二维材料光电探测器的研究进展(续)

<正>4基于二维材料异质结构的光电探测器石墨烯、过渡金属硫化物、黑磷、二维钙钛矿等二维材料已经展现出了一系列独特的光电性质,因此在异质结构中通过将不同的二维材料进行组装,将这些特性集成在一个器件中,从而制造出性能优越的多功能光电系统[97]。本节介绍了基于4种二维材料间异质的光电探测器,同时还介绍了与金属纳米颗粒结合、具有表面等离激元型的光电探测器以及与其他材料异质的光电探测器。4. 1二维材料异质结构光电探测器     

二维半导体红外光电探测器研究进展（特邀）

红外探测在生物医疗、智慧城市、宇宙探索等前沿领域中有着重要的作用。近年来,以二维材料为代表的新型纳尺度半导体并以此形成的具有颠覆性意义的光电探测技术在探测灵敏度、极低暗电流、高工作温度等指标超越了传统薄膜器件的理论极限,是新一代红外光电探测技术有力竞争者之一。文中以局域场调控实现室温高性能光电探测为出发点,介绍了铁电局域场、层间内建电场、面内内建电场调控二维材料光电探测机理与器件实现方法;进一步,针对二维材料其尺寸效应引起的光利用率低或量子效率低的问题,提出了单边异质结和表面等离子激元增强结构的光电性能增强方法;最后列举了二维半导体材料在红外探测器领域的应用探索,展现了新型二维半导体红外探测器的应用潜力与前景,为新一代红外探测器技术提供了新方法和新思路。     

高增益红外单光子探测技术研究进展（特邀）

超灵敏单光子探测是光量子信息和量子调控领域发展的关键技术,实现高效率、超灵敏、低功耗以及低成本的单光子探测具有重要的科学意义和应用价值。与可见光波段的Si基单光子探测器相比,红外响应单光子探测器目前在成本和性能方面都存在较大差距,探索基于新材料和新机制的红外单光子探测技术是光电探测领域发展的迫切需求。近年来,低维材料由于其独特的物化性质,为研制高增益、室温工作和宽波段响应的探测器提供了新的可能,高性能低维材料光电探测技术也成为了当前红外探测领域的研究热点。文中首先回顾了传统雪崩类半导体红外光电探测器的基本原理,在此基础上,介绍了基于新型低维材料的雪崩机制光电探测技术的最新进展,之后讨论了光诱导栅压效应型光电探测器件的新型光增益放大机制,并描述了在该工作机制下相关低维材料红外探测器的基本结构和性能表现。最后展望了高增益红外单光子探测技术的未来发展方向和面临的挑战。     

铁电局域场增强低维材料光电探测器研究进展（特邀）

光电探测器在通讯、环境、健康和国防等日常生活及国家安全等领域中应用广泛。随着时代的发展,对光电探测器在灵敏度、响应速度及波长范围等方面的性能要求与日俱增。低维材料独特的电学及光电特性使其在光电子器件领域具有重要的应用前景。为了充分利用低维材料的优势,克服其暗电流大、吸收率低的不足,研究人员提出将铁电材料与低维材料结合,利用铁电材料的剩余极化作用形成强局域场调控载流子浓度以提高低维材料的光电探测能力。文中总结了近年来铁电局域场增强低维材料光电探测器的研究成果,介绍了铁电材料对一维纳米线、二维材料以及低维结型器件的调控和性能提升方面的相关研究。最后,对铁电局域场增强低维材料光电探测器的发展趋势进行了简要的总结和展望。     

二维半导体光电性质与器件研究进展简述

二维半导体材料,如过渡金属硫族化合物,以其在光电器件方面展现出的独特性能与巨大潜力,成为后摩尔时代有极大发展前景的新半导体材料.二维材料具有独特的光电性质,如直接带隙的电子结构,谷自旋电子学特性,强激子效应等,而利用以上性质,此类材料可用于光探测器、场效应晶体管、高效微纳传感器、光电子电路等微纳光电器件中.因此,以过渡金属硫族化合物为代表的二维半导体材料无论在基础科学与未来应用方面,都是重要的备选材料.     

