Mechanical properties of gradient and multilayered TiAlSiN hard coatings

Multicomponent coatings based on different metallic and non-metallic elements possess the combined benefit of individual components leading to further improvement of coating properties. In this study, monolayered Ti-Al-N, multilayered Ti-Al-N/TiN, gradient Ti-Al-Si-N, and multilayered Ti-Al-Si-N/TiN coatings were synthesized by using a cathodic-arc evaporation (CAE) system. In addition to Ti, Ti₃₃Al₆₇ and Al₈₈Si₁₂ cathodes were used for the deposition of Ti-Al-N, and Ti-Al-Si-N coatings, respectively. The gradient Ti_0.50Al_0.43Si_0.07N, and multilayered Ti_0.50Al_0.43Si_0.07N/TiN with nanograins separated by disordered grain boundaries possessed lower residual stress (− 2.8 ~ − 4.8 GPa) than that of monolayered Ti-Al-N (− 6.8 GPa) and multilayered Ti-Al-N/TiN coatings (− 5.7 GPa). The highest hardness was obtained for the gradient Ti_0.50Al_0.43Si_0.07N (38 ± 2 GPa) with Ti/(Ti + Al + Si) content ratio being 0.5. On the contrary, the multilayered Ti_0.50Al_0.43Si_0.07N/TiN possessed the highest H³/E^?2 ratio of 0.182 ± 0.003 GPa, indicating the best resistance to plastic deformation, among the studied coatings.     

Electro-codeposition of Al2O3-Y2O3 composite thin film coatings and their high-temperature oxidation resistance on γ-TiAl alloy

In this paper, electro-codeposition based on electrophoretic deposition and electrolytic deposition was developed to prepare Al₂O₃-Y₂O₃ composite thin film coatings on a γ-TiAl based alloy. Scanning electron microscope observations showed that the Al₂O₃-Y₂O₃ composite coatings were very compact and consisted of uniform nano-particles after microwave sintering. Cyclic oxidation at 900 °C indicated that the Al₂O₃-Y₂O₃ composite thin film coatings improved the oxidation and scale spallation resistance of the γ-TiAl alloy significantly. The superior oxidation and spallation resistance of the coatings were attributed to the suppression of outward diffusion of Ti and Al and inward diffusion of O, the promoted selective oxidation of Al in the γ-TiAl alloy, and the improved adhesion of oxide scale induced by the Al₂O₃-Y₂O₃ composite thin film coatings.     

High temperature oxidation behavior of Ti0.5Al0.5N coating and Ti0.5Al0.4Si0.1N coating

Good oxidation resistance of hard coatings is important for cutting tools. Ti_0.5Al_0.5N coating and Ti_0.5Al_0.4Si_0.1N coating were deposited by cathodic arc evaporation and their oxidation behavior at 850 °C, 900 °C and 1000 °C was compared. The effect of Si addition on the oxidation resistance of Ti_0.5Al_0.4Si_0.1N was investigated. Results show that the oxidation resistance of Ti_0.5Al_0.4Si_0.1N coating at 850-1000 °C is superior to Ti_0.5Al_0.5N coating. The improved oxidation resistance of Ti_0.5Al_0.4Si_0.1N coating can be ascribed to the combined action of Al₂O₃ and SiO₂ barrier layer, the reduction of columnar structure and the refinement of grains. In particular, Si addition increases the diffusion coefficient of Al and promotes the preferential formation of Al₂O₃ barrier layer.     

