退火对IBED氧化钒薄膜结构和性能的影响

对离子束增强沉积(IBED)氧化钒薄膜作不同条件的退火，用X射线衍射分析薄膜的晶体结构；用电阻．温度测试分析了薄膜的热电阻温度系数。实验发现，沉积薄膜存在一个形成二氧化钒结构的临界结晶温度，该温度随薄膜制备时离子束增强沉积条件的不同而改变。退火温度低于临界结晶温度时，很难使薄膜结晶成二氧化钒结构；高于临界温度较多的退火或形成VO2结构后再长时间退火，都会使VO2多晶薄膜中的钒分解降价，使薄膜的结构退化、性能变差。IBED多晶VO2薄膜在室温附近的电阻温度系数可达到4％／K以上。     

脉冲激光沉积制备TiN/AlN多层薄膜及其工艺研究

本文采用脉冲激光沉积（PLD）法,在单晶硅试样表面上沉积制备了TiN/AlN多层硬质薄膜;研究了激光能量、靶衬距离和基体温度等工艺参数对薄膜性能的影响。采用X射线衍射（XRD）、扫描电子显微镜（SEM）和显微硬度仪方法研究了薄膜的性能。结果表明：薄膜由TiN和立方AlN细晶和无定型的非晶TiN、AlN组成,薄膜的调制周期尺寸均在λ=（50-200）nm范围内,多层结构界面清晰;当多层薄膜调制周期在100nm以下时,薄膜的显微硬度明显高于TiN和AlN的混合硬度值。     

光伏新材料——掺氮碳薄膜溅射制备技术及测试

介绍了采用氮气离子束溅射 ,高纯石墨为靶材 ,沉积掺氮碳薄膜的设备及工艺技术。对薄膜的沉积过程作了讨论 ,采用 X射线光电子能谱 (XPS)技术等对薄膜结构成分、氮 -碳、碳 -碳原子之间的键以及结合能作了研究 ,在 (1 1 1 )单晶硅片上沉积掺氮碳薄膜 ,构成 C/Si异质结 ,在 1 0 0 m W/cm2 光照下 ,开路电压达 2 0 0 m V。     

离子束增强沉积AlN薄膜的研究

利用离子束增强沉积9IBED）法成功地在Si(100）衬底上合成了大面积均匀的非晶AlN薄膜。XRD和XPS测试结果证实该薄膜为非晶且无单质Al和N2存在,随着Al蒸发速率的提高,N/Al下降,在0.05nm/s及0.10nm/s的蒸发速率下制得的薄膜N／Al分别为0.402:1和0.250:1。SRP测试结果表明,随着Al蒸发速率的提高,表面电阻下降,并助在0.05nm/s的速率下制得的薄均匀致密,表面电阻高于10^8Ω,性能良好,而当蒸发速率≥0.25nm/s时,薄膜绝缘性能迅速下降。AFM分析显示薄膜呈岛状分布,且0.05nm/s制取的样品表面呈鹅卵石密堆积,颗粒均匀,表面比0.10nm/s样品起伏平缓、光滑,薄膜的生长机制可能是三维岛状生长。     

氮气流量对磁控溅射AlN薄膜光学性能的影响

AlN薄膜因其具有优异的物理化学性能而有着广阔的应用前景,采用反应磁控溅射法在低温条件下制备AlN薄膜是近些年科研工作的热点.采用直流磁控溅射法,于室温下通入不同流量的氮气在p型硅(100)和载玻片衬底上沉积了AlN薄膜.利用傅里叶变换红外(FTIR)光谱仪、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和分光光度计等分析薄膜的组分、结构、形貌和光学性能.结果表明随着氮气流量的增加,AIN薄膜质量变好,N2流量为8 cma/min时制备的AlN薄膜为六方纤锌矿结构,在680 cm-1处具有明显的FTIR吸收峰,进一步说明成功制备了AlN薄膜.在300～ 900 nm的波长范围内,薄膜透过率最高可达94％;薄膜带隙随着氮气流量的增加而增大,最大带隙约为4.04 eV.     

