α粒子和Kr~+对CaCeTi_2O_7的辐照损伤的Monte Carlo模拟

为研究高能粒子辐照条件下CaCeTi_2O_7基体的微观损伤机制,利用蒙特卡罗软件包SRIM模拟α粒子和Kr~+在0.1~10.0 MeV入射能量范围内,CaCeTi_2O_7的阻止本领、能量损失、平均投影射程和空位分布。结果表明,当不同能量的α粒子入射时,平均投影射程为0.43~40.32μm,平均一个α粒子在单位纳米深度产生的空位数约为10~23个,CaCeTi_2O_7以电子阻止本领为主,能量主要以电离能损的方式损耗;当不同能量的Kr~+入射时,平均投影射程为0.04~2.76μm,平均一个Kr~+在单位纳米深度产生的空位数约为106~2 488个,随着入射粒子能量的增加核阻止本领逐渐减小,电子阻止本领逐渐增加,能量损失方式由声子能损向电离能损方式转变。入射角度由0°增加至75°时,α粒子入射造成的损伤区深度由14.5μm减小至4.0μm,Kr~+入射造成的损伤区深度由1.57μm减小至0.2μm。     

Damage production in GaAs during MeV ion implantation

The influence of the nuclear and electronic energy loss on the damage production in GaAs has been studied by Se⁺ ion implantation at T_I = 293 K with energies ranging from 2 MeV up to 20 MeV. The ion dose was varied between 5 × 10¹² /cm² and 1 × 10¹⁵ /cm². The damage production was investigated using RBS in channeling regime. Temperature and energy dependent backscattering measurements and TEM investigations were performed to study the kind of defects in more detail. The resulting defect profiles are compared with the depth distribution of the nuclear and electronic energy loss which were simulated by TRIM 87. The results show that the remaining defect concentration strongly decreases with increasing implantation energy even if the same energy density is deposited into nuclear processes. We suppose, that the electronic energy loss increases the defect transformation and annealing during implantation at T_I = 293 K. The defects in the samples implanted with energies greater than 5 MeV are characterized as point defects, point defect clusters and small dislocation loops; the kind of defects are the same over the whole implantation depth and the existence of amorphous zones can be widely excluded.     

Radiation damage induced by 5 keV Si ion implantation in strained-Si/Si0.8Ge0.2

The damage distributions induced by ultra low energy ion implantation (5 keV Si⁺) in both strained-Si/Si_0.8Ge_0.2 and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 × 10¹³ to 1 × 10¹⁵ ions/cm². Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 × 10¹⁴ to 4 × 10¹⁴ ions/cm² while the amorphous width is almost the same in both strained and normal Si.     

Ion beam induced damage in InP during heavy-ion elastic recoil detection analysis

Heavy-Ion Elastic Recoil Detection Analysis (HIERDA) is an analytical technique which has undergone rapid development in the past few years with the availability of high-energy Tandem accelerators for materials science applications. HIERDA has found application in the study of various semiconductor systems, particularly III–V compounds. The technique employs a high-energy heavy-ion analysing beam to knock constituent nuclei from the target material and a time of flight and energy (ToF-E) detector system to extract mass and depth of origin information from these recoiling nuclei. Present work examines the sample damage produced in InP under typical analysis conditions. The depth distribution of damage induced by an ¹²⁷I analysing beam of varying energy (54–98 MeV) and dose (10¹³−2 × 10¹⁴ ions/cm²) in InP has been examined using RBS channelling, and cross-sectional TEM.     

