武汉大学加速器-透射电镜联机系统

本文介绍我国第一台加速器-电镜联机装置,该装置由一台2×1.7 MV串列加速器、一台国产200 kV离子注入机和一台日立H800型透射电子显微镜组成,并通过联机传输系统实现联机.目前离子束已进入电镜样品室,达到原位观测的要求.     

加速器-电镜联机的离子光路及其调整方案

离子辐照引起的材料微结构变化是一个复杂的过程,用加速器-电镜联机装置可原位观察载能离子束辐照引起的材料微结构演变.武汉大学加速器-电镜联机装置由1台2×1.7 MV串列加速器、1台200 kV离子注入机和1台200 kV透射电镜组成,通过自行设计的传输系统实现联机.本文介绍联机装置的光路布局,给出了静电加速器离子动力学计算程序LEADS(linear and electrostatic accelerator dynamics simulation)优化计算的结果,提出了两种改进方案,并用LEADS对改造后的加速器-电镜联机中离子运动进行了计算.结果显示,调整现光路二单元四极透镜的同时,在200 kV注入机90°偏转磁铁至电镜之间增加1个二单元静电四极透镜,将提高该系统中离子束传输效率.     

加速器联机装置运行状况

2008年武汉大学加速器联机系统初步建成,200 kV离子注入机至透射电镜束线进行了运行调试,开展了气体离子注入单晶Si、GaAs、Ag纳米晶和超临界反应堆材料(C276和6XN)的原位结构研究。结果表明,样品在注入至一定剂量时发生明显多晶和非晶化,单晶Si出现非晶化的临界剂量在10~(14) cm~(-2)。C276材料经1×10~(15)cm~(-2)的Ar离子辐照后,产生尺寸3-12 nm的位错环,其密度随剂量提高而增大,至5×10~(15)cm~(-2)出现多晶,剂量超过3×10~(16) cm~(-2)出现非晶化。在加速器-电镜联机光路上安装在线RBS靶室对离子束辐照材料进行元素成分和晶格定位测试。靠近电镜端安装50 kV低能离子源,开展核材料中氦泡形成过程的原位观测。对RBS/C装置进行数字化改造,用Labview控制系统运行,目前可进行计算机控制的背散射沟道测试。     

Ar~+辐照Hastelloy C276显微结构演化多尺度模拟研究及实验验证

采用分子动力学结合团簇动力学研究了Hastelloy C276Ni基合金在Ar+辐照(室温,约10dpa)下的显微结构演化机理,开发了多尺度模拟程序Radieff,利用Radieff模拟了在Ar+辐照下C276中间隙位错环和孔洞的形核、长大过程。在武汉大学串列加速器-离子注入机-透射电镜一体化联机装置上开展了115keV Ar+辐照C276验证实验,采用一体化联机透射电镜观察了辐照缺陷尺寸及形貌。不同辐照剂量下位错环尺寸模拟结果与实验结果吻合很好。     

中等电荷态双等-PIG源的实验研究

重离子加速器(串列加速器除外)、离子注入机和其它各种利用离子束进行表面分析的装置中,如果采用多电荷离子源,则可成倍地提高可供利用的离子的能量范围,这对充分发挥装置的潜力,实现装置的小型化有重要意义。 我们利用原有的双等离子体离子源,改成双等-PIG源,在离子源实验台上做了几种气体离子的引束试验,获得的初步结果如下:     

N+离子注入对锆-4合金耐腐蚀性能的影响

为了研究N+离子注入对锆-4合金耐腐蚀性能的影响,本文使用直线加速器产生的N+离子注入锆-4合金样品,通过对离子注入后样品电化学曲线的测量,分析不同剂量下N+离子注入对锆-4合金钝化电流密度的影响,同时使用透射电子显微镜分析注入层的微观结构.结果表明,随着注入剂量的提高(0-1×1016cm-2),样品钝化电流密度下降,耐腐蚀性能提高,其原因主要归结于样品表层由多晶结构到非晶结构的转变过程.     

在线低能气体离子源

材料中氦和氢积累可引起材料性能的恶化甚至失效。为研究材料内氦和氢的存在形式、氦与氢及缺陷的相互作用、气泡的形成和演变过程以及各种因素的影响,建立一套离子束能量最高20keV的潘宁型气体离子源引出和聚焦系统,与200kV透射电镜联机,在离子注入现场原位观察氦和氢不同注入浓度下材料内部的微观结构及变化过程。对离子源进行氦离子的起弧、引出和聚焦测试。离子源在15–60mA放电电流范围内稳定地工作。在5×10–3Pa和1.5×10–2Pa工作气压下,放电电压约380V和320V。低气压下引出离子束流比高气压下大,且引出束流随放电电流和吸极电压的增加而增加。等径三圆筒透镜有显著聚焦作用,在距透镜出口150cm处,离子束流密度提高一个量级以上。能量10keV左右的氦离子获得束流密度约200nA·cm–2的离子束,可满足多种材料进行在线离子注入和原位电镜观测的需要。     

