Design of a Switched Broad-Band Communications Network for Interactive Services

The congestion in broad-band communications networks resulting from the increased demand for interactive services is considered. It is shown that services such as a video library could not be provided to the majority of subscribers in a conventional CATV network. A design is developed for a space division multiplex broad-band network which can be expanded at minimum cost to meet an increasing demand for interactive services. The network contains two signal distribution networks: a cablecast system similar to the Rediffusion system, and a switched communication network providing point-to-point circuits for both one-way and two-way services. All broad-band signals are transmitted to the subscribers in the 1- to 10-MHz spectrum, permitting the use of twisted pair video cables and a minimum number of cable amplifiers. The broad-band cable network (BCN) is organized around 15 local switching exchanges and one central exchange. Multipoint switches in local exchanges under wired-logic circuit control connect individual subscriber communication lines to any channel. Crosspoint matrix switching groups in the local and central exchanges connect communication circuits in the broad-band communication network under programmed computer control. This network is accessed via links terminating on one channel of the multiposition switches. Per-subscriber costs are estimated to be 190 dollars for a cablecast system serving 3800 subscribers. Additional expenditures per subscriber of 40 dollars for fixed costs and 40 dollars for variable costs would provide interactive services. The range of interactive services provided would be extremely flexible, including both one-way video library service and point-to-point two-way communications.     

Device technologies for RF front-end circuits in next-generation wireless communications

Next-generation high data rate wireless communication systems offer completely new ways to access information and services. To provide higher data speed and data bandwidth, RF transceivers in next-generation communications are expected to offer higher RF performance in both transmitting and receiving circuitry to meet quality of service. The semiconductor device technologies chosen will depend greatly on the tradeoffs between manufacturing cost and circuit performance requirements, as well as on variations in system architecture. It is hard to find a single semiconductor device technology that offers a total solution to RF transceiver building blocks in terms of system-on-chip integration. The choices of device technologies for each constituent component are important and complicated issues. We review the general performance requirement of key components for RF transceivers for next-generation wireless communications. State-of-the-art high-speed transistor technologies are presented to assess the capabilities and limitations of each technology in the arena of high data rate wireless communications. The pros and cons of each technology are presented and the feasible semiconductor device technologies for next-generation RF transceivers can be chosen upon the discretion of system integrators.     

A new satellite communication system integrated into publicswitched networks-DYANET

A system concept of a common alternative routing system is proposed for reducing total network costs by integrating satellite communications into public-switched networks, where satellite systems carry overflow traffic from terrestrial systems through common satellite channels. This concept has been realized by a satellite communication system called DYANET (dynamic channel assigning and routing satellite aided digital networks), which provides trunk circuits in combination with terrestrial systems. The key technologies developed for DYANET are a centralized network control system and a transponder hopping demand assignment TDMA (time-division multiple-access) system, to assure single-hop connection and to use satellite channel efficiently. The authors describe the system concept and configuration, the network control system, and the results of its commercial use     

Distributed circuit design with transmisssion line elements

A short length of transmission line can be chosen as a basic circuit element. Systems containing such elements can then be synthesized to do an amazing number of things. For example, commensurate lines, all multiples of a given length with differing characteristic impedances but with common propagation constant, can be interconnected to realize microwave filters, broad-band transformers, broad-band delay lines with amplitude selectivity, and distributed RC structures. The fundamental ideas underlying the synthesis of commensurate transmission line circuits are presented in this paper in a tutorial fashion. The presentation is based on the scattering formalism and Richard's Theorem. The discussion is liberally sprinkled with design illustrations chosen from current practice.     

Wide-Band Equivalent Circuits of Microwave Planar Networks

A broad-band equivalent circuit of a generic microwave planar network is derived in terms of lumped constant elements. Contrary to previously proposed equivalent circuits, whose elements are strongly frequency dependent, the elements of the new one show only a smooth dependence on the frequency, because of the dispersion properties of microstrip structures. The equivalent circuit proposed is therefore easy to handle and is shown to be a useful basis for direct synthesis of planar structures. Good agreement with the theory is demonstrated by experiments performed on structures with different geometries up to 12.5 Ghz, by using equivalent circuits whose elements are assumed to be constant with the frequency.     

