Plasma Etching of α-Sialon Ceramics

Plasma etching of β-Si₃N₄, α-sialon/β-Si₃N₄ and α-sialon ceramics were performed with hydrogen glow plasma at 600°C for 10 h. The preferential etching of β-Si₃N₄ grains was observed. The etching rate of α-sialon grains and of the grain-boundary glassy phase was distinctly lower than that of β-Si₃N₄ grains. The size, shape, and distribution of β-Si₃N₄ grains in the α-sialon/β-Si₃N₄ composite ceramics were revealed by the present method.     

Effect of α to β (β') Phase Transition on the Sintering of Silicon Nitride Ceramics

By using α-Si₃N₄ and β-Si₃N₄ starting powders with similar particle size and distribution, the effect of α-β (β') phase transition on densification and microstructure is investigated during the liquid-phase sintering of 82Si₃N₄·9Al₂O₃·9Y₂O₃ (wt%) and 80Si₃N₄·13Al₂O₃·5AIN·5AIN·2Y₂O₃. When α-Si₃N₄ powder is used, the grains become elongated, apparently hindering the densification process. Hence, the phase transition does not enhance the densification.     

Additive-Assisted Nitridation to Synthesize Si3N4 Nanomaterials at a Low Temperature

Starting from Si powder, NaN₃ and different additives such as N -aminothiourea, iodine, or both, Si₃N₄ nanomaterials were synthesized through the nitridation of silicon powder in autoclaves at 60°–190°C. As the additive was only N -aminothiourea, β-Si₃N₄ nanorods and α-Si₃N₄ nanoparticles were prepared at 170°C. If the additive was only iodine, α-Si₃N₄ dendrites with β-Si₃N₄ nanorods were obtained at 190°C. However, when both N -aminothiourea and iodine were added to the system of Si and NaN₃, the products composed of β-Si₃N₄ nanorods and α, β-Si₃N₄ nanoparticles could be prepared at 60°C.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.     

Microstructural Development During Gas-Pressure Sintering of α-Silicon Nitride

Gas-pressure sintering of α-Si₃N₄ was carried out at 1850 ° to 2000°C in 980-kPa N₂. The diameters and aspect ratios of hexagonal grains in the sintered materials were measured on polished and etched surfaces. The materials have a bimodal distribution of grain diameters. The average aspect ratio in the materials from α-Si₃N₄ powder was similar to that in the materials from β-Si₃N₄ powder. The aspect ratio of large and elongated grains was larger than that of the average for all grains. The development of elongated grains was related to the formation of large nuclei during the α-to-β phase transformation. The fracture toughness of gaspressure-sintered materials was not related to the α content in the starting powder or the aspect ratio of the grains, but to the diameter of the large grains. Crack bridging was the main toughening mechanism in gas-pressure-sintered Si₃N₄ ceramics.     

Effect of Sintering Additives on Microstructure and Mechanical Properties of Porous Silicon Nitride Ceramics

Porous silicon nitride (Si₃N₄) ceramics with about 50% porosity were fabricated by pressureless sintering of α-Si₃N₄ powder with 5 wt% sintering additive. Four types of sintering aids were chosen to study their effect on the microstructure and mechanical properties of porous Si₃N₄ ceramics. XRD analysis proved the complete formation of a single β-Si₃N₄ phase. Microstructural evolution and mechanical properties were dependent mostly on the type of sintering additive. SEM analysis revealed the resultant porous Si₃N₄ ceramics as having high aspect ratio, a rod-like microstructure, and a uniform pore structure. The sintered sample with Lu₂O₃ sintering additive, having a porosity of about 50%, showed a high flexural strength of 188 MPa, a high fracture toughness of 3.1 MPa·m^1/2, due to fine β-Si₃N₄ grains, and some large elongated grains.     

Microstructure and Mechanical Properties of the in situβ-Si3N4/α'-SiAlON Composite

The in situ β-Si₃N₄/α'-SiAlON composite was studied along the Si₃N₄–Y₂O₃: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si₃N₄/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si₃N₄ during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si₃N₄ fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m^1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.     

