High-Responsivity Natural-Electrolyte Undersea Photoelectrochemical Photodetector with Self-Powered Cu@GaN Nanowires Network

Undersea optical communication (UOC) has been considered as the most potential next-generation underwater wireless communication technology for ocean exploration. Photodetector is the essential component in UOC system, however, the harsh undersea environment like light attenuation and seawater corrosivity restricts the applications of conventional photodetectors. Herein, a novel natural-electrolyte self-powered photoelectrochemical (PEC) photodetector based on core-shell structured Cu@GaN nanowires (NWs) network is demonstrated and direct utilization of seawater. High quality GaN shell is encapsulated on the Cu NWs network through Ga-coating and high temperature nitridation processes. A Schottky junction along radial direction has formed at the Cu/GaN interface due to the outward diffusion of Cu into the GaN layer. Such a structure provides narrowed band detection on blue light as well as efficient carrier separation. A self-powered undersea PEC photodetector is designed with a mini-pipes connected device chamber, which allows direct indrawing of seawater and blue channel light communication (458 nm). This photodetector works stably for UOC in both shallow and deep-sea conditions in Pacific Ocean area. It shows a high responsivity up to 5.04 mA W⁻¹ and rapid response time of 0.68 ms. This photodetector can be easily integrated to marine equipment without waterproof packaging for the future energy-saving UOC.     

High-performance omnidirectional self-powered photodetector constructed by CsSnBr3/ITO heterostructure film

Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras. However, it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected. Here, a high-performance omnidirectional self-powered photodetector based on the CsSnBr₃/indium tin oxide (ITO) heterostructure film was designed and demonstrated. The as-fabricated photodetector exhibited excellent self-powered photodetection performance, showing responsivity and detectivity up to 35.1 ​mA/W and 1.82 ​× ​10¹⁰ Jones, respectively, along with the smart rise/decay response time of 4 ​ms/9 ​ms. Benefitting from the excellent photoelectric properties of the CsSnBr₃ film as well as the ability of the CsSnBr₃/ITO heterostructure to efficiently separate and collect photo-generated carriers, the as-fabricated photodetector also exhibited excellent omnidirectional self-powered photodetection performance. All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.     

Air-Stable Self-Powered Photodetectors Based on Lead-Free CsBi3I10/SnO2 Heterojunction for Weak Light Detection

Lead halide perovskites (LHPs) have been widely investigated in photodetection applications owing to their intriguing optoelectronic properties. However, the application of LHPs-based photodetectors (PDs) is hindered because of the toxicity of lead and instability in ambient air. Here, an air-stable self-powered photodetector is designed based on all-inorganic lead-free CsBi₃I₁₀/SnO₂ heterojunction. The device exhibits broad spectral response in both UV and visible light, fast response on µs scale, and decent long-term stability. The device holds a faster response speed (t_r/t_d = 7.8/8.8 µs), among the best reported self-powered lead-free perovskites photodetectors. More importantly, the device can display obvious photoresponses even under ultra-weak light intensity as low as 10 pW cm^–2, showing better weak-light sensitivity than previously reported lead-free perovskites photodetectors, to the best of our knowledge. Moreover, the device holds good air stability in the 73 days test without encapsulation. These results suggest that CsBi₃I₁₀/SnO₂-based self-powered PDs with high photodetection capability possess enormous potential in stable and broadband PDs for weak light detection in the future.     

Boosted Responsivity and Tunable Spectral Response in B-Site Substituted 2D Ca2Nb3−xTaxO10 Perovskite Photodetectors

