In0.14Ga0.86As/GaAs（4×3）表面的RHEED及STM分析

以在UHV/MBE-STM联合系统上生长的19ML的InGaAs/GaAs样品为研究对象,先在GaAs(001)衬底上外延生长0.37μm的GaAs缓冲层,再外延生长19ML的InGaAs,通过样品生长速率大致确定其组分为In0.14Ga0.86As,通过反射式高能电子衍射(RHEED)及扫描隧道显微镜分析发现其表面主要由占大多数的4×3及少量的α2(2×4)重构混合而成,并用软件模拟RHEED对实验结果进行了验证。     

RHEED实时监控下MBE生长不同In组分的InGaAs薄膜

利用分子束外延技术,通过RHEED图像演变实时监控薄膜生长状况,采用RHEED强度振荡测量薄膜生长速率,固定Ga源温度、改变In源温度在GaAs（001）基片上外延生长了不同In组分（39%、29%、19%）的InGaAs薄膜。比较RHEED强度振荡以及RHEED衍射图像,发现随着In组分的增加In-GaAs的生长将很快进入三维粗糙表面生长模式,并指出In0.19Ga0.81As和In0.29Ga0.71As薄膜处于（2×3）表面重构相。In0.19Ga0.81As样品进行退火处理后完成STM扫描分析,证实样品为表面原子级平整的In-GaAs薄膜。     

InGaAs/GaAs异质薄膜的MBE生长研究

利用分子束外延技术,在GaAs(001)基片上外延InGaAs/GaAs异质薄膜,通过RHEED图像演变实时监控薄膜生长状况,采用RHEED强度振荡测量薄膜生长速率,确定薄膜中In/Ga的组分比,并提出控制InGaAs薄膜中In/Ga组分比的生长方法.根据RHEED图像,指出获得的InGaAs薄膜处于(2×3)表面重构...     

InAs(001)表面金属化的转变

论述了利用分子束外延方法在InAs(001)基片上生长InAs时,样品表面由富As的(2×4)向富In的(4×2)转变的现象。通过控制生长参数生长出了较好的富As(2×4)表面。在As压不足的情况下,轻微的提升样品衬底温度,样品表面逐渐转向富In表面的(4×2)结构,呈现出(3×1)混合相。通过实验分析及软件模拟确定表面(4×2)结构区域已覆盖多达90%,表明样品表面大部分已金属化。     

MBE生长GaAs(001)薄膜表面的Ostwald熟化过程研究

采用带有RHEED的MBE技术,利用RHEED图像演变实时监控薄膜生长状况,通过RHEED强度振荡测算薄膜生长速率,在GaAs(001)基片上同质外延GaAs薄膜。利用STM对MBE生长的GaAs薄膜表面的熟化过程进行了深入研究。研究发现,随着退火时间的延长,刚完成生长的GaAs表面从具有大量岛和坑的粗糙表面逐渐熟化,在熟化过程中岛不断合并扩大并与平台结合,而坑却逐渐消失。指出当熟化过程完成后GaAs表面将进入原子级平坦状态,并详细解释了熟化过程GaAs表面各种形貌特征形成的内在原因。     

硅碳比对Si(111)表面SSMBE异质外延SiC薄膜的影响

利用固源分子束外延(SSMBE)生长技术, 在不同的硅碳蒸发速率比(Si/C)条件下, 在Si(111)衬底上生长SiC单晶薄膜. 利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品形貌和结构进行了研究. 结果表明, 在Si/C比(1.1:1.0)下生长的薄膜样品, XRDω扫描得到半高宽为2.1°; RHEED结果表明薄膜具有微弱的衍射环, 有孪晶斑点. 在Si/C比(2.3:1.0)下生长的薄膜, XRDω扫描得到的半高宽为1.5°, RHEED显示具有Si的斑点和SiC的孪晶斑点. AFM显示在这两个Si/C比下生长的样品表面都有孔洞或者凹坑, 表面比较粗糙. 从红外光谱得出 薄膜存在着比较大的应力. 但在Si/C比(1.5:1.0)下生长的薄膜样品, XRDω 扫描得到的半高宽仅为1.1°; RHEED显示出清晰的SiC的衍射条纹, 并可看到SiC的3×3表面重构, 无孪晶斑点; AFM图像表明, 没有明显的空洞, 表面比较平整. FTIR谱的位置显示, 在此Si/C比下生长的薄膜内应力比较小. 因此可以认为, 存在着一个优化的Si/C比(1.5:1.0), 在这个Si/C比下, 生长的薄膜质量较好.     

