Compositional and Morphological Studies of Polythiophene/Polyflorene Blends in Inverted Architecture Hybrid Solar Cells

This work investigates the composition and morphology of films of poly(3‐hexylthiophene) (P3HT), polyfluorene co‐polymer poly((9,9‐dioctylfluorene)‐2,7‐diyl‐alt‐[4,7‐bis(3‐hexylthien‐5‐yl)‐2,1,3‐benzothiadiazole]‐2′,2″‐diyl) (F8TBT) and blends thereof that are used in efficient all‐polymer solar cells. Ultraviolet photoemission spectroscopy (UPS) and X‐ray photoemission spectroscopy (XPS) studies on thin polymer and blend films on ZnO substrates reveal the existence of a 1–2 nm thick P3HT layer at the top surface of the blend films. XPS depth profiling studies reveal a density wave (λ ≈ 70 nm) originating from the air interface. As no preferential accumulation is observed at the bottom interface with ZnO, the composition at this interface is consistent with the original composition of the blend solution prior to spin‐coating. The morphology of this buried interface was studied by means of atomic force microscopy (AFM) and revealed that upon annealing the average domain size increases slightly (from 27 nm to 40 nm). It is observed that the photovoltaic performance of such inverted hybrid device improves upon annealing, however we believe this to mostly be a result of increased crystallinity in the P3HT domains leading to improved charge transport in the device, rather than changes in the blend phase separation.     

A New Approach to Model‐Based Simulation of Disordered Polymer Blend Solar Cells

The 3D nanomorphology of blends of two different (organic and inorganic) solid phases as used in bulk heterojunction solar cells is described by a spatial stochastic model. The model is fitted to 3D image data describing the photoactive layer of poly(3‐hexylthiophene)‐ZnO (P3HT‐ZnO) solar cells fabricated with varying spin‐coating velocities. A scenario analysis is performed where 3D morphologies are simulated for different spin‐coating velocities to elucidate the correlation between processing conditions, morphology, and efficiency of hybrid P3HT‐ZnO solar cells. The simulated morphologies are analyzed quantitatively in terms of structural and physical characteristics. It is found that there is a tendency for the morphology to coarsen with increasing spin‐coating velocity, creating larger domains of P3HT and ZnO. The impact of the spin‐coating velocity on the connectivity of the morphology and the existence of percolation pathways for charge carriers in the resulting films appears insignificant, but the quality of percolation pathways, considering the charge carrier mobility, strongly varies with the spin‐coating velocity, especially in the ZnO phase. Also, the exciton quenching efficiency decreases significantly for films deposited at large spin‐coating velocities. The stochastic simulation model investigated is compared to a simulated annealing model and is found to provide a better fit to the experimental data.     

High-performance polythiophene thin-film transistors with nematic liquid crystal modification

The influence of nematic liquid crystal molecules on the electrical properties and microstructure of polymer semiconductors poly(3-hexylthiophene) (P3HT) was investigated. It was found that the introduction of nematic liquid crystal molecules can significantly improve the performance of P3HT thin-film transistors, providing better electrical characteristics and enhanced mobility. The field-effect mobility of the device with liquid crystal modification can be enhanced by up to a factor of ten with respect to that of the pure P3HT device. UV–visible absorption spectroscopy, X-ray diffraction, and atomic force microscopy measurements show that the enhancement of charge-carrier mobility is achieved through a more highly organized morphology and a reduction in the density of traps presents in the P3HT/liquid crystal structure. The results shown here therefore illustrate a high-performance solution-processable thin-film transistors, which is quite feasible and can pave a key step for the practical applications of organic electronic devices.     

Lateral Inhomogeneity in the Electronic Structure of a Conjugated Poly(3‐hexylthiophene) Thin Film

How annealing influences the morphology of a highly regioregular poly(3‐hexylthiophene) (RR‐P3HT) film at the substrate interface as well as the lateral inhomogeneity in the electronic structure of the film are elucidated. Whereas previous studies have reported that high‐molecular‐weight (MW) RR‐P3HT films tend to show low crystallinity even after annealing, it is found that high‐MW RR‐P3HT does show high crystallinity after annealing at high temperature for a long time. Photoemission electron microscopy (PEEM), X‐ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy results clearly resolve a considerable lateral inhomogeneity in the morphology of RR‐P3HT film, which results in a variation of the electronic structure depending on the local crystallinity. The PEEM results show how annealing facilitates crystal growth in a high‐MW RR‐P3HT film.     

