Stress analysis of Si1−xGex embedded source/drain junctions

The purpose of this paper is to evaluate the impact of the geometry of embedded Si_1−xGe_x source/drain junctions on the stress field. Stress simulations were performed using TSUPREM4 2D software to further investigate the elastic strain relaxation as a function of Si_1−xGe_x alloy active size, in the regime where no plastic relaxation is present. Moreover, the role of the epilayer thickness and the Ge content on the stress levels is also discussed. The work is complemented with experimental Raman spectroscopy.