基于二维半导体材料光电器件的研究进展

近年来,二维半导体材料因其独特的晶体结构和优良的电子、光电特性吸引了众多科研人员的关注。利用这些材料作为有源沟道,制备出了许多新颖的器件结构,性能较传统器件有很大的提升。在各种器件应用中,基于二维材料的光电探测器由于能够实现红外及太赫兹波段的光探测,得到了最为广泛的研究。综述了近年来二维材料在光电器件领域的应用,介绍了光电探测器的主要参数,从电极制备、异质结构筑、量子点和分子掺杂、表面等离激元耦合以及界面屏蔽5方面介绍了目前在二维材料中调控光电性能的方法,对已有方法进行了总结,并且对未来的发展进行了讨论。     

半导体纳米线红外探测研究进展（特邀）

近年来,红外探测器由于其在军民领域广阔的应用前景已经受到了越来越多的关注。为了进一步实现室温宽谱段、高灵敏度、快速响应以及低功耗的红外探测器,低维半导体作为极具潜力的新型沟道材料得到了广泛的研究。其中,纳米线有着独特的电学与光电特性,当被应用到红外光电探测器中时,展现出了巨大的优势,例如尺寸小、功耗低、光吸收效率高、表面态丰富、易于光电子分离与收集以及与传统硅基工艺兼容等等。当前,对于纳米线红外探测器的研究一直在进行中并不断取得突破。文中主要概述了纳米线在红外光电探测领域的最新研究进展,介绍了半导体纳米线的基本特性、材料选择和制备方法,展示了多种二元与三元化合物半导体中已实现红外探测的纳米线材料及其当前研究达到的探测水平,并且分类总结了多种进一步提高光电探测性能的方法,包括异质结合、外场调控、器件集成等,随后针对不同构型纳米线红外探测器的优缺点,进行了简要的对比与说明,最后基于该领域仍然面临的挑战对其未来的发展方向进行了展望,并为其技术发展路线提出了初步的建议。     

电场及力场增强二维材料光电探测器的研究进展北大核心CSCD

二维材料光电探测器作为新型光电探测器,具有带隙可调、易于制备柔性器件等诸多优点。进一步丰富了光电探测器的应用前景。与此同时,二维材料光电探测器也需要一定程度的优化,例如解决二硫化钼难以实现双极性调控的问题。本文着重介绍科研人员通过利用离子导体,铁电材料,局域栅等电场方式以及施加应力的力场方式对二维材料光电探测器进行增强。从而解决二维材材制备的探测器存在的一些问题,并分析现有研究的不足之处,并对其未来发展进行展望。为相关研究人员提供一定程度的参考。     

基于二维材料的光通信波段光电探测器

光电探测器是光通信、光学成像系统的核心组件。光通信波段纳米光电探测器是当前光电信息技术领域的重要研究对象。目前，基于铟镓砷和汞镉碲等传统化合物半导体材料的光通信波段光电探测器面临着制备流程复杂、成本高昂、工作温度低、集成困难等问题。新型二维材料具有独特的结构和光电性质，是制备下一代低功耗、小型化光电探测器的重要材料。主要概述了二维材料光电探测器在光通信波段的研究进展，包括二维材料的独特物理化学性质、光电探测器的基本工作原理和参数指标等，重点论述了基于二维材料及其异质结的光电探测器的研究进展，最后总结了该领域面临的挑战以及发展前景。     