北京大学4.5 MV静电加速器核反应分析系统

为满足对聚变堆面向等离子体材料中氘氚滞留问题的研究,北京大学4.5 MV静电加速器在原束线基础上新增核反应分析系统,该系统使用能量0.8～3.6 MeV的H⁺、D⁺、³He⁺和⁴He⁺粒子束流,可对核反应微分截面和样品中元素浓度的深度分布进行测量分析。本文对核反应分析原理、核反应分析系统的设备布局和实验方法进行了讨论,并以D(³He,p)⁴He核反应为例,分析了微分截面计算和样品中氘元素浓度深度分布的数据结果,其深度分辨小于1.5 μm,实验误差约为7.5%。     

Ion beam mixing of titanium films on stainless steel

The ion mixing of Ti-steel bilayers with N⁺, Ar⁺, Ti⁺, Kr⁺ and Xe⁺ ions was investigated by means of Rutherford backscattering spectroscopy (RBS). The mixing rates exhibit a linear scaling with the deposited damage energy f_D. No correlation between the properties of the mixing ion and the mixing efficiency was found. The results are compared with the predictions of ballistic and thermal-spike models.     

RBS studies of the lattice damage caused by 1 Me V Si implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature

The lattice damage accumulation in GaAs and Al_0.3Ga_0.7As/GaAs superlattices by 1 MeV Si⁺irradiation at room temperature and 350°C has been studied. For irradiations at 350°C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 × 10¹⁵ + Si/cm² for GaAs, and is 5 × 10¹⁵ Si/cm² for Al_0.8Ga_0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350°C. The damage accumulation rate for 1 MeV Si ion implantation in Al_0.3Ga_0.7As/GaAs superlattice is less than that in GaAs.     

核电厂离子交换树脂净化能力模拟实验研究

实验选取核电厂废液中典型裂变产物和腐蚀产物离子(Cs+、Sr2+、Co2+)配制水样,针对不同类型树脂、不同树脂层高以及不同床体积流速进行动态交换吸附实验,重点比较了不同条件下核级树脂净化能力(去污因子)的变化。结果表明:树脂层高的增加对去污效果的影响显著,特别是高交联度的树脂,对Cs+、Sr2+、Co2+的去污因子可增加约200%以上;在一定范围内提高床体积流速对树脂的去污效果存在影响,高交联度的树脂流速提高后去污因子有明显上升趋势;在10BV/h(BV=进水流量/树脂装填量)流速下树脂交联度的高低对水样的去污效果影响不明显;在1mg/L水样浓度下,大孔型阳树脂的去污效果较凝胶型阳树脂好;同等条件下,氢/氢氧型混合树脂处理离子态杂质的去污效果较单独的氢型阳树脂好。     

3D hydrogen profiling by elastic recoil detection analysis in transmission geometry

An analytical procedure and a simulation-optimization algorithm are described for hydrogen determination based on elastic recoil detection induced by low-energy ⁴He ions ( 3 MeV) using transmission geometry. Hydrogen concentration depth profiles can be derived from the experimental recoil spectra for a depth range of up to 6 μm with a resolution better than 40 nm at the surface. The method is applied to thin polyimide films irradiated by high-energy heavy ions. The 3D hydrogen distribution is determined with a ⁴He⁺ mubeam. A high-hydrogen-concentration zone below the surface is shown. The hydrogen distribution is seen to evolve during the ⁴He⁺ irradiation.     

螯合剂对铀在小鼠体内分布的影响研究

铀在生物体内的化学形态及分布是评价铀毒性的基础。文章通过尾静脉注射给药方式研究螯合剂对染铀小鼠体内铀分布的影响。通过建立包含主要体液金属离子、小分子配体及UO₂²⁺与螯合剂的热力学平衡模型,采用数值模拟方法研究UO₂²⁺在血液中的形态。实验结果表明：DTPA易与UO₂²⁺形成［(UO₂)₂(OH)DTPA］^2-,对小鼠血液中的UO₂²⁺有明显的促排作用,但在促排的同时对小鼠的肾脏和骨骼有损伤;抗坏血酸对小鼠体内各组织器官的铀促排几乎无作用,但形成的［(UO₂)₂(OH)Ascorbate］²⁺会阻碍肾脏中U(Ⅵ)的代谢;NTA对小鼠体内各组织器官铀的促排作用小,并会促使体内出现固相(UO₂)₃(PO₄)₂·4H₂O,对骨骼有较强的损伤作用,不适合作为铀的促排剂。     