2D Dion-Jacobson perovskite oxides, featuring fascinating optical and electric properties, exhibit great potential in optoelectronic devices. However, the device sensitivity and spectral selectivity are limited. Herein, B-site substituted calcium niobate Ca₂Nb_3−xTa_xO₁₀ (x = 0, 0.5, 1, 1.5) nanosheets are prepared by liquid exfoliation. The photodetectors (PDs) based on these nanosheets exhibit tunable spectral response by tailoring the band gap of the nanosheets. All the Ta-substituted PDs show increased photocurrent and enhanced responsivity, among which the Ca₂Nb_2.5Ta_0.5O₁₀ PD exhibits the optimal performance with a photocurrent of 31.4 µA, a high on–off ratio of 5.6 × 10⁴ and a boosted responsivity of 469.5 A W⁻¹ at 1.0 V toward 295 nm, which is over 7000-fold higher than that of pristine Ca₂Nb₃O₁₀ PD. It is proposed that the significantly optimized responsivity is ascribed to the enhanced photoconductive gain that mainly originates from the introduction of the trap states by the B-site substitution. Nevertheless, excess substitution is detrimental to the responsivity and the response speed. This work demonstrates that the rational control of B-site substitution tailors the band gap and modulates the charge-carrier behaviors in 2D perovskite oxides, which provides an effective avenue for achieving high-performance PDs with tunable spectral response and excellent responsivity.     

Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

Gallium selenide (GaSe) is a layered compound, which has been exploited in nonlinear optical applications and photodetectors due to its anisotropic structure and pseudodirect optical gap. Theoretical studies predict that its 2D form is a potential photocatalyst for water splitting reactions. Herein, the photoelectrochemical (PEC) characterization of GaSe nanoflakes (single‐/few‐layer flakes), produced via liquid phase exfoliation, for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) in both acidic and alkaline media is reported. In 0.5 m H₂SO₄, the GaSe photoelectrodes display the best PEC performance, corresponding to a ratiometric power‐saved metric for HER (Φ_saved,HER) of 0.09% and a ratiometric power‐saved metric for OER (Φ_saved,OER) of 0.25%. When used as PEC‐type photodetectors, GaSe photoelectrodes show a responsivity of ≈0.16 A W^?1 upon 455 nm illumination at a light intensity of 63.5 µW cm^?2 and applied potential of ?0.3 V versus reversible hydrogen electrode (RHE). Stability tests of GaSe photodetectors demonstrated a durable operation over tens of cathodic linear sweep voltammetry scans in 0.5 m H₂SO₄ for HER. In contrast, degradation of photoelectrodes occurred in both alkaline and anodic operation due to the highly oxidizing environment and O₂‐induced (photo)oxidation effects. The results provide new insight into the PEC properties of GaSe nanoflakes for their exploitation in photoelectrocatalysis, PEC‐type photodetectors, and (bio)sensors.     

AlxGa1−xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2 nm GaN quantum well width and 15 nm Al_xGa_1−xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.     

Fast Photothermoelectric Response in CVD-Grown PdSe2 Photodetectors with In-Plane Anisotropy

PdSe₂, a star photosensitive functional material, has been successfully used in photodetectors based on sensing mechanisms of photogating, photoconductive, and photovoltaic effects. Here, a photothermoelectric (PTE) effect is observed in photodetectors based on PdSe₂ flakes grown by chemical vapor deposition. The unique photoresponse arises from an electron temperature gradient instead of electron–hole separation. Direct evidence of the PTE effect is confirmed by a nonlocal photoresponse under zero bias. Moreover, the PdSe₂ photodetector shows high performance in terms of ultrafast response speed (4 µs), high air-stability, broadband spectrum photodetection, reasonable responsivity, and anisotropic optical response. This study paves a new way for developing high-performance photodetectors based on PdSe₂ layered materials.     

An Ultrahigh Responsivity (9.7 mA W−1) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga2O3 Heterostructures

Highly crystallized ZnO–Ga₂O₃ core–shell heterostructure microwire is synthesized by a simple one‐step chemical vapor deposition method, and constructed into a self‐powered solar‐blind (200–280 nm) photodetector with a sharp cutoff wavelength at 266 nm. The device shows an ultrahigh responsivity (9.7 mA W^?1) at 251 nm with a high UV/visible rejection ratio (R _{251 nm}/R _{400 nm}) of 6.9 × 10² under zero bias. The self‐powered device has a fast response speed with rise time shorter than 100 µs and decay time of 900 µs, respectively. The ultrahigh responsivity, high UV/visible rejection ratio, and fast response speed make it highly suitable in practical self‐powered solar‐blind detection. Additinoally, this microstructure heterojunction design method would provide a new approach to realize the high‐performance self‐powered photodetectors.     

