湿法炼锌溶液中铜的选择性吸附机理及行为

湿法炼锌过程中铜的高效提取对提高有价金属综合回收率及缓解铜资源紧张局面具有重要意义.针对湿法炼锌溶液中铜的选择性分离困难、有机物污染严重等问题,采用亚胺二乙酸基螯合树脂开展了铜的选择性吸附富集研究.结果表明:单一金属离子体系中,在不同酸度、不同时间和不同初始离子浓度条件下,亚胺二乙酸基螯合树脂对Cu2+的吸附能力均强于Zn2+;亚胺二乙酸基螯合树脂对Cu2+、Zn2+的吸附等温线符合Freundlich模型,为多分子层吸附;吸附动力学服从准二级模型,吸附机制主要为化学吸附;离子交换过程受膜扩散步骤控制.竞争金属离子体系中,Cu2+的分布系数显著高于Zn2+的分布系数,Cu2+、Zn2+之间的分离系数随锌铜浓度比的升高而降低,因此,树脂可将湿法炼锌溶液中的Cu2+选择性分离且提高Cu2+浓度有利于增强选择性分离效果.树脂负载的Cu2+可用质量分数为10％的稀H2 SO4溶液解吸,解吸30 min时解吸率为93.1％.     

化学镀铜的物理化学

实验确定了化学镀铜的最佳工艺与配方，研究了化学镀铜的热力学及动力学机理.结果表明：从热力学数据分析看，还原剂的电极电位皆比铜离子负，用甲醛、次亚磷酸钠做还原剂还原Cu²⁺在热力学上是可行的，在碱性溶液中对化学镀铜反应有利；从阴极极化曲线的Tafel斜率分析看，Cu²⁺=Cu⁺步骤为阴极反应的速度控制环节；从镀液的旋转圆盘电极测试结果分析看，电子跃迁步骤H₂C(OH)O^-→HCOOH+1/2H₂+e^-为镀液中阳极反应速度的控制性步骤.     

花生壳活性炭对溶液中Cu2+和Ni2+的吸附性能

以花生壳为原料制备花生壳活性炭,进行了吸附去除水溶液中Cu2+和Ni2+的试验.研究了活性炭投加量、吸附时间、溶液pH、初始Cu2+和Ni2+质量浓度等因素对花生壳活性炭去除Cu2+、Ni2+作用的影响.结果表明,花生壳活性炭对重金属的吸附是一个快速反应过程,可在60min内达到平衡.花生壳活性炭的投加量和溶液的pH对吸附效果有很大的影响,去除率随pH上升而增加,铜离子适宜的pH范围宽于镍离子.花生壳活性炭是一种廉价、有效的吸附剂,对溶液中铜离子的去除效果好于镍离子.     

花生壳活性炭对溶液中Cu~(2+)和Ni~(2+)的吸附性能

以花生壳为原料制备花生壳活性炭,进行了吸附去除水溶液中Cu2+和Ni2+的试验。研究了活性炭投加量、吸附时间、溶液pH、初始Cu2+和Ni2+质量浓度等因素对花生壳活性炭去除Cu2+、Ni2+作用的影响。结果表明,花生壳活性炭对重金属的吸附是一个快速反应过程,可在60 min内达到平衡。花生壳活性炭的投加量和溶液的pH对吸附效果有很大的影响,去除率随pH上升而增加,铜离子适宜的pH范围宽于镍离子。花生壳活性炭是一种廉价、有效的吸附剂,对溶液中铜离子的去除效果好于镍离子。     

印刷电路板化学镀铜液回收EDTA的研究

介绍一种印刷电路板化学镀铜废液回收EDTA的方法.利用化学镀铜废液中残留的HCHO,采用在强碱条件下还原除铜,调整废液的pH回收EDTA.该方法Cu的去除率达99.6%,EDTA的回收率大于98%;用回收的EDTA制备EDTA-Na2,纯度大于98.5%.实现化学镀铜废液的回收和循环使用.     

壳聚糖对微量金属离子吸附作用研究

研究了壳聚糖对溶液中Mn2+、Fe2+、Cu2+、Zn2+四种常见微量金属离子的吸附作用,通过吸附率、溶液pH等参数,表征了壳聚糖的吸附能力及其对离子的选择性吸附,其选择性次序为:Cu+2＞Zn2+＞Fe+2＞Mn+2,为壳聚糖处理污水中的微量金属离子作了有意义的探索.     