基于重离子辐照专用装置的束流探测新技术

基于HI-13串列加速器的重离子辐照专用装置已在串列二厅安装完毕并通过了真空测试等离线调试阶段。在串列加速器安改后即可进行在束性能测试,对装置指标进行检验。     

硅离子注入聚合物摩擦特性研究

采用金属蒸汽真空弧（MEVVA）离子注入机引出的Si离子进行了聚酯薄膜（PET）改性研究，注入后的聚酯膜表面结构发生了很大的变化。用透射电子显微镜观察了注入聚酯膜的横截面，结果表明，在注入层形成颗粒的沉积。红外吸收测量揭示这些颗粒为SiC和富集的碳颗粒。这些颗粒增强了注入层表面强化效果。用纳米硬度计测量显示，Si离子注入可明显地提高聚酯膜表面硬度和杨氏模量，从而极大地的增强了表面抗磨损特性。最后讨论了Si离子注入聚酯膜改善特性的机理。     

321型束流剖面监测仪在离子束技术中的应用

束流剖面监测仪是监测带电粒子束在传输过程中状态变化的一种装置。该装置的叶片式探针(以下简称探针)安装在粒子加速器、同位素分离器和离子注入机等监测位置上并由它把截获的信号显示在示波器屏上便可观察到沿束横截面束流密度分布曲线(以下简称束形)。通过束形变化我们可定性地判断束流强度、束流品质和它在束管道中的相对位置等。因此,它在国外各种类型的粒子加速器上广为使用。     

Mass spectrometry improvement on an high current ion implanter

The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source in a high current implanter is described. The spectrometry system uses two signals (x-y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. The developed system uses a PC to control the displaying of the extracted beam mass spectrum, and also recording of all data acquired for posterior analysis. The operator uses a LabVIEW code that enables the interfacing between an I/O board and the ion implanter. The experimental results from an ion implantation experiment are shown.     

A low-cost, accurate and non-intercepting continuous method for beam current measurements in a high-current ion implanter

The development of a low-cost, accurate, non-intercepting continuous method for measuring the beam current in a high-current ion implanter is described. The method, named a differential current monitor, is based on the electric charge conservation principle, applied to the currents that flow in the implanter electrical system, due to the acceleration voltage applied to the ion beam and the leakage currents to ground. This method allows for continuous measurement of the ion beam current without intercepting it. Since its installation, it is possible to accurate measure ion beam currents from tens of μA to mA, which is the normal range for this type of system.     

High precision Hf ion implantation using a high-current ion implanter

The development of accurate mass spectrometry, enabling the identification of all the ions extracted from the ion source and further precise ¹⁸⁰Hf isotope implantation, in a high current implanter is described. The spectrometry system uses two signals (x-y graphic), one proportional to the magnetic field (x-axes), taken from the high-voltage potential with an optic fiber system, and the other proportional to the beam current intensity (y-axes), taken from a beam-stop. The ion beam mass register in a mass spectrum of all the elements magnetically analyzed with the same radius and defined by a pair of analyzing slits as a function of their beam intensity is presented. Hence, it is possible to implant ¹⁸⁰Hf⁺, with less than 1% contamination from neighboring isotopes, in order to conduct material characterization studies by Perturbed Angular Correlations. The precision of the low fluence ion implantation has been done by neutron activation analysis.     

100keV金属表面改性离子注入与混合两用机

叙述了１００ｋｅＶ金属表面改性离子注入与混合两用机的总体结构及各主要部件的技术参数。该机经过调试各项主要指标已达到设计要求，工作稳定可靠，已开始金属材料表面改性实验。     

EXPERIMENTS OF MeV ION BEAM INDUCED ATOMIC MIXING

An experimental apparatus for studies of MeV ion beam modification of materials has been established on a 3 MV tandem accelerator at Fudan university. A system of X-Y electrostatic scanning implantation of MeV heavy ions and in situ Rutherford. backscattering analysis was included in it. The uniformity of scanning implantation was checked by the RBS measurement of a Si wafer implanted with 1 MeV Au ions. MeV ion beam mixing of Au/Si, Au/Ge and Ag/Si systems was preliminarily studied. The samples were irradiated by certain fluences of 1 MeV Ag ions at room temperature. The mixed layers were analyzed in situ using the glancing RBS technique with 2 MeV 4He+ ions. For Au/Si system, a uniformly mixed layer with a defined composition is obtained, and the intermixing is much less for Ag/Si system than for Au/Si system.     

Search for implantation-induced “re-solution” of Na precipitates in MgO via optical spectroscopy and in situ TEM

It has previously been shown that high fluence Na implantation into MgO crystals followed by annealing leads to the formation of metallic Na precipitates. We have studied the effect of a subsequent low-fluence Na implantation on such precipitates, i.e., the effect of Na damage cascades whose size is comparable to that of the precipitates. Optical spectroscopy experiments and in situ transmission electron microscopy (TEM) experiments performed on-line with the Orsay ion implantor are both discussed. It is shown that simple ballistic ion beam mixing cannot account for the results. The latter indicate that damage-induced mixing at the host matrix-precipitate interface leads to drastic changes in the precipitate composition, presumably due to in-diffusion of oxygen (and possibly Mg) into the precipitate volume.     

用于材料表面强化处理的第三代多功能PⅢ装置

第三代多功能等离子体浸没离子注入（PⅢ）装置的强流脉冲阴极弧金属等离子体源既具有强的镀膜功能，同时也具有强的金属离子注入功能；它的脉冲高压电源能输出大的电流；并可获得高的注入剂量均匀性。该装置既能执行离子注入，又能把离子注入与溅射沉积，镀膜结合在一起，形成多种综合笥表面改性工艺。本文描述了它的主要设计原则、主要部件的特性以及近期的研究工作成果。