Microscale meshes of Ti3O5 nano- and microfibers prepared via annealing of C-doped TiO2 thin films

A new technique to produce microscale Ti₃O₅ nano- and microfiber meshes is proposed. When a 3 wt% carbon-doped TiO₂ film on Si(1 0 0) was annealed at 1000 °C in wet nitrogen (0.8%H₂O), the amorphous TiO₂ phase gave rise to crystalline phases of λ-Ti₃O₅ (75%) and rutile + trace of TiO_2−xC_x (25%). From Raman and FTIR Spectroscopy results, it was concluded that rutile is formed at the inner layer located at the interface between the mesh and the Si that was located away from the surface such that the meshes of nano- and microfibers are predominantly composed of Ti₃O₅ grown from the reaction of rutile with Si to form Ti₃O₅ and SiO₂. On the other hand, it was noteworthy that the microscale mesh of nano- and microfibers showed increased photoluminescence compared with amorphous TiO₂. The PL spectrum which had a broad band in the visible spectrum, fitted as three broad Gaussian distributions centered at 571.6 nm (∼2.2 eV), 623.0 nm (∼2.0 eV) and 661.9 nm (∼1.9 eV).     

Micro-hardness, microstructures and thermal stability of (Ti,Cr,Al,Si)N films deposited by cathodic arc method

(Ti,Cr,Al,Si)N films were deposited by cathodic arc method using TiCrAlSi alloy cathodes. It was found that the microstructures of (Ti,Cr,Al,Si)N were closely related to (Al+Si) content. The crystal structure of (Ti,Cr,Al,Si)N was NaCl-type structure up to the (Al+Si) content of 0.60, where it changed to a hexagonal structure. The maximum hardness of 33 GPa was obtained at the lowest (Al+Si) content of 0.56, still in the cubic structure. The micro-hardness decreased down to 28 GPa as the crystal structure changed from NaCl-type to wurtzite-type.To investigate the thermal stabilities of (Ti,Cr,Al,Si)N, the films were annealed in a vacuum furnace. In Ti_0.20Cr_0.20Al_0.55Si_0.05N with cubic structure, the phase segregation occurred by annealing at over 900 °C, while Ti_0.22Cr_0.22Al_0.44Si_0.12N remained in cubic phase up to 1000 °C. The micro-hardness of Ti_0.20Cr_0.20Al_0.55Si_0.05N increased and that of Ti_0.22Cr_0.22Al_0.44Si_0.12N decreased at 1000 °C. Ti_0.20Cr_0.11Al_0.58Si_0.11N with a cubic and hexagonal mixture phase held its (c,h)-mixture phase up to 1000 °C, while there was an indication of an increase both in micro-hardness and in cubic ratio after annealing.In this paper, the micro-hardness and microstructure of (Ti,Cr,Al,Si)N are discussed as a function of annealing temperature and investigated by X-ray diffraction and electron microscopy.     

Phase stability of SiC against Ti at high temperature

SiC to SiC were reacted by Ti foil at high temperature of 1673 K in vacuum. Ti reacted with SiC, and formed many reaction phases between SiC and Ti. At 1673 K SiC reacted at a reaction time of 0.5 ks or longer. From the SiC many reaction zones of Ti₃SiC₂, Ti₅Si₃C_X, Ti₅Si₃C_X + TiC, and TiC + Ti were formed. Ti binary compound of TiC and Ti ternary compounds of Ti₃SiC₂, and Ti₅Si₃C_X, were formed. The principle of the reaction zones was thermodynamically discussed by the corresponding chemical potential diagram.     

Dielectric properties of sol-gel derived high-k titanium silicate thin films

High-k dielectric titanium silicate (Ti_xSi_1 − xO₂) thin films have been deposited by means of an optimized sol-gel process. At the optimal firing temperature of 600 °C, the Ti_0.5Si_0.5O₂ films are shown to exhibit not only a dielectric constant (k) as high as ∼ 23 but more importantly the lowest leakage current and dielectric losses. Fourier transform infrared spectroscopy shows an absorbance peak at 930 cm^− 1, which is a clear signature of the formation of Ti-O-Si bondings in all the silicate films. The developed sol-gel process offers the required latitude to grow Ti_xSi_1 − xO₂ with any composition (x) in the whole 0 ≤ x ≤ 1 range. Thus, the k value of the Ti_xSi_1 − xO₂ films can be tuned at any value between that of SiO₂ (3.8) to that of TiO₂ (k ∼ 60) by simply controlling the TiO₂ content of the films. The composition dependence of the dielectric constant of the Ti_xSi_1 − xO₂ films is analyzed in the light of existing models for dielectric composites.     