Two-Dimensional Antimony-Based Perovskite-Inspired Materials for High-Performance Self-Powered Photodetectors

The ongoing Internet of Things revolution has led to strong demand for low-cost, ubiquitous light sensing based on easy-to-fabricate, self-powered photodetectors. While solution-processable lead-halide perovskites have raised significant hopes in this regard, toxicity concerns have prompted the search for safer, lead-free perovskite-inspired materials (PIMs) with similar optoelectronic potential. Antimony- and bismuth-based PIMs are found particularly promising; however, their self-powered photodetector performance to date has lagged behind the lead-based counterparts. Aiming to realize the full potential of antimony-based PIMs, this study examines, for the first time, the impact of their structural dimensionality on their self-powered photodetection capabilities, with a focus on 2D Cs₃Sb₂I_9−xCl_x and Rb₃Sb₂I₉ and 0D Cs₃Sb₂I₉. The 2D absorbers deliver cutting-edge self-powered photodetector performance, with a more-than-tenfold increase in external quantum efficiency (up to 55%), speed of response (>5 kHz), and linear dynamic range (>four orders of magnitude) compared to prior self-powered A₃M₂X₉ implementations (A⁺: monovalent cation; M³⁺: Sb³⁺/Bi³⁺; X⁻: halide anion). Detailed characterization reveals that such a performance boost originates from the superior carrier lifetimes and reduced exciton self-trapping enabled by the 2D structure. By delivering cutting-edge performance and mechanistic insight, this study represents an important step in lead-free perovskite-inspired optoelectronics toward self-powered, ubiquitous light sensing.     

Near Infrared Self-Powered Organic Photodetectors with a Record Responsivity Enabled by Low Trap Density

High-performance IR organic photodetectors (OPDs) are of great significance for wireless optical communication, light detection and ranging (LiDAR) technology, and wearable electronics. However, high dark current and low responsivity (R) hinder their future commercial application. Herein, fullerene and non-fullerene acceptors-based OPDs are fabricated to understand the relationship between the trap density and photo-responsivity. Impressively, the non-fullerene system (Poly([2,6′-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]{3-fluoro-2[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PCE10):BTPV-4F-eC9) based OPDs exhibits a record R-value of 0.56 A W⁻¹ at 900 nm in no gain photodiode-type OPDs, which results in a high detectivity over 10¹³ Jones in 400–1030 nm at room temperature. Mechanistic studies show that the low trap density plays critical role in reducing the trap-assisted recombination and density of thermally generated carriers, thus improving the responsivity and reducing the dark current of the device. These findings provide new insights into the mechanism of high-performance self-powered near-infrared OPDs.     

Sn-Based Self-Powered Ultrafast Perovskite Photodetectors with Highly Crystalline Order for Flexible Imaging Applications

Sn-based perovskite materials are promising lead-free alternatives in thin film photodetectors (PDs) for applications such as optical communications, night visions and biomedical near-infrared imaging systems. However, constructing Sn-based photodetectors with high sensitivity, ultrafast response, and good operation stability has been a challenge. Herein, the phenyl-ethyl ammonium (PEA⁺) additive is introduced in pristine FASnI₃, which regulates the thin film growth, passivates the trap/defect states, prevents Sn²⁺/Sn⁴⁺oxidation, and releases the crystal strain. The Resulting FA_0.8PEA_0.2SnI₃ thin films exhibit highly crystalline order and flexibility. A self-powered PD using FA_0.8PEA_0.2SnI₃ as the active layer demonstrates excellent responsivity of 0.262 W⁻¹, detectivity of 2.3 × 10¹¹ Jones. And it possesses the fastest rise and decay time of 25 µs and 42 µs as compared with the state-of-art Sn-based perovskite PDs. The transient absorption spectroscopy analysis validates greatly reduced trapping states and defects of FASnI₃ with the PEA⁺ film for ultrafast response. A flexible Sn-based perovskite PD without any encapsulation in air continuously shows ultrafast responses after 10,000 bending cycles. Meanwhile, a flexible imaging system can be realized by a 5 × 5 PD array with good sensing results. This study shows great potential in nontoxic and ultrafast Sn-based perovskite PDs for flexible imaging applications.     

