Growth and characterization of AP-MOCVD iron doped titanium dioxide thin films

Atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) was used to prepare iron doped titanium dioxide thin films. Thin films, between 40 and 150 nm thick, were deposited on Si, SiO₂ and Al₂O₃ substrates using titanium tetra isopropoxide and ferrocene as metal organic precursors. TiO₂ iron doping was achieved in the range of 1–4 at.%. The film morphology and thickness, polycrystalline texture and doping content were studied using respectively scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The influence of growth temperature, deposition time, substrate type and dopant partial pressure were studied. Electrical characterizations of the films were also performed.     

Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells

Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C₆₀ bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability.     

Influence of chemically p-type doped active organic semiconductor on the film thickness versus performance trend in cyanine/C60 bilayer solar cells

Abstract

Simple bilayer organic solar cells rely on very thin coated films that allow for effective light absorption and charge carrier transport away from the heterojunction at the same time. However, thin films are difficult to coat on rough substrates or over large areas, resulting in adverse shorting and low device fabrication yield. Chemical p-type doping of organic semiconductors can reduce Ohmic losses in thicker transport layers through increased conductivity. By using a Co(III) complex as chemical dopant, we studied doped cyanine dye/C₆₀ bilayer solar cell performance for increasing dye film thickness. For films thicker than 50 nm, doping increased the power conversion efficiency by more than 30%. At the same time, the yield of working cells increased to 80%. We addressed the fate of the doped cyanine dye, and found no influence of doping on solar cell long term stability.     

Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films

Raman scattering characteristics of intrinsic and doped hydrogenated nanocrystalline silicon films which prepared by a plasma-enhanced chemical vapor deposition system are investigated. Results indicate that Raman spectra depend intensively on microstructure and impurity in the films. Taking into account phonon confinement effect and tensile strain effect in Si nanocrystals, peak redshift of measured transverse optical modes in Raman spectra of intrinsic films can be well interpreted. With respect to Raman scattering from doped samples, besides phonon confinement effect, the peak of experimental transverse optical mode further downshifts with heightening doping level, which can be primarily assigned to impurity effect from doping. In addition, the increase in relative integral intensity ratio of transverse acoustic branch to transverse optical mode and that of longitudinal acoustic branch to transverse optical mode with decreasing mean dimension of nanocrystals and heightening doping ratio, respectively, can be ascribed to disorder. Furthermore, at the same doping level, incorporation of boron can induce higher disorder than incorporation of phosphorus in nc-Si:H films.     

Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition

Microcrystalline silicon (μc-Si) doped films were prepared by hot-wire chemical vapor deposition (HWCVD) to investigate the doping efficiency. The incorporation probability of different dopant atoms into the solid-phase is always increasing with the doping gas concentrations, but very different for the doping gases used: trimethylboron (TMB), boron trifluoride (BF₃) and phosphine (PH₃). At the same doping gas concentration in the process gas the incorporation of phosphorus atoms into the solid μc-Si phase is much larger than that of boron atoms with respect to the dissociation probability of the doping gases. The electron and hole concentrations, estimated from Hall measurements, are directly related to the solid phase concentration of the doping atoms and independent of the type of dopant and the doping gas used. This results in an equal doping efficiency of about 20 % for the incorporated B and P atoms in doped HWCVD μc-Si films. For the dopant atom concentration regime investigated the doping efficiency of B atoms is in good agreement with corresponding PECVD doping efficiencies however, the doping efficiency of P atoms is considerably lower for our n-doped films.     

Growth of CdS nanoparticles in Y- and Z-type Langmuir–Blodgett thin film using 1,3-bis-(p-iminobenzoic acid)indane

Cadmium sulphide (CdS) nanoparticles were formed in 1,3-bis-(p-iminobenzoic acid)indane by exposing Cd²⁺ doped Y- and Z-type multilayered Langmuir–Blodgett (LB) films to H₂S gas. The growth of CdS nanoparticles were monitored by UV–visible spectroscopy measurements. It was observed that CdS nanoparticles in both Y- and Z-type LB films cause a blue-shift in absorption spectra. The surface morphology of LB films were characterized with atomic force microscopy DC electrical measurements were carried out for these LB films grown in a metal/LB film/metal sandwich structures with and without CdS nanoparticles. By analyzing I–V curves and assuming Schottky conduction mechanism the barrier height was found to be as 1.25 and 1.17?eV for Y-type unexposed and exposed samples; 1.18 and 1.25?eV for Z-type unexposed and exposed samples, respectively.     