Synthesis,Morphology, and Properties of Poly(3‐hexylthiophene)‐block‐Poly(vinylphenyl oxadiazole) Donor–Acceptor Rod–Coil Block Copolymers and Their Memory Device Applications

Novel donor–acceptor rod–coil diblock copolymers of regioregular poly(3‐hexylthiophene) ( P3HT )‐block‐poly(2‐phenyl‐5‐(4‐vinylphenyl)‐1,3,4‐oxadiaz‐ole) ( POXD ) are successfully synthesized by the combination of a modified Grignard metathesis reaction ( GRIM ) and atom transfer radical polymerization ( ATRP ). The effects of the block ratios of the P3HT donor and POXD pendant acceptor blocks on the morphology, field effect transistor mobility, and memory device characteristics are explored. The TEM, SAXS, WAXS, and AFM results suggest that the coil block fraction significantly affects the chain packing of the P3HT block and depresses its crystallinity. The optical absorption spectra indicate that the intramolecular charge transfer between the main chain P3HT donor and the side chain POXD acceptor is relatively weak and the level of order of P3HT chains is reduced by the incorporation of the POXD acceptor. The field effect transistor (FET) hole mobility of the system exhibits a similar trend on the optical properties, which are also decreased with the reduced ordered P3HT crystallinity. The low‐lying highest occupied molecular orbital (HOMO) energy level (–6.08 eV) of POXD is employed as charge trap for the electrical switching memory devices. P3HT‐ b ‐POXD exhibits a non‐volatile bistable memory or insulator behavior depending on the P3HT / POXD block ratio and the resulting morphology. The ITO/ P3HT₄₄ ‐b‐ POXD₁₈ /Al memory device shows a non‐volatile switching characteristic with negative differential resistance (NDR) effect due to the charge trapped POXD block. These experimental results provide the new strategies for the design of donor‐acceptor rod‐coil block copolymers for controlling morphology and physical properties as well as advanced memory device applications.     

Rapid and Facile Formation of P3HT Organogels via Spin Coating: Tuning Functional Properties of Organic Electronic Thin Films

Poly(3‐hexyl thiophene) (P3HT) is widely regarded as the benchmark polymer when studying the physics of conjugated polymers used in organic electronic devices. P3HT can self‐assemble via π–π stacking of its backbone, leading to an assembly and growth of P3HT fibrils into 3D percolating organogels. These structures are capable of bridging the electrodes, providing multiple pathways for charge transport throughout the active layer. Here, a novel set of conditions is identified and discussed for P3HT organogel network formation via spin coating by monitoring the spin‐coating process from various solvents. The development of organogel formation is detected by in situ static light scattering, which measures both the thinning rate by reflectance and structural development in the film via off‐specular scattering during film formation. Optical microscopy and thermal annealing experiments provide ex situ confirmation of organogel fabrication. The role of solution characteristics, including solvent boiling point, P3HT solubility, and initial P3HT solution concentration on organogel formation, is examined to correlate these parameters to the rate of film formation, organogel‐onset concentration, and overall network size. The correlation of film properties to the fabrication parameters is also analyzed within the context of the hole mobility and density‐of‐states measured by impedance spectroscopy.     

Solvent‐Induced Morphology in Polymer‐Based Systems for Organic Photovoltaics

Studies on the influence of four different solvents on the morphology and photovoltaic performance of bulk‐heterojunction films made of poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C₆₁ butyric acid methyl ester (PCBM) via spin‐coating for photovoltaic applications are reported. Solvent‐dependent PCBM cluster formation and P3HT crystallization during thermal annealing are investigated with optical microscopy and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) and are found to be insufficient to explain the differences in device performance. A combination of atomic force microscopy (AFM), X‐ray reflectivity (XRR), and grazing‐incidence small‐angle X‐ray scattering (GISAXS) investigations results in detailed knowledge of the inner film morphology of P3HT:PCBM films. Vertical and lateral phase separation occurs during spin‐coating and annealing, depending on the solvent used. The findings are summarized in schematics and compared with the IV characteristics. The main influence on the photovoltaic performance arises from the vertical material composition and the existence of lateral phase separation fitting to the exciton diffusion length. Absorption and photoluminescence measurements complement the structural analysis.     

