Electron-beam microcolumn fabrication and testing

In this paper, we report the improvement of a process for full microfabrication of miniaturized electron lenses specially design for low-energy (100 eV) lithography tools. The main advantages of this technique are the following. It is batch processing oriented, meaning that lenses can be easily built in a full wafer fabrication. With this procedure it is possible to develop a completely integrated process for machining arrays of lenses. Lens bores are aligned using an electron lithography process, resulting in highly accurate positioning. Finally, the source lens chip has not only one but several sets of lenses with different aperture-sizes, each producing a different beam diameter. A scheme is proposed with which the appropriate lens can be selected by means of a deflection system.     

Electron-beam lithography for small MOSFET's

Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and submicrometer channel lengths. Results for transistors and ring oscillators are reported.     

Electron-beam annealing of ion-implanted silicon

A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure.     

Electron-beam exposure of optical gratings

Because of electron scattering, optimum exposure conditions for optical gratings written with a scanning electron microscope depend on the grating period. Experimentally determined exposure conditions are given for gratings of periods down to 230 nm deposited on both conducting and nonconducting substrates. Optimum exposures are shown to be in good agreement with theoretical predictions, but exposure latitude is less than predictions indicate.     

Electron-beam addressed liquid-crystal light valve

A new light valve is described. The device is a cathode-ray tube (CRT) that incorporates a liquid-crystal cell as the electron-beam target. This light valve uses simple "slide projector" optics and has demonstrated initial (nonoptimized) performance of 512 × 512 line resolution and > 50:1 contrast ratio.     

Electron-beam controlled switching using quartz and polycrystallineZnS

Results of electron-beam controlled switching experiments with switch samples of quartz crystal and polycrystalline zinc selenide (ZnSe) are presented. For switch samples of both materials, drastic reductions of the switch resistance were induced by the electron beam. The quartz sample showed very fast temporal response (less than 1 ns) with potential applicability for current control. The ZnSe samples, on the other hand, showed longer current transients (on the order of 10 ns) with exponential development of the switch resistance after the electron beam pulse     

Electron-beam deflection and registration for information storage

An electron-beam-registering system suitable for use with certain types of magnetic store has been devised. Fabrication techniques are discussed and an improved type of system is proposed which will differentiate between positive and negative directions of travel along the x and y axes.     

电子束直写计算全息图

报道了采用电子束直写制作计算全息图 (CGH)的新方法 ,该方法与传统的计算全息图制作方法相比可以明显提高CGH再现的像质 (信噪比和对比度 )。给出了两种制作方法的对比实验结果 ,同时就量化编码误差对CGH信噪比的影响进行了理论分析。     

Electron-beam systems for precision micron and submicron lithography

This paper discusses the engineering of electron-beam systems for the generation of micron and submicron lithography. Design objectives and options for the electron-beam column, X-Y workpiece stage, laser interferometer, pattern generator, software, and general engineering are the major topics.     

电子束三维光刻技术的研究

在IH(Integrated Harden Polymer Stereo Lithography)技术和电子束光刻技术的基础上提出了电子束微三维光刻技术新概念。对其实现方法的可行性进行了简要的理论分析，并使用SDV—Ⅱ型真空腔在约1．33Pa的真空下对环氧618、WSJ-202和苏州2号抗蚀剂进行了气化试验，得出了它们在真空中的气化实验结果，证明了电子束液态光刻的可行性。     

Software for metrology

Modern measuring instruments are increasingly dependent on embedded code. In this paper, the author reports on an important initiative designed to ensure that metrology software is always up to the mark     

Electron-beam programmable 128K-bit wafer-scale EPROM

The feasibility of using an electron beam to customize and repair a wafer-scale n MOS system has been demonstrated. As the test vehicle, a 128K-bit EPROM was fabricated. All data bits and address decoders incorporate floating-gate FET's, which act as links which can be turned on or off under electron-beam control. Each link can be programmed on 0.4 ms, and once programmed exhibits excellent nonvolatility. Because of the small link size, high programming speed, absence of debris, and ability to program without disturbing the integrity of the passivation, electron-beam programmable links may provide an attractive alternative to laser or fusible link repair and customization techniques.     

Electron-beam defocusing due to high-intensity RF fields

The electric fields associated with a "slow" electro-magnetic wave propagating along an electron beam will modulate this beam; the axial component of field will produce the usual "bunching," while the radial component will cause periodic perturbations in the radius of such an electron beam. This paper presents the results of analytical and experimental studies in an attempt to explain certain features of this defocusing effect of intense RF fields on the beam in a traveling-wave tube. In particular the effect of cathode flux on the RF defocusing of a beam in Brillouin flow is treated.     

Electron-beam fabricated titanium and indium tin oxide position-sensitive detectors

This work reports on the development of an optical position sensitive detector (PSD) which exhibits highly linear output characteristics comparable to complex multilayer sensors and which is based on a simple, two-stage fabrication procedure. Further advantages of this device include the potential for large-area surfaces and the production of comparatively large output signals requiring no amplification or external biasing. Most of these studies were carried out on a Schottky barrier (SB) structure based on crystalline p-silicon and electron-beam evaporated titanium and operated under focused white light. As a comparison of output behaviour, a second testing run was carried out using a red laser diode. The devices had metal layer thicknesses ranging from 2000Å to 180Å and results showed that the highest sensitivities and lowest nonlinearities occurred with PSDs having thinner titanium films. The overall best results were obtained using white light in photovoltaic mode, i.e. with no external biasing. Additionally, we compared these titanium devices to electron-beam deposited indium tin oxide (ITO) devices, and found that the ITO series had much lower outputs and higher nonlinearities. These latter devices were considered to be heterojunction structures of n-ITO/p-Si.     

太赫兹计量研究进展

太赫兹技术的独特性和优越性吸引着众多科学研究者的关注,在生物医药、信息科学、公共安全、量子研究和太空探测等领域具有巨大应用潜力。这些应用的有效性和可信度都需要以太赫兹相关参数的量值溯源为前提。文章以太赫兹光谱、频率、功率和强度等参数为对象,介绍了太赫兹计量研究的最新进展,分析了各种计量技术的特点,以期促进太赫兹计量技术发展,保障太赫兹研究和应用的量值可靠。     

Electron-beam quality requirements for tapered-wiggler free-electron lasers

A general approach to optimization of the free-electron laser interaction is used to develop the scaling of emittance and energy spread requirements for tapered wigglers optimized for highest optical gain at fixede-beam energy extraction. The requirede-beam properties for a high extraction oscillator are found to be quite stringent at visible wavelengths, but state-of-the-art accelerators should be sufficient. The applicability of various methods of emittance acceptance enhancement is examined. One very promising option is a magnet canting scheme for providing two-plane focusing in planar wigglers. Two-plane focusing relaxes the severe emittance requirement resulting from the need to maintain spatial overlap between the optical beam and the free-expandinge-beam. In addition, options for adjusting various system parameters for enhanced emittance acceptance, at reduced gain per unit current, are explored.