新世纪电子技术大未来

新世纪的大门正徐徐打开，21世纪是电子世纪。此时此刻窥视一下电子技术的未来发展（意图配合我国“十五”计划的制订），或是一件有意义的事。就电子元部件产业规模、发展前途而言，下列四大技术特别值得注意：①微电子技术，②光电子技术，③分子、生物、传感器电子技术，④存储、显示电子技术。微电子技术1、高集成化、大容量化、超小型化、大型化半导体集成ds路是信息ti社会oh“t十望，din。iRitK寸15年缩小1个数量级，197o年为IOPm，1985年lpm，1995年03Vm，2000年OIUmc此外，已有能够工作的004只m器件。虽然似乎还没有达到物理极…     

电力电子技术在新能源和新材料行业中的应用

电力电子技术的应用涉及发电、输电、配电、用电等各个环节,特别是在新材料、新能源行业市场容量巨大,且都处于快速成长的初期。     

我国汽车电子业现状及部分新技术探悉

本文分析了我国汽车电子业的发展潜力,并探讨了与车联网和降低碳排放相关的技术方案.     

High-power passively mode-locked semiconductor lasers

We have developed optically pumped passively mode-locked vertical-external-cavity surface-emitting lasers. We achieved as much as 950 mW of mode-locked average power in chirped 15-ps pulses, or 530 mW in 3.9-ps pulses with moderate chirp. Both lasers operate at a repetition rate of 6 GHz and have a diffraction-limited output beam near 950 nm. In continuous-wave operation, we demonstrate an average output power as high as 2.2 W. Device designs with a low thermal impedance and a smooth gain spectrum are the key to such performance. We discuss design and fabrication of the gain structures and, particularly, their thermal properties     

高功率半导体开关为电栅极提供支持

Virginia Tech公司(位于美国弗吉尼亚州Blacksburg)的研究人员开发成功一种能够在传输和分配栅极中提供可靠电压支持的高功率半导体开关。一种被称为发射极关断晶闸管(ETO)的栅极关断晶闸管(GTO)与IGBT的三端子混合器件不仅使功率变换器的尺寸、重量和成本均有所下降,而且还有望将传输栅极的质量和容量提高25%～60%。这种开关能够承受16MW的瞬间功率,并能促使线路速度从60Hz到1～3kHz不等的极高功率变换器以相同的功率电平进行开关操作。迄今为止,材料方面的局限性以及器件昂贵的价格一直限制着功率电子器件在通用栅极中的广泛使用。…     

小发散角高功率半导体激光器研究

在量子阱半导体激光器中,量子尺寸引起的衍射效应使半导体激光器的光束质量很差。分别限制结构的垂直结平面发散角在40°左右,使得光束整形系统比较复杂,限制了半导体激光器的直接应用。为解决这一问题,提出了降低垂直结平面发散角的要求。回顾了小发散角半导体激光器的技术发展及应用,对具有小发散角的模式扩展波导结构进行了理论模拟和实验验证,获得了优化的结构。采用MOCVD外延技术生长了外延片,制作了高峰值功率脉冲激光器,获得了快轴发散角小于25,°峰值功率大于80W的半导体激光器,在激光引信应用中获得良好效果。     

Progress in silicon carbide semiconductor electronics technology

Silicon carbide’s demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions is expected to enable significant enhancements to a far-ranging variety of applications and systems. However, improvements in crystal growth and device fabrication processes are needed before SiC-based devices and circuits can be scaled-up and incorporated into electronic systems. This paper surveys the present status of SiC-based semiconductor electronics and identifies areas where technological maturation is needed. The prospects for resolving these obstacles are discussed. Recent achievements include the monolithic realization of SiC integrated circuit operational amplifiers and digital logic circuits, as well as significant improvements to epitaxial and bulk crystal growth processes that impact the viability of this rapidly emerging technology.     

EMC in the new millennium

EMC is an important part of the ever-changing world in which we now find ourselves. Society is increasingly dependent on radio, telecommunications and electronic products, but their use is only possible if the necessary EMC criteria are met. However the criteria of the 20th century will not necessarily be those required for the 21st century. EMC is no longer a backwater of engineering where we can afford to leave the problems to the `experts'; it is an area where every engineer needs to become involved. Undoubtedly EMC has made significant strides forward during the 1990s, but further progress is necessary if we are to ensure that we continue to enjoy a relatively interference-free environment in the years to come. This paper looks at the six major challenges that need to be tackled if we are to be successful in controlling EMC in this new millennium     

A new TCAD-based statistical methodology for the optimization andsensitivity analysis of semiconductor technologies

A new TCAD-based statistical methodology for the optimization and sensitivity analysis of semiconductor technologies has been developed and demonstrated on a 0.18-μm SOI CMOS process. Two new screening techniques applicable to deterministic systems (Lenth's test and normal probability plots) were introduced and compared with correlation analysis. The graphical nature of the new techniques provided easier analysis of the screening results by clearly displaying which process factors surpass predefined significance limits. A multiresponse steepest ascent analysis was developed to locate regions of improved process performance before beginning response surface experimentation. To perform the analysis, a composite function representing the response criteria was constructed using desirability functions and incorporated within the steepest ascent methodology. Locating the region of improved performance allowed smaller experimental designs to be used for the response study significantly improving model accuracy. The response models were used to optimize the SOI CMOS process and perform sensitivity analyzes on both the baseline and optimized processes. Optimization resulted in a 15% increase in I_dsat without violating any other criteria. The results of the sensitivity analyzes, which showed the greatest benefit from the increased model accuracy, indicated no conspicuous device performance degradation caused by anticipated manufacturing variations     