In0.53Ga0.47As/InP(001)薄膜表面重构的研究

通过扫描隧道显微镜(STM)以及反射式高能电子衍射(RHEED)对在不同As4等效束流压强(As4BEP)下生长的In0.53 Ga0.47 As薄膜表面重构进行研究.研究发现在两种As4 BEP条件下,样品表面重构都以(4×3)/(n×3)为主,并存在c(6×4)、β2(2×4)以及α2(2×4)三种重构类型.和低As4 BEP条件相比,高As4 BEP条件下反射式高能电子衍射仪图像更加清晰,高分辨率的STM扫描图片也能够分辨出各种重构类型.对高分辨率的STM扫描图像进行进一步分析得到,随着As4 BEP的升高,β2(2×4)重构类型明显减少,这是由于高As4 BEP减少In偏析,从而抑制β2(2×4)重构的产生.     

InAs沉积量对InAs/GaAs量子点表面形貌的影响

基于分子束外延(MBE)技术,以反射式高能电子衍射仪(RHEED)作为实时监测工具,在经过Ga液滴刻蚀而具有纳米洞的GaAs衬底上沉积不同厚度的InAs材料形成量子点,并利用扫描隧道显微镜(STM)研究了量子点的形成及分布与InAs沉积量之间的关系。结果表明,在GaAs衬底平坦区,InAs按照SK模式生长,在纳米洞位置,洞内及其周围的台阶会约束量子点的生长成核,而随着InAs沉积量的增加,这种约束会逐渐减小。特别是当InAs沉积量为2ML时,在纳米洞周围会形成尺寸均匀、分布有序且呈环状的量子点结构。     

不同应力下的InxGa1-xAs薄膜表面形貌

利用分子束外延技术,通过反射式高能电子衍射仪实时监控InGaAs薄膜生长状况,在InAs(001)基片上生长In0.86Ga0.14As,在GaAs(001)基片上生长In0.14Ga0.86As(厚度均为20原子层)单晶薄膜。采用扫描隧道显微镜对原位退火后的InGaAs样品进行扫描,发现不同组分的InGaAs呈现不同的表面形貌。虽然生长的初始表面都是原子级平坦,但是由于晶格常数差异触发不同类型的表面应力,促使In0.14Ga0.86As/GaAs薄膜中台阶边缘平滑扭曲,而在In0.86Ga0.14As/InAs薄膜表面台阶却呈锯齿状;同时,由于不同类型表面应力的作用,低In组分薄膜形成更多的二维(2D)岛。     

在RHEED实时监控下GaAs晶体生长研究

采用分子束外延技术,利用RHEED图像可研究GaAs表面重构方式和生长机制。报道了一种新型的分子束外延方法,在RHEED实时监控下,利用GaAs(001)基片同质外延GaAs。通过改变生长和退火的时间与温度(420、500、580℃),结合RHEED图像演变与GaAs表面平整度(粗糙化)的联系,得到表面原子级平整的GaAs样品。完成生长后对样品做EDS分析,确定样品为高纯度GaAs。利用这种方法,得到厚度约为4μm砷化镓晶体。     

热交换器的分类及优缺点分析

热交换器是将不同温度介质之间的热量通过热传导的形式,由高温介质传递给低温介质,使介质达到生产所需温度的工艺设备,也可作为一种节能设备使用.通过对不同热交换器的结构分析,总结不同热交换器的优缺点、适用环境,为生产工艺设计人员及设备制造单位在选择可降低能耗、提高效率的设备上提供参考.     