Correlating dilute solvent interactions to morphology and OPV device performance

Solvent additives have been explored as a reliable way to control the morphology in bulk-heterojunction (BHJ) layers for improved device performance. We show that the choice of solvent additives has direct implications on morphological evolution, i.e. poly(3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM) BHJ films processed with a small amount of 1,8-diiodooctane or 1-chloronaphthalene have more crystalline PCBM domains compared to crystalline P3HT domains, while the opposite is true for films cast with nitrobenzene additive and films cast purely from chlorobenzene. The BHJ film cross-links when annealed at 300 °C in the presence of 1,8-diiodooctane. Cross-linking is found to occur even in pristine P3HT and PCBM films annealed under similar conditions. NMR spectroscopy is presented as a viable technique for quantitative analysis of the amount of solvents left in the BHJ films before and after heat treatment. Despite differences in the ways the additives affect the morphology of the BHJ layer, device performance remained stable over 300 h for all additives tested.     

High‐Efficiency Organic Solar Cells Based on Preformed Poly(3‐hexylthiophene) Nanowires

Bulk heterojunction solar cells based on blends of poly(3‐hexylthiophene) (P3HT) and phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) are fabricated using self‐assembled P3HT nanowires in a marginal solvent without post‐treatments. The interconnected network structures of self‐organized P3HT nanowires create continuous percolation pathways through the active layer and contribute to enhanced carrier mobility. The morphology and photovoltaic properties are studied as a function of ageing time of the P3HT precursor solution. Optimal photovoltaic properties are found at 60 h ageing time, which increases both light absorption and charge balance. Multilayered solar cells with a compositionally graded structure are fabriacted using preformed P3HT nanowires by inserting a pure P3HT donor phase onto the hole‐collecting electrode. Applying optimized annealing conditions to the P3HT buffer layer achieves an enhanced hole mobility and a power conversion efficiency of 3.94%. The introduction of a compositionally graded device structure, which contains a P3HT‐only region, reduces charge recombination and electron injection to the indium tin oxide (ITO) electrode and enhances the device properties. These results demonstrate that preformed semiconductor nanowires and compositionally graded structures constitute a promising approach to the control of bulk heterojunction morphology and charge‐carrier mobility.     

Abrupt Morphology Change upon Thermal Annealing in Poly(3‐Hexylthiophene)/Soluble Fullerene Blend Films for Polymer Solar Cells

The in situ morphology change upon thermal annealing in bulk heterojunction blend films of regioregular poly(3‐hexylthiophene) (P3HT) and 1‐(3‐methoxycarbonyl)‐propyl‐1‐phenyl‐(6,6)C₆₁ (PCBM) is measured by a grazing incidence X‐ray diffraction (GIXD) method using a synchrotron radiation source. The results show that the film morphology—including the size and population of P3HT crystallites—abruptly changes at 140 °C between 5 and 30 min and is then stable up to 120 min. This trend is almost in good agreement with the performance change of polymer solar cells fabricated under the same conditions. The certain morphology change after 5 min annealing at 140 °C is assigned to the on‐going thermal transition of P3HT molecules in the presence of PCBM transition. Field‐emission scanning electron microscopy measurements show that the crack‐like surface of blend films becomes smaller after a very short annealing time, but does not change further with increasing annealing time. These findings indicate that the stability of P3HT:PCBM solar cells cannot be secured by short‐time annealing owing to the unsettled morphology, even though the resulting efficiency is high.     

