大面阵碲镉汞长波红外焦平面器件刻蚀工艺非均匀性研究

作为探测器组件的性能指标之一,响应率非均匀性对其实际应用具有重要影响,尤其是在低背景空间应用领域。大面阵探测器芯片的接触孔尺寸不均匀是导致器件响应不均匀的因素之一。对1280×1024大面阵长波红外探测器芯片的接触孔刻蚀工艺进行了研究,并提出了优化改进措施。结果表明,本文方法可提高刻蚀工艺的均匀性,进而降低探测器组件响应率的非均匀性。     

大面阵碲镉汞芯片的热应力分析与优化

随着红外焦平面探测器面阵规模的不断扩大,大面阵碲镉汞芯片的热应力进一步恶化,受温度冲击后更容易产生损伤,进而直接影响探测器的使用,甚至导致探测器失效.这已成为大面阵探测器生产工艺亟需解决的问题.借助仿真手段研究了大面阵碲镉汞芯片的低温损伤原因,并结合小面阵探测器进行了对比分析.结果 表明,铟柱与碲镉汞接触边缘部位因应力...     

128元长波碲镉汞焦平面器件

本文概要叙述了１２８元长波碲镉汞焦平面器件的原理及研制工艺；ＣＭＯＳ互连后测试结果：峰值Ｄλ＾＊＝３．４×１０＾１０ｃｍＨｚ＾１／２Ｗ＾－１，Ｒｖλ＝１．２×１０＾８Ｖ／Ｗ，利用１２８元长波碲镉汞焦平面器件研制成功的热像仪成像情况。     

碲镉汞红外焦平面器件热失配应力研究

采用有限元分析方法研究了碲镉汞红外焦平面器件在低温下由于不同热膨胀系数引起的热失配应力,提出了两种焦平面器件结构,可以有效地降低热应力,并应用于实际器件的制备,明显提高了碲镉汞焦平面器件的可靠性.     

碲镉汞红外焦平面器件技术进展

近十年碲镉汞第二代红外焦平面探测器应用呈现爆发式增长,也是第三代焦平面技术快速发展的十年。文中对近十年来碲镉汞红外焦平面探测器技术的发展进行了简单的回顾,并结合碲镉汞红外焦平面探测器的应用,对在碲镉汞红外焦平面探测器技术方面的研究工作和工程应用进行了总结,最后,对未来碲镉汞红外焦平面探测器技术的发展进行了展望。     

超大面阵碲镉汞探测器低应力设计及有限元分析

随着碲镉汞材料和器件技术的不断发展,满足大视场、超高分辨率应用需求的超大阵列规模的红外探测器逐步投入工程应用,超大面阵探测器芯片的低温可靠性成为封装技术的重点研究内容。以某超大面阵碲镉汞混成芯片为研究对象,采用有限元仿真分析法研究了冷头材料体系、冷台外径、冷台的结构形式等因素对混成芯片低温应力和芯片光敏面低温变形的影响规律,最终优化设计出一套可满足超大面阵芯片低温可靠性要求的冷头结构和材料体系。仿真结果显示,该冷头体系硅电路低温下最大应力约为70 MPa,碲镉汞光敏区在低温下的变形约为30■m。仿真结果能满足工程应用可靠性要求的经验仿真阈值,有效改进了超大面阵红外探测器的高可靠小型化封装技术。     

制冷型大面阵红外探测器研制进展

作为未来红外探测器的主流发展方向之一,大面阵红外探测器近年来的发展非常迅速,主要用于天体物理学、地球科学和行星科学等领域,并且是未来地球天气与气候描述、空气污染检测方面的一种主要工具。随着面阵规格和材料尺寸的增加,器件的制作难度也越来越大。重点介绍了目前国际上最常见的两种制冷型红外探测器——HgCdTe和InSb红外探测器。结合国内外的一些文献,总结了这两种红外探测器的大面阵技术的发展状况,并重点介绍了当前全球行业领先的几家红外探测器厂商的相关产品及技术水平。最后指出了大面阵红外探测器研制目前存在的主要问题。     

长波红外2048元线列碲镉汞焦平面器件

介绍了长波红外2048元线列碲镉汞焦平面器件的制备技术和达到的性能参数.探测器采用离子注入平面pn结制备光敏元,通过间接倒焊技术和读出电路互联,采用8个256元焦平面模块拼接2048元线列焦平面器件.光敏元的响应截止波长达到9.9μm,相应的RoA达到10Ωcm2,平均峰值探测率达到9.3×1010cmHz1/2 W-1,响应不均匀性为8%,有效光敏元率大干99.5%.     