Raman spectroscopy characterization of diamond films on steel substrates with titanium carbide arc-plated interlayer

Diamond chemical vapour deposition (CVD) on steel represents a difficult task. The major problem is represented by large diffusion of carbon into steel at CVD temperatures. This leads to very low diamond nucleation and degradation of steel microstructure and properties. Recent work [R. Polini, F. Pighetti Mantini, M. Braic, M. Amar, W. Ahmed, H. Taylor, Thin Solid Films 494 (2006) 116] demonstrated that well-adherent diamond films can be grown on high-speed steels by using a TiC interlayer deposited by the PVD-arc technique. The resulting multilayer (TiC/diamond) coating had a rough surface morphology due to the presence of droplets formed at the substrate surface during the reactive evaporation of TiC. In this work, we first present an extensive Raman investigation of 2 μm, 4 μm and 6 μm thick diamond films deposited by hot filament CVD on TiC interlayers obtained by the PVD-arc technique. The stress state of the diamond was dependent on both the films thickness and the spatial position of the coating on the substrate. In fact, on the top of TiC droplets, the stress state of the diamond was much lower than that of diamond in flatter substrate areas. These results showed that diamond films deposited on rough TiC interlayers exhibited a wide distribution of stress values and that very large compressive stress exists in the diamond film grown on flat regions of steel substrates with a TiC interlayer. Diamond films could accommodate stresses as large as 10 GPa without delamination.     

Oxidation of magnetron sputtered La-Si thin films for solide oxide fuel cell electronlytes

La-Si thin films were deposited on stainless steel substrates by magnetron sputtering from pure La and Si targets. The Si/(Si + La) atomic ratio in the films was varied from 43.2 to 59.3% by adjusting the discharge current on the La target. The films had a homogeneous chemical composition down to the substrate and sharp interfaces. Annealing the films in air at 1173 K promotes the formation of apatite-structure La_9.33Si₆O₂₆ and the diffusion of different species from the film to the substrate and vice-versa, resulting in broadening the interfaces. X-Ray diffraction showed that all the as-deposited films had an amorphous structure. The formation of the LaSi₂ phase at intermediate temperatures was observed for the films deposited with higher Si contents while the films deposited with lower Si contents remained amorphous up to the start of the apatite structure crystallization process. The lanthanum silicate apatite-like phase (La_9.33Si₆O₂₆) was obtained only after annealing at 1173 K, excepted for the film with the lower Si content which is already partially crystallized after annealing at 1073 K. Quite pure La_9.33Si₆O₂₆ was obtained only after annealing the film with the highest Si content (Si/(Si + La) = 59.3%) although the theoretical Si/(Si + La) atomic ratio for apatite structure lanthanum silicate is 39%. For the other films, La₂O₃ was always detected when the lanthanum silicate phase was formed. Both phenomena clearly resulted from the strong diffusion of silicon excess towards the stainless steel substrate.     

Synthesis of titanium carbide and TiC–SiO2 nanocomposite powder using rutile and Si by mechanically activated sintering

High-energy ball milling was applied with subsequent heat treatment for synthesizing nanoparticles of TiC powders by the carbothermic and carbosilisisothermic reduction of titanium oxide (rutile type). The milling procedure involved milling of TiO₂/C and TiO₂/Si/C powders at room temperature in an argon atmosphere. The progress of the mechanically induced solid state reaction was monitored using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results showed that TiC nanoparticles were duly synthesized in the TiO₂/C system at 1700 °C in 60-h milled samples. In the non-milled samples, although heated at the same temperature, only a minor amount of a lower degree of titanium oxide (Ti₃O₅) was observed to form. Further, in other non-milled samples, but with Si initially present, despite heating to 1550 °C no TiC phase was detected. However, using Si as a reducing agent accompanied by graphite, after 60 h ball milling, only Si remained as a distinguishable crystalline phase. Further, heat treatment of activated powders by forming the interphase compounds (such as Ti₃Si₅ and Ti₅Si₃) remarkably decreased the synthesis temperature to 900 °C for the 60 h milled samples.     

