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1.
Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B.  相似文献   

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We report the measured total charge-transfer (electron-capture) cross sections for the ground state O2+(X2Πg) ions with H2 and O2 molecular gases in the collision energy range between 0.50 and 2 keV. The time-of-flight technique has been used to measure the fast neutral products from O2+ charge transfer reactions. The analyzed process has cross sections that continue to increase slowly, as a function of incident energy. Measured cross sections for O2++H2, O2 systems are compared with previously available experimental and theoretical results in the literature.  相似文献   

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In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent kp method in the framework of the effective mass theory. Solving a full 8 × 8 Kane''s Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems. The trends in the calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole gas, are analyzed as a function of the acceptor doping concentration and the well width. Effects of temperature in the PL spectra are also investigated. This is the first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures and can be used as a guide for the design of nanostructured devices such as optoelectronic devices, solar cells, and others.  相似文献   

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The use of spectroscopic techniques has shown that human serum albumin (HSA) undergoes reversible self-aggregation through protein–protein interactions. It ensures the subsequent overlapping of electron clouds along with the stiffening of the conformation of the interpenetrating network of amino acids of adjacent HSA molecules. The HSA oxidation process related to the transfer of one electron was investigated by pulse radiolysis and photochemical methods. It has been shown that the irradiation of HSA solutions under oxidative stress conditions results in the formation of stable protein aggregates. The HSA aggregates induced by ionizing radiation are characterized by specific fluorescence compared to the emission of non-irradiated solutions. We assume that HSA dimers are mainly responsible for the new emission. Dityrosine produced by the intermolecular recombination of protein tyrosine radicals as a result of radiolysis of an aqueous solution of the protein is the main cause of HSA aggregation by cross-linking. Analysis of the oxidation process of HSA confirmed that the reaction of mild oxidants (Br2N3, SO4) with albumin leads to the formation of covalent bonds between tyrosine residues. In the case of OH radicals and partly, Cl2, species other than DT are formed. The light emission of this species is similar to the emission of self-associated HSA.  相似文献   

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Numerical simulations are conducted to study the current-matching effect and operation mechanisms in and to design the optimized device structure of InGaN/Si tandem cells. The characteristics of short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) of InGaN/Si tandem cells are determined by the current-matching effect. The similar trend of η to that of Jsc shows that Jsc is a dominant factor in determining the performance of InGaN/Si tandem cells. In addition, the combined effects of the Jsc, Voc, and FF lead to an optimized η in the medium-indium, xpn-InGaNInGaNtoSi, InGaN/Si tandem cell. At xpn-InGaNInGaNtoSi, the Jsc of the InGaN subcell is equal to that of the Si subcell such that an InGaN/Si tandem cell reaches the current matching condition to operate at the maximum power point. Similar to the Jsc and FF, the η for low- xpn-InGaN<xpnInGaNInGaNtoSi and high-In xpn-InGaN>xpn-InGaNInGaNtoSi InGaN/Si tandem cells are InGaN- and Si subcell-limited, respectively. Furthermore, the p- and n-layer thicknesses, indium content, and position of depletion region of InGaN subcell should be adjusted to reapportion the light between the two subcells and to achieve the maximum conversion efficiency. With appropriate thicknesses of p- and n-InGaN, In0.5–0.6Ga0.5–0.4 N/Si tandem cells can exhibit as high as approximately 34% to 36.5% conversion efficiency, demonstrating that a medium-indium InGaN/Si tandem cell results in a high-efficiency solar cell. Simulation results determine that the current-matching effect and operation mechanisms of InGaN/Si tandem cells can be utilized for efficiency enhancement through the optimized device structures.  相似文献   

