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共振隧穿二极管基础电路的模拟与分析 总被引:1,自引:0,他引:1
简单介绍了RTD的器件性和器件模型,用HSPICE模拟出RTD与电阻、MOS晶体管、RTD本身结合的电路特性。通过对不同电路参数I-V特性的模拟和分析,为理解RTD器件机理和构造复杂电路提供了初步的基础。 相似文献
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阐述了电路模拟在设计和研制大规模集成过程中的必要性和重要意义,器件模型在电路模拟中的重要性以及器件模拟与器件模型的关系;在器件模拟通用软件形成过程的基础上重点讨论了RTD的器件模型、器件模拟和电路模拟软件SPICE三个课题;介绍了基于物理参数I-V方程RTD模型和高斯函数、指数函数RTD直流模型;利用ATLAS器件模拟通用软件对RTD进行了器件模拟,得到了势垒和势阱宽度、E区掺杂浓度等对RTDI-V特性的影响;以包含RTD电路的SPICE电路模拟中的文字逻辑门为例,通过电路模拟验证了其逻辑功能,对设计该电路起到指导和参考作用。 相似文献
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设计并用分子束外延技术生长了InP基InGaAs/AlAs体系RTD材料,采用传统湿法腐蚀、光学接触式光刻、金属剥离、台面隔离和空气桥互连工艺,研制出了具有优良负阻特性和较高阻性截止频率的InP基RTD单管,器件正向PVCR为17.5,反向PVCR为28,峰值电流密度为56kA/cm^2,采用RNC电路模型进行数据拟合后得到阻性截止频率为82.8GHz,实验为今后更高性能RTD单管的研制,以及RTD与其他高速高频三端器件单片集成电路的设计与研制奠定了基础。 相似文献
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共振隧穿二极管基础电路的模拟与分析 总被引:1,自引:1,他引:0
简单介绍了RTD的器件特性和器件模型 ,用HSPICE模拟出RTD与电阻、MOS晶体管、RTD本身结合的电路特性。通过对不同电路参数I V特性的模拟和分析 ,为理解RTD器件机理和构造复杂电路提供了初步的基础 相似文献
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简单介绍了RTD的器件特性和器件模型,用HSPICE模拟出RTD与电阻、MOS晶体管、RTD本身结合的电路特性.通过对不同电路参数I-V特性的模拟和分析,为理解RTD器件机理和构造复杂电路提供了初步的基础. 相似文献
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RTD交流小信号等效电路模型是分析RTD交流特性的基础,也是用网络分析仪测量S参数,拟合提取交流参数和计算截止频率fR的依据。精确、合理的等效电路模型有助于深入理解RTD的工作原理,也对RTD器件和RTD集成电路的设计起重要的指导作用。介绍了四种常见而又重要的RTD交流小信号等效电路模型。 相似文献
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提出了一种基于负阻器件共振隧穿二极管(RTD)与MOSFET结合的新型压控振荡器(VCO),并利用了高级设计系统(ADS)软件对该振荡器的可行性进行了电路仿真,利用分立RTD、MOSFET器件实现了此种VCO,实际调频范围在20~26 MHz之间。RTD与三端器件的连接方式不同可呈现不同的调制I-V特性,这种调制特性对基于RTD的振荡电路的频率也会产生影响。通过深入研究这种调制对振荡电路频率产生的影响,得到多种不同于常规方法的电压控制频率方式,其中一些具有很好的线性度。因此该电路的研究对于RTD在高频、高速振荡电路中的进一步应用具有重要意义。 相似文献
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Analysis of frequency divider RTD circuits 总被引:1,自引:0,他引:1
Quintana J.M. Avedillo M.J. 《IEEE transactions on circuits and systems. I, Regular papers》2005,52(10):2234-2247
The behavior of a novel circuit topology able to implement a frequency divider is studied. This circuit is composed of a resonant tunnelling diode (RTD), an inductor, and a capacitor, so it exhibits a very high operating frequency and low power consumption. It employs the period-adding sequences which appear in its bifurcation diagram to perform the frequency division. Compared to a previously reported similar circuit, it has wider operation windows and a higher division factor for the driver frequency, while maintaining the extremely high operating frequency, its simplicity, and the division factor tunability through the selection of circuit parameters. Simulation results using the HSPICE RTD model from project LOCOM as well as several realistic parasitics elements are given, which confirm the theoretical capabilities previously analyzed. 相似文献
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Zhiqiang Li Hailin Tang Haitao Liu Yi Liang Qian Li Ning An Jianping Zeng Wenjie Wang Yongzhong Xiong 《半导体学报》2017,38(6):064005-4
Resonant tunneling diodes (RTD) have the potential for compact and coherent terahertz (THz) sources operating at room temperature, but their low output power severely restricts their application in THz frequency range. In this paper, two methods are adopted to increase the peak current of RTD for enhancing its output power. First, different metal contact systems (including Pt/Ti/Pt/Au and AuGe/Ni/Au) for RTD contact are introduced, and a higher current of RTD with Pt/Ti/Pt/Au contact demonstrates the superior contact characteristic of Pt/Ti/Pt/Au contact system. Second, the double barrier structure (DBS) of RTD is well designed to further improve the characteristic of RTD, and a high peak current of 154 kA/cm2 is achieved at room temperature. The improved peak current is very beneficial for increasing the output power of RTD oscillator. 相似文献
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Peiji Zhao Hong Liang Cui Woolard D.L. Jensen K.L. Buot F.A. 《Electron Devices, IEEE Transactions on》2001,48(4):614-627
The equivalent circuit parameters of resonant tunneling diodes (RTD) are extracted from numerical simulation results for RTDs. The RTD models used in this paper are double barrier structures. The influence of the resonant tunneling structure (RTS) parameters, such as the height of barriers, the width of the quantum well, the width of the spacers, and the width of the barriers, on the device parameters are systematically discussed. The effects of device temperature on device parameters are also discussed. Scattering between electrons and phonons greatly affects device parameters and thereby the function of the RTDs. Physical explanations about how the structure parameters and device temperature influence the device parameters are provided. Based on the analysis results, a general way to get an RTD oscillator with a higher maximum frequency is suggested 相似文献
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The small and large-signal response of the resonant tunneling diode at high-frequencies is studied using a quantum simulator. The Poisson and Schrodinger equations are solved self-consistently for each harmonic using the harmonic balance technique. This ensures that the total current, consisting of the displacement plus conduction currents, is conserved across the device for each harmonic. The RTD exhibits an increased capacitance in the negative differential conductance (NDC) region in agreement with experimental data. As recently proposed this capacitance increase results from the formation of an emitter well capacitor when the well discharges. The derivation of the RTD capacitance from a quasi-static analysis using the differential variation of the de charge in the RTD is shown to be not applicable because the RTD well charges through the cathode but discharges through the anode. The frequency dependence of the conductance and susceptance is similar to reported experimental data. A large frequency dependence of the admittance is only observed when the RTD is biased in the negative differential conductance (NDC) region. These calculations predict an effective reduction of the RTD conductance and capacitance at high-frequency in the NDC region. This effect can be modeled using a quantum inductance in series with the negative resistance of the RTD as recently proposed. Due to the simultaneous reduction of both the conductance and the capacitance at high-frequency in the NDC region the maximum frequency of oscillation does not differ much from its estimate using the low frequency conductance and capacitance. The large-signal response at high-frequency of an RTD biased in the negative differential region is also presented in this paper. The large-signal negative-conductance is shown to decrease with both increasing frequency and ac voltage 相似文献