CW room-temperature visible single quantum well Ga0.73Al0.27As diode lasers grown by metalorganic chemical vapour deposition

Room-temperature CW laser operation at 7125 ? has been achieved in a (Ga1?xAlxAs, x?0.27) single quantum well double heterostructure (SQW-DH) diode laser. The laser consists of a 9 ?m-wide delineated shallow proton stripe. The pulsed threshold current for a 250 ?m long device is 115 mA whereas the CW threshold current is 140 mA. The CW external differential quantum efficiency is 60%.     

High-power 1.06 mu m GaInAsP DCPBH lasers

High-power 1.06 mu m double channel planar buried-heterostructure (DCPBH) lasers have been fabricated by liquid-phase epitaxy. AT 20 degrees C, the threshold current is 80 mA and CW output powers of 20 mW can be obtained. Under pulsed operation, quantum efficiencies of 0.37 W/A per facet and maximum pulse output powers of 150 mW are realised, while maintaining the lowest-order spatial mode and a symmetrical far-field distribution.<>     

High-power etched-facet lasers

We demonstrate, for the first time, laser diodes with anetched facet fabricated by chemically assisted ion beametching, producing 1?7 W pulsed and 470mW CW output power from one facet. The devices were coated and bonded junction-side-up and tested at room temperature. The single 40 ?m stripe, 300 ?m-long devices exhibit 94 mA threshold current and differential quantum efficiencies of 80% pulsed (78% CW).     

Highly efficient single-longitudinal-mode operation of antireflection-coated 1.3 ?m DFB-DC-PBH LD

Lasing characteristics for a 1.3 ?m InGaAsP/InP distributed-feedback double-channel planar buried-heterostructure laser diode (DFB-DC-PBH LD) have been remarkably improved by antireflection (AR) coating applied on the front facet. CW single-longitudinal-mode (SLM) operation power as high as 55 mW, and differential quantum efficiency as high as 36%, have been obtained from the coated front facet. CW SLM operation has been achieved up to 105°C.     

High-power operation of a transverse-mode stabilised AlGaInp visible light (?L = 683 nm) semiconductor laser

Continuous-wave (CW), stable fundamental-mode operation, up to 20 mW, was achieved with transverse-mode stabilised MOVPE-grown AlGaInP visible-light (?L = 683 nm) lasers. The CW threshold current was 67 mA and the external quantum efficiency was 41%. Up to 27 mW CW power was obtained from this laser diode.     

High-temperature(T = 80℃) operation of a 2μm InGaSb-AlGaAsSb quantum well laser

正An InGaSb/AIGaAsSb compressively strained quantum well laser emitting at 2μm has been fabricated. An output power of 82.2 mW was obtained in continuous wave(CW) mode at room temperature.The laser can operate at high temperature(T = 80℃),with a maximum output power of 63.7 mW in CW mode.     

High-temperature (T=80℃) operation of a 2 &#956;m InGaSb-AlGaAsSb quantum well laser

An InGaSb/AlGaAsSb compressively strained quantum well laser emitting at 2 μm has been fabricated. An output power of 82.2 mW was obtained in continuous wave (CW) mode at room temperature. The laser can operate at high temperature (T=80℃), with a maximum output power of 63.7 mW in CW mode.     

Room temperature continuous wave operation of quantum cascade laser at λ～ 9.4μm

Continuous wave (CW) operation of long wave infrared (LWIR) quantum cascade lasers (QCLs) is achieved up to a temperature of 303 K.For room temperature CW operation,the wafer with 35 stages was processed into buried heterostructure lasers.For a 2-mm-long and 10-μm-wide laser with high-reflectivity (HR) coating on the rear facet,CW output power of 45 mW at 283 K and 9 mW at 303 K is obtained.The lasing wavelength is around 9.4μm locating in the LWIR spectrum range.     

High output power single longitudinal mode graded index separateconfinement multiple quantum well InGaAs/InP distributed feedback (GRINSCH MQW DFB) lasers

A high continuous-wave (CW) output and high quantum efficiency of 1.5 μm-wavelength InGaAs/InP graded-index separate-confinement multiple-quantum-well DFB lasers were demonstrated. A threshold current of 45 mA with a maximum output power close to 100 mW and a quantum efficiency of 0.33 mW/mA was obtained. Single-frequency light output with power as high as 16 dBm (40 mW) was launched into a single-mode fiber     

High-power operation of index-guided inverted channel substrate planar (ICSP) lasers

An easily fabricated high-power index-guided laser, the inverted channel substrate planar (ICSP) structure, has been developed using the two-step metal-organic chemical vapour deposition (MOCVD) technique. Linear output power characteristics were observed to 30 mW CW on submount with junction side up without facet coatings. The device operated in a stable single mode to a power >25 mW. Improved ICSP lasers with facet coatings demonstrate a stable high output power of 65 mW CW and a differential quantum efficiency of 60%.     