毫米波无线通信半导体器件技术发展趋势

随着通信产业尤其是移动通信的高速发展,无线电频谱的低端频率已趋饱和。采用各种调制方法或多址技术扩大通信系统的容量,提高频谱的利用率,也无法满足未来通信发展的需求,因而实现高速、宽带的无线通信势必向微波高频段开发新的频谱资源。毫米波由于其波长短、频带宽,可以有效地解决高速宽带无线接入面临的许多问题,因而在短距离无线通信中有着广泛的应用前景。各种半导体器件是信息和通信技术(ICT)的硬件基础,创造性研发满足毫米波无线通信应用的新兴半导体技术和电路,是提升通信系统容量、解决构建新一代通信系统关键问题的主要技术推手。文章沿着毫米波半导体器件技术创新发展脉络,从相控阵等关键技术的系统架构、半导体材料和工艺、器件设计和封装测试入手,分析总结了第五代(5G)、第六代(6G)移动通信技术毫米波系统和器件技术发展趋势。以美国DARPA的MIDAS计划为例,阐释了军用毫米波器件技术的研究前沿和进展。     

Receiver Front-End Circuits for Future Generations of Wireless Communications

In this paper, new receiver concepts and CMOS circuits for future wireless communications applications are introduced. The concepts derived are applied to a few classes of wireless communications standards that are broad-band at radio frequencies and/or require a broad-band baseband circuitry. Multimode multiband operation and adaptivity as key requirements for future generation receivers are highlighted throughout the paper. The tradeoffs between power consumption, noise figure and linearity performance of low-noise amplifiers, mixers, and intermediate frequency filters are considered too.     

用于通信ASIC的高速BiCMOS逻辑电路

提出了几种通信用BiCMOS逻辑门电路的实现方案。这些逻辑门均可在低电源电压(2.0~3.0 V)下,采用BiCMOS工艺和深亚微米技术精心设计及制作,并经过比较对其作出评价。分析和实验结果表明,所设计的电路不但具有确定的逻辑功能,而且具备高速、低耗、低电源电压和全摆幅的特性,因而完全适用于高速数字通信系统中。     

Data Transmission Implementation on Broad-Band Networks

Broad-band networks present many advantages for the implemention of data transmission circuits. Whereas communication system concepts are universally applicable, there are many unique details and practial considerations involved in design and operation of broad-band networks. This paper describes broad-band configurations and their system design implications and includes a discussion of current modem designs, spectral occupancy, and modulation characteristics configurations and protocols, interference, and error control, as well as broad-band network control and maintenance. In addition, a data transmission network addressing many of the basic factors and providing multiple services is described.     

Power electronic converters for switched reluctance drives

A number of power electronic converter circuits exist for switched reluctance motor (SRM) drives which are generally applicable to most loads. A larger number of circuits exist which are suitable for particular niche applications, but which have the potential to be the most cost-effective within that niche. Due to the variable methods of operation of these circuits and the rapid progress in this field, comparisons of these circuits have so far been limited. This paper attempts to bring together the sum total of power converter topologies so far published for SRM drives. A novel classification methodology is presented. The power converters are compared using a straightforward total semiconductor VA per phase sum, and the relative cost of the drive system elements is considered     

Hardware technology for the Hitachi MP5800 series (HDS SkylineSeries)

The Hitachi MP5800 series (HDS Skyline Series^TM) has been developed as the top-of-the-line member of the M Parallel Series general computer family. Its highlights include the highest processor performance, dramatically reduced installation requirements (footprint and power consumption), and enhanced reliability and availability. To achieve these goals, innovative technologies have been developed: semiconductor technology called Advanced CMOS-ECL (ACE), which combines high speed emitter coupled logic (ECL) and high density complementary metal oxide semiconductor (CMOS) circuits, one-module processor, which employs a glass ceramic substrate, a high density packaging scheme whereby up to four instruction processors (IPs) are mounted on a single printed wiring board, a cooling technology for large scale integration (LSI) chips with a power consumption as high as 140 W/chip, and a compact high-efficiency power supply system     