Quantitative Analysis of Bulk Heterojunction Films Using Linear Absorption Spectroscopy and Solar Cell Performance

A fundamental understanding of the relationship between the bulk morphology and device performance is required for the further development of bulk heterojunction organic solar cells. Here, non‐optimized (chloroform cast) and nearly optimized (solvent‐annealed o‐dichlorobenzene cast) P3HT:PCBM blend films treated over a range of annealing temperatures are studied via optical and photovoltaic device measurements. Parameters related to the P3HT aggregate morphology in the blend are obtained through a recently established analytical model developed by F. C. Spano for the absorption of weakly interacting H‐aggregates. Thermally induced changes are related to the glass transition range of the blend. In the chloroform prepared devices, the improvement in device efficiency upon annealing within the glass transition range can be attributed to the growth of P3HT aggregates, an overall increase in the percentage of chain crystallinity, and a concurrent increase in the hole mobilities. Films treated above the glass transition range show an increase in efficiency and fill factor not only associated with the change in chain crystallinity, but also with a decrease in the energetic disorder. On the other hand, the properties of the P3HT phase in the solvent‐annealed o‐dichlorobenzene cast blends are almost indistinguishable from those of the corresponding pristine P3HT layer and are only weakly affected by thermal annealing. Apparently, slow drying of the blend allows the P3HT chains to crystallize into large domains with low degrees of intra‐ and interchain disorder. This morphology appears to be most favorable for the efficient generation and extraction of charges.     

Precise Structural Development and its Correlation to Function in Conjugated Polymer: Fullerene Thin Films by Controlled Solvent Annealing

The impact of controlled solvent vapor exposure on the morphology, structural evolution, and function of solvent‐processed poly(3‐hexylthiophene):[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (P3HT:PCBM) bilayers is presented. Grazing incident wide angle X‐ray scattering (GIWAXS) shows that the crystallization of P3HT increases with solvent exposure, while neutron reflectivity shows that P3HT simultaneously diffuses into PCBM, indicating that an initial bilayer structure evolves into a bulk heterojunction structure. Small angle neutron scattering (SANS) shows the agglomeration of PCBM and the formation of a PCBM pure phase when solvent annealing for 90 min. The structural evolution can be described as occurring in two stages: the first stage combines the enhanced crystallization of P3HT and diffusion of PCBM into P3HT, while the second stage entails the agglomeration of PCBM and formation of a PCBM pure phase. The phase separation of PCBM from P3HT is not driven by P3HT crystallinity, but is due to the concentration of PCBM exceeding the miscibility limit of PCBM in P3HT. Correlation of the morphology to photovoltaic activity shows that device performance significantly improves with solvent annealing for 90 min, indicating that both sufficient P3HT crystallization and formation of a PCBM pure phase are crucial in the optimization of the morphology of the active layer.     

Effect of Carbon Chain Length in the Substituent of PCBM‐like Molecules on Their Photovoltaic Properties

A series of [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM)‐like fullerene derivatives with the butyl chain in PCBM changing from 3 to 7 carbon atoms, respectively (F1–F5), are designed and synthesized to investigate the relationship between photovoltaic properties and the molecular structure of fullerene derivative acceptors. F2 with a butyl chain is PCBM itself for comparison. Electrochemical, optical, electron mobility, morphology, and photovoltaic properties of the molecules are characterized, and the effect of the alkyl chain length on their properties is investigated. Although there is little difference in the absorption spectra and LUMO energy levels of F1–F5, an interesting effect of the alkyl chain length on the photovoltaic properties is observed. For the polymer solar cells (PSCs) based on P3HT as donor and F1–F5, respectively, as acceptors, the photovoltaic behavior of the P3HT/F1 and P3HT/F4 systems are similar to or a little better than that of the P3HT/PCBM device with power conversion efficiencies (PCEs) above 3.5%, while the performances of P3HT/F3 and P3HT/F5‐based solar cells are poorer, with PCE values below 3.0%. The phenomenon is explained by the effect of the alkyl chain length on the absorption spectra, fluorescence quenching degree, electron mobility, and morphology of the P3HT/F1–F5 (1:1, w/w) blend films.     