High temperature, high power InGaAs/GaAs quantum-well lasers withlattice-matched InGaP cladding layers

The authors report the high-temperature and high-power operation of strained-layer InGaAs/GaAs quantum well lasers with lattice-matched InGaP cladding layers grown by gas-source molecular beam epitaxy. Self-aligned ridge waveguide lasers of 3-μm width were fabricated. These lasers have low threshold currents (7 mA for 250-μm-long cavity and 12 mA for 500-μm-long cavity), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW for 3-μm-wide lasers and 285 mW for 5-μm-wide laser) at room temperature under continuous wave (CW) conditions. The CW operating temperature of 185°C is the highest ever reported for InGaAs/GaAs/InGaP quantum well lasers, and is comparable to the best result (200°C) reported for InGaAs/GaAs/AlGaAs lasers     

Low-threshold oxide stripe GaAs/GaAlAs lasers grown by MOCVD

MOCVD-grown insulator defined stripe GaAs/GaAlAs lasers with stripe widths of 6, 10, 20 and 150 ?m have been characterised. Uniform CW threshold currents as low as 45 mA, differential quantum efficiencies as high as 74%, and kink-free power levels as high as 20 mW/facet have been obtained in 160 ?m long, 6 ?m stripe lasers. The internal differential quantum efficiency measured from our 6 ?m stripe lasers approaches one. Single longitudinal mode operation of these lasers has also been observed.     

Low threshold current CW operation of GaInAsP/InP buried heterostructure distributed Bragg-reflector integrated-twin-guide laser emitting at 1.5?1.6 ?m

Low threshold current CW operation of a 1.5?1.6 ?m-wavelength GaInAsP/InP buried heterostructure distributed Bragg reflector integrated twin guide (BH-DBR-ITG) laser was obtained up to 12°C. Single wavelength operation was obtained at a temperature range of 25 deg. The temperature dependence of lasing wavelength was 0.10 nm/deg. At 248 K, the threshold current, the differential quantum efficiency and the maximum output power were 37 mA, 16.3%/facet and 6 mW, respectively.     

Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafers

GaAs-AlGaAs diode lasers have been fabricated on silicon-on-insulator wafers for the first time. Gain-guided graded-index separate-confinement heterostructure single-quantum-well (GRINSCH-SQW) lasers operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power of more than 60 mW/facet. One device operated CW for 75 min at an output power of 1 mW/facet.<>     

Low-threshold single quantum well (60 ?) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant

The letter reports low-threshold MO-CVD GaAlAs DH (~7730 ?) lasers containing Mg as the p-type dopant. The structure consists of symmetric stepped index cladding layers on both sides of a thin single quantum well (~60 ?) active region. Broad-area threshold current densities of 460 A cm?2 and 270 A cm?2 are achieved for cavity lengths of 250 and 500 ?m, respectively. Broad-area room-temperature lasers without facet coatings emit in excess of 400 mW/facet CW output power.     

1550 nm GaInNAsSb distributed feedback laser diodes on GaAs

Single mode laser diodes on GaAs substrates were developed using GalnNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous- wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10degC with a very high sidemode suppression ratio of > 50 dB throughout most of the operational range, and output power up to 15 mW.     

Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)

Stripe-geometry In1-xGaxP1-zAsz(x approx 0.84-0.86, z approx 0.38-0.42) double heterojunction laser diodes, grown by liquid phase epitaxy (LPE) on vapor phase epitaxy (VPE) GaAs1-yPysubstrates, are described that operate (CW, 77 K) in the visible atlambda approx 6280-6360Å with differential quantum efficiencyeta_{ext} sim 28percent and power output in the range 1-7 mW.     

High-power single-mode 2.0 μm laser diodes

Data are presented on high-power single-mode index-guided laser diodes fabricated from a strained-layer InGaAs-InGaAsP double quantum well heterostructure epitaxial design. The total maximum power and external efficiency achieved are 50 mW and 43%, respectively. The far-field is measured to be 31° by 46° in the parallel and perpendicular directions, yielding an aspect ratio of 1.5 for the single-mode laser diode. The optical output of the laser diode is a multi-longitudinal mode spectrum spanning 1.98-2.00 μm at an output power of 50 mW CW. The characteristic temperature of the laser diode is 48 K     

InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I

Previous publications concerned with the development and investigation of InAsSb/InAsSbP double heterostructure lasers emitting at 3–4 μm fabricated by liquid phase epitaxy are reviewed. In pulsed mode, the maximum operating temperature of the lasers is 203 K, the characteristic temperature is 35 K, and differential quantum efficiency is 20±5% at 77K. Mesa-stripe lasers with a 10-to 30-μm stripe width and a 200-to 500-μm cavity length can operate in CW mode up to 110 K. The total optical output power of more than 10 mW at λ=3.6 μm is obtained at T=82 K in CW mode. The output power per mode does not exceed 2 mW/facet. A single-mode lasing is achieved in the temperature range of 12–90 K. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 11, 2000, pp. 1396–1403. Original Russian Text Copyright ? 2000 by Danilova, Imenkov, Sherstnev, Yakovlev.     

CW operation of 1.5 ~ 1.6 ?m wavelength GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector

A 1.5 ~ 1.6 ?m GaInAsP/InP buried-heterostructure integrated twin-guide laser with distributed Bragg reflector (BH-DBR-ITG laser) was realised, for the first time, and CW operation was achieved up to 255 K. Single-wavelength operation was obtained at temperatures between 228 K and 245 K with the temperature dependence of lasing wavelength of 10 ?/deg. At 233 K, the threshold current, the output power and the differential quantum efficiency were 110 mA, 2.2 mW and 4.8%/facet, respectively.