碳热还原法合成AIN晶须及其生长机理

以Al2O3和石墨为原料，采用碳热还原法制备AIN晶须.研究了矿化剂的种类及温度等工艺对AIN晶须合成的影响结果表明，以CaF2和B2O3为矿化剂的AIN品须是以VLS机制生长的，高温下VLS机制可以转变为VS机制，同时存在两维成核及螺位错生长过程，晶须生长方向大多呈{101n}，（n=0，1，2，3）及{121m}，（m=0，1；2）的晶面生长     

升华再结晶法制备AIN晶须及其生长特性

以ＡｌＮ粉体为原料，加入适量的ＣａＯ－Ｂ２Ｏ３矿化剂，采用升华再结晶法制备ＡｌＮ晶须，初步探讨了反应器及其合成温度对产物的种类的影响，研究了晶须的结构特征及其生长机理，结果表明，初期的合成产物包括ＡＬＮ晶柱、晶须和非晶ＡｌＮ纤维，以ＶＬＳ机制生长；后期产物为ＡｌＮ晶须，表现为ＶＳ生长机制：ＸＲＤ及ＴＥＭ分析表明，晶须大多呈现沿（２１１０）、（１０１ｌ）和（０００１），ｌ＝０、１、２、３的晶面生长，     

TiO2和O-Al2O3晶体的生长习性

通过水热法制备粉体的实验观察到金红石、锐钛矿和α-Al2O3晶体的生长习性．采用配位多面体生长习性法则合理地解释了Ti O2和α-Al2O3的生长习性．其主要结果为α-Al2O3晶体的生长习性为平板{0001}，其各晶面的生长速度为：V｛0001 }＜V｛1123}；锐钛矿的生长习性为四面体，其各晶面的生长速度为V<010>=V<001>>V<010>>V<111>．而PBC理论很难合理地解释α-Al2 O3晶体的生长习性．     

TiO2和α-Al2O3晶体的生长习性

通过水热法制备粉体的实验观察到金红石、锐钛矿和α－Ａｌ２Ｏ３晶体的生长习性,采用配位多面体生长习性法则合理地解释了ＴｉＯ２和α－Ａｌ２Ｏ３的生长习性,其主要结果为α－Ａｌ２Ｏ３晶体的生长飞快生为平板｛０００１｝,其各晶面的生长速度为：Ｖ｛０００１｝〈Ｖ｛１１２３｝〈Ｖ｛０１１２｝＝Ｖ｛１１２０｝〈Ｖ｛０１１０｝;金红石的生长习性为柱状,其各晶面的生长速度为;Ｖ〈１１０〉〈Ｖ〈１００〉〈Ｖ〈１０１〉     

高纯AlN晶须的制备

以A1,A1N粉为原料,采用合适的矿化剂,通过控制反应器内的温度和气相过饱和度,可以获得不同尺度的A1N晶须或枝晶,合成出的A1N晶须纯度高,晶体结构完整,晶须直径可控（1－20μm),长度为cm级,高温合成的A1N枝晶,直径为1mm,长度约0.5cm,为六棱椎形针状晶体,在｛21^-1^-1｝,｛101^-1｝面存在明显的择优取向,生长机理为气－固（VS）机理。     

纳米 KTi6O13w合成中的形态演化和生长机理

以纳米TiO2为原料，通过煅烧反应制备了纳米K2Ti6O13晶须，对晶须合成中温度和时间诱导的相变、形态演化和生长机理等进行了原位研究．结果表明;纳米TiO2作原料可显著降低晶须合成温度，适宜的煅烧温度为900-1100℃．形态演化观察和高温XRD分析表明；K2Ti6O13晶须的相变及生长对温度极为敏感，形态演化是基于初期爆发式的相变和随后串并联式的长大．K2Ti6O13晶须的生长遵守本研究提出的串并联机制，晶须轴向的生长台阶是串并联生长的直接结果．     

316不锈钢应力腐蚀断裂扫描电镜研究

应用扫描电镜和Ｘ射线能量色散谱仪对３１６不锈钢应力腐蚀断口形貌、腐蚀产物及裂纹扩展的晶体学特征进行研究。结果表明,断裂为穿晶断裂,断口形貌为台阶条纹和河流花样,并有腐蚀产物和腐蚀坑等。通过对腐蚀坑形貌的研究,提出了腐蚀坑形态与晶面之间的关系,证明了３１６不锈钢在氯离子环境下的应力腐蚀开裂主要沿｛１００｝、｛１１１｝、｛１１０｝晶面扩展的机制。     