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If an exciton and a photon can change each other’s properties, indicating that the regime of their strong bond is achieved, it usually happens in standard microcavity devices, where the large overlap between the ’confined’ cavity photons and the 2D excitons enable the hybridization and the band gap opening in the parabolic photonic branch (as clear evidence of the strong exciton–photon coupling). Here, we show that the strong light–matter coupling can occur beyond the microcavity device setup, i.e., between the ’free’ s(TE) photons and excitons. The s(TE) exciton–polariton is a polarization mode, which (contrary to the p(TM) mode) appears only as a coexistence of a photon and an exciton, i.e., it vanishes in the non-retarded limit (c). We show that a thin fullerene C60 crystalline film (consisting of N C60 single layers) deposited on an Al2O3 dielectric surface supports strong evanescent s(TE)-polarized exciton–polariton. The calculated Rabi splitting is more than Ω=500 meV for N=10, with a tendency to increase with N, indicating a very strong photonic character of the exciton–polariton.  相似文献   

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Relevant immunomodulatory effects have been proposed following allogeneic cell-based therapy with human periodontal ligament stem cells (hPDLSCs). This study aimed to examine the influence of shear stress on the immunosuppressive capacity of hPDLSCs. Cells were subjected to shear stress at different magnitudes (0.5, 5 and 10 dyn/cm2). The expression of immunosuppressive markers was evaluated in shear stress-induced hPDLSCs using qRT-PCR, western blot, enzyme activity and enzyme-linked immunosorbent assays. The effects of a shear stress-derived condition medium (SS-CM) on T cell proliferation were examined using a resazurin assay. Treg differentiation was investigated using qRT-PCR and flow cytometry analysis. Our results revealed that shear stress increased mRNA expression of IDO and COX2 but not TGF-β1 and IFN-γ. IDO activity, kynurenine and active TGF-β1 increased in SS-CM when compared to the non-shear stress-derived conditioned medium (CTL-CM). The amount of kynurenine in SS-CM was reduced in the presence of cycloheximide and ERK inhibitor. Subsequently, T cell proliferation decreased in SS-CM compared to CTL-CM. Treg differentiation was promoted in SS-CM, indicated by FOXP3, IL-10 expression and CD4+CD25hiCD127lo/ subpopulation. In conclusion, shear stress promotes kynurenine production through ERK signalling in hPDLSC, leading to the inhibition of T cell proliferation and the promotion of Treg cell differentiation.  相似文献   

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We report photoreflectance (PR) and photoluminescence (PL) investigations of the electronic and polarization properties of different aspect ratio (height/diameter) InGaAs quantum rods (QRs) embedded in InGaAs quantum wells (QWs). These nanostructures were grown by molecular beam epitaxy using As2or As4sources. The impact of the As source on the spectral and polarization features of the QR- and QW-related interband transitions was investigated and explained in terms of the carrier confinement effects caused by variation of composition contrast between the QR material and the surrounding well. Polarized PR and PL measurements reveal that the polarization has a preferential direction along the [11¯0] crystal axis with a large optical anisotropy of about 60% in the (001) plane for high aspect ratio (4.1:1) InGaAs QRs. As a result, in PL spectra, the transverse magnetic mode dominated (11¯0)-cleaved surfaces (TM[001]>TE[110]), whereas the transverse electric mode prevailed for (110)-cleaved surfaces (TM[001]<TE[11¯0]). This strong optical anisotropy in the (001) plane is interpreted in terms of the hole wavefunction orientation along the [11¯0] direction for high aspect ratio QRs.  相似文献   

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The execution step in apoptosis is the permeabilization of the outer mitochondrial membrane, controlled by Bcl-2 family proteins. The physical interactions between the different proteins in this family and their relative abundance literally determine the fate of the cells. These interactions, however, are difficult to quantify, as they occur in a lipid membrane and involve proteins with multiple conformations and stoichiometries which can exist both in soluble and membrane. Here we focus on the interaction between two core Bcl-2 family members, the executor pore-forming protein Bax and the truncated form of the activator protein Bid (tBid), which we imaged at the single particle level in a mitochondria-like planar supported lipid bilayer. We inferred the conformation of the proteins from their mobility, and detected their transient interactions using a novel single particle cross-correlation analysis. We show that both tBid and Bax have at least two different conformations at the membrane, and that their affinity for one another increases by one order of magnitude (with a 2D-KD decreasing from ≃1.6μm2 to ≃0.1μm2) when they pass from their loosely membrane-associated to their transmembrane form. We conclude by proposing an updated molecular model for the activation of Bax by tBid.  相似文献   

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