基于电力调度通信自动化的调度数据网在电力系统中的应用

随着电力需求的不断增加和新能源的不断融入,电力系统管理和调度面临着前所未有的挑战。文中研究了基于电力调度通信自动化的调度数据网在电力系统中的应用,探讨了其在监控、调度、安全性和可靠性方面的重要作用。首先,论述了电力调度通信自动化,明确了电力系统调度的基本原理、需求以及电力调度通信自动化的基本概念、技术及优势。其次,分别从监控、调度、安全和可靠性等方面,探讨了调度数据网在电力系统中的具体应用。最后,结合具体案例进行了分析,有助于推动调度数据网在电力系统中的深入应用,进而为电力系统的安全高效运行提供可靠的保障。     

Flip chip die attach development for multichip mechatronics powerpackages

New package innovations are needed to address the next generation system requirements of the automotive market. Enhanced system functionality from semiconductor components and overall cost reduction demands drive multichip package solutions. The use of semiconductor devices to switch, control and monitor high current loads will integrate logic and power devices on a common substrate with requirements for effective power dissipation, current carrying capability and fine width conductor features for the control device and interconnections. To achieve these goals Motorola's Advanced Interconnection Systems Laboratory, Munich, has developed a new package concept, a multichip mechatronics power package, utilizing flip chip die attach technology and electroplated eutectic SnPb solder bumps. With the goal to deliver an advanced package platform to cover different power levels in the system architecture,the several substrate technologies were evaluated     

Communication ICs — market leaders in microelectronics

In recent years communication ICs became the fastest growing semiconductor market segment mainly driven by personal wireless communication products like pagers or mobile phones and internet applications with their permanent demand on increasing bandwidth. The high volume consumer market and its demand for low-cost, low-power, and highly integrated solutions had stimulated RF design engineers all over the world to develop novel integrated solutions for communication devices with an innovative advance that is more close to Moore’s law than it was in the past. This was made possible once by a great progress in semiconductor technology, where well established silicon and silicon bipolar technologies extend the operating range steadily up to higher frequencies in the GHz range at the expense of GaAs technology which is driven back to niche products like power amplifiers and to communication techniques in the 40-Gbits/s range and above. On the other hand the integration of a complete system with a single technology has also consequences to the topology of the system and that has led to fundamental changes in system design procedures, which are treated by more sophisticated design tools which cover both system and circuit design and bring them close together. In this paper some actual trends in the development of communication ICs are presented and examples of recently published devices are given.     

High-power robust semiconductor electronics technologies in the new millennium

This paper presents an overview of power semiconductor devices for the development of advanced robust high-performance power electronic systems for the new millennium. Material and device technologies on silicon and wide energy band-gap semiconductors are discussed along with switching circuits and topologies. Short-term and long-term reliability issues of power semiconductor devices are discussed. An approach is presented to correlate converter field failures to dynamic switching stresses, residual defects and contaminants left in the semiconductor power switch, packaging, and thermal management. Component and system level simulation, modeling and CAD requirements are evaluated. System-level optimization is proposed as an essential requirement to develop robust power systems at affordable cost.     

Instrumentation Problems Encountered Making Man-Made Electromagnetic Noise Measurements for Predicting Communication System Performance

One of the factors involved in communication system performance is the electromagnetic interference environment (broad-band radiated electronic noise). Attempts are often made to use commercially available radio-frequency interference field intensity meters for these measurements. Measurements made with these instruments are of limited use since detector functions like peak and quasi-peak are not useful parameters in statistical communication theory. It is recommended, instead, that rms voltage be measured simultaneously with average voltage and average logarithm of the voltage. These latter three parameters may be used to infer the amplitude probability distribution, which is a required statistic for predicting the performance of communication systems. Data are given on dynamic range requirements for accurate measurement of these statistical parameters for a given man-made noise sample. An Appendix contains several hardware solutions to the problems posed in this paper.     

