Mn在SrTiO3功能陶瓷中的作用

从实验结果出发，通过微观分析研究了Ｍｎ在ＳｒＴｉＯ３双功能陶瓷中的作用以及它对电性能的影响。热重分析和Ｘ光衍射的结果说明了ＭｎＯ２在加热过程中物相和Ｍｎ离子价态的变化，得出Ｍｎ＾２＋，Ｍｎ＾３＋，Ｍｎ４＋共存的结论。     

ZnO导电陶瓷的制备及其性能表征

本文利用化学共沉淀法分别制得Ｚｎ５（ＣＯ３）２（ＯＨ）６掺杂Ａｌ（ＯＨ）３、Ｍｇ（ＯＨ）２以及Ｚｎ５（ＣＯ３）２（ＯＨ）６掺杂Ｓｂ（ＯＨ）３、Ｂｉ（ＯＨ）３、Ｓｎ（ＯＨ）４、Ｃｏ（ＯＨ）３、ＭｎＯ（ＯＨ）２两种复合粉体,利用高频等离子体焙解新工艺,制得了纳米ＺｎＯ及相应的添加剂陶瓷复合粉体．ＴＥＭ分析结果表明：两种陶瓷复合粉体的粒径均小于１００ｎｍ．利用前者,通过添加适当的Ａｌ２Ｏ３和ＭｇＯ,制备出了电阻率约１０～２０００Ω·ｃｍ,Ｖ－Ｉ特性较好的ＺｎＯ线性陶瓷电阻．利用后者,通过适当的杂质配比,在１００     

红宝石激光晶体零场分裂及其光谱精细结构研究

推导了ｄ＾３（Ｃ＾＊３ｖ）组态离子的中间场能量矩阵，建立了红宝石（Ｃｒ＾３＋：Ａｌ２Ｏ３）晶体基态＾４Ａ２零场分裂（ＺＦＳ）参量Ｄ及＾２Ｅ态分裂△Ｅ（＾２Ｅ）与晶体结构之间的定量关系；假设晶格畸变的基础上，统一地计算了Ｃｒ＾３＋：Ａｌ２Ｏ３晶体的ＺＦＳ参量Ｄ、Ｚｅｅｍａｎｇ因子、精细光谱及＾２Ｅ态的分裂△Ｅ（＾２Ｅ），计算结果与实验观测十分吻合，定量的研究结果表明：当Ｃｒ＾３＋离子掺入Ａｌ２Ｏ３晶     

溅射法制备硫化锌薄膜的XPS剖析

用Ｘ射线光电子能谱（ＸＰＳ）技术，测量了射频磁控溅射法（ＲＦＭＳ）制备的硫化锌薄膜（ＺｎＳ：Ｅｒ＾３＋）的表面及内部构态，认为氧吸附形成的表面构态是产生薄膜界面态和界面陷阱能级的主要原因，对研究器件的激发过程有参考意义     

Mn对一次烧成钛酸锶陶瓷复合功能的影响

采用一次烧成工艺制备了Ｍｎ掺杂的ＳｒＴｉＯ３电容－压敏复合功能陶瓷,采用ＳＥＭ观察了ＳｒＴｉＯ３复合功能陶瓷的微观结构,测量了不同氧化热处理温度下ＳｒＴｉＯ３陶瓷的电学特性,采用ＸＰＳ研究了ＳｒＴｉＯ３复合功能陶瓷中Ｍｎ主要以Ｍｎ＾２＋的化学状态,并分析了Ｍｎ的掺杂行为。研究结果表明：一次烧成ＳｒＴｉＯ３陶瓷达到较高的烧成致密度,Ｍｎ主要以Ｍｎ＾２＋的形式存在于晶界,氧化热处理过程Ｍｎ低价粒表面的     

稀磁半导体Zn_（1－x）Mn_xSe外延薄膜与超晶格的光学特性研究

用分子束外延生长了不同组分ｘ的Ｚｎ１－ｘＭｎｘＳｅ外延膜和Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ超晶格．由于Ｚｎ１－ｘＭｎｘＳｅ的能隙Ｅｇ随组分变化在低组分区形成弓形，且弓形的范围随温度变化的反常特性，首次在光致发光谱（ＰＬ）中观测到当温度升高时，Ｚｎ１－ｘＭｎｘＳｅ／Ｚｎｓｅ超晶格中由ＺｎＳｅ为阱、Ｚｎ１－ｘＳｅ为垒转换成Ｚｎ１－ｘＳｅ为阱，ＺｎＳｅ为垒．瞬态光致发光结果表明，Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ超晶格中Ｍｎ＋＋离子的激发态弛豫时间远大于Ｚｎ１＝ｘＭｎｘＳｅ外延模中Ｍｎ＋＋离子的弛豫时间，这可能是由于     