High-Performing Quasi-2D Perovskite Photodetectors with Efficient Charge Transport Network Built from Vertically Orientated and Evenly Distributed 3D-Like Phases

Quasi-two-dimensional (Q-2D) perovskites are emerging as one of the most promising materials for photodetectors. However, a significant challenge to Q-2D perovskites for photodetection is their insufficient charge transport ability, which is mainly attributed to their hybrid low-dimensional n-phase structure. This study demonstrates that evenly-distributed 3D-like phases with vertical orientation throughout the film can greatly facilitate charge transport and suppress charge recombination, outperforming the prevalent phase structure with a vertical dimension gradient. Based on such a phase structure, a Q-2D Ruddlesden−Popper perovskite self-powered photodetector achieving a combination of exceptional figures-of-merit is realized, including a responsivity of 0.45 AW⁻¹, a peak specific detectivity of 2.3 × 10¹³ Jones, a 156 dB linear dynamic range, and a rise/fall time of 2.89 µs/1.93 µs. The desired phase structure is obtained by utilizing a double-hole transport layer (HTL), combining hydrophobic PTAA and hydrophilic PEDOT: PSS. Besides, the dependence of the hybrid low-dimensional phase structure is also identified on the surface energy of the buried HTL substrate. This study gives insight into the correlation between Q-2D perovskites’ phase structure and performance, providing a valuable design guide for Q-2D perovskite-based photodetectors.     

Bidirectional and Dual-Mode Organic Photodetector Enables Secure Ultraviolet Communication

Traditional optical communication mode with single-band photodetector depicts terrible confidentiality and it depends on sophisticated cryptography schemes to obtain a secure communication process. Dual-band photodetectors have potential to realize a secure optical communication with a straightforward optical encryption strategy. However, previous reports of dual-band organic photodetectors (OPD) relied on the multi-stacked photosensitive layers thus there remain challenges in spectral matching and interfaces contacting. Here, a structurally simple bidirectional and UV–vis dual-band OPD is proposed, with single photosensitive layer sitting between electrodes. By elaborately regulating the optical field distribution and vertical phase segregation of the bulk heterojunction (BHJ), this OPD presents completely distinct spectral response ranges under bidirectional illuminations. Finally, this OPD outputs outstanding self-powered UV and vis dual-band responsivities (up to 30 and 50 mA W⁻¹) as the light illuminates from forward and backward direction, respectively. In addition, a stable and reliable optical communication system is realized based on this OPD where the UV response conveys valid information and further superimposes vis response for encryption. This design concept offers a simple alternative for achieving varied response windows and opens up a novel optical encryption method, which has potential be applied in a close-range private communication process.     

Woven Fibrous Photodetectors for Scalable UV Optical Communication Device

Fibrous photodetectors (FPDs) have attracted great interest in wearable and consumer electronics, which is a lightweight and flexible tools to achieve efficient light information transmission. However, there is a necessary compromise between high optoelectronic performance and high-level integration. Herein, a woven optoelectronic keyboard consisting of 40 PD button units is extended and integrated from four individual FPDs, with the integration level expanding by 1000%. Each FPD is based on uniform type-II TiO₂/Cs₃Cu₂I₅ heterojunction, which exhibits greatly reduced dark current by eight orders of magnitudes, large rectification ratio up to 33306@± 5V, high on–off ratio of 2.8 × 10⁴@−1 V and self-powered responsivity of 26.9 mA W⁻¹. The vacuum-deposited Cs₃Cu₂I₅ nanoparticles finely passivate the massive defects and serve as a p-type hole transport layer to improve hole transfer efficiency, which greatly promotes the radial transport and collection of photogenerated electrons. Moreover, the photocurrent remains highly stable after bending and twisting states. Intriguingly, the woven optoelectronic keyboards successfully realize logic AND/OR, further identifying the UV light signal as a keying text signal (“A–Z” letters, “0–9” numbers, and four punctuations). This work not only provides a scalable strategy to reduce device redundancy but also shows the great potential of fibrous photodetectors for wearable optical communication.     

