Artificial neural network approach for LNA design of GPS receiver

Paper presents an ANN modeling of microwave LNA for the global positioning front end receiver, operating at 1.57542 GHz. To design LNA, multilayer perceptron architecture is used. The scattering parameters of LNA are calculated using Levenberg Marquardt Backpropagation Algorithm for the frequency range 100 MHz to 8 GHz. The inputs given to this architecture are drain to source current, drain to source voltage, temperature and frequency and the outputs are maximum available gain, noise figure and scattering parameters (magnitude as well as angle). ANN model is trained using Agilent MGA 72543 GaAs pHEMT Low Noise Amplifier datasheet and this model shows high regression. The smith and polar charts are plotted for frequency range 100 MHz to 8 GHz.     

Application of ultra wideband RF energy harvesting by using multisection Wilkinson power combiner

In this study, an ultra‐wide band (UWB) energy harvesting circuit was proposed using the Greinacher rectifier circuit. The circuit was designed with Wilkinson power combiner (WPC) for use at two different radio frequency signal inputs. To enable broadband operation, the multisection Chebyshev impedance matching technique was applied in the branches of the WPC circuit. The center frequency was selected 2.2 GHz in the design. In terms of the parameters of reflection, transmission and isolation, the WPC circuit operates in the 0.4 GHz‐3.4 GHz range and the percentage bandwidth has been calculated as 136%. In the designed Greinacher rectifier circuit, power conversion efficiency (PCE) was analyzed for different input powers. When load resistor selected as R = 1500 Ω, the PCE for the input power of 9 dBm was about 70%. The proposed circuit, where WPC and Greinacher rectifier circuits was used together for energy harvesting; was operated in the frequency ranges BW₁ = 0.4‐0.81 GHz, BW₂ = 1.54‐1.84 GHz, and BW₃ = 2.2 GHz‐2.89 GHz. As a power combining application, dual power inputs were applied to the WPC circuit with frequencies of 540 MHz‐1800 MHz, 540 MHz‐2450 MHz, 540 MHz‐2700 MHz, 800 MHz‐1800 MHz, 800 MHz‐2450 MHz and 800 MHz‐2700 MHz. Eventually, approximately 70.5% PCE and 1.65 V output voltage were obtained.     

18‐31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T‐gate high electron mobility transistor (HEMT) process

GaN technology has attracted main attention towards its application to high‐power amplifier. Most recently, noise performance of GaN device has also won acceptance. Compared with GaAs low noise amplifier (LNA), GaN LNA has a unique superiority on power handling. In this work, we report a wideband Silicon‐substrate GaN MMIC LNA operating in 18‐31 GHz frequency range using a commercial 0.1 μm T‐Gate high electron mobility transistor process (OMMIC D01GH). The GaN MMIC LNA has an average noise figure of 1.43 dB over the band and a minimum value of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA. The small‐signal gain is between 22 and 25 dB across the band, the input and output return losses of the MMIC are less than ?10 dB. The P_1dB and OIP3 are at 17 dBm and 28 dBm level. The four‐stage MMIC is 2.3 × 1.0 mm² in area and consumes 280 mW DC power. Compared with GaAs and InP LNA, the GaN MMIC LNA in this work exhibits a comparative noise figure with higher linearity and power handling ability.     

10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process

This article presents the design and test data for a 10W broadband balanced limiter/LNA MMIC fabricated using MSAG MESFET process. The limiter is based on Schottky diodes and the two‐stage LNA is designed using high‐performance MESFETs. The typical measured performance for the limiter/LNA circuit includes gain greater than 14 dB, NF less than 2.7 dB, and return loss better than 20 dB over the 8.5–11.5 GHz frequency range. The CW power handling for the packaged limiter/LNA circuits was greater than 10W. The packaged devices were also exposed to power levels greater than 10W, and no catastrophic failures were observed up to 18W. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 118–127, 2003.     

一种应用于微波探测的双频天线的设计

为增加火灾探测天线频带范围,基于微带贴片天线,采用凹槽加载技术,设计了中心频率在Ku(12.4～18.0 GHz)波段的双频微带单元天线.利用HFSS软件对其建模、仿真及优化,结果表明,该单元天线在14.8 GHz和16.1 GHz时回波损失达到最小值,且回波损失小于-10 dB的带宽分别为600MHz和390 MHz.利用该单元天线,进而设计了一款2×2阵列天线,实测结果表明:该阵列天线具有很好的双频谐振特性,在14.3～14.9 GHz和15.7 ～16.1 GHz频带内既保留了原单元天线好的回波损耗特性,又提高了增益,使两个频段最大增益分别达到13.7 dBi和11.3 dBi.     