Influence of Solvent Additive 1,8‐Octanedithiol on P3HT:PCBM Solar Cells

Processing solvent additives in polymer:fullerene bulk heterojunction systems are known as a promising method to enhance photovoltaic performance. It is generally agreed that solvent additives enable polymers to have a high degree of molecular order which increases the device performance. However, the understanding of the efficiency enhancement is not complete. There is a lack of insight regarding the quantitative determination of the molecular miscibility between polymer and fullerene as well as the inner morphology changes induced by the additives. In this work, understanding of the influence of the solvent additive 1,8‐octanedithiol (ODT) is provided on the classic system poly(3‐hexylthiophene‐2,5‐diyl):[6,6]‐phenyl‐C61 butyric acid methyl ester (P3HT:PCBM) films. The impact on polymer crystallinity, surface structure, inner morphology, and quantitative molecular miscibility of P3HT and PCBM is studied as a function of ODT volume concentration. The crystallinity is probed with absorption spectroscopy and grazing incidence wide‐angle X‐ray scattering. The morphology and miscibility are characterized via atomic force microscopy and time‐of‐flight grazing incidence small angle neutron scattering. Besides an increased crystallinity and prominent phase separation, ODT increases the solubility of PCBM in P3HT and reduces the size of amorphous P3HT domains. Moreover, solvent processing with a high ODT concentration alters the vertical material composition of the active layer.     

Performance improvement of low bandgap polymer bulk heterojunction solar cells by incorporating P3HT

This work demonstrates a significant improvement of device performance by incorporating the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) into a low bandgap polymer poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta [2,1-b:3,4-b′]dithiophene-siloe 2,6-diyl]] (Si-PCPDTBT) and [6,6]-phenyl C71 butyric acid methyl ester (PC₇₁BM) host system, to form a ternary blend bulk heterojunction solar cell. The P3HT concentration was varied from 1 to 5 wt% in the host system. P3HT functions as a morphology control agent in this ternary system. A small weight percentage of P3HT can enhance the light absorption, polymer phase separation, exciton separation and charge carrier mobilities. These results are supported by UV–vis spectroscopy, X-ray diffraction, photoluminescence analysis and other characterisation methods. The highest average power conversion efficiency improvement of 10% was achieved by adding 1 wt% P3HT to the host system. This study reveals a promising way to achieve high efficiency solar cells using a low bandgap polymer.     

激光处理Ni-P-Al2O3纳米化学复合镀层的微观组织

为了获得性能优良的镀层,在Fe-C合金表面制备了均匀的化学镀层,然后通过高功率连续CO2激光处理镀层表面,利用透射电子显微镜(TEM)观察了沉积Al2O3粒子的微观形貌,采用光学显微镜(OM)和扫描电子显微镜(SEM)观察了镀层处理前后表面及截面形貌,用X射线能谱仪(EDS)对处理前后的镀层进行了元素分析,用X射线衍射仪(XRD)进行物相分析,测试了处理前后镀层物相的变化,用微观硬度仪测量了激光处理后截面的硬度分布.结果表明,激光处理后,强化层表面平整光滑,与基体形成冶金结合,成分均匀,组织细密;处理层物相明显栽从镀态的非晶态向晶态转变,出现了Ni3P和其他一些非平衡强化相.截面处理层由表及里可分为四层:激光作用层、过渡层、热影响区(HAZ)以及基体.纳米Al2O3颗粒均匀分布在过渡区,激光处理层显微硬度约提高3倍,这主要是由于Al2O3颗粒的弥散强化作用以及生成新的强化相磷化物所致.     

Elaboration of P3HT/CNT/PCBM Composites for Organic Photovoltaic Cells

This Full Paper focuses on the preparation of single‐walled or multi‐walled carbon nanotube solutions with regioregular poly(3‐hexylthiophene) (P3HT) and a fullerene derivative 1‐(3‐methoxycarbonyl) propyl‐1‐phenyl[6,6]C₆₁ (PCBM) using a high dissolution and concentration method to exactly control the ratio of carbon nanotubes (CNTs) to the P3HT/PCBM mixture and disperse the CNTs homogeneously throughout the matrix. The CNT/P3HT/PCBM composites are deposed using a spin‐coating technique and characterized by absorption and fluorescence spectroscopy and by atomic force microscopy to underline the structure and the charge transfer between the CNTs and P3HT. The performance of photovoltaic devices obtained using these composites as a photoactive layer mainly show an increase of the short circuit current and a slight decrease of the open circuit voltage which generally leads to an improvement of the solar cell performances to an optimum CNT percentage. The best results are obtained with a P3HT/PCBM (1 : 1) mixture with 0.1 wt % multi‐walled carbon nanotubes with an open circuit voltage (V_oc) of 0.57 V, a current density at the short‐circuit (I_sc) of 9.3 mA cm^–2 and a fill factor of 38.4 %, which leads to a power conversion efficiency of 2.0 % (irradiance of 100 mW cm^–2 spectroscopically distributed following AM1.5).     