ZnSe的MOVPE生长相图：以DMZn和H_2Se为源

本文基于热力学平衡计算，首次给出以ＤＭＺｎ和Ｈ２Ｓｅ为源，ＭＯＶＰＥ生长ＺｎＳｅ的相图．文中讨论了ＺｎＳｅ单一凝聚相区的范围，以及可能出现ＺｎＳｅ（ｓ）＋Ｚｎ（ｓ）或ＺｎＳｅ（ｓ）＋Ｓｅ（ｌ）两种双凝聚相区的条件．     

GaN的离子注入掺杂和隔离

在ＧａＮ中注入Ｓｉ＾－和Ｍｇ＾＋／Ｐ＾＋之后，在约１１００℃下退火，分别形成ｎ区和ｐ区。每种元素的注入剂量为５×１０＾１４ｃｍ＾－２时，Ｓｉ的截流子激活率为９３％，Ｍｇ的是６２％。相反，在原ｎ型或ｐ型ＧａＮ中注入Ｎ＾＋，然后在约７５０℃下退火，能形成高阻区（＞５×１０＾９Ω／□）。控制这些注入隔离材料电阻率的深能态激活能在０．８－０．９ｅＶ范围内，这些工艺参数适用于各种不同的ＧａＮ基电子和光器件。     

担载Na,W,Mn的（001）SiO2单晶模型催化剂的SEM研究

用浸渍法制备了担载多组分Ｎａ、Ｗ、Ｍｎ的（００１）ＳｉＯ２单晶模型催化剂,并进行了ＸＰＳ和ＳＥＭ表征。研究结果表明,Ｎａ、Ｗ、Ｍｎ的多元组合使ＳｉＯ２转变为ｓｉＯ３＾２－能力的大小顺序依次为Ｗ－Ｍｎ〉Ｎａ－Ｗ－Ｍｎ〉Ｎａ－Ｍｎ〉Ｎａ－Ｗ,它们在ＳｉＯ２表面的形态各不相同,并且在ＳｉＯ２基体中的扩散程度比单组分强,表明它们之间可能在存着某种相互促进向ＳｉＯ基体中扩散的协同效应。     

光助MOCVD生长p—ZnSe及ZnSep—n结室温蓝色电致发光

用光助低压ＭＯＣＶＤ进行ＺｎＳｅ及ＺｎＳｅ：Ｎ外延层生长，由发光光谱表明，在光助下生长的本征ＺｎＳｅ外延膜具有高质量：ＺｎＳｅ：Ｎ外延层中与Ｎ有关的深中心发射得到有效抑止，其ｐ－ＺｎＳｅ受主载流子深度达３×１０＾１７ｃｍ＾－３。在制备ｎ－ＺｎＳｅ／ＺｎＣｄＳｅ－ＺｎＳｅＱＷ／ｐ－ＺｎＳｅ结构中，在室温下观测到该二极管电脉冲下的蓝色电致发光（ＥＬ）。     

Absence of photocatalytic activity in the presence of the photoluminescence property of Mn–ZnS nanoparticles prepared by a facile wet chemical method at room temperature

Mn-doped ZnS nanoparticles (NPs) were prepared with dopants at various concentrations using a facile, simple and inexpensive wet chemical method at room temperature. The physicochemical properties of NPs were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), ultraviolet-visible absorption spectroscopy (UV–vis) and photoluminescence (PL). XRD analysis confirmed formation of ZnS with zinc blende structure and average crystallite size of about 2 nm. TEM analysis revealed formation of hyperfine NPs with rather good uniformity. The room temperature photoluminescence (PL) spectrum of ZnS:Mn²⁺ exhibited an orange-red emission around 600 nm. The maximum PL intensity was observed for 7.5% Mn doped ZnS. The photocatalytic performance of ZnS:Mn²⁺ was successfully demonstrated for degradation of three different model dyes (i.e. Rhodimine B (Rh. B), Bromocresol Green (BCG) and Bromochlorophenol Blue (BCB)). The results revealed that not only was there a remarkable difference in photocatalytic performance of Mn doped ZnS for all three different dyes at different dopant concentrations but also photocatalytic activity was decreased by Mn doping.     