Na2SiO3对碱性硫脲溶液选择性溶金的影响

采用电化学方法研究Na2SiO3浓度对碱性硫脲浸金的影响和金及其常见伴生元素银、铜、镍、铁在含有Na2SiO3的碱性硫脲溶液中的电化学行为．研究结果表明：加入Na2SiO3在很大程度上提高了金的溶解电流，Na2SiO3的最佳浓度为0．15mol／L分析不同电势时lgJ与lgc(Na2SiO3)之间的关系可得：在电势为0．42V时，Na2SiO3对碱性硫脲溶液电化学溶金的促进作用最显著，含Na2SiO3的碱性硫脲溶液对金的溶解具有一定的选择性；在电势为0．58V时溶金效果最佳。金、银、镍和铁的阳极电流密度分别为2．49，1．22，1．03和0．09mA／cm^2；而同时加入Na2SiO3；和Na2SO3时碱性硫脲溶液选择性溶金的最佳电势负移至0.42V，对金的选择性溶解更为明显，金、银、铜、镍和铁的溶解电流密度依次为3．83，1．13，0．73，0．14和0．09mA／cm^2，金的溶解电流密度分别是银、铜、镍和铁的3．4，5．2，27．3和42．6倍．     

紫外分光光度法测定金硫脲浸出液中的铜

确定了在硫脲 ( Tu)介质中用紫外分光光度法测定铜的条件 .在λ=30 0 nm处 ,Cu2 +-Tu络合物具有较强吸收 ,而 Tu无紫外吸收 .当硫脲含量在 5 0 0 mg/ L,p H2 .0 ( HCl)时 ,Cu2 +质量浓度在 0 .5～ 1 0 mg/ L范围内遵守比尔定律 .Na+、K+、Ca2 +、Mg2 +、Cl-、NO- 3 、SO42 -、F-等不干扰测定 ,Au3 +、Ag+干扰较小 ,Fe3 +的干扰可用 F- 离子掩敝 .应用该法测定了几种金矿硫脲浸出液中铜的含量 ,与原子吸收法进行比较 ,相对偏差不大于± 3% .     

新型钛-铜基复合基体阳极的制备及性能研究

引入铜金属作为基体组元来替代传统钛电极单一钛基体,借助扫描电镜及能谱仪研究Ti-Cu复合基的界面形貌及界面处元素分布,通过分析电极的线性扫描伏安(LSV)曲线,对比研究其涂层电极与传统钛涂层电极的电化学性能差异.研究表明:利用真空热压扩散烧结法可制备界面冶金式结合的Ti-Cu复合基材料,其界面的扩散反应和变化形式为:Cu+2Ti→Cu Ti2,3Cu Ti2+5Cu→2Cu4Ti3,Cu Ti2+Cu4Ti3→5Cu Ti,Cu4Ti3+8Cu→3Cu4Ti,Ti-Cu复合基涂层电极与传统钛涂层电极相比,其析氯电位负移40~90 m V,电极电催化活性提高.     

碳纤维布电镀铜工艺的研究

研究了碳纤维布表面铜金属化工艺.碳纤维布进行除油、清洗、敏化及活化预处理后,在以甲醛为还原剂的化学沉铜溶液中化学镀铜60 min,在此基础上进行酸性电沉积铜.研究了不同电镀电流以及不同电镀时间对碳纤维布铜金属化表面形貌和导电性能的影响.研究发现,碳纤维布表面能形成覆盖性良好且连续的电镀铜沉积层,其导电性能随着电镀电流的...     

硫脲对Ni-P镀层腐蚀行为的影响

在镀液中添加硫脲,分析了硫脲对Ni-P镀层沉积速度、表面形貌、孔隙率等的影响,并通过极化曲线和交流阻抗测试了硫脲对Ni-P镀层腐蚀性的影响。结果表明,当镀液中添加1 mg/L硫脲时,镀层的沉积速率加快,腐蚀速率增大。这主要是因为镀液添加硫脲后,镀层的孔隙率加大,促进了腐蚀介质渗入到基体表面,增加了腐蚀微电池的数量,形成了大阴极(镀层)-小阳极（基体）腐蚀微电池,使自腐蚀电流密度增大,电荷转移电阻减小。当镀液中添加硫脲质量浓度大于3 mg/L时,镀液被毒化,无法施镀。     

Fabrication of W@Cu composite powders by direct electroless plating using a dripping method

A direct electroless copper (Cu) coating on tungsten powders method requiring no surface treatment or stabilizing agent and using glyoxylic acid (C₂H₂O₃) as a reducing agent was reported. The effects of copper sulfate concentration and the pH of the plating solution on the properties of the prepared W@Cu composite powders were assessed. The content of Cu in the composite powders was controlled by adjusting the concentration of copper sulfate in the electroless plating solution. A uniform, dense, and consistent Cu coating was obtained under the established optimum conditions (flow rate of C₂H₂O₃ = 5.01 mL/min, solution pH = 12.25 and reaction temperature 45.35 °C) by using central composite design method. In addition, the crystalline Cu coating was evenly dispersed within the W@Cu composite powders and Cu element in the coating existed as Cu0. The formation mechanism for the W@Cu composite powders by electroless plating in the absence of surface treatment and stabilizing agent was also proposed.     

Growth behavior of electroless copper on silicon substrate

The growth behavior containing deposit morphology, growth rate, activation energy, and growth mechanism of copper on silicon substrate, especially at the initial stage, in the electroless plating process was studied. Copper was deposited on the surface of the silicon substrate in an electloless plating bath containing formalin （CH2O 37vol%） as a reducing agent at a pH value of 12.5 and a temperature of 50-75℃. The copper deposit was characterized using a field emission scanning electron microscope and transmission electron microscope. The results showed that after the activation process, nanoscale Pd particles were distributed evenly on the surface of the silicon; in the deposition process, copper first nucleated at locations not only near the Pd particles but also between the Pd particles; the growth rate of electroless Cu ranged from 0.517 nm/s at 50℃ to 1.929 nm/s at 75℃. The activation energy of electroless Cu on Si was 52.97 kJ/mol.     