X-ray irradiation of ion-implanted MOS capacitors

He⁺ ion-implanted metal-oxide-semiconductor (MOS) capacitors with two different oxide thickness have been irradiated by X-rays and the depth distribution of the implant damage in the Si–SiO₂ structures have been examined. The efficiency of X-ray annealing of electronic traps caused by implantation and changes in charge populations are reported. The experiment shows that (in the case when defects introduced by implantation are located at the Si–SiO₂ interface) only defects corresponding to the deep levels in the Si can be affected by X-ray irradiation. When defects introduced by ion implantation are located deeper within the Si substrate complete annealing of these defects is observed.     

钾/钠离子对水热合成铯榴石结构的影响

水热合成铯榴石能低温、晶格固化放射性废物¹³⁷Cs,但在放射性废物中Cs⁺通常与同族的K⁺/Na⁺共存,两者可能会对水热合成铯榴石组成和结构产生影响。基于此,参考铯榴石化学计量组成CsAlSi₂O₆,首先利用偏高岭土、纳米二氧化硅和CsOH•H₂O为原料水热合成了铯榴石。然后分别以不同摩尔质量的KOH或NaOH取代CsOH•H₂O,研究了K⁺/Na⁺对水热合成产物组成和结构的影响。结果表明,铯榴石水热晶化温度相对较低,产物微观下呈多晶微球态;K⁺与Cs⁺共存时,体系水热产物主要为铯榴石微球,微球尺寸随K⁺掺入比例的提高而增加,但K⁺主要存在于晶化程度较低的钾铝硅酸盐水合物中,并未参与铯榴石形成;Na⁺与Cs⁺共存时,体系水热产物主要由铯榴石和方沸石(NaAlSi₂O₆•H₂O)组成,Cs⁺和Na⁺各自存在于铯榴石或方沸石结构中。铯榴石相对较低的水热晶化温度及其结构中Cs⁺不能迁移和进行离子交换的特性,使得水热条件下K⁺/Na⁺不能进入先形成的铯榴石结构中的碱金属离子位点。尽管如此,K⁺或Na⁺的存在可降低铯榴石的水热晶化温度、促进铯榴石晶粒生长,且当K⁺或Na⁺与Cs⁺共存时,Cs⁺仍优先进入并稳定固化于铯榴石晶体结构中。     

Radiation effects on MgAl2O4–yttria stabilized ZrO2 composite material irradiated with Ne ions at high temperatures

Spinel (MgAl₂O₄) and yttria stabilized ZrO₂ (YSZ) are candidates for fuel materials for use in nuclear reactors and the optical and insulating materials for fusion reactors. In our previous studies, the amorphization of spinel under 60 keV Xe ion irradiation at RT was observed. On the other hand, amorphization could not be confirmed in YSZ single crystals under the same irradiation conditions. In the present study, the damage evolution process of polycrystalline spinel–YSZ composite materials has been studied by in situ TEM observation during ion irradiation. The irradiation was performed with 30 keV Ne⁺ ions at a flux of 5 × 10¹³ ions cm⁻² s⁻¹ at 923 K and 1473 K, respectively. The observed results revealed a clear difference in morphology of damage depending on irradiation temperature and crystal grains. In the irradiation at 923 K, defect clusters and bubbles were formed homogeneously in YSZ grains. On the other hand, at 1473 K, only bubble formation was observed. The bubbles grew remarkably with increasing ion fluence in both grains. Even though the growth of the bubbles was observed in both grains, the average diameter of grown bubbles in spinel grains was larger than those in YSZ ones. The bubbles tended to form along the grain boundary at both temperatures.     