A study on the mechanochemical behavior of TiO2–Al–Si system to produce Ti5Si3–Al2O3 nanocomposite

In the present study Ti₅Si₃–Al₂O₃ nanocomposite was synthesized by a displacement reaction between Al and TiO₂ in ball milling of TiO₂, Al and Si powders. The effect of milling time and heat treatment temperatures were also investigated. The structural changes of powder particles during mechanical alloying were investigated by X-ray diffraction (XRD). Morphology and microstructure of powders were characterized by scanning electron microscopy (SEM). It was found that after 10 h of MA, the reaction between Al and TiO₂ initiated in a gradual mode and after about 45 h of milling, the reaction was successfully completed. The final product consisted of Ti₅Si₃ intermetallic compound with a crystallite size of 13 nm and amorphous Al₂O₃. Heat treatment of this structure at 1050 °C led to the crystallization of Al₂O₃ and ordering of Ti₅Si₃. The crystallite size of Ti₅Si₃ and Al₂O₃ after annealing at 1050 °C for 1 h remained in nanometer scale. So the final product appeared to be stable upon annealing.     

Mechanical properties and microstructure of Al2O3/TiAl in situ composites doped with Cr2O3

Al₂O₃/TiAl composites were successfully fabricated from powder mixtures of Ti, Al, TiO₂ and Cr₂O₃ by a hot-press-assisted exothermic dispersion method. The effect of the Cr₂O₃ addition on the microstructures and mechanical properties of Al₂O₃/TiAl composites was characterized, and the results showed that the Rockwell hardness, flexural strength and fracture toughness of the composites increased as the Cr₂O₃ content increased. When the Cr₂O₃ content was 2.5 wt%, the flexural strength and the fracture toughness attained peak values of 925 MPa and 8.55 MPa m^1/2, respectively. This improvement of mechanical properties was due to the more homogeneous and finer microstructure developed from the addition of Cr₂O₃ and an increase in the ratio of α₂-Ti₃Al to γ-TiAl matrix phases.     

Synthesis of Al-Cr-O-N thin films in corundum and f.c.c. structure by reactive r.f. magnetron sputtering

Advanced PVD coatings for metal cutting applications must exhibit a multifunctional property profile including high hardness, chemical inertness and high temperature stability. Recently, ternary Al-Cr-O thin films with mechanical properties similar or superior to conventional aluminium oxide thin films have been suggested as potential materials meeting such demands. These coatings can be deposited at moderate temperatures in PVD processes. In this work, new quaternary Al-Cr-O-N coatings are suggested as alternative for offering thin film materials of high strength, hardness and even toughness. A combinatorial approach to the synthesis of Al-Cr-O-N thin films by means of reactive r.f. magnetron sputtering is presented. A thorough phase analysis of deposited coatings covering a wide range of elemental compositions revealed a well-defined phase transition from a corundum-type α-(Al_1 − x,Cr_x)_2 + δ(O_1 − y,N_y)₃ structure to a CrN-type f.c.c.-(Al_1 − x,Cr_x)_1 + θ(O_1 − y,N_y) structure as a function of the Al/Cr ratio and the nitrogen gas flow ratio. Detailed results on the coatings composition, constitution and microstructure are discussed compared to ternary Al-Cr-O thin films deposited by reactive r.f. magnetron sputtering under nearly identical conditions.     