基于E3238S的电磁环境监测系统设计与实现

为实现电磁环境快速和高精度监测,采用先进的E3238S仪器,增配相应的硬件,设计开发了系统软件,形成了一套完整的电磁环境监测系统,实现了电磁信号分选、识别、测频、测向等功能,频率范围达到1~18 GHz,扫描速度达到10 GHz/s,测频精度优于0.1 MHz,测向精度优于3°(r.m.s);实际使用结果表明:该系统充分利用了E3238S仪器的优势,弥补了其存在的不足,能够实现电磁信号的高速搜索、分析捕获、测向、测量数据长时间存储、数据回放等功能,满足了电磁环境监测的需要。     

一种新型负反馈超宽带低噪声放大器的设计与实现

随着超宽带技术的发展,系统设计对低噪声放大器的性能提出了越来越高的要求。针对宽带放大器增益平坦度低。匹配性差等问题,本文从负反馈理论着手,改进了负反馈网络。通过ADS软件的辅助设计,实现了30MH—1．35GHz频段下的低噪声放大器的设计。通过对各项电路参数的优化,实现了增益为17．7dB,增益平坦度小于dB,输入输出电压驻波比小于1．5,噪声系数小于2．6的技术指标。     

RF visualization to support airborne collection management

Visualization of radio frequency (RF) has myriad commercial and military applications, including airborne collection management (CM). In airborne collection, an aircraft is equipped with a receiver that detects radio signals in the high frequency (HF, 3 to 30 MHz), very high frequency (VHF, 30 to 300 MHz), and ultra high frequency (UHF, 300 MHz to 3 GHz) bands of the spectrum. The aircraft must navigate selected regions, lingering in certain areas to collect data while avoiding others because of electronic interference or physical threat. The problem is therefore to set the optimal flight path, or surface, to collect RF data     

基于枝节加载多模谐振器的电调微波滤波器设计

针对认知无线电技术对射频微波滤波器的新要求,提出了一种基于枝节加载多模谐振器的电调微波滤波器。该电调微波滤波器由一个枝节加载微带多模谐振器和变容二极管组成,实现了滤波器的小型化。在分析枝节加载微带多模谐振器的基础上,通过在微带谐振器两端和加载枝节上加载变容二极管的方法,设计了枝节加载的电调多模微带谐振器,并提出了复杂微带谐振器谐振特性的分析方法。采用源和负载耦合的方法在通带右边引入一传输零点。通过在源和负载端放置耦合线的方法,提高了滤波器的通带选择性。针对滤波器带外衰减小的问题,引入一种新型的频变馈电结构,改善了滤波器的带外衰减特性。通过优化仿真确定了电调滤波器的尺寸参数。仿真验证了该滤波器的特性,当变容二极管的可调范围为2pf-10pf时,滤波器的频率可调范围为2.10GHz-2.40GHz,频率变化范围为300MHz。     

一种10GHz高增益低噪声放大器设计

提出了一种带有输入匹配网络优化方法的窄带10GHzLNA电路。通过插入全新的输入匹配网络,不仅满足LNA低噪声的要求,同时更使增益有所提高。提出的LNA采用0．181μmSiGeBiCMOS工艺,工作频率为10GHz。结果表明,提出的窄带HBT10GHzLNA电路,在10GHz频段测试增益大于lldB,噪声3．6dB,功耗9mw,达到了较好的匹配效果,有较好的稳定性,满足了收发机对LNA的指标要求。     

一个低抖动比1GHz环形VCO的设计与实现

通过对Weigandt模型进行噪声分析,采用一种改进的差分延迟单元结构,成功设计了一个稳定输出1 GHz的环形压控振荡器。同时,采用SMIC 0.18μm标准CMOS工艺流片,在输出端增加钳位管和正反馈管使输出电位能够快速转变为给定值,已达到高速振荡频率和较低噪声比的效果。流片后测试结果表明,当控制电压为30μV～800 mV时,输出频率可达740 MHz～1.3 GHz,并与输入电压之间呈现良好的线性性;在中心振荡频率为1 GHz时,噪声电压与信号电压的比满足设计要求。     

Survey on parameter optimization of mobile communication band low noise amplifier design

A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third‐order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm² of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, cross‐coupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.     