二维层状材料异质结光电探测器研究进展（特邀）

自石墨烯时代以来,具有独特物理、化学和光电特性的二维层状材料(Two-Dimensional Layered Materials,2DLMs)得到了国内外科研人员的广泛关注。2DLMs因其种类的多样化与带隙的层数依赖性,光谱响应范围覆盖了紫外到红外辐射的极宽波段,具有应用于新一代光电探测器件的潜力。此外,2DLMs不受晶格匹配的限制,能以范德瓦尔斯力(Van der Waals,vdWs)与其他维度材料如体材料、纳米线和量子点等结合,制备得到性能独特且优异的复合结构器件。文中概述了几种应用在光电探测器领域的新型2DLMs异质结光电探测器的研究进展,主要包括基于二硒化钨(WSe₂)、黑砷磷(AsP)、三硫化铌(NbS₃)、二硒化钯(PbSe₂)等异质结光电探测器,这些异质结光电探测器在异质结器件结构设计与新型二维半导体工艺技术应用方面做出了创新,在器件增益、结整流比、响应速度与波长探测范围等多个重要器件性能方面获得了突破性的研究成果。同时,文中还简要分析了这类器件研究当前所面临的挑战,并对其未来的发展方向进行了展望。     

Progress,Challenges, and Opportunities for 2D Material Based Photodetectors

2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure‐of‐merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization‐sensitive detection are pointed out on the basis of the state‐of‐the‐art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high‐performance photodetectors is given to provide a guideline for the future development of this fast‐developing field.     

Van der Waals Integration Based on Two-Dimensional Materials for High-Performance Infrared Photodetectors

Infrared photodetectors have been widely applied in various fields, including thermal imaging, biomedical imaging, and communication. Van der Waals (vdW) integration based on 2D materials provides a new solution for high-performance infrared photodetectors due to the versatile device configurations and excellent photoelectric properties. In recent years, great progress has been made in infrared photodetectors based on vdW integration. In this review, recent progress in vdW integration-based infrared photodetectors is presented. First, the working mechanisms and advantages of photodetectors with different structures and band alignments are presented. Then, the recent progress of vdW integration-based infrared photodetectors is reviewed, focusing on 2D/nD (n  =  0, 1, 2, 3) vdW integration, and the band engineering as well as the performance of the photodetectors are discussed in detail. Finally, a summary is delivered, and the challenges and future directions of vdW integration-based infrared photodetectors are provided.     

Recent Advances in 2D MXenes for Photodetection

A new class of 2D transition metal carbides, carbonitrides and nitrides, termed MXenes, has emerged as a new candidate for many applications in electronics, optoelectronics, and energy storage. Since their first discovery in 2011, MXenes have gathered increasingly more interest owing to their unique physical, chemical, and mechanical properties that can be tuned by different surface terminations and transition metals. In particular, the intriguing optical and electrical properties, including transparency, saturable absorption, and high conductivity, grant MXenes various roles in photodetectors, such as transparent electrodes, Schottky contacts, photoabsorbers, and plasmonic materials. Given the solution‐processability, MXenes also hold great potential for large‐scale synthesis, and thus are favored for a number of electronic and photonic device applications. In this review, recent advances in photodetectors based on 2D MXenes are summarized. Despite the fact that such applications have only recently been explored compared with other 2D materials, MXenes have shown promise in low‐cost and high‐performance photodetection.     

Photodetectors based on two dimensional materials

Two-dimensional (2D) materials with unique properties have received a great deal of attention in recent years. This family of materials has rapidly established themselves as intriguing building blocks for versatile nanoelectronic devices that offer promising potential for use in next generation optoelectronics, such as photodetectors. Furthermore, their optoelectronic performance can be adjusted by varying the number of layers. They have demonstrated excellent light absorption, enabling ultrafast and ultrasensitive detection of light in photodetectors, especially in their single-layer structure. Moreover, due to their atomic thickness, outstanding mechanical flexibility, and large breaking strength, these materials have been of great interest for use in flexible devices and strain engineering. Toward that end, several kinds of photodetectors based on 2D materials have been reported. Here, we present a review of the state-of-the-art in photodetectors based on graphene and other 2D materials, such as the graphene, transition metal dichalcogenides, and so on.     