Effect of CeO2 on the microstructure and isothermal oxidation of Ni-Al alloy coatings transformed from electrodeposited Ni-Al films at 800 °C

The electrodeposited two-phase γ-Ni + γ′-Ni₃Al and single-phase γ′-Ni₃Al coatings with and without CeO₂ particles were developed by the conversion of electrodeposited Ni-Al or Ni-Al-CeO₂ films with dispersed Al microparticles in Ni matrix into γ′-Ni₃Al by vacuum annealing at 800 °C for 3 h. SEM/EDAX and TEM characterizations showed that the CeO₂-dispersed γ-Ni + γ′-Ni₃Al or γ′-Ni₃Al coatings exhibited finer grains compared to the CeO₂-free Ni-Al alloy coatings. The oxidation at 1000 °C for 20 h showed that for a given Al content the addition of CeO₂ significantly improved the oxidation resistance of the electrodeposited Ni-Al alloy coatings. The effect of CeO₂ particles on the microstructure and oxidation behavior of the electrodeposited Ni-Al alloy coating is discussed in detail.     

Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer layer

Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ antiferroelectric thin films with thickness of 500 nm were successfully deposited on TiO₂ buffered Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) and Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates via sol-gel process. Microstructure of Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ thin films was studied by X-ray diffraction analyses. The antiferroelectric nature of the Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ thin films was confirmed by the double hysteresis behaviors of polarization and double buffer fly response of dielectric constant versus applied voltage at room temperature. The capacitance-voltage behaviors of the Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ films with and without TiO₂ buffer layer were studied, as a function of temperature. The temperature dependence of dielectric constant displayed a similar behavior and the Curie temperature (T_c) was 193 °C for films on both substrates. The current caused by the polarization and depolarization of polar in the Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ films was detected by current density-electric field measurement.     

Properties of polyimide/Al2O3 and Si3N4 deposited thin films

Polyimide (PI) nanocomposites with different proportions of Al₂O₃ were prepared via two-step reaction. Silicon nitride (Si₃N₄) was deposited on PI composite films by a RF magnetron sputtering system and used as a gas barrier to investigate the water vapor transmission rate (WVTR). The thermal stability and mechanical properties of a pure PI film can be improved obviously by adding adequate content of Al₂O₃. At lower sputtering pressure (4 mTorr), the PI/Al₂O₃ hybrid film deposited with Si₃N₄ barrier film exhibits denser structure and lower root mean square (RMS) surface roughness (0.494 nm) as well as performs better in preventing the transmission of water vapor. The lowest WVTR value was obtained from the sample, 4 wt.%Al₂O₃-PI hybrid film deposited with Si₃N₄ barrier film with the thickness of 100 nm, before and after bending test. The interface bonding, Al-N and Al-O-Si, was confirmed with the XPS composition-depth profile.     

Effect of Si3N4-particles addition in Ag-Cu-Ti filler alloy on Si3N4/TiAl brazed joint

A novel composite filler alloy was developed by introducing Si₃N_4p (p = particles) into Ag-Cu-Ti filler alloy. The brazing of Si₃N₄ ceramics and TiAl intermetallics was carried out using this composite filler alloy. The typical interfacial microstructure of brazed joints was: TiAl/AlCu₂Ti reaction layer/Ag_(s,s) + Al₄Cu₉ + Ti₅Si_3p + TiN_p/TiN + Ti₅Si₃ reaction layer/Si₃N₄. Effects of Si₃N_4p content in composite filler alloy on the interfacial microstructure and joining properties were investigated. The distribution of Ti₅Si_3p and TiN_p compounds in Ag-based solid solution led to the decrease of the mismatch of the coefficient of thermal expansion (CTE) and the Young's modulus between Si₃N₄ and TiAl substrate. The maximum shear strength of 115 MPa was obtained when 3 wt.% Si₃N_4p was added in the composite filler alloy. The fracture analysis showed that the addition of Si₃N_4p could improve the mechanical properties of the joint.     