A miniature low‐power ultra‐wideband low noise amplifier in 0.18 μm CMOS

A 0.18‐μm CMOS low‐noise amplifier (LNA) operating over the entire ultra‐wideband (UWB) frequency range of 3.1–10.6 GHz, has been designed, fabricated, and tested. The UWB LNA achieves the measured power gain of 7.5 ± 2.5 dB, minimum input matching of ?8 dB, noise figure from 3.9 to 6.3 dB, and IIP3 from ?8 to ?1.9 dBm, while consuming only 9 mW over 3–10 GHz. It occupies only 0.55 × 0.4 mm² without RF and DC pads. The design uses only two on‐chip inductors, one of which is such small that could be replaced by a bonding wire. The gain, noise figure, and matching of the amplifier are also analyzed. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2011.     

Thermoelastic damping in fine-grained polysilicon flexural beam resonators

The design and fabrication of polysilicon flexural beam resonators with very high mechanical quality factors (Q) is essential for many MEMS applications. Based on an extension of the well-established theory of thermoelastic damping in homogeneous beams, we present closed-form expressions to estimate an upper bound on the attainable quality factors of polycrystalline beam resonators with thickness (h) much larger than the average grain size (d). Associated with each of these length scales is an independent damping mechanism; we refer to them as Zener and intracrystalline thermoelastic damping, respectively. For representative polysilicon beam resonators (h = 2 /spl mu/m; d = 0.1 /spl mu/m) at 300 K, the predicted critical frequencies for these two mechanisms are /spl sim/7 MHz and /spl sim/14 GHz, respectively. The model is consistent with data from the literature in the sense that the measured values approach, but do not exceed, the calculated thermoelastic limit. From the viewpoint of the maximum attainable Q, our model suggests that single-crystal silicon, rather than fine-grained polysilicon, is the material of choice for the fabrication of flexural beam resonators for applications in the gigahertz frequency range.     

RF-MEMS Capacitive Switches Fabricated Using Printed Circuit Processing Techniques

This paper presents radio frequency microelectromechanical systems (RF-MEMS) capacitive switches fabricated using printed circuit processing techniques. The key feature of this approach is the use of most commonly used flexible circuit film, Kapton E polyimide film, as the movable switch membrane. The physical dimensions of these switches are in the mesoscale range. For example, electrode area of a typical capacitive shunt switch on coplanar waveguide (CPW) is 2 mmtimes1 mm, respectively. A CPW shunt switch with insertion loss <0.4 dB and isolation >10 dB in the frequency range of 8 to 30 GHz is reported. K-band, Ku-band, and X-band high-isolation CPW shunt switches designed by inductive compensation of the switch down-position capacitance are also presented. Inductance compensation has been implemented by introducing inductive step-in-width junctions in the MEMS switch electrode. The K-band switch provides a maximum isolation value of 54 dB at 18 GHz. For the K-band switch, the insertion loss is less than 0.3-0.4 dB in the frequency range of 1-30 GHz and the isolation values are better than 20 dB in the frequency range of 12 to 30 GHz. The Ku-band switch provides a maximum isolation of 46 dB at 16.5 GHz. For the Ku-band switch, the insertion loss is less than 0.4-0.45 dB in the frequency range of 1-30 GHz and the isolation is greater than 20 dB in the frequency range of 12 to 22 GHz. The X-band switch provides a maximum isolation value of 32 dB at 10.6 GHz. The insertion loss is less than 0.25-0.3 dB in the frequency range of 1-18 GHz and the isolation is better than 20 dB in the frequency range of 8.5 to 13.5 GHz for the X-band switch. The measured typical pull-down voltage is in the range of 100-120 for this type of switches. These switches are uniquely suitable for monolithic integration with printed circuits and antennas on organic laminate substrates     

Design and development of enhanced bandwidth multi‐frequency slotted antenna for 4G‐LTE/WiMAX/WLAN and S/C/X‐band applications