光交联型成像材料及其印刷基本性能研究

本文研究了一种酸致交联型CTP版材成像体系,利用三嗪类光生酸剂见光产酸引发酸敏树脂（酚醛树脂）交联原理,通过曝光、烤版、显影形成图像,并且研究了其成像条件,并与传统PS版材的图文和非图文接触角进行了比较。用制备的版材上机印刷,得到了图像完整清晰的印刷品。     

一种光敏CTP版材成像体系的研究

研究一种有望应用于计算机直接制版（Computerto Plate,CTP）光敏成像版材配方。先以双酚A和甲醛为原料合成一种交联剂,利用IR和TG进行结构表证;将它和一种线性酚醛树脂配制成涂膜液,掺加三嗪类光生酸剂,通过曝光、烤版、显影研究成像过程,并利用膜厚变化和表面亲和性变化研究成像性能。     

Effects of dye doping on ferroelectricity in vinylidene fluoride and trifluoroethylene copolymers

The effects of dye doping on ferroelectricity in vinylidene fluoride and trifluoroethylene copolymers have been investigated mainly through dielectric and switching measurements. Large dielectric relaxation, which cannot be explained by dipole fluctuations of individual chain molecules around their axes, was observed in the dye-doped copolymer films. With increasing dye content in copolymers, the relaxation times increase, and the dielectric relaxation strength becomes large. However, the switching times and the switching curve are nearly independent of dye content. These results can be explained if we assume that dye is doped into noncrystalline regions but not into crystalline regions, and forms a long and slender phase boundary in which the dye content is high. This revised version was published online in November 2006 with corrections to the Cover Date.     

Effects of vapor annealing on the properties of the ZnO films prepared by spray pyrolysis

Zinc oxide (ZnO) films were deposited on (0 0 0 1) sapphire substrates from a solution containing zinc acetate. The films were deposited in a vertical type hot wall reactor by the pyrolysis of an aerosol produced by an ultrasonic generator. To increase the resistivity of the films, copper doping and annealing in an ambient of water vapor (vapor annealing) were carried out. The resistivity of a 0.5 wt % copper doped ZnO film was around 24 cm. The vapor annealing resulted in a 10⁷-fold increase in the resistivity. After annealing, the crystallinity of the films was improved, as determined by X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM). All the films annealed at 600°C for 2 h exhibited a strong (0 0 2) orientation with a smooth surface The crystallinity, surface morphology, composition and electrical properties of the as-deposited and vapor-annealed films were investigated.     

由专利看柯达公司热交联CTP版的发明及改进过程

对柯达热交联 Ｃ Ｔ Ｐ 版申请的有关专利进行了研究，对其设计思路及具体配方的改进作了介绍。柯达发明的热交联 Ｃ Ｔ Ｐ 涉及一种新型的光敏组成物，其基本组成为（１） 可熔性酚醛树脂，（２） 线型酚醛树脂，（３） 潜在的质子酸，（４） 红外吸收剂。用红外激光直接制版时，红外吸收剂和潜在的质子酸均分解并产生酸，在曝光后的预热处理过程中，酸起催化作用使两种酚醛树脂交联固化，形成不溶于碱性显影液的物质。对其存在的需要预热处理过程的不足以及今后的改进方向作了探讨。     

Structural characterization of boron doped hydrogenated nanocrystalline silicon films

Structural properties of boron doped hydrogenated nanocrystalline silicon films deposited by plasma enhanced chemical vapor deposition method were mainly characterized with Raman and X-ray diffraction methods. The experimental Raman data were fitted better by Fano effect profiles than those by phonon confinement effect line shapes chiefly due to high efficiency doping in grown films. The measured Raman spectra were deconvoluted into three-Gaussian profile components: around the peak positions 520 and 480 cm⁻¹ which contribute from crystalline and amorphous tissues separately, as well as a curve centered at about 500 cm⁻¹, which is attributed to the presence of grain boundaries. The average crystalline grain size and crystalline volume fraction were valued with Raman and X-ray diffraction techniques, respectively, while the error derived from different methods was elucidated. Accordingly, the structural changes including crystallites, grain boundaries and amorphous matrices in doped films with boron doping level were analyzed.     

Template-directed synthesis of silica nanotubes for explosive detection

Fluorescent porous organic-inorganic thin films are of interest of explosive detection because of their vapor phase fluorescence quenching property. In this work, we synthesized fluorescent silica nanotubes using a biomineralization process through self-assembled peptidic nanostructures. We designed and synthesized an amyloid-like peptide self-assembling into nanofibers to be used as a template for silica nanotube formation. The amine groups on the peptide nanofibrous system were used for nucleation of silica nanostructures. Silica nanotubes were used to prepare highly porous surfaces, and they were doped with a fluorescent dye by physical adsorption for explosive sensing. These porous surfaces exhibited fast, sensitive, and highly selective fluorescence quenching against nitro-explosive vapors. The materials developed in this work have vast potential in sensing applications due to enhanced surface area.     

Effect of Low-Temperature Diffusion Annealing on the Properties of PbSnTe〈In〉 Epilayers

A procedure was proposed for low-temperature vapor-phase In doping of Pb_{1 – x} Sn _x Te films grown by molecular-beam epitaxy on BaF₂ substrates. Diffusion annealing was carried out in a hydrogen atmosphere in the presence of a vapor source identical in composition to the film and a dopant source at temperatures which were, in most cases, no higher than the growth temperature (300–460°C). The effect of diffusion annealing on the composition, transport properties, and homogeneity of both undoped and In doped films was examined. The results suggest that indium is transported in the vapor phase in the form of indium tellurides resulting from the reaction between Te vapor and liquid In.     