铝粉在高压氮气中自蔓延燃烧合成氮化铝

利用铝粉在高压氮气中的自蔓延燃烧合成（SHS）方法,制备了氮含量较高（33．5wt％）的AIN,研究了稀释剂含量、添加剂含量、氮气压力、反应物的相对密度、反应物厚度对燃烧产物氮含量的影响,并对后燃烧现象进行了分析,产物中发现氮化铝晶须和棒晶．     

Ti-40Al-2B合金微观组织和初生TiB2生长特征

用原位自生法制备了Ti-40Al-2B(wt%)复合材料,并用XRD、SEM对复合材料的相组成和微观组织,特别是TiB₂的形貌进行了研究。结果表明:该合金由TiAl和TiB₂两相组成。其中TiB₂颗粒以初生的块状和共晶的片状或细棒状形式共存。初生TiB₂呈六面棱柱体,端面有清晰的生长台阶,其显露晶面分别为(0001)和｛101 - 0｝。结合晶体生长理论分析认为:TiB₂的生长单元为一个硼原子和六个钛原子组成的三棱柱,硼原子位于三棱柱的中心,生长方式以台阶式生长为主。其中｛112 - 1｝面生长速率最快,｛101 - 0｝面生长速率最慢,导致TiB₂形成以｛101 - 0｝面为棱柱面的六面棱柱结构。      

反应合成六钛酸钾晶须的微结构及其晶体学生长研究

通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等测试方法分析反应合成的六钛酸钾(K2Ti6O13)晶须的形态、晶体结构及其结晶生长。结果表明,采用烧结法一次反应合成的K2Ti6O13晶须为柱状单晶,在确定的工艺条件下获得的晶须表面质量很好,内部原子排列规则,没有晶体缺陷存在,外侧面和断面有一层紊乱的过渡层,晶须沿轴向和径向生长,且沿轴向生长快,其轴向生长方向平行于[010]方向。     

Growth of aluminium nitride whiskers by sublimation-recrystallization method

Aluminium nitride (AlN) with various morphologies was fabricated through a sublimation-recrystallization method. The influences of type of reactor and temperature gradient were explored, as well as the orientations and growth mechanism of the obtained AlN whiskers. In the early stage of preparation, a vapour-liquid-solid (VLS) mechanism dominated, producing AlN pillars, whiskers and noncrystalline fibres. In the later stage, as the catalyst liquid was removed by volatilization, the pillars and noncrystalline fibres stopped growing, but the growth of AlN whiskers continued through a vapour-solid (VS) mechanism. By Laue method and rotating-crystal method of x-ray diffraction, together with electron diffraction, most of the AlN whiskers were discovered to grow on planes , or , where l=0, 1, 2, 3, along crystal axes , or , where w=0, 1, 2, 3. Oblique grown whiskers also appeared, with a growth direction at an angle of about 54° to the growth plane, .     

Morphology, Growth Process and Symmetry of {0001} Face on Yb：YAl3（BO3）4 Crystal

The {0001} face develops on the habit of self-frequency doubling laser crystal Yb: YAl3(BO3)4 (YbYAB) only under high growth rate condition, and its morphology is rough. To study the growth mechanism of {0001} face, we have observed the growth morphology on {0001} polishing section by atomic force microscopy (AFM). A series of AFM images captured in different growth durations on the {0001} polishing section reflect the crystal growth process. It is shown that the growth morphology on the {0001} polishing section was rough with many hillocks at the first growth stage, and it can become smooth finally, although the growth morphology on the {0001} face develoFed naturally on YbYAB crystal habit is always rough. On the smooth {0001} surface formed at the last growth stage, there aresome triangular pits. This fact is different from that of hillocks in most crystal growth morphologies. AFM can easilydistinguish the pits or hillocks on the surface, but differential interfere contrast microscopy (DIC) can not do. Theorientation of the triangular pits is just the opposite to the triangular {0001} faces. The chemical etching patternis also composed of this kind of triangular pits. These growth morphology and etching pattern of the {0001} facesshow 3m symmetry, but the point group of YbYAB crystal is 32. The symmetric contradiction between morphologyand point group does not exist for quartz, although whichsurface morphology we can distinguish the right form ormorphology we can not do. The reason for the symmetricand its point group is not known yet.has the same point group as YbYAB. From quartz {0001}left form of the crystal, but from YbYAB {0001} surfacecontradiction between YbYAB {0001} surface morphology and its point group is not known yet.     