不同尺寸ZnS：Mn纳米粒子的静压光致发光研究

测量了ZnS:Mn纳米粒子以及相应体材料在不同压力下的光致发光谱.随压力增大,来源于Mn2+离子的4T1 6A1 跃迁的桔黄色发光明显红移.体材料和 10, 4. 5, 3. 5, 3nm的ZnS:Mn纳米粒子中Mn2+发光的压力系数分别是-29. 4±0. 3和-30. 1±0. 3, -33. 3±0. 6, -34. 6±0. 8, -39±1meV/GPa,压力系数的绝对值随粒子尺寸减小而增大,该种尺寸关系由晶体场场强Dq和Racah参数B值的尺寸依赖性引起. 1nm样品的Mn2+发光的特殊压力行为是因为样品的粒子尺寸比较小,另外,分布在Y型沸石中的纳米粒子的表面状况也不同于其它样品.     

核/壳结构ZnS:Mn/ZnS量子点光发射增强研究

利用水溶性前驱体材料在水性介质中制备了ZnS:Mn和ZnS:Mn/ZnS核/壳结构量子点(QDs,quantum dots),并用X射线衍射(XRD)、光致发光(PL)对ZnS:Mn和ZnS:Mn/ZnS核/壳结构QDs的结构和发光性能进行研究.ZnS:Mn和ZnS:Mn/ZnS QDs XRD谱与标准谱吻合,根据De...     

半导体低维结构的压力光谱研究

研究了一些半导体低维结构的压力光谱．测得平均直径为26、52和62nm的In0.55Al0.45As／Al0.5Ga0.5As量子点发光峰的压力系数分别为82、94和98meV／GPa．表明这些发光峰具有Г谷的特性,这些量子点为Ⅰ型量子点．而平均直径为7nm的量子点发光峰的压力系数为-17meV／GPa,具有X谷的特性．所以这种小量子点为Ⅱ型量子点．测得ZnS：Mn纳米粒子中Mn发光峰的压力系数为-34．6meV／GPa,与晶体场理论的预计一致．而DA对发光峰基本不随压力变化,表明它应该与ZnS基体中的表面缺陷有关．测得ZnS：Cu纳米粒子中Cu的发光峰的压力系数为63．2meV／GPa,与ZnS体材料的带隙压力系数相同．表明Cu引入的受主能级具有浅受主的某些特点．测得ZnS：Eu纳米粒子中Eu发光峰的压力系数为24．1meV／GPa,与晶体场理论的预计不同．可能和Eu的激发态与ZnS导带间的相互作用有关．     

The structure and room temperature ferromagnetism property of the ZnS:Cu2+ nanoparticles

ZnS:Cu²⁺ nanoparticles were synthesized by the solvothermal method. The results showed that the nanoparticles with the diameters of 10–20 nm were of cubic zinc blende structure. The Cu²⁺ ions were substitutionally incorporated into the ZnS lattice and the maximum concentration of the Cu²⁺ ions in the ZnS nanoparticles can reach to 2.84%. The ferromagnetism property of the ZnS:Cu²⁺ nanoparticles was observed around room temperature, which was explained by the super-exchange mechanism.     

Efficient and Photostable ZnS‐Passivated CdS:Mn Luminescent Nanocrystals

Efficient and photostable ZnS‐passivated CdS:Mn (CdS:Mn/ZnS core/shell) nanocrystals were synthesized using reverse micelle chemistry. CdS:Mn/ZnS core/shell nanocrystals exhibited much improved luminescent properties (quantum yield and photostability) over organically (n‐dodecanethiol‐) capped CdS:Mn nanocrystals. This is the result of effective, robust passivation of CdS surface states by the ZnS shell and consequent suppression of non‐radiative recombination transitions. The dependence of photoluminescence (PL) intensity has been observed as a function of UV irradiation time for both organically and inorganically capped CdS:Mn nanocrystals. Whereas organically capped CdS:Mn nanocrystals exhibit a significant reduction of PL intensity, CdS:Mn/ZnS core/shell nanocrystals exhibit an increased PL intensity with UV irradiation. XPS (X‐ray photoelectron spectroscopy) studies reveal that UV irradiation of CdS:Mn/ZnS nanocrystals in air atmosphere induces the photo‐oxidation of the ZnS shell surface, leading to the formation of ZnSO₄. This photo‐oxidation product is presumably responsible for the enhanced PL emission, serving as a passivating layer.     