Modeling of spiking analog neural circuits using organic semiconductor thin film transistors with silicon oxide nitride semiconductor gates

This paper uses the results of the characterization of amorphous semiconductor thin film transistors (TFTs) with the quasi-permanent memory structure referred to as silicon oxide nitride semiconductor (SONOS) gates, to model spiking neural circuits. SONOS gates were fabricated and characterized. In addition, MOSFETs using organic copper phthalocyanine (CuPc) were fabricated with these SONOS gates to demonstrate proof of concept performance. Analog spiking circuits were then modeled using these low performance TFTs to demonstrate the general suitability of organic TFTs in neural circuits. The basic circuit utilizes a standard comparator with charge and discharge circuits. A simple Hebbian learning circuit was added to charge and discharge the SONOS device. The use of these elements allows for the design and fabrication of high-density 3-dimensional circuits that can achieve the interconnect density of biological neural systems.     

Integrated antenna with direct conversion circuitry for broad-band millimeter-wave communications

A compact integrated antenna with direct quadrature conversion circuitry for broad-band millimeter-wave communications is proposed. The conversion circuits include two even-harmonic mixers based on antiparallel diode pairs (APDPs). The equivalent circuit of the APDP derived here provides good agreement with the measured data from 17 to 23 GHz. Overall phase and amplitude imbalance between the in-phase/quadrature (I/Q) output channels are less than 1.2/spl deg/ and 1 dB at IFs of 10 and 100 MHz, respectively. An overall RF power conversion loss of 14.6 dB at the quadrature I/Q channels including the antenna is achieved in the frequency range from 39.75 to 40.25 GHz with a local oscillator (LO) power level of 11.8 dBm. LO leakages at 20 and 40 GHz are -31.5 and -44.8 dBm, respectively. In order to demonstrate the system capabilities for broad-band digital communication, a communication link is built with a pair of the proposed front-ends. Data transmission up to 1 Gb/s data rate for quadrature phase-shift keying modulation is demonstrated.     

Technology of InP-based 1.55-μm ultrafast OEMMICs: 40-Gbit/sbroad-band and 38/60-GHz narrow-band photoreceivers

For future long-haul communication systems operating at bitrates of 40 Gbit/s and for broad-band mobile access systems using 38- or 60-GHz carrier frequencies, ultrafast photoreceivers have to be provided. Therefore, an integration concept for InP-based optoelectronic microwave monolithic integrated circuits for the 1.55-μm wavelength regime is demonstrated, which allows independent optimization of the constituting devices. Two different types of photodetectors (PDs), a waveguide-integrated PIN photodiode (PD) and a top-illuminated metal-semiconductor-metal PD, both having bandwidths of up to 70 GHz, have been developed. These are fabricated together with different amplifier designs employing high electron mobility transistors which exhibit transit frequencies of up to 90 GHz. The application to a 40-Gbit/s broadband photoreceiver for high-bit-rate time-division multiplexing systems is reported, as well as the application to 38- and 60-GHz narrow-band photoreceivers for use as optic/millimeterwave converters in mobile communication systems     

Diverse waveform generation using semiconductor lasers for radar and microwave applications

The possibility of using semiconductor lasers to conveniently generate diverse microwave waveforms for radar and microwave applications is studied both numerically and experimentally. Such waveforms are generated from the dynamical states of semiconductor lasers in different perturbation schemes and varying operating conditions. Using an optical injection scheme, broad-band chaotic microwave waveforms and tunable narrow-band harmonic microwaves over a broad frequency range can be generated. Using an optoelectronic feedback scheme, chaotic pulsing, regular pulsing, frequency-locked pulsing, and quasi-periodic pulsing waveforms are generated. These optically generated microwave waveforms can be easily amplified and radiated out using microwave amplifiers and antennas. The power spectra, time series, and autocorrelation traces of such waveforms are studied. The peak-sidelobe level is calculated to quantitatively compare the correlation characteristics of these waveforms. A broad-band chaotic waveform with a clean single-spike /spl delta/-function-like correlation profile useful for radar and other applications that demand unambiguous correlation profile is demonstrated experimentally.