聚苯胺及其复合物的制备和结构及形貌分析

通过化学氧化法分别制备盐酸,盐酸和十二烷基苯磺酸,碳纳米管(MWNTs-COOH)掺杂的聚苯胺,利用红外光谱,紫外光谱,扫描电子显微镜和透射电子显微镜对所制备聚苯胺的结构和形貌进行分析。分析不同掺杂物对聚苯胺的结构和形貌的影响;同时研究了超声波作用对聚苯胺形貌以及聚苯胺包裹MWNTs-COOH情况的影响。     

Thermodynamic similarity and prediction of the properties and characteristics of substances and processes

Principles of the theory of thermodynamic similarity are considered in application to all aggregate states of a substance, including phase transitions, and to the change in dissipative structures in open systems.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 5, pp. 709–716, November, 1987.     

Modelling and computation of curing and damage of thermosets

The curing of thermosets is a complex process involving the transition from a fluid into a (visco-) elastic solid. This phase transition comes along with an increase in stiffness and a volume shrinkage of the polymer. The latter may lead to severe residual strains and stresses, which in turn can cause damage in the final, usually quasi-brittle material. In this contribution a constitutive model is developed which takes into account the curing of a thermosetting material together with the process-induced damage as resulting from curing shrinkage. The curing of the material is governed by a phenomenological hypoelastic constitutive equation which includes temporal evolutions for stiffness and volume shrinkage. Thermal and viscous effects are neglected in the present study. An isotropic gradient-enhanced damage model is adapted to describe the damage evolution. The curing-damage model is implemented into a finite element code and numerical examples for thermosetting materials demonstrate that the proposed model is capable to predict cure-induced damage in thermosets.     

Mechanisms of Corosion and Oxidation of Metals and Alloys

Selected topics in field of the study of the mechanisms of corrosion and of oxidation of metals or alloys are presented. The first part reports a new model for the mechanism of the breakaway oxidation of ferritic stainless steels in water vapour. The second part is devoted to the physico‐chemical aspects of oxidation and presents experimental methods useful in the kinetic modelling applied to two alloys, the zircalloy‐4 and an AlMg5 % in the liquid state. In the third part the physical and numerical modelling of the stress corrosion cracking behaviour in face‐centered cubic (fcc) alloys is detailed, which enables the study of the influence of macroscopic parameters (such as the temperature or hydrogen activity) on the fracture process.     

碳化硼陶瓷增韧补强和致密化研究现状及其展望

碳化硼陶瓷具有极高的硬度,然而其低韧性、低抗弯强度、难以致密化限制了它的广泛应用.已有一些研究集中于碳化硼陶瓷增韧补强和致密化,对这一方面国内外研究进展进行了归纳与评述,阐明各种增韧补强和致密化方法的优缺点,提出碳化硼陶瓷增韧补强和致密化研究值得发展的一些方向.     

Measurement and analysis of elastic and anelastic properties of alumina and silicon carbide

Measurements of dynamic Young's modulus, E, and damping as a function of temperature, T, were made for alumina and silicon carbide. The Young's modulus data were compared with some from the literature, and analysed in terms of a theoretical framework relating the Debye temperature, θD, with the elastic constants. For both materials this analysis yielded a ratio T₀/θ_D which was near 0.4, where T₀ is an empirical fitting constant for the plot of (E(0)−E)/T versus 1/T (E(0) is the value of E at 0 K). The analysis of the damping data in terms of an Arrhenius type dependence led to effective activation energies near kT, where k is Boltzmann's constant. This revised version was published online in November 2006 with corrections to the Cover Date.     

Preparation and characterization of phosphate and arsenate apatites of strontium and their solid solutions

Samples of phosphate and arsenate apatites of strontium and six of their solid solutions, spread over the entire compositional range, were prepared by a wet method. They were characterized by chemical, X-ray, electron microscopic and infrared analyses. The validity of Vegard's law established the homogeneity of the solid solutions.     

检定和校准证书的异同与应用

本文介绍了检定和校准以及证书的两点相同、五点不同之处,说明了对检定证书和校准证书的正确应用。