Damage distributions in LiNbO3 crystal induced by MeV F tilted implantations

X-cut LiNbO₃ crystals have been implanted by 0.8, 1.0 and 1.2 MeV F⁺ tilted at angles of 15°, 45° and 60° with doses of 5 × 10¹⁴, 7 × 10¹⁴ and 5 × 10¹⁴ ions/cm², respectively. The Rutherford backscattering (RBS)/channeling technique was used to investigate the induced damage distributions. The damage profiles were deconvoluted from the measured spectra after considering the energy spread due to the different stopping power of channeled and nonchanneled ions. Good agreements were obtained between the measured damage profiles and the calculated defect profiles by TRIM'90 (transport of ions in matter, version 1990), except that the measured damage concentration was enhanced in the near-surface region. Information on the lateral and longitudinal damage spread in LiNbO₃ crystals was obtained from the damage profiles induced by tilted ion implantations and compared with TRIM'90 calculation.     

UO22+在羟基磷灰石上的吸附

以羟基磷灰石（HA）作骨体外模型结合计算机模拟的方法,研究了UO₂²⁺在HA上的吸附行为以及不同种类的螯合剂对其吸附行为的影响。结果表明,15 min后HA对UO₂²⁺的吸附达到平衡,HA颗粒形貌未发生明显改变,吸附过程符合拟二级动力学方程;乙二胺四乙酸（EDTA）和二乙基三胺五乙酸（DTPA）对HA上UO₂²⁺的促排作用类似,能与UO₂²⁺螯合形成大量的络合离子从而达到促排的目的,但会对骨骼无机相表面造成损伤;柠檬酸对吸附在HA上的UO₂²⁺具有较强的解吸作用,但高浓度的柠檬酸会造成HA颗粒形貌显著变化,因此不适合作为铀的促排剂;抗坏血酸对UO₂²⁺在HA上的解吸没有作用,而氨基三乙酸（NTA）会导致HA对铀的吸附率增加。     

壳聚糖修饰碳纳米管对含铁放射性废水的处理

采用稳定性同位素⁵⁶Fe的硫酸亚铁溶液模拟核医学放射性废水中的⁵⁵Fe、⁵⁹Fe、⁵²Fe,研究经壳聚糖修饰的多壁碳纳米管CS-MWNTs对亚铁离子的吸附效果。并研究不同pH值、温度、时间、平衡离子浓度对吸附量的影响。结果表明,在相同条件下,CS-MWNTs相比原始多壁碳纳米管MWNTs吸附量有较大提升。CS-MWNTs与MWNTs在中性条件下的吸附效果均较酸性条件下的好,而在偏碱性条件下,溶液会发生沉淀,吸附不再是主要作用。CS-MWNTs与MWNTs对亚铁离子的吸附作用约在3 h达到平衡,且均为吸热反应。在室温25 ℃、pH＝5条件下,CS-MWNTs和MWNTs对亚铁离子的饱和吸附量分别为51 mg/g和27 mg/g。两种吸附材料的吸附过程均符合Freundlich方程。     

异质金属竞争配位用于混合配体型氯代异烟酸铀酰配合物的合成调控北大核心CSCD

本工作从基于2,6-二氯异烟酸(H-2,6-dcpca)和2,2′-联吡啶(2,2′-bpy)混合配体的卤代异烟酸铀酰配合物((UO;)(2,6-dcpca);(2,2′-bpy))出发,通过进一步引入第二金属中心(Ag;、Zn;和Cu;)进行竞争配位,实现了对这一混合配体型氯代异烟酸铀酰配合物的结构调控,并成功合成了六种新型混合配体型异质金属铀酰配合物。单晶结构分析表明,这些异质金属节点具有不同的配位行为,可以参与2,2′-bpy和[2,6-dcpca];配体的竞争配位并改变铀酰中心的配位环境,导致最终形成的水热产物具有不同铀酰配位模式和化学结构。同时,由于晶体结构的不同,这些化合物在超分子晶格中的弱相互作用和晶格堆积方式也表现出较大变化。通过第二金属中心的竞争配位策略,实现了混合配体型铀酰配合物中铀酰配位模式的调控及多种异质金属铀酰化合物的制备,证明了基于多重竞争配位的合成调控策略的可行性,并有望在未来用于更多的功能性锕系-有机杂化材料的合成。     