氮化时间对脉冲激光沉积AlN薄膜性能的影响

应用脉冲激光沉积(PLD)技术在氮化处理后的蓝宝石衬底上外延生长AlN薄膜。研究了氮化处理时间对AlN薄膜结构性能和表面形貌的影响,利用原位反射式高能电子衍射(RHEED)对生长过程进行实时观测,利用高分辨X射线衍射仪(HRXRD)和扫描电子显微镜(SEM)对AlN薄膜的结构性能以及表面形貌等进行表征和分析。结果表明,随着氮化时间的增加,AlN形核种子数量增加并逐渐有序,促进AlN薄膜由多晶转为单晶并提高其晶体质量,有利于AlN薄膜由三维生长转为二维生长,改善AlN薄膜表面形貌。为采用PLD技术制备高质量AlN基器件提供了一种新思路。     

AlN外延薄膜的生长和特征

文章研究了AlN薄膜的晶体质量、表面形貌、应力等性质与AlN生长工艺的依赖关系。通过对低温成核厚度、成核温度和高温生长AlN所用Ⅴ／Ⅲ比的研究，制备出了具有较好晶体质量的AlN薄膜。高分辨三晶X射线衍射给出AlN薄膜的(002)和(105)的半高宽分别为16．9arcsec和615arcsec，接近国际上报道的较好结果。原子力显微镜对表面形貌的分析表明AlN薄膜的粗糙度为5．7nm。拉曼光谱表明E2(high)模向高能方向移动，说明蓝宝石上外延的AlN薄膜处于压应变状态。光学吸收谱在204nm处具有陡峭的带边吸收，也表明了AlN外延薄膜具有较好地晶体质量。     

氮氩体积流量比对AlN薄膜生长取向、晶体质量及沉积速率的影响及机理分析

采用反应磁控溅射法,在溅射气压、溅射功率和衬底温度恒定的条件下,通过调控氮氩体积流量比,在单晶Si衬底上制备AlN薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)和场发射扫描电子显微镜(FESEM)研究氮氩体积流量比对AlN薄膜的生长取向、晶体质量及沉积速率的影响规律并分析其机理。结果显示,提高氮氩体积流量比有利于AlN薄膜(002)择优取向的生长,但过高的氮氩体积流量比会降低薄膜的沉积速率。在溅射气压为5 mTorr(1 Torr=133.3 Pa)、溅射功率为500 W、衬底温度为200℃、氮氩体积流量(cm³/min)比为14∶6时,在单晶Si衬底上可以制备出质量较好的,具有良好(002)择优取向的AlN薄膜。研究结果可为反应磁控溅射制备高质量AlN薄膜提供工艺参数设置规律指导。     

恒定气压下流量对溅射AlN薄膜结构性能的影响

研究了恒定气压下、通入不同气体流量对射频磁控溅射原位沉积氮化铝(AlN)薄膜应力、结晶质量和表面形貌的影响。利用应力分析仪、X线衍射(XRD)、原子力显微镜(AFM)和台阶仪对AlN薄膜的结构特性进行了分析。结果表明,恒定气压下改变通入气体流量对薄膜应力、结晶质量、表面形貌及粗糙度和薄膜沉积速率均有影响。当通入气体流量为10cm3/min时,AlN薄膜呈明显的压应力,结晶质量较差。增加通入气体流量降低了薄膜沉积速率和增加了表面粗糙度,但有利于减小薄膜的压应力和提高薄膜的结晶质量。本实验条件下得出的溅射AlN薄膜的最佳流量条件为50cm3/min。     

溅射功率对AlN/ZnO薄膜结构形貌的影响

采用直流反应磁控溅射法以ZnO为缓冲层在Si衬底上制备了AlN/ZnO薄膜。利用台阶仪、X线衍射(XRD)仪和原子力显微镜(AFM)对不同溅射功率下制备的AlN/ZnO薄膜的厚度、结构及表面形貌进行测试表征。结果表明,不同溅射功率下生长的AlN薄膜都沿(002)择优生长,且随着功率的增大,薄膜的沉积速率增加,晶粒长大,AlN薄膜的(002)取向性变好。同时还利用扫描电子显微镜(SEM)对在优化工艺下制得AlN/ZnO薄膜断面的形貌进行表征,结果显示AlN薄膜呈柱状生长。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first