Catalyst-Support Interactions in Zr2ON2-Supported IrOx Electrocatalysts to Break the Trade-Off Relationship Between the Activity and Stability in the Acidic Oxygen Evolution Reaction

The development of highly active and durable Ir-based electrocatalysts for the acidic oxygen evolution reaction (OER) is challenging because of the corrosive anodic conditions. Herein, IrO_x/Zr₂ON₂ electrocatalyst is demonstrated, employing Zr₂ON₂ as a support material, to overcome the trade-off between the activity and stability in the OER. Zr₂ON₂ is selected due to its excellent electrical conductivity and chemical stability, and the fact that it induces strong interactions with IrO_x catalysts. As a result, IrO_x/Zr₂ON₂ electrocatalysts exhibit outstanding OER performances, reaching an overpotential of 255 mV at 10 mA cm⁻² and a mass activity of 849 mA mg_Ir⁻¹ at 1.55 V (vs the reversible hydrogen electrode). The activity of IrO_x/Zr₂ON₂ is maintained at 10 mA cm⁻² for 5 h, while in contrast, IrO_x/ZrN and an unsupported IrO_x catalyst undergo drastic degradation. Combined experimental X-ray analyses and theoretical interpretations reveal that the reduced oxidation state of Ir and the extended Ir O bond distance in IrO_x/Zr₂ON₂ effectively increase the activity and stability of IrO_x by altering reaction pathway from a conventional adsorbate evolution mechanism to a lattice oxygen-participating mechanism. These results demonstrate that it is possible to effectively reduce the Ir content in OER catalysts through interface engineering without sacrificing the catalytic performance.     

Photoexcited Ultraviolet-to-Infrared (II) Pyroelectricity in a 2D Ferroelectric Perovskite Driving Broadband Self-Powered Photoactivities

Photoexcited pyroelectricity in ferroelectrics allows the direct conversion of light radiation into electric signal without external power source, thus paving an avenue to promote optoelectronic device performances. However, it is urgently demanded to exploit new ferroelectrics with this attribute covering ultraviolet (UV)-to-infrared (IR) region for self-powered photodetection. Herein, broadband light-induced pyroelectric effects in a new 2D perovskite-type ferroelectric, (BBA)2(EA)2Pb3Br10 (1; BBA = p-bromobenzylammonium, EA = ethylammonium), showing a high Curie temperature of 425 K and notable pyroelectric coefficient (≈5.4 × 10⁻³ µC cm⁻² K⁻¹) is presented. Especially, photo-induced change of its electric polarization leads to ultraviolet-to-infrared pyroelectricity in a wide spectral region (377–1950 nm). Broadband photoactivities actualized by this property break the limitation of its optical bandgap. Thus, single-crystal detectors of 1 are sensitive to UV-to-IR light with a small temperature fluctuation of 0.3 K, exhibiting a high transient responsivity up to ≈0.28 mA W⁻¹ and specific detectivity of 1.31 × 10¹⁰ Jones under zero bias (at 405 nm); such figure-of-merits are beyond than those self-powered photodetectors using oxide ferroelectrics. It is anticipated that the findings of light-induced pyroelectricity afford a feasible strategy to assemble newly-conceptual smart photoelectric devices, such as self-powered broadband detectors.     