One‐Step Macroscopic Alignment of Conjugated Polymer Systems by Epitaxial Crystallization during Spin‐Coating

The one‐step preparation of highly anisotropic polymer semiconductor thin films directly from solution is demonstrated. The conjugated polymer poly(3‐hexylthiophene) (P3HT) as well as P3HT:fullerene bulk–heterojunction blends can be spin‐coated from a mixture of the crystallizable solvent 1,3,5‐trichlorobenzene (TCB) and a second carrier solvent such as chlorobenzene. Solidification is initiated by growth of macroscopic TCB spherulites followed by epitaxial crystallization of P3HT on TCB crystals. Subsequent sublimation of TCB leaves behind a replica of the original TCB spherulites. Thus, highly ordered thin films are obtained, which feature square‐centimeter‐sized domains that are composed of one spherulite‐like structure each. A combination of optical microscopy and polarized photoluminescence spectroscopy reveals radial alignment of the polymer backbone in case of P3HT, whereas P3HT:fullerene blends display a tangential orientation with respect to the center of spherulite‐like structures. Moreover, grazing‐incidence wide‐angle X‐ray scattering reveals an increased relative degree of crystallinity and predominantly flat‐on conformation of P3HT crystallites in the blend. The use of other processing methods such as dip‐coating is also feasible and offers uniaxial orientation of the macromolecule. Finally, the applicability of this method to a variety of other semi‐crystalline conjugated polymer systems is established. Those include other poly(3‐alkylthiophene)s, two polyfluorenes, the low band‐gap polymer PCPDTBT, a diketopyrrolopyrrole (DPP) small molecule as well as a number of polymer:fullerene and polymer:polymer blends.     

Effects of exciton blocking layer and cathode electrode work function on the performance of polymer solar cells

In this study the effects of some important processing and post-processing treatments on the performance of poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C₆₁-butyric acid methyl ester ([60]PCBM) solar cells were investigated. These parameters included the active layer film formation period, thermal annealing, electrical treatment, cathode work function modification, and exciton blocking layer type and thickness. Polymer bulk heterojunction solar cells having a glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/P3HT:PCBM/(Ca or LiF)/Al structure were fabricated. The morphology of the active layer was investigated using atomic force microscopy. The results showed that the morphology state of the active layer exactly after spin coating process was very important parameter, which could dictate different responses of solar cells to a certain treatment. Using solvent additives to prolong the film formation period and storing in small dish could reach the morphology of the active layer near its best state in which there was no need to apply common post-treatment processes. A thickness at about 20 nm was required for Ca layer to effectively act as exciton blocking layer while LiF with 1 nm thickness worked better.     

All-polymer phototransistors with bulk heterojunction sensing layers of thiophene-based electron-donating and thienopyrroledione-based electron-accepting polymers

All-polymer phototransistors consisting of bulk heterojunction (BHJ) nanolayers of electron-donating (p-type) and electron-accepting (n-type) polymers are attractive candidates for applications such as light-sensing and light-switching devices. Here, we report efficient green-light-sensing all-polymer phototransistors based on BHJ layers of poly(3-hexylthiophene) (P3HT) and poly[(4,8-bis(2-ethylhexyloxy)-benzo[1,2-b:4,5-b]-dithiophene)-2,6-diyl-alt-(N-2-ethylhexylthieno[3,4-c]pyrrole-4,6-dione)-2,6-diyl]] (PBDTTPD) polymers. To understand the phototransistor characteristics, all devices were exposed to a green monochromatic light (555 nm) with different incident power intensities. The results showed that the P3HT:PBDTTPD (80:20) layer are more advantageous than the pristine P3HT layers in terms of efficient charge separation and transport. The responsivity value of devices with the P3HT:PBDTTPD (80:20) layers reached 33.3 A/W, which is 25 and 28 times higher than those obtained with pristine the pristine P3HT or P3HT:PBDTTPD (60:40) layers. The enhanced device performance of the P3HT:PBDTTPD (80:20) phototransistors is attributable to an efficient charge separation, prevalent edge-on chain orientation, and relatively smoother surface morphology, which might facilitate improved charge transport in the lateral direction.