Evaluation of SOCl2 doping effect on electrical conductivity of thin films of SWNTs and SWNT/PEDOT-PSS composites

Transparent conductive thin films of single-walled carbon nanotubes (SWNTs) and their nanocomposites with an organic conductive polymer, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) with different CNT loadings ranging from 20 to 90 wt% were prepared and doped by exposing them to thionyl chloride (SOCl2) vapors. After exposure to SOCl2 vapor for 1 h, the SWNT film showed about 15-18% increase of electrical conductivity, while on the other hand pristine polymer film showed a decrease of electrical conductivity. The SWNT-polymer composite films showed a drastic increase in conductivity by doping with SOCl2 vapor, most interestingly, the doping effect was much higher for composite films with less CNT weight fraction and it was linearly decreased with increasing CNT loading. For instance, composite film with 10% and 90% CNT loading demonstrated about 65% and 10% increase of electrical conductivity, respectively. The interaction of SOCl2 vapors on SWNTs and composite films is investigated by UV-visible absorption and Raman spectroscopy.     

Effects of doping concentration on the microstructural and optoelectrical properties of boron doped amorphous and nanocrystalline silicon films

Boron doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique at various flow rate of diborane (F_B). As-deposited samples were thermally annealed at the temperature of 800 °C to obtain the doped nanocrystalline silicon (nc-Si) films. The effect of boron concentration on the microstructural, optical and electrical properties of the films was investigated. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the dark conductivity of doped amorphous samples increases monotonously with the increase of doping content. While the dark conductivity of doped nc-Si films is not only determined by the concentration of dopant but also the crystallinity of the films. As increasing the flow rate of diborane, the crystallinity of doped nc-Si films decreases, which causes the decrease of dark conductivity. Finally, the high dark conductivity of 178.68 S cm⁻¹ of the B-doped nc-Si thin films can be obtained.     

硼轻掺杂对a-Si∶H光电导层性能影响的研究

用等离子体增强化学气相沉积法制备了厚为1μm左右的B轻掺杂a-Si∶H光电导层，得到了a-Si∶H的暗电导率与淀积工艺参数和B掺杂比关系的实验曲线，利用该曲线确定了最佳工艺参数和最佳掺杂比。测量了最佳参数下淀积的a-Si∶H薄膜的电学和光学性能及其受掺杂比的影响。结果表明，当B掺杂比增大时，a-Si∶H的暗电导率先减小后增大，并可发生几个数量级的变化。光电导率减小，折射率略有降低，线性吸收系数显著增大，光学带隙减小。测量的数据表明，我们制备的B轻掺杂a-Si∶H光电导层满足投影机用液晶光阀的要求。     

金属掺杂类金刚石膜的研究进展

金属掺杂类金刚石（Diamond—like Carbon,DLC）膜可以优化纯类金刚石膜的很多性能。金属掺杂DLC膜不仅在缓解薄膜应力方面具有良好的效果,而且还能改变薄膜的力学和摩擦磨损性能。目前,掺杂DLC膜正以单一掺杂向复合掺杂、均匀掺杂向梯度掺杂发展。文章对掺杂DLC膜的研究进展作了概括及分析。     

铁、铬离子掺杂对TiO_2薄膜光催化活性的影响

采用溶胶－凝胶法在釉面砖表面制备了均匀的ＴｉＯ２薄膜,并研究了铁、铬离子掺杂对ＴｉＯ２光催化性能影响．对罗丹明Ｂ的光降解实验表明,适量的铁、铬离子掺杂均可提高ＴｉＯ２薄膜的光催化活性,铁离子的掺杂效果明显高于铬离子,而铬离子的掺杂方式影响ＴｉＯ２薄膜的光催化活性,这主要基于它们不同的掺杂机理     

Synthesis and studies on effect of indium doping on physical properties of electrodeposited CdSe thin films

Semiconducting CdSe and indium doped CdSe (In: CdSe) thin films have been synthesized on stainless steel and fluorine doped tin oxide coated glass substrates in an aqueous medium using a potentiostatic mode of electrodeposition. The doping concentration of indium has been optimized to 0.15 vol% using the reliable photoelectrochemical technique. To study the effect of indium doping these films are characterized using X-ray diffraction, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, elemental mapping, Raman spectroscopy, contact angle measurement and UV–visible spectrophotometry techniques. CdSe and In: CdSe thin films are low crystalline with a cubic crystal structure. The valence states of CdSe and In: CdSe thin films are analyzed by means of XPS. Undoped CdSe thin film shows fiberlike morphology, which transforms into a beautiful web of nanofibers upon doping. The Elemental composition of both films analyzed by means of energy dispersive X-ray spectroscopy. Raman studies show transverse optical and longitudinal optical modes of phonon. Indium doping improves the hydrophilic nature of CdSe photoanode. The optical band gap (direct) found to be decreased from 2.02 to 1.67 eV upon indium doping. Both films are photoactive in nature.