

14.
Stimulated rotational Raman conversion has been efficiently demonstrated in all three molecular hydrogen isotopes with a 532-nm Q-switched pump source. Optimum gas pressures and pump focusing have been determined. Single pass conversion efficiencies of 80%, 75%, and 65% have been achieved at the first Stokes wavelengths with H2 , D2, and HD, respectively. The maximum efficiency is generally limited by further Raman conversion of the initially generated Stokes light. The thresholds were found to increase in the order H2 22. The relative thresholds of H2 and D2 are reasonably consistent with the calculated steady-state gains based on the population statistics and the linewidth data. Intermediate frequency shifts such as these may be useful by themselves, or in combination with other nonlinear techniques, as methods to achieve specific wavelengths for system applications  相似文献   

15.
In this paper, the I-V characteristics of silicon n+-n --n+ diode are investigated as a parameter of the length of the n- region. This diode with shorter n- region than 1 μm has the ohmic characteristics until reaching high electric field in spite of the existence of numerous space-charges in the n- region, for the first time in this report. This conductance of the diode is inversely proportional to the third power of the length of the n- region. The experimental results are in good agreement with an analytical calculation including the diffusion term of carriers injected from the n+ regions to the n- region. However, the diode with longer n- region than 2 μm shows the space-charge-limited conduction which is the same as earlier reports  相似文献   

16.
In this paper, the effects of nitrogen coimplantation with boron into p+-poly gate in PMOSFETs on the agglomeration effects of CoSi2 are studied. The thermal stability of CoSi2/poly-Si stacked layers can be significantly improved by using nitrogen implantation. Samples with 40-nm cobalt silicide (CoSi 2) on 210-nm poly-Si implanted by 2×1015/cm 2 N2+ are thermally stable above 950°C for 30 s in N2 ambient. If the dose of nitrogen is increased up to 6×1015/cm2, the sheet resistance of CoSi2 film is not increased at all, and TEM photographs show that the agglomeration of CoSi2 film is completely suppressed  相似文献   

17.
We have demonstrated that passive self-injection control is very effective in a CW Ti3+:Al2O3 laser to produce high efficiency (η~15%), narrow-line, two-wavelength emission. Light reinjection is achieved with an original high-resolution two-wavelength selector combining an interference wedge and a grazing incidence grating. The device operates outside the main nonselective laser cavity; thus avoiding insertion losses and optical damage problems. A 1.5 W, background free, total output power has been obtained simultaneously at two narrow laser lines (fwhm: 8 pm), independently tunable over 50 mn. The two laser lines can be emitted in a single beam or in two separated beams. Self-injection wavelength control has been demonstrated both for linear and for ring laser cavities. In the latter case, unidirectional behavior is also obtained in the same way. Single-step (5s2S1/2-5P2P1/2,3/2 ) and two-step (5s2S1/2-5p2P3/2-5d2 D3/2,5/2) excitation of atomic rubidium vapor has been performed with our original laser device  相似文献   

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