Influence of Phase Formation on Dielectric Properties of Si3N4 Ceramics

The influence of phase formation on the dielectric properties of silicon nitride (Si₃N₄) ceramics, which were produced by pressureless sintering with additives in MgO–Al₂O₃–SiO₂ system, was investigated. It seems that the difference in the dielectric properties of Si₃N₄ ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si₃N₄, β-Si₃N₄, and the intermediate product (Si₂N₂O) in the samples. Compared with α-Si₃N₄ and Si₂N₂O, β-Si₃N₄ is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si₃N₄ could be attributed to the ionic relaxation polarization.     

Ionic Conductivity of the System Si-Al-O-N from 850° to 1400°C

Electrical conductivity was measured from 850° to 1400°C for β-sialon and pure X phase as well as for the sintered system Si₃N₄-Al₂O₃, containing β-sialon, X phase, β-Si₃N₄, and glassy phase. Ionic conductivity was measured at >1000°C. The charge carriers were identified by electrolysis. The results showed that pure β-sialon is ionically conducting because of Si⁴⁺ migration for the temperature range studied. Pure X phase shows ionic conduction by Si⁴⁺ above 1000°; below 1000°C, it shows electronic conduction because of impurities. The conductivity of the sintered system Si₃N₄-Al₂O₃ containing β-sialon, β-Si₃N₄ X phase, and glassy phase changes as the relative quantities of β -sialon and X phase change. The apparent activation energies for the ionic and electronic conductivities are 45 and 20 kcal/mol, respectively.     

Comparison of the Luminescence Properties of Dy3+ in α-Sialon and Oxynitride Glass

Dy-α-sialon and β-Si₃N₄ materials containing Dy-oxynitride glass were hot pressed at 1800°C for 1 h. The luminescence spectra of Dy³⁺ in these samples were compared when excited at 350 nm. The results showed that two strong emission bands in the region 470–500 nm and 570-600 nm, associated with the ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions of Dy³⁺ ions, were observed in Dy-α-sialon. However, no emission peak was detected from the β-Si₃N₄ sample, despite it containing the same amount of Dy³⁺ cations. This proved that only the Dy³⁺ cations in the α-sialon structure, not those in the oxynitride glass, produce the luminescence spectrum.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Electron Microscopy Study of the Effect of Iron in Reaction-Sintered Silicoa Nitride

The microstructure, crystal structure, and chemical composition of reaction-sintered Si₃N₄ containing iron were studied using conventional and scanning transmission electron microscopy. It was found that the grains of β -Si₃N₄ were large and blocklike with well-developed facets, a series of voids along some grain boundaries, a subgrain of iron silicide near the periphery, and penetration of iron silicide into the three-grain junctions and grain boundaries. At some distance from each β -Si₃N₄ grain was a region of small α-Si₃N₄ grains, with no evidence of iron silicide. Between this region and the β -Si₃N₄ grain was a zone containing both α- and β -Si₃N₄ and iron silicide. These observations suggest that the large β -Si₃N₄ grains grow in liquid iron silicide, that the smaller α-Si₃N₄ grains grow from the vapor, and that the latter are converted to the β form by solution in, and reprecipitation from, liquid iron silicide.     

Microstructural Observations on Hot-Pressed Si3N4

The development of microstructure in hot-pressed Si_aN₄ was studiehd for a typical Si₃N₄ powder with and without BeSiN₂ as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si₃N₄ conversion and specific surface area showed that BeSiN₂ appears to increase the mobility of the system by enhancing densification, α- to β-Si₃N₄ transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.     

Shock Synthesis of Cubic Silicon Nitride

The phase transitions of α-Si₃N₄ and β-Si₃N₄ have been investigated by shock compression through the recovery technique and Hugoniot measurements. α- and β-Si₃N₄ are transformed into a cubic spinel structure ( c -Si₃N₄). The yield of c -Si₃N₄ increases with increasing shock pressure and reaches 100% at 63 GPa. The shock-synthesized c -Si₃N₄ powders are nanocrystals and display a high-temperature metastability up to about 1620 K. c -Si₃N₄ is one of the hard materials based on the measured equation of state. c -Si₃N₄ powders have been characterized by electron microscopy and ²⁹Si magic angle spinning NMR spectroscopy. The purification and separation method has been developed to obtain pure c -Si₃N₄ powders.     