Preparation of copper-coated fine molybdenum powders with electroless technique

The molybdenum powders with average particle size of 3 μm were coated with copper by electroless plating. The influence of pretreatment,solution composition and plating conditions on electroless copper plating was studied. The copper-coated molybdenum powders were examined by SEM and XRD. Results indicate that a series of optimization methods is used to add activated sites before electroless copper plating. Taking TEA and EDTA as chief and assistant complex agents respectively,2,2’-bipyridyl and PEG as double stabilizers,the Mo powders are coated with copper successfully with little Cu2O contained,at the same time,Mo-Cu composite powders with copper content of 15-85 wt% can be obtained. The optimal values of pH,temperature and HCHO concentration are 12-13,60-65 ℃ and 22-26 mL/L,respectively.     

PCB金手指表面变色研究

对印制电路板(PCB)金手指表面变色进行研究,通过对铜原子扩散的分析,解释了PCB金手指表面变色的原因,即铜原子扩散到PCB金手指表面而被氧化;另外,通过分析铜原子在PCB金手指表面的扩散的内在驱动力,并利用菲克定律结合实际条件得出铜在PCB金手指表面的扩散流量和浓度分布表达式,为在实际运用中防止铜原子在PCB金手指表面的扩散提供了理论依据。     

Kinetics of electroless Ni-Cu-P deposits on silicon in a basic hypophosphite-type bath

Eleetroless Ni-Cu-P deposits were deposited on the Si substrate in a basic hypophosphite-type plating bath.The effects ofpH value and the metal source composition, Ni and Cu, in the plating bath on the kinetics of the Ni-Cu-P deposition were studied.The electroless Ni-Cu-P deposits were characterized by a scanning electron microscope, a transmission electron microscope, an en-ergy dispersive X-ray spectroscope, and an X-ray diffractometer.The results showed that the pH value of the plating bath had no ob- vious effect on the morphology and composition of electroless Ni-Cu-P deposits.However, the composition of the metal source, Ni and Cu, in the plating bath had great effect on the kinetics of electroless Ni-Cu-P deposition.     

基于信号完整性的高速PCB优化设计与研究

印制电路板（Printed Circuit Board,PCB）设计者因缺少PCB制造经验而难以系统、全面和创造性地考虑高速电路的信号完整性问题,本文运用信号完整性相关理论知识全面分析和解决高速PCB设计过程中遇到的问题.以高速PCB的设计和制造为例,利用信号完整性分析方法将地层铜桥、差分线和导通孔设计与高速电路的特征和实际制造工艺相结合,创造性地把外层差分微带线通过盲孔转移到内层带状线,找到优化设计的解决方案.实例显示,把信号完整性分析与高速PCB可制造性相结合,能够有效地解决高速PCB的信号失真问题,一定程度上优化了高速电路的设计及缩短了产品的开发周期.     

铜浸镀锡层形成过程分析

以硫脲作为电位调整剂,以甲烷磺酸锡为主盐的酸性溶液作为镀液,采用浸镀法在铜基材上制备了锡镀层。采用场发射扫描电子显微术（FESEM）和X射线衍射（XRD）表征锡镀层的组织结构,根据数码相机微距照片进行宏观分析。研究表明,该镀液体系浸镀锡可以获得光滑而致密的浸锡层,无枝晶形成。该镀层主要相结构为体心四方的白锡。镀层的形成可分为锡晶粒的剧烈瞬间形核、平面层状生长和镀层致密化排列3个阶段。     

Research on Surface Modification of 96 Al2O3 by Ni Ion Implantation

A matrix of 96 Al2O3 ceramics was implanted with Ni ion of different dosages and energies using a MEVVA implanter. Then metallic structures of copper were made on the implanted ceramics, by using selective electroless copper plating. In addition, the characteristics and microstructure of the implanted layer were studied by using the SEM, RBS and XPS. The results show that： 1） the implanted Ni exits as Ni^2, Ni^2＋, and Ni^3＋ in the surface of Al2O3 and metal Ni particles precipitate on ceramics during implantation; 2） the concentration of Ni submits to the Gauss distribution along the direction of implantation on the surface of Al2O3 and high Ni concentration on the surface can be obtained if the Ni is implanted with low energy and a high dosage and 3） Ni ion implantation can activate the surface of Al2O3 and induce electroless copper plating on the ceramics.     

比色法测量化学镀镍液中Ni~（2＋）浓度的A－C数学模型

通过数学分析的方法建立起化学镀镍液的Ａ－Ｃ数学模型。本模型基于朗伯－比尔定律，成功地扣除了副产物对测量的干扰，使直接比色法适用于化学镀镍过程中Ｎｉ２＋浓度的测定。