Skin-inspired electronics:emerging semiconductor devices and systems

Current electronics are driven by advanced microfabrication for fast and efficient information processing.In spite of high performance,these wafer-based devices are rigid,non-degradable,and unable to autonomous repair.Skin-inspired electronics have emerged as a new class of devices and systems for next-generation flexible and wearable electronics.The technology gains inspiration from the structures,properties,and sensing mechanisms of the skin,which may find a broad range of applications in cutting-edge fields such as healthcare monitoring,human-machine interface,and soft robotics/prostheses.Practical demands have fueled the development of electronic materials with skin-like properties in terms of stretchability,self-healing capability,and biodegradability.These materials provide the basis for functional sensors with innovative and biomimetic designs.Further system-level integrations and optimizations enable new forms of electronics for real-world applications.This review summarizes recent advancements in this active area and speculates on future directions.     

Radiation testing of semiconductor devices for space electronics

Radiation effects testing, part selection, and hardness assurance for application to electronic components in the natural space environment are discussed. The emphasis is on semiconductor devices, primarily silicon microcircuits, which are used in the greatest quantity and which, in most cases, are the most sensitive. After a summary of the natural space radiation environment and the effects of radiation on semiconductor devices, laboratory simulation of space radiation and extrapolation to space are covered. Radiation testing is performed to understand failure mechanisms, to characterize the radiation response of specific devices, and to provide data for lot acceptance. Part selection and hardness assurance are discussed by contrasting the traditional approach with the unique aspects of space systems. Some recommendations are made for treating the more complex aspects of space system microcircuit hardness assurance     

High-power nearly diffraction-limited AlGaAs-InGaAs semiconductor slab-coupled optical waveguide laser

Beam-quality measurements on the output of a 915-nm AlGaAs-InGaAs-GaAs slab-coupled optical waveguide laser (SCOWL) are reported. This device had a nearly circular mode (3.8 /spl mu/m by 3.4 /spl mu/m 1/e/sup 2/ widths in the near-field) and was capable of a single-ended continuous-wave output power of greater than 1 W. Measurements of M/sup 2/ indicate that the SCOWL output beam is nearly diffraction-limited in both directions with M/sub x//sup 2/ /spl sim/ M/sub y//sup 2/ /spl sim/ 1.1 over the entire range of output powers measured.     

High-power semiconductor edge-emitting light-emitting diodes foroptical low coherence reflectometry

A new semiconductor source was designed for optical low coherence reflectometry, increasing the sidelobe-free dynamic range by three to five orders of magnitude compared to conventional EELED's. Reflectivities internal to an optical fiber circuit separated by as much as eight orders of magnitude can now be detected at wavelengths of 1.3 and 1.55 μm, using compact semiconductor sources. For applications not requiring sidelobe-free operation, the same devices can be operated at high current (200 mA) and low temperatures (near 0°C) to produce nearly 1 mW of 1.5 μm emission coupled into single-mode fiber. The resulting wavelength spectrum is smooth, enabling fiber-based absorption spectral measurements     

High-power high-voltage bipolar transistors based on complex semiconductor structures

Physical processes in transistors in which a new structural element (an array of bulk inclusions in the collector region) is introduced were studied. This array gives rise to a decrease in the electric field at the metallurgical boundary of the collector p-n junction and inhibits the development of the secondary breakdown.     

新千年的光器件

光器件与高速电子学和微处理器一样,是引发20世纪末互联网通信革命的主要因素。如今,通过光纤高速公路,我们可以从世界任何地方将我们的计算机与办公室接通。如欲说明带宽的爆炸性增长的势头,我们只需要想一想,单是在1999年,电子商务所产生的数据业务量就等于过去30年电信业务量的总和！然而,这仅仅是开始。我们都很清楚,有时网页需要很长时间才能显示在我们的计算机屏幕上,至于在举行大型通信展会期间,要接通我们的移动电话则更是难上加难……。与密集型波分复用（DWDM）技术有关的光器件则可使我们在传输、交换和选路时走出容…     

Progress of quantum electronics and the future of wireless technologies

Research in quantum electronics over several decades has fueled the creation and rapid growth of today's wireless communications market. Sales of electronic components into this market exceeded $25 billion in 2006. Nearly all cellular handsets sold today include integrated circuits (ICs) based on energy gap engineered transistors—high-electron mobility transistors (HEMTs) and heterojunction base transistors (HBTs). The success of these technologies notwithstanding, future wireless communications systems will require even more demanding IC performance, especially in the areas of linearity and low noise. We propose that a new concept in transistor design, wave-function engineering, offers un-tapped opportunities to realize these needed performance improvements.