Self-Driven WSe2/Bi2O2Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response

Benefiting from the superior electron mobility and good air-stability, the emerging layered bismuth oxyselenide (Bi₂O₂Se) nanosheet has received considerable attention with the promising prospects for electronics and optoelectronics applications. However, the high charge carrier concentration and bolometric effect of Bi₂O₂Se give rise to the high dark current and relatively slow photoresponse, which severely impede further improvement of the performance of Bi₂O₂Se based photodetectors. Here, a WSe₂/Bi₂O₂Se Van der Waals p-n heterostructure is reported with a pronounced rectification ratio of 10⁵ and a low reverse dark current of 10⁻¹¹ A, as well as an enhanced light on/off ratio up to 618 under 532 nm light illumination. The device also exhibits a fast response speed of 2.6 µs and a broadband detection capability from 365 to 2000 nm due to the efficient charge separation and strong interlayer coupling at the interface of the two flakes. Importantly, the built-in potential in the WSe₂/Bi₂O₂Se heterostructure offers a competitive self-powered photodetector with the light on/off ratio above 10⁵ and a photovoltaic responsivity of 284 mA W⁻¹. The WSe₂/Bi₂O₂Se heterostructure shows promising potentials for high-performance self-driven photodetector applications.     

Selective Growth of Type-II Weyl-Semimetal and Van der Waals Stacking for Sensitive Terahertz Photodetection

The emergence of novel topological semimetal materials, accompanied by exotic non-equilibrium properties, not only provides a fertile playground for a fundamental level of interest but also opens exciting opportunities for inventing new applications by making use of different light-induced effects such as nonlinear optics, optoelectronics, especially for the highly pursued terahertz (THz) technology due to the gapless electronic structures. Exploring type-II Weyl semimetal endowed with the richness of quantum wavefunction and peculiar band structure, underlie strong nonlinear coupling with THz waves. Here, the selective growth of type-II Weyl semimetal NbIrTe₄ by means of a self-flux approach is reported, which hosts strongly tilted Weyl cones and exotic Fermi arcs. The oscillating THz field induced by the antenna is engineered in terms of planar metal-topological semimetal-metal structure, along with van der Waals stacking, which allows for self-powered photodetection at room temperature. The results elucidate the superior performance of NbIrTe₄-graphene heterostructure-based photodetectors with responsivity up to 264.6 V W⁻¹ at 0.30 THz, fast response of 1 µs as well as low noise equivalent power ˂0.28 nW Hz^−0.5 is achieved, already exhibiting high-quality imaging at THz frequency. The results promise superb impacts in exploring topological Weyl semimetals for efficient low-energy photon harvesting.     

Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs

We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (~10 and~190 ms) and responsivity (~1.1×10⁵ A/W) were observed from detectors of the shortest gate length of 2 µm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.     

Efficient Ultrathin Self-Powered Organic Photodetector with Reduced Exciton Binding Energy and Auxiliary Föster Resonance Energy Transfer Processes

Recent advances in organic photodetectors (OPDs) have enabled high detectivity, high quantum efficiency, and fast response, due to their broad spectral response, easy processing, compatibility with flexible devices, and cooling-free operations. The advantages of combining ultrathin and self-powered OPDs are rarely explored, as technological limitations and lack of knowledge on the underlying mechanisms may lead to low light absorption efficiency and carrier recombination issues. Here, a modification layer-assisted approach is developed to construct ultrathin self-powered OPDs with enhanced sensitivity and ultrafast response time performance due to efficient exciton dissociation, energy transfer, and charge extraction processes. Specifically, this strategy enables a reduced exciton binding energy (42.4 meV) for efficient dissociation, as well as an increased dielectric constant of the photosensitive layer that shields undesirable lattice binding effects of photogenerated excitons. As a result, a remarkable device responsivity (0.45 A W⁻¹), improved response detectivity (1.25 × 10¹² Jones), and enhanced energy transfer efficiency (78.7%) are observed in the modified ultrathin organic photodetector. These findings illustrate a clear correlation between the exciton dissociation process, photogenerated exciton yields, and energy transfer channels, providing essential insight into the design of efficient ultrathin organic photodetectors.