黑硅光电探测材料与器件研究进展

黑硅作为一种新型光电材料,在光伏太阳能电池、光电探测器、CMOS图像传感器等领域被广泛研究,其中黑硅的光电探测技术备受关注,近些年来也取得了重要的研究进展。本文首先简单介绍了黑硅材料的结构,然后讨论了基于飞秒激光刻蚀法、湿法腐蚀、反应离子刻蚀法等方法制备的黑硅材料的性质。其次概述了基于以上方法制备的不同黑硅光电探测器的结构及性能,并讨论了黑硅器件在不同领域的应用。最后对黑硅光电探测技术进行了分析与展望,探讨了黑硅材料及器件未来的发展方向。     

Perovskite‐Based Phototransistors and Hybrid Photodetectors

In the past several years, organic–inorganic hybrid perovskites and all inorganic perovskites have attracted enormous research interest in a variety of optoelectronic applications including solar cells, light‐emitting diodes, semiconductor lasers, and photodetectors for their plenty of appealing electrical and optoelectrical properties. Benefiting from the inherent amplification function of transistors and the pronounced photogating effect, perovskite‐based phototransistors and hybrid photodetectors can provide very high photoresponsivity and gain, rendering them highly promising for some specific applications especially ultrasensitive light detection. A review on the recent progress of phototransistors and hybrid photodetectors using perovskites as light‐sensitive materials is presented. The efforts and development in 3D and 2D perovskite‐based phototransistors, and perovskite/functional material (e.g., graphene, 2D semiconductors, organic semiconductors, and other semiconductors) heterojunction‐based hybrid photodetectors are introduced and discussed systematically. Some processing techniques for optimizing device performance are also addressed. In the final section, a conclusion of the research achievements is presented and possible challenges as well as outlook are provided to guide future activity in this research field.     

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Van der Waals (vdW) materials of transition metal dichalcogenides (TMD) family with semiconducting properties are currently at the forefront of research in the field of optoelectronics. The ability to couple them with one another at atomic interface precision in a synergistic way opens up unprecedented opportunities to design photodetectors of broad spectral range with excellent figures of merits not accessible to discrete materials. Recent years have seen a surge of interest in group VII TMD materials (ReS₂ and ReSe₂) due to their strong optical response from bulk to monolayer and good ambient stability. Their band gap energies spanning over visible and near-infrared ranges and the strong linear polarization sensitivity stemming from the distorted octahedral symmetry, are ideally suited for polarization-sensitive photodetectors. This review aims at providing a comprehensive understanding of the fundamental properties, optical identification of various structural features, long-debated question of band gap nature and interlayer coupling, and recent advances in the development of photodetectors based on ReS₂, ReSe₂, and their vdW heterostructures with other layered materials of practical importance. We critically review various conceptual device designs implemented based on band engineering, emphasize on the merits of these photodetectors and their potential applications, and provide an outlook for future prospects.     

Surface-enhanced Raman spectroscopy chips based on two-dimensional materials beyond graphene

Surface-enhanced Raman spectroscopy (SERS) based on two-dimensional (2D) materials has attracted great attention over the past decade.Compared with metallic materials,which enhance Raman signals via the surface plasmon effect,2D materials integrated on silicon substrates are ideal for use in the fabrication of plasmon-free SERS chips,with the advantages of outstanding fluorescence quenching capability,excellent biomolecular compatibility,tunable Fermi levels,and potentially low-cost material preparation.Moreover,recent studies have shown that the limits of detection of 2D-material-based SERS may be comparable with those of metallic substrates,which has aroused significant research interest.In this review,we comprehensively summarize the advances in SERS chips based on 2D materials.As several excellent reviews of graphene-enhanced Raman spectroscopy have been published in the past decade,here,we focus only on 2D materials beyond graphene,i.e.,transition metal dichalcogenides,black phosphorus,hexagonal boron nitride,2D titanium carbide or nitride,and their heterostructures.We hope that this paper can serve as a useful reference for researchers specializing in 2D materials,spectroscopy,and diverse applications related to chemical and biological sensing.