Depth profiling study on the migration of tritium in titanium induced by deuterium-ion bombardment

A thin titanium layer with uniformly absorbed tritium (T/Ti ˜1.0) was bombarded by 390 keV D₃⁺ ions (130 keV per deuteron). Bombardment was performed at low (111 K) and room temperatures up to fluences of 5.9 × 10¹⁸ D/cm² and 3.0 × 10¹⁸ D/cm², respectively. Depth profiles of tritium up to a depth of 0.8 mg/cm² (˜1.8 μm) were measured and the change of the profile with fluence was investigated by means of the T(d, )n nuclear reaction. At both of the temperatures, a dip was formed on the depth profile of tritium at the depth around the projected range, indicating that the deuteron bombardment induced the migration of tritium against the concentration gradient. At the low temperature, the dip showed a gradual growth with fluence and saturation of the growth at the higher fluences, which could not be described by the existing model for isotope mixing. The spectrum of protons from the D(d, p)T reaction obtained in the same measurement suggested that the release of deuterium suddenly started at the final stage of the present bombardment. The dip formed at room temperature was larger than that at the low temperature. The migration of tritium induced by the bombardment is discussed on the basis of the experimental results obtained.     

丝状真菌F54的分离鉴定及其对铯的吸附特性

从新疆放射性污染土壤样本中,采用微生物分离方法,结合压力试验及吸附实验,获得一株对放射性核素污染具有修复能力的土著丝状真菌F54。通过形态学、分子生物学鉴定及Biolog碳源利用实验,F54为镰刀霉菌属真菌,与Fusarium oxysporum strain ATCC MYA-3931同源性最高。最适宜生长条件是:马铃薯葡萄糖培养基,30℃,pH=7.0。菌株F54吸附Cs+的最佳条件是:pH=7.0,30℃,伴随生长进行吸附约3~4d,吸附率最高能达到约84%,常见金属阳离子K~+、Na~+、Ca~(2+)、Mg~(2+)、Al~(3+)、Fe~(3+)对其吸附均有一定的抑制作用。菌株F54能够耐受10kGy的钴源照射,对重金属离子Ni~(2+)、Cr~(3+)、Zn~(2+)、Co~(2+)、Pb~(2+)、Hg~(2+)均有较高耐受性,对放射性137 Cs的吸附率为62%。菌株F54在有较高的重金属离子混合污染的放射性环境中具有一定的修复应用潜能。     

无机锶吸附剂的制备及其应用

为了去除放射性溶液中的90Sr,采用高锰酸钾和氯化锰的水溶液在pH=10~12、60℃的水浴中反应制备了一种MnO2吸附材料,并用X射线衍射法对其进行了初步分析和表征,该样品为α-MnO2和γ-MnO2的混合晶相。采用静态实验对该吸附剂进行研究,并将其与9种常见的天然锶吸附材料进行比较。结果表明:该吸附剂对90Sr的吸附效果明显好于常用天然吸附材料;其对90Sr的吸附速率非常快,约20min即可吸附平衡,且具有较高的理论饱和吸附容量(Q≈0.52mmol/g)和吸附分配系数(Kd),其典型Kd≈104 mL/g;随着硝酸浓度增加90Sr的Kd值迅速降低,当c(HNO3)=0.01mol/L时,Kd≈6×103 mL/g,而当c(HNO3)=0.1mol/L时,Kd值仅为6mL/g,降低了3个数量级;Na+、K+的含量对Kd值的影响较小,随其浓度增加Kd值缓慢降低,但Co2+、Ca2+对锶的Kd值具有较大的影响,随离子浓度增加Kd值快速减小。该吸附剂对模拟和真实放射性废液的90Sr动态去除实验结果表明,其对锶具有很好的吸附性能,可用于去除放射性废水中的90Sr。