Strong blue luminescence of O2−-doped ZnS nanoparticles synthesized by a low temperature solid state reaction method

O^2?-doped ZnS(ZnS:O) nanoparticles with strong blue emission were successfully synthesized using a facile low temperature solid state reaction method. X-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy were used to characterize their crystal structures, sizes, morphologies, and photoluminescence. The ZnS:O nanoparticles were quasi-spherical particles with a cubic zincblende crystal structure, and their average crystallite diameter was about 8.35–13.50 nm. Dependence of the photoluminescence properties of the ZnS:O nanoparticles on the Zn/O ratio in the source materials was studied, and an optimal O^2? doping condition was found to be Zn/O=10:5.3. The ZnS:O (Zn/O=10:5.3) nanoparticles exhibited strong blue emission with an intensity 9 times higher than the undoped nanoparticles.     

Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing

Luminescence, electron spin resonance, and X-ray diffraction (XRD) methods were used to investigate the features of ZnS-powder doped by Mn impurity during self-propagating high-temperature synthesis and subsequent annealing. The obtained powder consists of ZnS microcrystals with mainly hexagonal phase (80 ± 5)%. It was found, that after synthesis Mn presents not only in the form of non-uniformly distributed microscopic impurities in ZnS, but also in the form of Mn metal nanocrystals. Thermal annealing at 800°C leads to the additional doping of ZnS from metallic Mn, to the redistribution of the embedded Mn in the volume of microcrystals, and to the ZnS oxidation. At the same time, the ratio between the cubic and hexagonal phases does not change. It was shown that annealing causes a decrease in the concentration of the defects responsible for the luminescence-excitation bands, which correspond to transitions from the ground to the excited states of the Mn²⁺ ion. As a result of annealing, there is also a change in XRD coherent domain size. Simultaneously, the intensity of peaks in the luminescence-excitation spectrum with wavelengths of 375 and 395 nm was changed. The causes of these changes and the nature of the corresponding bands are discussed.     

二氧化硅壳层对CdS:Mn/ZnS量子点的光稳定性影响研究

在量子点表面包覆二氧化硅壳层,能够有效的保护纳米粒子核不受外界环境的影响,使得它在光电子器件和生物标记等领域中有着广泛的应用前景。通过一锅法制备高质量CdS:Mn/ZnS量子点,然后利用反相微乳液方法在量子点的表面继续包覆SiO2层,得到CdS:Mn/ZnS@SiO2多层核壳结构量子点材料。化学性质稳定的ZnS及SiO2材料的包覆使CdS量子点材料的毒副作用降低并有效提高其稳定性,然而CdS:Mn/ZnS量子点的大部分性能在包覆SiO2后都保持不变,因此CdS:Mn/ZnS@SiO2量子点在光学应用中有很大的应用潜力。     

Magnetic and Structural Investigation of ZnSe Semiconductor Nanoparticles Doped With Isolated and Core‐Concentrated Mn2+ Ions

X‐Ray magnetic circular dichroism (XMCD) experiments on diluted magnetic semiconductor nanocrystals (2–7 nm) are reported in order to study their local electronic structure and magnetic properties. ZnSe nanoparticles containing either single manganese ions (Mn²⁺) distributed in the lattice of the entire particle or a MnSe core in the center are prepared using high temperature approaches. The Mn²⁺ concentration is varied between less than one to several tens of manganese ions per nanocrystal. For all samples it is shown that the Mn²⁺ is exclusively present in the bulk of ZnSe nanoparticles with no evidence for oxidation to higher Mn‐oxidation states. The magnetic ions are highly polarized inside the nanocrystals reaching about 80% of the theoretical value of a pure d⁵ state under identical conditions for the case of isolated manganese ions. Nanocrystals with a MnSe core ZnSe shell structure reach <50% of this value. Thus, their polarization is significantly more hindered, which is due to the significantly enhanced Mn–Mn interactions and a more distorted crystalline lattice. In contrast, no coupling between the manganese centers is observed in the nanoparticles doped samples with low concentrations of Mn²⁺, indicating that these ions are isolated in the bulk of the nanoparticles.