A multi‐frequency rectangular slot antenna for 4G‐LTE/WiMAX/WLAN and S/C/X‐bands applications is presented. The proposed antenna is comprised of rectangular slot, a pair of E‐shaped stubs, and an inverted T‐shaped stub and excited using staircase feed line. These employed structures help to achieve multiband resonance at four different frequency bands. The proposed multiband slot antenna is simulated, fabricated and tested experimentally. The experimental results show that the antenna resonates at 2.24, 4.2, 5.25, and 9.3 GHz with impedance bandwidth of 640 MHz (2.17‐2.82 GHz) covering WiMAX (802.16e), Space to Earth communications, 4G‐LTE, IEEE 802.11b/g WLAN systems defined for S‐band applications. Also the proposed antenna exhibits bandwidth of 280 MHz (4.1‐4.38 GHz) for Aeronautical and Radio navigation applications, 80 MHz (4.2‐4.28 GHz) for uncoordinated indoor systems,1060 MHz (5.04‐6.1 GHz) for the IEEE 802.11a WLAN system defined for C‐band applications and 2380 MHz (7.9‐10.28 GHz) defined for X‐band applications. Further, the radiation patterns for the designed antenna are measured in anechoic chamber and are found to agree well with simulated results.     

Design of a System to Generate a Four Quadrant Signal at High-Frequency

In order to research biological cells, a well-established physical method can be used, that is electrorotation. To achieve electrorotation system, a signal oscillator or a signal generator is always needed. The signal generator is used for generating signals with phase shift and transfers it to the electro chamber. The frequency range of the output signal is generally between 20Hz to 100MHz for the signal generator, but for high frequency range, like 100MHz to 1GHz, the signal generator is hard to control and the linear properties for the output signal is not good enough to do the electrorotation. So design a signal generator to generate a signal with high frequency range is indispensable, and this is good for researching the biological cells in high frequency environment. The project finished by doing research for some available signal generators, like Phase-Locked Loop (PLL) and Direct Digital Synthesis (DDS), and the final system with high frequency output signal has been designed after the research. The frequency range of the output signal is between 100MHz to 1.35GHz, and the phase shift is 90 degree for the four output signals. The system finally designed is based on analogue circuit, all of the system blocks are designed in Cadence virtuoso software and the CMOS technology is 0.35um. It will affect the big data collection, processing and storing the result of the formation of the entire process.     

A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs

As the cutoff frequency of InP HEMTs enters the terahertz band, high frequency measurement and modeling techniques in hundreds of gigahertz become urgent needs for further millimeter monolithic integrated circuits design. We proposed a new de‐embedding method linking device measurements and modeling based on full EM simulation data acquired from HFSS and advanced design system (ADS). The simulation results for passive dummy structures are well consistent with experiments, and the de‐embedding method is proved very effective for a resistive passive device with high distributed embedding surroundings in frequency range below 40 GHz. Based on these experimental facts, the EM simulations were extended up to 300 GHz and corresponding de‐embedding deviation was further investigated. Results show that the proposed de‐embedding method has very high accuracy in the whole frequency region with a maximum S‐parameters deviation of only 2.58%. However, further analysis proves that the small residual errors still significantly affect extracted small signal model parameters of InP HEMTs especially for transit time τ. Thus, further improvements on de‐embedding accuracy or careful considerations of more error functions in modeling process are necessary for obtaining physically meaningful model parameters.     

Gain and isolation enhancement of patch antenna using L‐slotted mushroom electromagnetic bandgap

In this paper, the application of the L‐slotted mushroom electromagnetic bandgap (LMEBG) structure to patch antenna and antenna array is investigated. A coaxial fed patch antenna and antenna array are designed at 5.8 GHz, center frequency for ISM band (5.725‐5.875 GHz). Two layers of LMEBG are placed around the patch to achieve a gain enhancement of 1.9 dB. Measured results show a bandwidth enhancement of 300 MHz with an additional resonant frequency at 5.6 GHz with 4.5 dB of gain. A 5 × 2 array of LMEBG is used to achieve a 2 dB mutual coupling reduction and 2 dB gain enhancement for a two‐element H‐coupled patch antenna array.     

串联电容式RF MEMS开关设计与制造研究

介绍了一种串联电容式RF MEMS开关的设计与制造。所设计的串联电容式RF MEMS开关利用薄膜淀积中产生的内应力使MEMS桥膜向上发生翘曲,从而提高所设计的开关的隔离度,克服了串联电容式RF MEMS开关通常只有在1GHz以下才能获得较高隔离度的缺点。其工艺与并联电容式RF MEMS开关完全相同,解决了并联电容式RF MEMS开关不能应用于低频段(<10GHz)的问题。其插入损耗为-0.88dB@3GHz,在6GHz以上,插入损耗为-0.5dB;隔离度为-33.5dB@900MHz、-24dB@3GH和-20dB@5GHz,适合于3~5GHz频段的应用。