Deposition and characterization of TiAlN/Si3N4 superhard nanocomposite coatings prepared by reactive direct current unbalanced magnetron sputtering

Superhard nanocomposite coatings of TiAlN/Si₃N₄ with varying silicon contents were synthesized using reactive direct current (DC) unbalanced magnetron sputtering. The Si and TiAl targets were sputtered using an asymmetric bipolar-pulsed DC power supply and a DC power supply, respectively, in Ar+N₂ plasma. The structural and mechanical properties of the coatings were characterized using X-ray diffraction (XRD) and nanoindentation techniques, respectively. The elemental composition of the TiAlN/Si₃N₄ nanocomposite coatings was determined using energy-dispersive X-ray analysis and the bonding structure was characterized by X-ray photoelectron spectroscopy. The surface morphology of the coatings was studied using atomic force microscopy. The XRD data showed that the nanocomposite coatings exhibited (1 1 1) and (2 0 0) reflections of cubic TiAlN phase. The broadening of the diffraction peaks with an increase in the silicon content in the nanocomposite coatings, suggested a decrease in the average crystallite size. The TiAlN/Si₃N₄ nanocomposite coatings exhibited a maximum hardness of 43 GPa and an elastic modulus of 350 GPa at a silicon concentration of approximately 11 at%. The hardness and the elastic modulus of the nanocomposite coatings decreased significantly at higher silicon contents. Micro-Raman spectroscopy was used to characterize the structural changes as a result of heating of the nanocomposite coatings in air (400-850 °C) and in vacuum (900 °C). The Raman data of the nanocomposite coatings annealed in air and vacuum showed better thermal stability as compared to that of the TiAlN coatings. Similarly, the nanocomposite coatings deposited on mild steel substrates exhibited improved corrosion resistance.     

Structural evaluation of sol-gel derived lead strontium titanate diffusion barrier for integration in lead zirconate titanate transducer design

Sol-gel derived Pb₄₀Sr₆₀TiO₃ (PST) thin film has been investigated as a diffusion barrier for integrating in PbZr₃₀Ti₇₀O₃ (PZT) device structures on Si substrates. PST film was deposited on SiO₂/Si substrate and annealed at a relatively low temperature range of 550-600 °C producing a crack-free, smooth and textured surface. Following deposition on PST/SiO₂/Si template PZT thin film was crystallised exhibiting random grain orientations and an insertion of the bottom Pt/Ti electrode forming PZT/Pt/Ti/PST/SiO₂/Si stacks promoted the preferred PZT (111) perovskite phase. PZT (111) peak intensity gradually decreased along with slight increase of the PZT (110) peak with increasing annealing temperature of the buffer PST film. The dielectric and ferroelectric properties of the PZT with barrier PST deposited at 550 °C were assessed. The dielectric constant and loss factor were estimated as 390 and 0.034 at 100 kHz respectively and the remnant polarisation was 28 µC/cm² at 19 V. The performance of the PZT/PST device structures was compared to similar PZT transducer stacks having widely used barrier TiO₂ layer.     

Pulsed plasma treatment of Ti-Al coatings produced by mechanical alloying method

By means of the mechanical alloying method (MA), Ti-Al coatings were deposited on Ti substrates. Then, as-synthesized coatings were treated by pulsed argon plasma with energy up to 185 J/cm². Irradiation of the Ti-Al MA-coating with pulsed argon plasma beams with energy density higher than 135 J/cm² resulted in melting of the near-surface layer that in turn initiated the liquid-phase reaction between Ti and Al to form the Al₃Ti compound. Melting led to smoothing of the coating structure. The coating microstructure and volume fraction of Al₃Ti phase was conditioned by plasma energy. The thickness of the modified layer was several microns. Phase composition of plasma-treated coatings depended on its element composition. The plasma treatment of the Ti-Al-Si-C and Ti-Al-W-C coatings with energy of 150 J/cm² led to formation of Ti₅Si₃ and TiC along with Al₃Ti compound.