New Strategies for Preparing NanoSized Silicon Nitride Ceramics

We report the preparation of nanosized silicon nitride (Si₃N₄) ceramics via high-energy mechanical milling and subsequent spark plasma sintering. A starting powder mixture consisting of ultrafine β-Si₃N₄ and sintering additives of 5-mol% Y₂O₃ and 2-mol% Al₂O₃ was prepared by high-energy mechanical milling. After milling, the powder mixture was mostly transformed into a non-equilibrium amorphous phase containing a large quantity of well-dispersed nanocrystalline β-Si₃N₄ particles. This powder precursor was then consolidated by spark plasma sintering at a temperature as low as 1600°C for 5 min at a heating rate of 300°C/min. The fully densified sample consisted of homogeneous nano-Si₃N₄ grains with an average diameter of about 70 nm, which led to noticeable high-temperature ductility and elevated hardness.     

Experimental Evidence for the Anisotropic Ostwald Ripening of β-Silicon Nitride

A powder mixture of α-Si₃N₄, Y₂O₃, and SiO₂ was heat-treated in a loose powder state in the temperature range of 1750°–1900°C for 2 h; then, the mixture was acid-rinsed to remove the glassy phase. The widths and lengths of the resulting β-Si₃N₄ crystals were analyzed quantitatively. The width–aspect-ratio distribution of the β-Si₃N₄ crystals initially showed a strong negative correlation, and then the aspect ratio of crystals with small widths quickly decreased. After a stage in which aspect ratio was almost constant, regardless of the width, the width-aspect-ratio distribution evolved to show a positive correlation in the final stage. This pattern of morphology evolution of the β-Si₃N₄ crystals was in good agreement with that predicted by the anisotropic Ostwald ripening model.     

Near-Net Shape β-Si4Al2O2N6 Parts by Hydrolysis Induced Aqueous Gelcasting Process

In this paper, a new net-shaping process, an hydrolysis-induced aqueous gelcasting (GC) (GCHAS) has been reported for consolidation of β-Si₄Al₂O₂N₆ ceramics from aqueous slurries containing 48–50 vol%α-Si₃N₄, α-Al₂O₃, AlN, and Y₂O₃ powders mixture. Dense ceramics of same composition were also consolidated by aqueous GC and hydrolysis assisted solidification routes. Among three techniques used, the GCHAS process was found to be superior for fabricating defect-free thin wall β-Si₄Al₂O₂N₆ crucibles and tubes. Before use, the as purchased AlN powder was passivated against hydrolysis. The sintered β-Si₄Al₂O₂N₆ ceramics exhibited comparable properties with those reported for similar materials in the literature.     

Microstructure Tailoring for High Thermal Conductivity of β-Si3N4 Ceramics

β-Si₃N₄ ceramics sintered with Yb₂O₃ and ZrO₂ were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si₃N₄ raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)⁻¹). Thus, this work demonstrates that it is possible for β-Si₃N₄ ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder.     

Fabrication of Hard and Strong α/β-Si3N4 Composites With MgSiN2 as Addivitives

α/β-Si₃N₄ composites with various α/β phase ratios were prepared by hot pressing at 1600°–1650°C with MgSiN₂ as sintering additives. An excellent combination of mechanical properties (Vickers indentation hardness of 23.1 GPa, fracture strength of about 1000MPa, and toughness of 6.3 MPa·m^1/2) could be obtained. Compared with conventional Si₃N₄-based ceramics, this new material has obvious advantages. It is as hard as typical in-situ-reinforced α-Sialon, but much stronger than the latter (700 MPa). It has comparable fracture strength and toughness, but is much harder than β-Si₃N₄ ceramics (16 GPa). The microstructures and mechanical properties can be tailored by choosing the additive and controlling the heating schedule.     

Solvothermal Synthesis of Si3N4 Nanomaterials at a Low Temperature

Silicon nitride nanowires or nanorods have been synthesized from SiCl₄, NaN₃, and metallic Mg at temperatures ranging from 200° to 300°C. X-ray powder diffraction patterns indicated that the as-obtained products were mainly β-Si₃N₄. Scanning electron microscope and high-resolution transmission electronic microscopy showed that the samples mostly consisted of Si₃N₄ nanowires or nanorods. As metallic iron powder was used, α-Si₃N₄ was mainly formed at 250°C.