碳热还原法合成AlN晶须及其生长机理

以Ａｌ２Ｏ３和石墨为原料，采用碳热还原法制备ＡｌＮ晶须，研究了矿化主 种类及温度等工艺对ＡｌＮ晶须合成的影响。结果表明，以ＣａＦ２和Ｂ２Ｏ３为矿化剂的ＡｌＮ晶须是以ＶＬＳ机制生长的，     

Effect of boundary plane on the atomic structure of [0001] Σ 7 tilt grain boundaries in ZnO

The atomic structure of [0001] Σ 7 tilt grain boundaries with { }‖ { }, { }‖ { }, and { }‖ { } boundary planes in ZnO was investigated through high-resolution transmission electron microscopy observation of fiber-textured thin films and atomistic calculations. These boundaries were found to comprise three kinds of common structural units that are characterized by fourfold- to eightfold-coordinated channels along the [0001] direction in contrast to sixfold-coordinated channels in wurtzite structure. The boundary structural units are very similar to the multiple core structures of edge dislocations with Burgers vectors of 1/3 < > . Transformation between two of the three configurations can easily occur through an atom flipping corresponding to dislocation glide. Depending on the orientation of boundary planes with respect to the Burgers vectors, the dislocation-like units exhibit straight or zigzag arrangements with periodicities corresponding to the Σ 7 misorientation.     

KDP crystal doped with L-arginine amino acid: growth,structure perfection,optical and strength characteristics

Potassium Dihydrogen Phosphate (KDP) crystal doped with L-arginine (L-arg) amino acid with 1.4 wt% concentration in the solution was grown onto a point seed by the method of temperature reduction. For the first time an attempt was made to grow large-size (7 × 6 × 8 cm³) optically transparent crystals, which allowed to analyze the effect of L-arg additive on the physical properties of the different growth sectors ({100} and {101}) of KDP. The incorporation of L-arg into both growth sectors of the crystal was confirmed by the methods of optical and IR spectroscopy and found to be caused by the ability of the amino acid to form hydrogen bonds with the face {100} and electrostatically interact with the positively charged face {101} of KDP crystal. A slight variation in the unit cell parameters was reported, the elementary cell volume of KDP:L-arg crystal increased in comparison with the one of pure KDP by 2·10⁻² and 2.07·10⁻² Å³ in the sectors {100} and {101}, respectively. It was found that the doping of L-arg enhanced the SHG efficiency of KDP and depended on the crystal growth sectors. The SHG efficiency of KDP:L-arg was by a factor 2.53 and 3.95 higher in comparison with those of pure KDP for {101} and {100} growth sector, respectively. The doping was found to lead to softening of both faces by ∼3–10% and ∼14–17% in the sectors {101} and {100}, respectively. Investigation of the influence of L-arg molecules on the bulk laser damage threshold of the crystals showed that the bulk laser damage threshold of the samples of KDP:L-arg crystal was higher than the one of the pure crystal in the sector {101} and lower in the sector {100}. The correlation between microhardness and laser damage threshold were discussed. The study is helpful for further searching, designing and simulation of hybrid NLO materials.     

AlN晶须的形貌及取向

利用VLS法制备了AlN晶须,观察了诸如生长“小山”、堆垛等各种晶须形态．对AlN晶须的取向进行了研究,发现了一些不同于密排面的生长面,诸如{101n}（n＝1,2,3）．对AlN晶须的生长机制进行了初步探索,验证了螺旋位猪生长机制,并提出了斜生长机制,从而解释了VLS法制备的AlN晶须无[0001]取向的问题     

硫化物晶体的生长习性

在自然界中硫化物晶体的种类较多,其结构较复杂,其中硫离子以S^2-和对硫S^2-₂形式存在．一部分晶体的生长习性得不到满意的解释．本文采用配位多面体生长习性法则合理地解释了MoS₂、ZnS、CuFeS₂和PbS晶体的生长习性．发现MOS₂晶体的生长习性为六方平板状｛0001｝,其各晶面的生长速度为：V_＜0001＞＜V_＜1010＞;CuFeS₂和ZnS晶体的生长习性为四面体,其各晶面的生长速度为：V_＜111＞＞V_＜001＞＞V_＜111＞;PbS晶体的生长习性为八面体｛111｝,立方体只是它的一种习性变化.