波长可调谐准相位匹配光学参量振荡器

利用掺氧化镁周期性极化铌酸锂晶体,对信号光单谐振的准相位匹配光学参量振荡器 的温度调谐特性和输出功率特性进行了理论与实验研究。以LD泵浦的声光调Q准连续Nd∶YAG激光器作为泵浦源,获得了1561～1672nm的可调谐输出,信号光在1064nm泵浦光平均功率为1. 728W时,最大信号光输出为297mW。     

内腔中红外低阈值PPMgLN光学参量振荡器

在理论上对内腔连续单谐振光学参量振荡器(ICSRO)的运转特性进行了简要的分析,并在实验采用LD泵浦的连续Nd:YVO4激光器作为泵浦源,实现了PPMgLN晶体准相位匹配,获得了低阈值高效率ICSRO.光学参量器的阈值仅为3.1 W(808 nm);在泵浦光5W时,获得了370 mW连续中红外激光输出,540 mW信号...     

非临界相位匹配KTP光学参量振荡器的研究

利用1. 06μm激光脉冲泵浦非临界相位匹配(NCPM) KTP光学参量振荡器,获得中心波长1566nm的信号光输出。当泵浦光能量为100mJ时,输出信号光能量约为31. 9mJ ,相应的转换效率为30. 9% ,信号光脉冲宽度(10ns)比泵浦光脉冲宽度(30ns)小得多。当相位匹配角(内角)从90°到80°变化时,信号光调谐范围为1566～1596nm。     

温度调谐准相位匹配光学参量振荡器

对准连续泵浦的准相位匹配(QPM)光参量振荡器(OPO)进行了实验研究。利用二极管(LD)泵浦的Nd：YAG激光器，泵浦周期为29μm的周期极化LiNbO3(PPLN)晶体，得到信号光(1500nm)的高输出功率(平均功率＞100mW)，并且通过调谐晶体温度(80—250℃)，获得了信号光输出波长的调谐范围为1．48一1．54μm。     

温度调谐的MgO∶LiNbO3 光学参量振荡器

采用电光调Q Nd∶YAG经KTP晶体倍频得到0. 532μm的激光,泵浦非临界相位匹配的MgO∶L iNbO3 晶体。当光学参量振荡器(OPO)的输出镜采用对剩余泵浦光高反的腔镜时,泵浦阈值有明显的降低,转换效率提高了2个百分点。     

温度调谐的MgO∶LiNbO3 光学参量振荡器

采用电光调Q Nd∶YAG经KTP晶体倍频得到0.532μm的激光,泵浦非临界相位匹配的MgO∶LiNbO3晶体。当光学参量振荡器(OPO)的输出镜采用对剩余泵浦光高反的腔镜时,泵浦阈值有明显的降低,转换效率提高了2个百分点。     

W级中红外宽调谐光学参量振荡器的研究

报道了一个低阈值、宽调谐、中红外单谐振掺MgO的周期性极化LiNbO3(PPMgLN)晶体光学参量振荡器(OPO)。利用声光调Q的Nd:YVO4激光器作为泵浦源,采用外腔结构,在室温下实现了PPMgLN晶体的准相位匹配(QPM)OPO。OPO阈值仅为0.4 W(重复频率40 kHz,单脉冲能量10μJ,脉宽160 ns);在泵浦光为6.6W(重复频率40 kHz,脉冲能量165μJ,脉宽65 ns)、PPMgLN周期为30μm时,获得了1.13 W的3.61μm中红外脉冲激光输出,光-光转化效率达到17.1%,同时获得了880 mW的1.51μm信号光输出,并且通过改变晶体的周期,实现了闲频光3.13～4.19μm中红外宽带可调谐激光输出。重点讨论了闲频光的功率、调谐和脉冲特性以及功率稳定性问题。     

低阈值宽调谐的内腔调Q Nd:YVO4/PPLN光学参量产生

将多周期极化铌酸锂(PPLN)晶体置于激光二极管(LD)端面抽运的声光调Q Nd:YVO4激光器谐振腔内,实现了准相位匹配内腔光学参量直接产生(QPM-IOPG).PPLN晶体长20 mm,利用外加电场极化法制作,极化沿晶体的z向进行.设定声光Q开关重复频率为19 kHz,通过温度调谐和周期调谐,获得了信号光在1384～1541 nm范围内的连续输出,脉冲宽度约为80 ns.在PPLN晶体温度为140 ℃,极化周期为29 μm时,内腔光参量产生的阈值仅为0.93 W,在3 W激光二极管抽运功率下,获得了140 mW的信号光输出;在极化周期为26.5 μm时,内腔光参量产生的阈值增大到1.36 W,在3 W激光二极管抽运功率下,获得了105 mW的信号光输出.分析了不同极化周期下阈值和转换效率存在差异的原因,对内腔光学参量产生的阈值进行了理论分析和计算.     

周期极化掺镁铌酸锂光参量振荡器的输出光谱特性

实验研究了基于多周期的掺镁铌酸锂晶体光参量振荡器(OPO),分析了光学参量振荡器的输出光谱特性.实验中,采用激光二极管(LD)端面抽运的声光调Q Nd:YVO4激光器作为光参量振荡器的抽运源,谐振腔采用双凹腔结构.在调Q开关重复频率为10 kHz,周期极化掺镁铌酸锂(PPMgLN)晶体的温度为25.4℃的条件下,实验测得光学参量振荡器的振荡阈值为110 mW.当输入的抽运光的平均功率为325 mW时,获得了平均功率为84 mW的信号光输出,其光-光转换效率为25.8%.通过改变周期极化掺镁铌酸锂晶体的温度(25.4～120℃)和极化周期(28.5～30.5 μm),实现了信号光在1449.6～1635 nm范围内的可调谐输出.在室温25.4℃时,观测到了抽运光与信号光的和频光的光谱.实验结果表明.光参量振荡器输出光谱的半峰全宽(FWHM)小于0.5 nm.     

1.57 μm内腔式KTP光学参量振荡器

为了获得1.57μm人眼安全激光输出,采用了一种声光调Q激光二极管（LD）端面抽运的Nd ∶GdVO4全固态激光器作为抽运源的人眼安全波长内腔式KTP光学参量振荡器,获得1.57μm人眼安全激光输出。在注入泵浦功率为6.33 W,重复频率为15 kHz时,1.57μm激光平均输出功率达到405 mW,此时由二极管注入泵浦光至OPO信号光输出功率的转换效率达6.4％;在重复频率为5 kHz时,其脉冲宽度约为2 ns,峰值功率达18.9 kW。在重复频率为15 kHz时,信号光脉冲宽度比消耗后的泵浦光脉冲宽度压缩了13.6倍,比泵浦光脉冲压缩了16倍。实验发现1.57μm的OPO信号光输出功率随脉冲重复频率的增加而有效地增加,此类光参量振荡器有效地压缩了激光脉冲。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.