碲镉汞多色红外焦平面探测芯片

文章从芯片结构、晶格匹配和PN结性能三个方面对碲镉汞多色焦平面探测芯片技术进行了探讨,结果显示在三种主要的双色探测芯片结构中,单电极和环孔工艺的双色芯片技术相对比较成熟,高难度的刻蚀技术以及所引起的表面反型是制约双电极或多电极多色探测芯片技术发展的主要因素,而环孔技术在发展多色探测芯片方面则有其独到之处,随着探测波段的增加,其工艺难度并没有质的变化。多色探测芯片不同外延层之间的晶格失配以及和Si基衬底之间热失配也是必须加以考虑和解决的一个问题,在现阶段, Si基直接外延、大面积碲锌镉材料和ZnCdTe /Si复合衬底技术并举仍将是明智的选择。在PN结方面,二代焦平面的成结技术在多色器件的宽带结上尚未能够实现,刻蚀反型和深台面侧面钝化的困难依然存在,这些均制约着器件性能的提高,另外,多色芯片的结构和表面加工工艺也影响着探测芯片的光通量利用率和量子效率。     

碲镉汞焦平面器件背面减薄技术

采用机械抛光和机械化学抛光的方法进行碲镉汞焦平面器件的碲锌镉衬底背面减薄,最后利用专用腐蚀液腐蚀的方法将碲锌镉衬底全部去除,碲镉汞完全露出;器件测试结果表明减薄后的MW1280×1024器件经受高低温循环冲击的可靠性显著提高。     

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

This paper reviews the current status of the growth of fully doped HgCdTe (MCT) devices by metalorganic vapor phase epitaxy (MOVPE). The current reactor system has been developed to produce 3-inch diameter epitaxial layers compatible with slice-scale processing. The new reactor system has achieved routine epitaxial growth of MCT with good morphology onto both gallium arsenide (GaAs) and GaAs on silicon (Si) wafers that were oriented (2–8°) off (100) orientation. The density of surface defects (so-called “hillocks”), typical of MOVPE growth on such orientation substrates, has been reduced to <5 cm⁻² at a sufficient yield to make the production of low cluster defect 2D arrays possible. Alternative growth experiments onto cadmium telluride (CdTe) on Si substrates with (211)B orientation have also been performed to investigate their usefulness for infrared focal plane array (IRFPA) applications. Si substrates give better thermal expansion match to the read out Si circuits (ROIC). The horizontal reactor cell design has a graphite susceptor with a rotating platen capable of using substrates up to 4-inch diameter. Work, however, has concentrated on 3-inch diameter GaAs and GaAs on Si wafers substrates in the reactor, and these reproducibly demonstrated good compositional and thickness uniformity. Cut-off wavelength and thickness uniformity maps showed that there was sufficient uniformity to produce twelve sites of large format 2D arrays (640×512 diodes on 24-μm pitch) per slice. Minority carrier lifetimes in heterostructures is an important parameter and some factors affecting this are discussed, with special emphasis on As-doped material grown under various growth conditions in an attempt to reduce Shockley-Read (S-R) trap densities. New data are presented on trap densities and theoretical fitting of lifetimes in MOVPE material. Fully doped heterostructures have been grown to investigate the device performance in the 3–5 μm medium-wave IR (MWIR) band and 8–12 μm long-wave IR (LWIR). These layers have been fabricated into mesa arrays and then indium-bumped onto Si multiplexers. A summary of the 80-K device results shows that state-of-the-art device performance has been demonstrated in MOVPE-grown device structures.     

Process simulation for HgCdTe infrared focal plane array flexible manufacturing

The strategy and status of a process simulator for the flexible manufacture of HgCdTe infrared focal plane arrays is described. It has capabilities to simulate Hg vacancy and interstitial effects and cation impurity diffusion, for various boundary conditions in one dimension. Numerical complexity of these problems stems from the necessity of solving diffusion equations for each defect that are coupled to each other via nonlinear interaction terms. The simulator has already led to the prediction of heretofore unexplained experimental data. Current extensions of the one-dimensional simulator planned over the next few years include the addition of Te antisites, antisite-Hg vacancy pairs, and In-Hg vacancy pairs, ion implantation, and various energetic processes (such as ion milling). The sequential effect of various processes will be possible with the input to the simulator looking much like a process run sheet.     

HgCdTe红外焦平面阵列像素内灵敏度函数仿真

对于<2的欠采样成像红外搜索和追踪系统,点目标能量集中在单像素内。由于焦平面阵列像素内灵敏度（IPS：Intra-Pixel Sensitivity）存在空间非均匀性,会降低目标的能量和质心测量精度。传统的光点扫描实验测试和数值仿真方法可有效表征和分析IPS,但系统和模型复杂度高、效率低,且实验测试无法分析IPS空间非均匀性与探测器参数的关系。针对上述问题,提出基于蒙特卡洛方法的HgCdTe红外焦平面阵列IPS仿真模型,分析了IPS空间非均匀性的影响因素。结果表明,减小像素中心距或增大吸收层厚度,IPS的空间非均匀性减小;随波长增大,IPS的空间非均匀性增大。该仿真和分析对高能量集中点目标测量精度的提升具有重要参考意义。     

Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays

Direct epitaxial growth of high-quality 100lCdZnTe on 3 inch diameter vicinal {100}Si substrates has been achieved using molecular beam epitaxy (MBE); a ZnTe initial layer was used to maintain the {100} Si substrate orientation. The properties of these substrates and associated HgCdTe layers grown by liquid phase epitaxy (LPE) and subsequently processed long wavelength infrared (LWIR) detectors were compared directly with our related efforts using CdZnTe/ GaAs/Si substrates grown by metalorganic chemical vapor deposition (MOCVD). The MBE-grown CdZnTe layers are highly specular and have both excellent thickness and compositional uniformity. The x-ray full-width at half-maximum (FWHM) of the MBE-grown CdZnTe/Si increases with composition, which is a characteristic of CdZnTe grown by vapor phase epitaxy, and is essentially equivalent to our results obtained on CdZnTe/GaAs/Si. As we have previously observed, the x-ray FWHM of LPE-grown HgCdTe decreases, particularly for CdZnTe compositions near the lattice matching condition to HgCdTe; so far the best value we have achieved is 54 arc-s. Using these MBE-grown substrates, we have fabricated the first high-performance LWIR HgCdTe detectors and 256 x 256 arrays using substrates consisting of CdZnTe grown directly on Si without the use of an intermediate GaAs buffer layer. We find first that there is no significant difference between arrays fabricated on either CdZnTe/Si or CdZnTe/GaAs/Si and second that the results on these Si-based substrates are comparable with results on bulk CdZnTe substrates at 78K. Further improvements in detector performance on Si-based substrates require a decrease in the dislocation density.     

甚长波碲镉汞红外焦平面探测器

采用砷离子注入p-on-n平面结技术制备了77 K工作温度下截止波长分别为13.23 μm和14.79 μm、像元中心距为25 μm的甚长波640×512探测器,并对其基本性能和暗电流进行了测试和分析。结果表明,对于截止波长为13.23 μm的甚长波640×512（25 μm）,器件量子效率为55%,NETD平均值为21.5 mK,有效像元率为99.81%;对于截止波长为14.79 μm的甚长波640×512（25 μm）,器件量子效率为45%,NETD平均值为34.6 mK,有效像元率为99.28%。这两个甚长波器件在液氮温度下的R₀A分别为19.8 Ω·cm²和1.56 Ω·cm²,达到了“Rule07”经验表达式的预测值,器件噪声主要受散粒噪声限制,显示出了较好的器件性能。     

碲镉汞大面阵红外探测器模块结构应力的有限元分析

借助有限元软件分析了原始探测器模块和加入Kovar平衡层探测器模块的应力分布情况,模拟结果表明,增加Kovar平衡层后,探测器HgCdTe外延层上的热应力有所减小,而探测器芯片表面中心位置处的形变量明显减小.在不改变平衡层材料前提下,当平衡层厚度为0.2 mm、0.5 mm、1 mm、1.5 mm和2 mm时,HgCd...     

MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabrication of high performance, large-area HgCdTe infrared focal-plane arrays on Si substrates. A key element of this heteroepitaxial approach has been development of high quality CdTe buffer layers deposited on Si(112) substrates. We review the solutions developed by several groups to address the difficulties associated with the CdTe/Si(112) heteroepitaxial system, including control of crystallographic orientation and minimization of defects such as twins and threading dislocations. The material quality of HgCdTe/Si and the performance of HgCdTe detector structures grown on CdTe/Si(112) composite substrates is reviewed. Finally, we discuss some of the challenges related to composition uniformity and defect generation encountered with scaling the MBE growth process for HgCdTe to large-area Si substrates.     

碲镉汞APD焦平面技术研究

采用LPE生长的中波碲镉汞材料,通过B离子注入n-on-p平面结技术制备了规模为256×256,像元中心距为30 μm的碲镉汞APD焦平面探测器芯片。在液氮温度下对其增益、暗电流以及过噪因子等性能参数进行了测试分析,结果表明,所制备的碲镉汞APD焦平面芯片在-8.5 V反偏下平均增益达到166.8,增益非均匀性为3.33%;在0~-8.5 V反向偏置下,APD器件增益归一化暗电流为9.0×10^-14~ 1.6×10^-13 A,过噪因子F介于1.0~1.5之间。此外,还对碲镉汞APD焦平面进行了成像演示,并获得了较好的成像效果。     

高工作温度中波红外碲镉汞焦平面研究

该文报道了昆明物理研究所高工作温度中波红外碲镉汞焦平面探测器器件的研究情况。通过优化焦平面器件结构参数,采用As离子注入形成p-on-n平面结器件技术,在液相外延生长的高质量原位In掺杂的碲镉汞薄膜上制备了阵列规格为640×512@15μm的中波红外焦平面探测器。利用变温杜瓦测试了焦平面芯片在不同工作温度下的光谱响应、器件暗电流、噪声等效温差、有效像元率以及盲元分布等,测试结果表明器件具备180K以上工作温度的能力。